中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

18 records (took 0.017 seconds)

    Flash memory, flash memory system and operating method of the same
    11.
    发明授权
    Flash memory, flash memory system and operating method of the same 有权

    公开(公告)号：US09812213B2

    公开(公告)日：2017-11-07

    申请号：US15098791

    申请日：2016-04-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung-Ryun Kim ,  Sang-Yong Yoon

    IPC: G11C16/28 ,  G11C11/56 ,  G11C16/04

    CPC classification number: G11C16/28 ,  G11C11/5642 ,  G11C16/0483

    Abstract: A flash memory, a flash memory system, and an operating method thereof. The method of operating a flash memory includes counting the number of memory cells having threshold voltages included in a first adjacent threshold voltage range (defined by a first reference read voltage for distinguishing between initially separated adjacently located threshold voltage distributions and a first search read voltage having a first voltage difference from the first reference read voltage), and a second adjacent threshold voltage range (defined by the first reference read voltage and a second search read voltage having a second voltage difference from the first reference read voltage), and setting a first optimal read voltage based on the difference between the first and second counted numbers of the memory cells.

    Memory device and read method of memory device
    13.
    发明授权
    Memory device and read method of memory device 有权
    存储器件的存储器件和读取方法

    公开(公告)号：US09478299B2

    公开(公告)日：2016-10-25

    申请号：US14629616

    申请日：2015-02-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung-Ryun Kim

    IPC: G11C16/26 ,  G11C16/14 ,  G11C8/08 ,  G11C8/14 ,  G11C16/04 ,  G11C16/08

    CPC classification number: G11C16/26 ,  G11C8/08 ,  G11C8/14 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/14

    Abstract: In a method of reading a memory device, difference information is generated based on a distance difference between a position of a read word-line and a position of a boundary word-line. The read word-line corresponds to a read address. The boundary word-line corresponds to a last programmed word-line in a memory block included in a memory cell array. A read word-line voltage and an adjacent word-line voltage are determined based on the difference information. The read word-line voltage is applied to the read word-line. The adjacent word-line voltage is applied to an adjacent word-line that is adjacent to the read word-line. A read data corresponding to the read address is outputted based on the read word-line voltage and the adjacent word-line voltage. The read method of the memory device according to example embodiments may be capable of increasing the performance by controlling the voltages applied to the adjacent word-line and the read word-line according to the difference information determined based on the read word-line and the boundary word-line.

    Abstract translation: 在读取存储器件的方法中，基于读取字线的位置与边界字线的位置之间的距离差产生差异信息。 读字线对应于读地址。 边界字线对应于包含在存储单元阵列中的存储器块中的最后编程的字线。 基于差异信息确定读取字线电压和相邻字线电压。 读取的字线电压被施加到读取字线。 相邻的字线电压被施加到与读取字线相邻的相邻字线。 基于所读取的字线电压和相邻的字线电压输出与读取地址对应的读取数据。 根据示例实施例的存储器件的读取方法可以通过根据读取的字线和所读取的字线确定的差分信息来控制施加到相邻字线和读取字线的电压来提高性能， 边界字线。

    Method of writing data in non-volatile memory device
    14.
    发明授权
    Method of writing data in non-volatile memory device 有权
    在非易失性存储器件中写入数据的方法

    公开(公告)号：US09183944B2

    公开(公告)日：2015-11-10

    申请号：US14272906

    申请日：2014-05-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Si-Hwan Kim ,  Sang-Yong Yoon ,  Kyung-Ryun Kim

    IPC: G11C16/04 ,  G11C16/34 ,  G11C11/56

    CPC classification number: G11C16/3427 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3459

    Abstract: A method of writing data in a non-volatile memory device includes receiving a program command and a first row address corresponding to a first word line; performing a first partial programming operation with respect to first memory cells coupled to the first word line; performing a second partial programming operation with respect to second memory cells coupled to a second word line adjacent to the first word line; performing a first verification operation by verifying the first partial programming operation; and selectively performing a first additional programming operation with respect to the first memory cells depending on a result of the first verification operation.

    Abstract translation: 一种在非易失性存储器件中写入数据的方法包括：接收与第一字线对应的程序命令和第一行地址; 对与第一字线耦合的第一存储器单元执行第一部分编程操作; 对与第一字线相邻的第二字线耦合的第二存储器单元执行第二部分编程操作; 通过验证第一部分编程操作来执行第一验证操作; 以及根据所述第一验证操作的结果选择性地执行关于所述第一存储器单元的第一附加编程操作。

    Memory device and read method of memory device
    17.
    发明授权
    Memory device and read method of memory device 有权

    公开(公告)号：US09741440B2

    公开(公告)日：2017-08-22

    申请号：US15294849

    申请日：2016-10-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung-Ryun Kim

    IPC: G11C16/26 ,  G11C16/14 ,  G11C8/08 ,  G11C8/14 ,  G11C16/04 ,  G11C16/08

    CPC classification number: G11C16/26 ,  G11C8/08 ,  G11C8/14 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/14

    Abstract: In a method of reading a memory device, difference information is generated based on a distance difference between a position of a read word-line and a position of a boundary word-line. The read word-line corresponds to a read address. The boundary word-line corresponds to a last programmed word-line in a memory block included in a memory cell array. A read word-line voltage and an adjacent word-line voltage are determined based on the difference information. The read word-line voltage is applied to the read word-line. The adjacent word-line voltage is applied to an adjacent word-line that is adjacent to the read word-line. A read data corresponding to the read address is outputted based on the read word-line voltage and the adjacent word-line voltage. The read method of the memory device according to example embodiments may be capable of increasing the performance by controlling the voltages applied to the adjacent word-line and the read word-line according to the difference information determined based on the read word-line and the boundary word-line.

Patent Agency Ranking