公开(公告)号：US09825181B2

公开(公告)日：2017-11-21

申请号：US15374356

申请日：2016-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Kazuya Sugimoto ,  Tsutomu Murakawa ,  Motoki Nakashima ,  Shinpei Matsuda ,  Noritaka Ishihara ,  Daisuke Kurosaki ,  Toshimitsu Obonai ,  Hiroshi Kanemura ,  Junichi Koezuka

IPC: H01L29/22 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H03K17/687 ,  H01L27/105 ,  G09G3/20

CPC classification number: H01L29/7869 ,  G09G3/2092 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/78696 ,  H03K17/687

Abstract: A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm−3 and lower than or equal to 5×1016 cm−3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.

公开(公告)号：US09153649B2

公开(公告)日：2015-10-06

申请号：US14091907

申请日：2013-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Hiroshi Kanemura ,  Yasuharu Hosaka ,  Shuhei Yokoyama ,  Toshimitsu Obonai

IPC: G01R31/02 ,  H01L29/22 ,  H01L29/786 ,  H01L27/146 ,  G09G3/00 ,  G09G3/32 ,  G09G3/36 ,  G01R31/265

CPC classification number: H01L29/7869 ,  G01R31/2656 ,  G09G3/006 ,  G09G3/3225 ,  G09G3/3648 ,  H01L27/14678 ,  H01L27/14692 ,  H01L29/22

Abstract: A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor.

Abstract translation: 提供了具有低密度陷阱状态的半导体层。 提供具有稳定电特性的晶体管。 提供具有高场效应迁移率的晶体管。 提供包括晶体管的半导体器件。 提供了一种用于评估半导体层的方法。 提供了一种用于评估晶体管的方法。 提供了一种用于评估半导体器件的方法。 例如，提供了可以用于晶体管的沟道形成区域的具有低缺陷密度的半导体层，在沟道形成区域中包括具有低缺陷密度的半导体层的晶体管，或包括晶体管的半导体器件 晶体管。

公开(公告)号：US11764074B2

公开(公告)日：2023-09-19

申请号：US17011019

申请日：2020-09-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC: H01L29/786 ,  H01L29/24 ,  H01L21/477 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L21/477 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78606

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US11637208B2

公开(公告)日：2023-04-25

申请号：US17262793

申请日：2019-07-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yasutaka Nakazawa ,  Seiji Yasumoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L51/50 ,  H05B33/22

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. A semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The second insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The first insulating film, the second insulating film, and the third insulating film each contain an oxide. The first insulating film includes a portion in contact with the semiconductor layer. The semiconductor layer contains indium, gallium, and oxygen and includes a region with an indium content percentage higher than a gallium content percentage.

公开(公告)号：US10770310B2

公开(公告)日：2020-09-08

申请号：US16524733

申请日：2019-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC: H01L21/477 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L21/28

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US20190051727A1

公开(公告)日：2019-02-14

申请号：US16152850

申请日：2018-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  H01L27/12 ,  C04B35/622 ,  H01L29/786 ,  H01L29/778 ,  C23C14/58 ,  C23C14/08 ,  C04B35/01 ,  C03C17/245 ,  C04B35/453

CPC classification number: H01L29/24 ,  C03C17/245 ,  C03C2217/23 ,  C03C2218/151 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/787 ,  C04B2235/96 ,  C23C14/08 ,  C23C14/5853 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A metal oxide film includes indium, , ( is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US10205008B2

公开(公告)日：2019-02-12

申请号：US15664353

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshimitsu Obonai ,  Hironobu Takahashi ,  Yasuharu Hosaka ,  Masahiro Watanabe ,  Takuya Handa ,  Yukinori Shima ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L21/336 ,  H01L29/66 ,  H01L21/02 ,  H01L21/67

Abstract: Provided is a semiconductor device with favorable electrical characteristics. Provided is a semiconductor device with stable electrical characteristics. Provided is a manufacturing method of a semiconductor device with a high yield. The manufacturing method includes a first step of forming an insulating film over a substrate, a second step of transferring the substrate in an atmospheric atmosphere, a third step of heating the insulating film, and a fourth step of forming a metal oxide film. The third step and the fourth step are successively performed in an atmosphere where water vapor partial pressure is lower than water vapor partial pressure in the atmospheric air.

公开(公告)号：US09893202B2

公开(公告)日：2018-02-13

申请号：US15231061

申请日：2016-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Daisuke Kurosaki ,  Yukinori Shima ,  Toshimitsu Obonai

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02653 ,  H01L29/66969

Abstract: A method for manufacturing a semiconductor device has a first step including a step of forming an oxide semiconductor film, a second step including a step of forming a gate insulating film over the oxide semiconductor film and a step of forming a gate electrode over the gate insulating film, a third step including a step of forming a nitride insulating film over the oxide semiconductor film and the gate electrode, a fourth step including a step of forming an oxide insulating film over the nitride insulating film, a fifth step including a step of forming an opening in the nitride insulating film and the oxide insulating film, and a sixth step including a step of forming source and drain electrodes over the oxide insulating film so as to cover the opening. In the third step, the nitride insulating film is formed through at least two steps: plasma treatment and deposition treatment. The two steps are each performed at a temperature higher than or equal to 150° C. and lower than 300° C.

公开(公告)号：US09634031B2

公开(公告)日：2017-04-25

申请号：US14741840

申请日：2015-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masami Jintyou ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Suzunosuke Hiraishi

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L27/1225 ,  H01L21/385 ,  H01L21/441 ,  H01L21/47573 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: To suppress change in electric characteristics and improve reliability of a semiconductor device including a transistor formed using an oxide semiconductor. A semiconductor device includes a transistor including a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, and a pair of electrodes. The gate electrode and the oxide semiconductor film overlap with each other. The oxide semiconductor film is located between the first insulating film and the second insulating film and in contact with the pair of electrodes. The first insulating film is located between the gate electrode and the oxide semiconductor film. An etching rate of a region of at least one of the first insulating film and the second insulating film is higher than 8 nm/min when etching is performed using a hydrofluoric acid.

公开(公告)号：US09437428B2

公开(公告)日：2016-09-06

申请号：US14552064

申请日：2014-11-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Oota ,  Noritaka Ishihara ,  Motoki Nakashima ,  Yoichi Kurosawa ,  Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka

IPC: H01L21/02 ,  H01L49/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/127 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/425 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/60 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

Abstract translation: 提供一种制造包含具有导电性的氧化物半导体膜的半导体器件的方法，或者包括具有透光性和导电性的氧化物半导体膜的半导体器件的制造方法。 制造半导体器件的方法包括以下步骤：在第一绝缘膜上形成氧化物半导体膜，在氧化物半导体膜中包含的氧被释放的气氛中进行第一次热处理，并在含氢的 从而形成具有导电性的氧化物半导体膜。