公开(公告)号：US20130174980A1

公开(公告)日：2013-07-11

申请号：US13548885

申请日：2012-07-13

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C09J5/06

CPC classification number: C09J5/06 ,  C08G77/60 ,  C08K3/04 ,  C08K3/08 ,  C08K3/14 ,  C09D7/61 ,  C09D7/67 ,  C09D7/68 ,  C09D7/69 ,  C09D183/16 ,  C09J183/16 ,  H01L21/67306 ,  Y10T156/10 ,  C08K3/02

Abstract: A method of using a high-strength bonding and coating mixture is disclosed. The mixture includes a silicon compound having a polycarbosilane backbone and a powder having a plurality of individual powder grains. Each of the powder grains has a diameter substantially between 0.05 micrometers and 50 micrometers. The mixture is applied to one or more work pieces and the work piece(s) is (are) heated in either an inert or reduction environment to a temperature sufficient to decompose the silicon compound into gaseous atoms and radicals of silicon and carbon.

Abstract translation: 公开了一种使用高强度粘结和涂覆混合物的方法。 该混合物包括具有聚碳硅烷主链的硅化合物和具有多个单个粉末颗粒的粉末。 每个粉末颗粒的直径基本上在0.05微米和50微米之间。 将混合物施加到一个或多个工件上，并将工件在惰性或还原环境中加热到足以将硅化合物分解成气态原子和硅和碳自由基的温度。

公开(公告)号：US20110117514A1

公开(公告)日：2011-05-19

申请号：US12618566

申请日：2009-11-13

Applicant: Sang In Lee ,  Fergal John O'Moore ,  Karl Anthony Williams

Inventor： Sang In Lee ,  Fergal John O'Moore ,  Karl Anthony Williams

IPC: H01L21/683 ,  C23C14/48 ,  B32B9/00

CPC classification number: C23C8/80 ,  C23C8/02 ,  H01L21/68757

Abstract: A method of fabricating the semiconductor wafer processing fixtures for having longer longevity on high stressed film applications such as LPCVD-SiN, silicon carbide and other ceramics than that of non-processed parts. One aspect of the invention includes nitriding, oxidizing, or carbiding a surface layer of a polysilicon part, such as furnaceware, for converting silicon to a silicon compound and its converted surface covers and masks the underlying polycrystalline structure. A plasma immersion ion implantation of a heavy noble gas or carbon, silicon or nitrogen is followed by to form high-energy states creating gettering states adjacent the surface and the ion implanted region serves to anchor production layers such as LPCVD-SiN forming on the polysilicon part. As a result of gettering effect, tightly bonded high stressed film onto a polysilicon part allows the CVD deposition of much thicker films without peeling or cracking as long as the gettering effect remains.

Abstract translation: 一种制造半导体晶片加工夹具的方法，其在诸如LPCVD-SiN，碳化硅和其它陶瓷的高应力膜应用上具有比非加工部件更长的寿命。 本发明的一个方面包括氮化，氧化或碳化多晶硅部分（例如炉具）的表面层，用于将硅转化为硅化合物，并且其转化的表面覆盖并掩蔽下面的多晶结构。 重稀土气体或碳，硅或氮的等离子体浸没离子注入之后，形成高能状态，从而形成邻近表面的吸气状态，并且离子注入区域用于锚定诸如在多晶硅上形成的LPCVD-SiN的生产层 部分。 作为吸气效应的结果，只要吸附效果仍然存在，紧密结合的高应力膜就可以使CVD沉积更厚的膜而不会发生剥离或开裂。

公开(公告)号：US09129913B2

公开(公告)日：2015-09-08

申请号：US13276221

申请日：2011-10-18

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H01L23/31 ,  C23C16/04 ,  C23C16/455

CPC classification number: H01L23/3192 ,  C23C16/042 ,  C23C16/45551 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The configuration of one or more barrier layers for encapsulating a device is controlled by setting parameters of atomic layer deposition (ALD). A substrate formed with the device is placed on a susceptor and exposed to multiple cycles of source precursor gas and reactant precursor gas injected by reactors of a deposition device. By adjusting one or more of (i) the relative speed between the susceptor and the reactors, (ii) configuration of the reactors, and (iii) flow rates of the gases injected by the reactors, the configuration of the layers deposited on the device can be controlled. By controlling the configuration of the deposited layers, defects in the deposited layers can be prevented or reduced.

Abstract translation: 通过设置原子层沉积（ALD）的参数来控制用于封装器件的一个或多个阻挡层的构造。 用该装置形成的衬底放置在基座上并暴露于通过沉积装置的反应器注入的源前体气体和反应物前体气体的多个循环。 通过调整（i）基座和反应器之间的相对速度，（ii）反应器的构造和（iii）由反应器注入的气体的流速，沉积在装置上的层的配置的一个或多个 可以控制。 通过控制沉积层的结构，可以防止或减少沉积层中的缺陷。

公开(公告)号：US08895108B2

公开(公告)日：2014-11-25

申请号：US13563611

申请日：2012-07-31

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/50 ,  C23C16/54 ,  C23C16/06 ,  C23C16/34

CPC classification number: C23C16/45538 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45517 ,  C23C16/45523 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/50 ,  C23C16/545

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract translation: 使用由等离子体产生的自由基形成薄膜的方法可包括使用等离子体产生反应物前体的自由基; 通过将衬底暴露于反应物前体的自由基和源前体的混合物，在衬底上形成第一薄膜; 将基底暴露于源前体; 以及通过将所述衬底暴露于所述反应物前体和所述源前体的自由基的混合物而在所述衬底上形成第二薄膜。 由于在第一薄膜的形成和第二薄膜的形成之间将基板暴露于源极前体，因此可以提高沉积速率。

公开(公告)号：US08722526B2

公开(公告)日：2014-05-13

申请号：US13560881

申请日：2012-07-27

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H01L21/28 ,  H01L21/3205 ,  H01L31/0256 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B25/183 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/267

Abstract: Embodiments relate to growing an epitaxy gallium-nitride (GaN) layer on a porous silicon (Si) substrate. The porous Si substrate has a larger surface area compared to non-porous Si substrate to distribute and accommodate stress caused by materials deposited on the substrate. An interface adjustment layer (e.g., transition metal silicide layer) is formed on the porous silicon substrate to promote growth of a buffer layer. A buffer layer formed for GaN layer may then be formed on the silicon substrate. A seed-layer for epitaxial growth of GaN layer is then formed on the buffer layer.

Abstract translation: 实施例涉及在多孔硅（Si）衬底上生长外延氮化镓（GaN）层。 与非多孔Si衬底相比，多孔Si衬底具有更大的表面积，以分配和适应由沉积在衬底上的材料引起的应力。 在多孔硅衬底上形成界面调整层（例如，过渡金属硅化物层），以促进缓冲层的生长。 然后可以在硅衬底上形成用于GaN层的缓冲层。 然后在缓冲层上形成用于GaN层外延生长的晶种层。

公开(公告)号：US08470718B2

公开(公告)日：2013-06-25

申请号：US12539477

申请日：2009-08-11

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H01L21/31

CPC classification number: H01L21/02521 ,  C23C16/45551 ,  H01L21/4814

Abstract: A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

Abstract translation: 气相沉积反应器包括填充有第一材料的腔室和腔室中的至少一个反应模块。 反应模块可以被配置为使得基板通过反应模块通过基板和反应模块之间的相对运动。 反应模块可以包括用于将第二材料注入基底的注射单元。 一种形成薄膜的方法包括将基板定位在室中，填充室中的第一材料，相对于室中的反应模块移动基板，以及在基板通过反应模块时将第二材料注入到基板。

公开(公告)号：US20110073236A1

公开(公告)日：2011-03-31

申请号：US12890037

申请日：2010-09-24

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: B32B37/02 ,  B05D3/02 ,  C09D5/00

CPC classification number: C09J5/06 ,  C08G77/60 ,  C08K3/04 ,  C08K3/08 ,  C08K3/14 ,  C09D7/61 ,  C09D7/67 ,  C09D7/68 ,  C09D7/69 ,  C09D183/16 ,  C09J183/16 ,  H01L21/67306 ,  Y10T156/10 ,  C08K3/02

Abstract: A mixture includes a silicon compound having a polycarbosilane backbone, and a powder having a plurality of individual powder grains, wherein each of the plurality of powder grains has a diameter substantially between 0.05 micrometers and 50 micrometers.

Abstract translation: 混合物包括具有聚碳硅烷骨架的硅化合物和具有多个单独的粉末颗粒的粉末，其中多个粉末颗粒中的每一个具有基本上在0.05微米和50微米之间的直径。

公开(公告)号：US20100291281A1

公开(公告)日：2010-11-18

申请号：US12454311

申请日：2009-05-14

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: A23L1/312 ,  A23L1/01 ,  A23L1/0562

CPC classification number: A23L13/428 ,  A23L7/109 ,  A23L7/13 ,  A23L13/20 ,  A23L21/10 ,  A23L21/20 ,  A23L29/284

Abstract: A process for making a diet food product, includes the stage of putting a certain amount of treated pork skin into an s-cutter and pouring in boiled water with 100:400 ratio, then by opening the steam valve and applying steam into the pot for 20-30 minute then, in order to reduce a fat portion, pour the water and apply the steam again for 30˜60 minute with cover closed, then the temperature and the pressure increase and collected at the bottom of the pot, cutting the boiled pork skin, applying 0.67% of salt to produce a gel and making a gel that is sticky, to eliminate the smell, add ginger, garlic, ginseng, soju and then fix the form.

Abstract translation: 制作减肥食品的过程包括将一定量的经过处理的猪肉皮肤放入切割机并以100：400的比例倒入开水的阶段，然后打开蒸汽阀并将蒸汽加入锅中 20-30分钟后，为了减少脂肪部分，倒入水中，再重新打开蒸汽30〜60分钟，盖子封闭，然后温度和压力增加并收集在锅底部，切开煮沸的 猪肉皮肤，加入0.67％的盐以产生凝胶，并制成粘稠的凝胶，消除气味，加入姜，大蒜，人参，soju，然后固定。

公开(公告)号：US09163310B2

公开(公告)日：2015-10-20

申请号：US13397590

申请日：2012-02-15

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H05H1/24 ,  C23C16/455 ,  B05D1/36 ,  B05D1/38 ,  B05D1/00

CPC classification number: C23C16/45534 ,  B05D1/36 ,  B05D1/38 ,  B05D1/60 ,  B05D1/62 ,  C23C16/345 ,  C23C16/45517 ,  C23C16/45553 ,  C23C16/513

Abstract: Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.

Abstract translation: 实施例涉及在不同的沉积过程阶段使用自由基。 可以通过在远离衬底的电抗器中的电极上施加电压来产生自由基。 在分子层沉积（MLD），原子层沉积（ALD）和化学气相沉积（CVD）的不同阶段将基团注入到衬底上，以改善沉积层的特性，从而能够沉积不可行的材料和/或 增加沉积速率。 用于产生自由基的气体可包括惰性气体和其它气体。 基团可以分解前体，活化沉积层的表面或引起沉积的分子之间的交联。

公开(公告)号：US08877300B2

公开(公告)日：2014-11-04

申请号：US13369717

申请日：2012-02-09

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/30 ,  C23C16/40

CPC classification number: C23C16/513 ,  C23C16/308 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45542 ,  C23C16/45551

Abstract: Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.

Abstract translation: 使用氮化合物的混合物的自由基进行原子层沉积（ALD），以增加沉积在基底上的层的沉积速率。 将氮化合物气体的混合物注入自由基反应器中。 通过在自由基反应器中的两个电极上施加电压以产生氮化合物气体的自由基来产生复合气体的等离子体。 将基团注入预先注入源前体的基底的表面上。 该基团用作反应物前体并在衬底上沉积一层材料。