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    LUMINOUS MEANS
    12.
    发明申请
    LUMINOUS MEANS 有权
    LUMINOUS手段

    公开(公告)号：US20110114975A1

    公开(公告)日：2011-05-19

    申请号：US12992230

    申请日：2009-08-07

    Applicant: Dieter Eissler ,  Siegfried Herrmann

    Inventor： Dieter Eissler ,  Siegfried Herrmann

    IPC: H01L27/15 ,  H01L33/50

    CPC classification number: H01L25/0753 ,  H01L25/0756 ,  H01L33/44 ,  H01L33/54 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A luminous means includes a first group of semiconductor chips and a second group of semiconductor chips, each group includes at least one semiconductor chip, wherein the first and second groups of semiconductor chips are arranged laterally alongside one another at least in part with respect to a main emission direction of the luminous means, and a third group of semiconductor chips which includes at least one semiconductor chip and is disposed downstream of the first and the second group with respect to the main emission direction, wherein each group of semiconductor chips emits electromagnetic radiation in wavelength ranges that differ from one another in pairs, radiation emitted by the third group of semiconductor chips has the shortest-wave wavelength range, radiation emitted by the first and second group of semiconductor chips at least partly passes into the at least one semiconductor chip of the third group, and mixed radiation is emitted by an emission area of the luminous means.

    Abstract translation: 发光装置包括第一组半导体芯片和第二组半导体芯片，每组包括至少一个半导体芯片，其中第一组半导体芯片和第二组半导体芯片相对于一个半导体芯片至少部分地彼此横向排列 发光装置的主发射方向以及包括至少一个半导体芯片并且相对于主发射方向设置在第一组和第二组的下游的第三组半导体芯片，其中每组半导体芯片发射电磁辐射 在成对地彼此不同的波长范围中，由第三组半导体芯片发射的辐射具有最短波长的波长范围，由第一和第二组半导体芯片发射的辐射至少部分地进入至少一个半导体芯片 并且发光装置的发射区域发射混合的辐射 。

    Radiation-Emitting Device
    13.
    发明申请
    Radiation-Emitting Device 有权
    辐射发射装置

    公开(公告)号：US20100264843A1

    公开(公告)日：2010-10-21

    申请号：US12747459

    申请日：2008-12-03

    Applicant: Siegfried Herrmann

    Inventor： Siegfried Herrmann

    IPC: H01L33/08 ,  H05B37/02

    CPC classification number: H01L27/15 ,  H01L25/0756 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A radiation-emitting device includes a first active semiconductor layer embodied for the emission of electromagnetic radiation and for direct contact with connection electrodes, and a second active semiconductor layer embodied for the emission of electromagnetic radiation and for direct contact with connection electrodes. The first active semiconductor layer and the further second active semiconductor layer are arranged in a manner stacked one above another.

    Abstract translation: 辐射发射器件包括实现用于发射电磁辐射并用于与连接电极直接接触的第一有源半导体层以及用于发射电磁辐射并用于与连接电极直接接触的第二有源半导体层。 第一有源半导体层和另外的第二有源半导体层以彼此层叠的方式排列。

    METHOD OF PRODUCING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR CHIP
    15.
    发明申请
    METHOD OF PRODUCING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR CHIP 有权
    生产至少一个光电半导体芯片的方法

    公开(公告)号：US20140051194A1

    公开(公告)日：2014-02-20

    申请号：US14004442

    申请日：2012-03-12

    Applicant: Siegfried Herrmann ,  Stefan Illek

    Inventor： Siegfried Herrmann ,  Stefan Illek

    IPC: H01L33/60

    CPC classification number: H01L33/60 ,  H01L24/19 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/32341 ,  H01L2924/00

    Abstract: A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a protective material, the protective material covering the outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure.

    Abstract translation: 一种制造至少一个光电子半导体芯片的方法包括：提供至少一个光电结构，包括生长支持体和具有有源区域的半导体层序列，半导体层序列外延地沉积在生长支持体上，提供载体， 至少一个光电结构到其载体上，其侧面远离生长载体，用保护材料涂覆至少一个光电结构，该保护材料覆盖远离载体的生长载体和侧面的外表面 生长支持物和半导体层序列，以及从至少一个光电子结构的半导体层序列分离生长支持物。

    Arrangement of optoelectronic components
    16.
    发明授权
    Arrangement of optoelectronic components 有权
    光电组件的布置

    公开(公告)号：US08497517B2

    公开(公告)日：2013-07-30

    申请号：US13201954

    申请日：2010-03-08

    Applicant: Siegfried Herrmann

    Inventor： Siegfried Herrmann

    IPC: H01L33/00

    CPC classification number: H05K1/183 ,  H01L25/0756 ,  H01L2924/0002 ,  H05K1/14 ,  H05K2201/09481 ,  H05K2201/10106 ,  H05K2201/10515 ,  H05K2201/1053 ,  H05K2201/10727 ,  H01L2924/00

    Abstract: An arrangement includes at least two optoelectronic individual elements. At least two of the individual elements overlap partially in a lateral direction. Indirect or direct electrical contacting between the at least two laterally overlapping individual elements is brought about by at least one conductor track on a carrier top of the one individual element and by at least one conductor track on a carrier bottom of the other individual element.

    Abstract translation: 一种装置包括至少两个光电单独元件。 单个元件中的至少两个在横向方向上部分重叠。 所述至少两个横向重叠的单独元件之间的间接或直接的电接触由所述一个单独元件的载体顶部上的至少一个导体轨道和另一个单独元件的载体底部上的至少一个导体轨道引起。

    OPTOELECTRONIC MODULE
    18.
    发明申请
    OPTOELECTRONIC MODULE 有权
    光电模块

    公开(公告)号：US20110108860A1

    公开(公告)日：2011-05-12

    申请号：US12922199

    申请日：2009-05-13

    Applicant: Dieter Eissler ,  Siegfried Herrmann

    Inventor： Dieter Eissler ,  Siegfried Herrmann

    IPC: H01L27/15 ,  H01L33/00

    CPC classification number: H01S5/0261 ,  H01L25/167 ,  H01L27/32 ,  H01L2924/0002 ,  H01S5/36 ,  H01S5/4025 ,  H01L2924/00

    Abstract: An optoelectronic module includes a layer structure having a plurality of semiconductor layers including a substrate layer, a first layer arrangement and a second layer arrangement arrangement, wherein 1) the first layer arrangement has a light-emitting layer arranged on the substrate layer, 2) the second layer arrangement contains at least one circuit that controls an operating state of the light-emitting layer, and 3) the second layer arrangement is arranged on the substrate layer and/or surrounded by the substrate layer.

    Abstract translation: 光电子模块包括具有多个半导体层的层结构，所述半导体层包括衬底层，第一层布置和第二层布置布置，其中1）第一层布置具有布置在衬底层上的发光层，2） 第二层布置包含控制发光层的工作状态的至少一个电路，以及3）第二层布置被布置在基底层上和/或被基底层包围。

    Method for Producing a Luminous Device and Luminous Device
    19.
    发明申请
    Method for Producing a Luminous Device and Luminous Device 有权
    制造发光装置和发光装置的方法

    公开(公告)号：US20110012142A1

    公开(公告)日：2011-01-20

    申请号：US12838075

    申请日：2010-07-16

    Applicant: Berthold Hahn ,  Markus Maute ,  Siegfried Herrmann

    Inventor： Berthold Hahn ,  Markus Maute ,  Siegfried Herrmann

    IPC: H01L33/62 ,  H01L33/48

    CPC classification number: H01L25/167 ,  H01L2224/16225 ,  H01L2924/13091 ,  H01L2924/00

    Abstract: A method for producing a luminous device is specified. A number of light emitting diodes each have a radiation-transmissive carrier and at least two semiconductor bodies spatially separated from one another. Each semiconductor body is provided for generating electromagnetic radiation. The semiconductor bodies can be driven separately from one another and the semiconductor bodies are arranged at the top side of the radiation-transmissive carrier on the radiation-transmissive carrier. A chip assemblage is composed of CMOS chips each of which has at least two connection locations at its top side. At least one of the light emitting diodes is connected to one of the CMOS chips. The light emitting diode is arranged, at the top side of the radiation-transmissive carrier, at the top side of the CMOS chip and each semiconductor body of the light emitting diode is connected to a connection location of the CMOS chip.

    Abstract translation: 规定了发光装置的制造方法。 多个发光二极管各自具有辐射透射载体和在空间上彼此分离的至少两个半导体体。 每个半导体本体被提供用于产生电磁辐射。 半导体本体可以彼此分开地驱动，并且半导体本体被布置在辐射透射载体上的辐射透射性载体的顶侧。 芯片组合由CMOS芯片组成，每个芯片在其顶侧具有至少两个连接位置。 至少一个发光二极管连接到CMOS芯片之一。 发光二极管在辐射透射载体的顶侧设置在CMOS芯片的顶侧，并且发光二极管的每个半导体本体连接到CMOS芯片的连接位置。

    Optoelectronic Component
    20.
    发明申请
    Optoelectronic Component 有权
    光电元件

    公开(公告)号：US20100308362A1

    公开(公告)日：2010-12-09

    申请号：US12809682

    申请日：2008-12-04

    Applicant: Siegfried Herrmann

    Inventor： Siegfried Herrmann

    IPC: H01L33/44 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64

    CPC classification number: H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L33/641 ,  H01L33/647 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic component (10) comprising at least one metal body (15) and a layer sequence (17), which is applied on a base body (11) and which is embodied to emit an electromagnetic radiation and to which an insulation (12) is applied on at least one side area, wherein the at least one metal body (15) is applied to at least one region of the insulation (12) and is embodied in such a way that it is in thermally conductive contact with the base body (11).

    Abstract translation: 一种光电子部件（10），包括至少一个金属体（15）和层序列（17），其被施加在基体（11）上，并被实施为发射电磁辐射，绝缘体（12） 施加在至少一个侧面区域上，其中所述至少一个金属体（15）被施加到所述绝缘体（12）的至少一个区域并被实施为使其与所述基体导热接触 （11）。

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