公开(公告)号：US5354710A

公开(公告)日：1994-10-11

申请号：US17449

申请日：1993-02-12

申请人： Hideichi Kawaguchi ,  Yoshitaka Tsunashima ,  Kikuo Yamabe ,  Katsuya Okumura

发明人： Hideichi Kawaguchi ,  Yoshitaka Tsunashima ,  Kikuo Yamabe ,  Katsuya Okumura

IPC分类号： H01L21/225 ,  H01L21/334 ,  H01L21/8242 ,  H01L21/00 ,  H01L21/02 ,  H01L21/385

CPC分类号： H01L27/10861 ,  H01L21/2256 ,  H01L29/66181 ,  Y10S438/923

摘要： A method of manufacturing semiconductor devices comprises the steps of preparing a semiconductor substrate having a surface and a natural oxide film on the surface, forming an adsorption enhancement layer on the surface of the semiconductor substrate, forming an impurity adsorption layer containing impurities on the adsorption enhancement layer, and thermally diffusing the impurities through the adsorption enhancement layer and the natural oxide film into the substrate.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在表面上制备具有表面和自然氧化膜的半导体衬底，在半导体衬底的表面上形成吸附增强层，在吸附增强层上形成含有杂质的杂质吸附层 并且通过吸附增强层和天然氧化物膜将杂质热扩散到基底中。

公开(公告)号：US20110039418A1

公开(公告)日：2011-02-17

申请号：US12865969

申请日：2009-02-06

申请人： Yoshiro Kabe ,  Junichi Kitagawa ,  Kikuo Yamabe

发明人： Yoshiro Kabe ,  Junichi Kitagawa ,  Kikuo Yamabe

IPC分类号： H01L21/31 ,  C23C16/40

CPC分类号： H01L21/3105 ,  C23C16/0272 ,  C23C16/402 ,  C23C16/45565 ,  C23C16/511 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/28008 ,  H01L21/31612 ,  H01L21/31654 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/66765

摘要： In order to form an insulating film, which constitutes a flat interface with silicon, by CVD, a surface of silicon is oxidized to form a silicon oxide film using a plasma treatment apparatus in which microwaves are introduced into a chamber through a flat antenna having a plurality of holes. A silicon oxide film is formed as an insulating film on the silicon oxide film by CVD. Further, in the plasma treatment apparatus, a treating gas containing a noble gas and oxygen is introduced into the chamber, and, further, microwaves are introduced into the chamber through the flat antenna. Plasma is generated under a pressure in the range of not less than 6.7 Pa and not more than 533 Pa to modify the insulating film with the plasma.

摘要翻译： 为了通过CVD形成与硅形成平坦界面的绝缘膜，使用等离子体处理装置将硅的表面氧化形成氧化硅膜，其中微波通过具有 多个孔。 通过CVD在氧化硅膜上形成氧化硅膜作为绝缘膜。 此外，在等离子体处理装置中，将含有惰性气体和氧气的处理气体引入室内，并且还通过平板天线将微波引入室内。 在不低于6.7Pa且不大于533Pa的压力下产生等离子体，以便用等离子体改性绝缘膜。

公开(公告)号：US5757063A

公开(公告)日：1998-05-26

申请号：US730322

申请日：1996-10-11

申请人： Hiroshi Tomita ,  Mami Takahashi ,  Kikuo Yamabe

发明人： Hiroshi Tomita ,  Mami Takahashi ,  Kikuo Yamabe

IPC分类号： H01L21/322

CPC分类号： H01L21/3225 ,  H01L21/3221 ,  Y10S257/913

摘要： A semiconductor device includes a semiconductor substrate having first and second main surfaces and including a denuded zone, in which an oxygen concentration is lower than that in an inner portion of the semiconductor substrate and which does not include a bulk microdefect, and an intrinsic gettering zone, and element region formed on the first surface of the semiconductor substrate, and an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, and formed directly on at least a portion of the intrinsic gettering region or the denuded zone entirely or partially thinned of the second main surface of the semiconductor substrate. A method for manufacturing a semiconductor device includes the steps of forming an element region on a first main surface of a semiconductor substrate having first and second main surfaces and having an intrinsic gettering zone, and forming an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, directly on at least a portion of the intrinsic gettering region of the second main surface of the semiconductor substrate.

摘要翻译： 一种半导体器件包括具有第一和第二主表面并且包括其中氧浓度低于半导体衬底的内部部分且不包括体微缺陷的溶解区的半导体衬底，以及固有的吸杂区 以及形成在半导体衬底的第一表面上的元件区域和由非晶半导体材料制成的非固有吸杂层，其捕获金属杂质，并且直接在至少一部分本征吸气区域或裸露区域上形成 或部分地薄化半导体衬底的第二主表面。 一种制造半导体器件的方法包括以下步骤：在具有第一和第二主表面并具有固有吸气区的半导体衬底的第一主表面上形成元件区，并形成由非晶半导体材料制成的外部吸气层 其直接在半导体衬底的第二主表面的固有吸气区的至少一部分上捕获金属杂质。

公开(公告)号：US5698891A

公开(公告)日：1997-12-16

申请号：US667884

申请日：1996-06-20

申请人： Hiroshi Tomita ,  Mami Saito ,  Kikuo Yamabe

发明人： Hiroshi Tomita ,  Mami Saito ,  Kikuo Yamabe

IPC分类号： H01L21/322 ,  H01L29/32 ,  H01L21/38 ,  H01L29/36

CPC分类号： H01L21/3221 ,  H01L21/3225 ,  H01L29/32 ,  Y10S257/913

摘要： A semiconductor device includes a semiconductor substrate having first and second main surfaces and including a denuded zone, in which an oxygen concentration is lower than that in an inner portion of the semiconductor substrate and which does not include a bulk microdefect, and an intrinsic gettering zone, an element region formed on the first surface of the semiconductor substrate, and an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, and formed directly on at least a portion of the intrinsic gettering region or the denuded zone entirely or partially thinned of the second main surface of the semiconductor substrate. A method for manufacturing a semiconductor device includes the steps of forming an element region on a first main surface of a semiconductor substrate having first and second main surfaces and having an intrinsic gettering zone, and forming an extrinsic gettering layer, made of an amorphous semiconductor material which traps a metal impurity, directly on at least a portion of the intrinsic gettering region of the second main surface of the semiconductor substrate.

摘要翻译： 一种半导体器件包括具有第一和第二主表面并且包括其中氧浓度低于半导体衬底的内部部分且不包括体微缺陷的溶解区的半导体衬底，以及固有的吸杂区 ，形成在半导体衬底的第一表面上的元件区域和由捕获金属杂质的非晶半导体材料制成的外部吸杂层，并且直接在至少一部分本征吸气区域或裸露区域上形成 或部分地薄化半导体衬底的第二主表面。 一种制造半导体器件的方法包括以下步骤：在具有第一和第二主表面并具有固有吸气区的半导体衬底的第一主表面上形成元件区，并形成由非晶半导体材料制成的外部吸气层 其直接在半导体衬底的第二主表面的固有吸气区的至少一部分上捕获金属杂质。

公开(公告)号：US5514904A

公开(公告)日：1996-05-07

申请号：US297114

申请日：1994-08-26

申请人： Shinji Onga ,  Takako Okada ,  Kouichirou Inoue ,  Yoshiaki Matsushita ,  Kikuo Yamabe ,  Hiroaki Hazama ,  Haruo Okano

发明人： Shinji Onga ,  Takako Okada ,  Kouichirou Inoue ,  Yoshiaki Matsushita ,  Kikuo Yamabe ,  Hiroaki Hazama ,  Haruo Okano

IPC分类号： H01L21/8247 ,  H01L21/00 ,  H01L21/316 ,  H01L29/00 ,  H01L29/51 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L29/517

摘要： A semiconductor device includes a monocrystalline silicon substrate, an insulating film consisting of a monocrystalline silicon oxide formed on the surface of the monocrystalline silicon substrate, and a conductive film formed on the insulating film. The monocrystalline silicon substrate has a (100) plane orientation, the insulating film essentially consists of .beta.-cristobalite having a unit structure in a P4.sub.1 2.sub.1 2 structural expression in such a manner that every other silicon atoms of four silicon atoms aligned about a C-axis are arranged on two adjacent silicon atoms aligned in a 110! direction on an Si (100) plane, and that a plane including the C-axis of the .beta.-cristobalite and the 110! direction is set perpendicular to the (100) plane.

摘要翻译： 半导体器件包括单晶硅衬底，由形成在单晶硅衬底的表面上的单晶氧化硅组成的绝缘膜和形成在绝缘膜上的导电膜。 单晶硅衬底具有（100）面取向，绝缘膜基本上由具有P41212结构表达式的单元结构的β-方英石组成，使得围绕C轴排列的四个硅原子的每隔一个硅原子为 布置在Si（100）平面上沿[110]方向排列的两个相邻的硅原子上，并且包括β-方英石的C轴和[110]方向的平面垂直于（100）平面 。

公开(公告)号：US5173440A

公开(公告)日：1992-12-22

申请号：US517331

申请日：1990-05-01

申请人： Yoshitaka Tsunashima ,  Kenji Todori ,  Kikuo Yamabe

发明人： Yoshitaka Tsunashima ,  Kenji Todori ,  Kikuo Yamabe

IPC分类号： H01L21/225 ,  H01L21/334 ,  H01L21/336

CPC分类号： H01L29/66181 ,  H01L21/2255 ,  H01L29/66575 ,  Y10S148/014

摘要： In fabricating a semiconductor device, when impurities are diffused from a silicon oxide layer containing the impurities to a semiconductor layer, a diffusion atmosphere is controlled so as to oxidize or reduce a specified impurity to thereby control the diffusion coefficient of the impurities in the silicon oxide layer. Thus, it is possible to form a diffusion layer having a desired impurity profile under a good control.

摘要翻译： 在制造半导体器件时，当杂质从包含杂质的氧化硅层扩散到半导体层时，控制扩散气氛以氧化或减少特定杂质，从而控制氧化硅中杂质的扩散系数 层。 因此，可以在良好的控制下形成具有所需杂质分布的扩散层。

公开(公告)号：US4735824A

公开(公告)日：1988-04-05

申请号：US866310

申请日：1986-05-23

申请人： Kikuo Yamabe ,  Keitaro Imai

发明人： Kikuo Yamabe ,  Keitaro Imai

IPC分类号： H01L29/00 ,  H01L21/28 ,  H01L21/8242 ,  B05D5/12

CPC分类号： H01L21/28211 ,  H01L27/10861

摘要： A method of forming an MOS capacitor by the steps of cutting a groove in the surface of a silicon substrate by the RIE process, thermally oxidizing the surface of said silicon substrate, depositing a capacitor electrode on said capacitor-insulating layer, being characterized in that when the capacitor-insulating layer is deposited, the surface of the silicon substrate is thermally oxidized in an oxidizing atmosphere containing 15% by vol. of steam.

摘要翻译： 通过以下步骤形成MOS电容器的方法：通过RIE工艺在硅衬底的表面中切割沟槽，热氧化所述硅衬底的表面，在所述电容器绝缘层上沉积电容器电极，其特征在于， 当沉积电容器绝缘层时，硅衬底的表面在含有15体积％的氧化气氛中被热氧化。 的蒸汽。

公开(公告)号：US20100184267A1

公开(公告)日：2010-07-22

申请号：US12550788

申请日：2009-08-31

申请人： Yoshiro Kabe ,  Junichi Kitagawa ,  Kikuo Yamabe

发明人： Yoshiro Kabe ,  Junichi Kitagawa ,  Kikuo Yamabe

IPC分类号： H01L21/316 ,  H01L21/762

CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02337 ,  H01L21/31654 ,  H01L21/67115 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/7881 ,  H01L29/792

摘要： To form a good quality silicon oxide film provided with both a superior Qbd characteristic and Rd characteristic, a wafer W is loaded into a plasma treatment apparatus where the surface of a silicon layer 501 of the wafer W is treated by plasma oxidation to form on the silicon layer 501 to a film thickness T1 a silicon oxide film 503. Next, the wafer W on which the silicon oxide film 503 is formed is transferred to a thermal oxidation treatment apparatus where the silicon oxide film 503 is treated by thermal oxidation to thereby form a silicon oxide film 505 having a target film thickness T2.

摘要翻译： 为了形成具有优异的Qbd特性和Rd特性的优质氧化硅膜，将晶片W装载到等离子体处理装置中，其中通过等离子体氧化处理晶片W的硅层501的表面以形成在 硅层501形成膜厚T1，形成氧化硅膜503.接着，将形成有氧化硅膜503的晶片W转移到热氧化处理装置中，通过热氧化处理氧化硅膜503，形成 具有目标膜厚度T2的氧化硅膜505。

公开(公告)号：US06185472B2

公开(公告)日：2001-02-06

申请号：US08777189

申请日：1996-12-27

申请人： Shinji Onga ,  Takako Okada ,  Hiroshi Tomita ,  Kikuo Yamabe ,  Haruo Okano

发明人： Shinji Onga ,  Takako Okada ,  Hiroshi Tomita ,  Kikuo Yamabe ,  Haruo Okano

IPC分类号： G06F1900

CPC分类号： H01L22/20 ,  G06F17/5018

摘要： A semiconductor device manufacturing method capable of proceeding semiconductor device manufacturing processes according to predetermined schedules or while correcting them without testpieces is provided. The method includes the steps of collecting actually observed data during at least one of plural steps, obtaining prediction data in at least one of plural steps by using an ab initio molecular dynamics process simulator or a molecular dynamics simulator, comparing and verifying the prediction data and the actually observed data sequentially at real time, and correcting and processing the plural manufacturing process factors sequentially at real time if a difference in significance is recognized between set values for the plural manufacturing process factors and the plural manufacturing process factors estimated from the actually observed data according to comparison and verification.

摘要翻译： 提供一种能够根据预定时间表进行半导体器件制造工艺或在没有测试件的情况下对其进行校正的半导体器件制造方法。 该方法包括以下步骤：在多个步骤中的至少一个步骤中收集实际观察到的数据，通过使用从头分子动力学过程模拟器或分子动力学模拟器获得多个步骤中的至少一个步骤中的预测数据，比较和验证预测数据和 实际观察到的数据，并且如果在多个制造处理因子的设定值和从实际观测数据估计出的多个制造处理因子之间识别出显着性差异，则实时依次校正和处理多个制造工艺因素 根据比较和验证。

公开(公告)号：US5431561A

公开(公告)日：1995-07-11

申请号：US166014

申请日：1993-12-14

申请人： Kikuo Yamabe ,  Keitaro Imai ,  Katsuya Okumura ,  Ken Nakao ,  Seikou Ueno

发明人： Kikuo Yamabe ,  Keitaro Imai ,  Katsuya Okumura ,  Ken Nakao ,  Seikou Ueno

IPC分类号： H01L21/324 ,  C30B31/12 ,  C30B31/14 ,  H01L21/22 ,  H01L21/31 ,  H01L21/673 ,  H01L21/683 ,  F27D5/00

CPC分类号： C30B31/12 ,  C30B31/14

摘要： A method and an apparatus for heat treating in a heat treating apparatus having a heating chamber to be introduced with predetermined gas, a heater disposed around the heating chamber, and jigs disposed in the heating chamber for supporting wafers of a plurality of substrates to be treated in parallel with each other, wherein in order to make the temperature distribution of the wafers of the substrates to be treated in the radial direction uniform in the heat treatment, the jigs are formed to determine the sizes and the shape thereof in predetermined ranges having a gradient according to the heat treating method having a predetermined shape determining procedure so that the jigs are formed in ring-shaped trays (i.e. support-ring) for holding at the peripheries the substrates to be treated and the thickness of the tray is constant or such that the outer peripheral side thereof is thicker than the inner peripheral side thereof.

摘要翻译： 一种热处理装置中的热处理方法和装置，其特征在于，具有要加入预定气体的加热室，设置在所述加热室周围的加热器和设置在所述加热室中的夹具，用于支撑待处理的多个基板的晶片 彼此并联，其中为了使热处理中要处理的基板的晶片的温度分布均匀，形成夹具以确定其尺寸和形状，其具有在 根据具有预定形状确定步骤的热处理方法的梯度，使得夹具形成为环状托盘（即，支撑环），用于在周边保持要处理的基板，并且托盘的厚度等于或等于 其外周侧比其内周侧厚。