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Patent Agency Ranking
11.发明申请公开(公告)号：US20190333964A1
公开(公告)日：2019-10-31
申请号：US16503956
申请日：2019-07-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Sub LEE , Han Kyu SEONG , Yong Il KIM , Jung Sub KIM , Seul Gee LEE
Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.
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公开(公告)号：US20190181316A1
公开(公告)日：2019-06-13
申请号：US16020071
申请日：2018-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hye Seok NOH , Young Jin CHOI , Yong Il KIM , Han Kyu SEONG , Dong Gun LEE , Jin Sub LEE
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/156 , H01L33/0095 , H01L33/26 , H01L33/40 , H01L33/504 , H01L33/507 , H01L33/56 , H01L2933/005 , H04N5/2256
Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.
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公开(公告)号：US20170125631A1
公开(公告)日：2017-05-04
申请号：US15235464
申请日：2016-08-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub LEE , Jung Sub KIM , Han Kyu SEONG , Soon Jo KWON , Ji Hye YEON , Dong Gun LEE
Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer, and including: a plurality of quantum barrier layers; and a plurality of quantum well layers containing indium (In), the plurality of quantum barrier layers and the plurality of quantum well layers being alternately stacked on each other, the plurality of quantum well layers comprising a first quantum well layer and a second quantum well layer; and a second conductivity-type semiconductor layer disposed on the active layer, wherein the first quantum well layer is disposed closer to the first conductivity-type semiconductor layer than the second quantum well layer, wherein the second quantum well layer is disposed closer to the second conductivity-type semiconductor layer than the first quantum well layer, wherein a thickness of the second quantum well layer is greater than a thickness of the first quantum well layer, and wherein each of the first and the second quantum well layers comprises at least one graded layer having a varying amount of In composition, and the at least one graded layer of the second quantum well layer has a greater thickness than the at least one graded layer of the first quantum well layer.
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公开(公告)号：US20170054055A1
公开(公告)日：2017-02-23
申请号：US15147039
申请日：2016-05-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jung Sub KIM , Dong Hyun LEE , Jin Sub LEE , Kyung Wook HWANG , In Su SHIN , Eui Joon YOON , Gun Do LEE , Jeong Hwan JANG
Abstract: A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0≦x+y≦1, 0≦y
Abstract translation: 一种半导体紫外线发射装置，包括：基板; 缓冲层，其设置在所述基板上并且包括多个纳米棒，在所述多个纳米棒之间形成有多个空隙; 第一导电氮化物层，设置在所述缓冲层上并具有第一导电AlGaN层; 设置在第一导电氮化物层上并具有包括Al x In y Ga 1-x-y N（0≤x+y≤1,0≤y<0.15）的量子阱的有源层）。 以及设置在所述有源层上并具有第二导电AlGaN层的第二导电氮化物层，其中所述多个纳米棒满足3.5≤n（λ）×D /λ≤5.0，其中λ表示由所述活性物质产生的光的波长 层，n（λ）表示波长为λ的多个纳米棒的折射率，D表示多个纳米棒的直径。
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15.发明申请公开(公告)号：US20160099376A1
公开(公告)日：2016-04-07
申请号：US14867659
申请日：2015-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae Hyeok HEO , Jin Sub LEE , Young Jin CHOI , Hyun Seong KUM , Ji Hye YEON , Dae Myung CHUN , Jung Sub KIM , Han Kyu SEONG
CPC classification number: H01L33/005 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/24
Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.
Abstract translation: 根据一个示例性实施例，一种制造纳米结构半导体发光器件的方法包括：将第一导电型氮化物半导体材料的纳米孔彼此间隔开，并形成包含活性层的多层壳， 在每个纳米孔的表面上的第二导电型氮化物半导体层。 通过控制源气体通量，源气体流量，室压力，生长温度和生长速率的至少一个工艺参数来形成多层壳体的至少一部分，从而具有更高的膜厚度 均匀性
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