Abstract:
Disclosed herein is an electronic component that includes a substrate and a plurality of conductive layers and a plurality of insulating layers which are alternately laminated on the substrate. The side surface of at least one of the plurality of insulating layers has a recessed part set back from a side surface of the substrate and a projecting part projecting from the recessed part.
Abstract:
A thin film capacitor includes a capacitance portion in which a plurality of electrode layers and dielectric layers are alternately laminated, a cover layer, an insulating layer, a via hole in which one electrode layer different from an uppermost electrode layer among the plurality of electrode layers is exposed at a bottom surface thereof, and an opening which is provided inside the via hole and in which the one electrode layer is exposed at a bottom surface thereof, and in which the cover layer and the insulating layer are exposed at a side surface. The opening includes a first opening portion which passes through the insulating layer and a second opening portion which is provided below the first opening portion and passes through the cover layer, and when an inner diameter of the first opening portion is D1 and an inner diameter of the second opening portion is D2, D1>D2.
Abstract:
Disclosed herein is an LC filter that includes a conductive substrate, a first capacitive insulating film having one surface covered with the conductive substrate and other surface covered with a first capacitive electrode, a first inductor pattern having one end connected to the first capacitive electrode, a first terminal electrode connected to other end of the first inductor pattern, and a common terminal electrode connected to the conductive substrate.
Abstract:
An electronic component embedded substrate includes: a substrate that includes an insulating layer and has a first principal surface and a second principal surface; an electronic component that is embedded in the substrate and has at least one first terminal, at least one second terminal, and a capacity part; at least one via conductor that are formed in the insulating layer and electrically connected to the second terminal; and an adhesion layer that is in contact with the second terminal on an end face of the second terminal which are close to the second principal surface. The electronic component is laminated with the insulating layer, and adhesion strength between the adhesion layer and the insulating layer is higher than that between the second terminal and the insulating layer.
Abstract:
In a thin-film capacitor, an electrode terminal layer is divided into a plurality of parts by a penetration portion, and includes a frame portion as one divided part. The frame portion is disposed along an outer edge of the electrode terminal layer when viewed from the bottom surface side of the electrode terminal layer, and the frame portion can hinder deformation of the electrode terminal layer stretching or warping in a thickness direction or an in-plane direction, whereby such deformation can be prevented. Accordingly, in the thin-film capacitor, the electrode terminal layer is not likely to be deformed and an improvement in strength thereof is achieved.
Abstract:
A junction structure for electronic device having an excellent bonding strength is provided. A junction structure for electronic device in accordance with one aspect of the present invention includes a first metal layer containing nickel and a second metal layer containing gold, tin, and nickel, while the second metal layer includes an AuSn eutectic phase.
Abstract:
A through wiring substrate comprises a substrate having a pair of principal surfaces and a through hole penetrating between the pair of principal surfaces, the pair of principal surfaces and an inner surface of the through hole being electrically insulative; a through electrode provided on the inner surface of the through hole; a first wiring layer provided on one of the principal surfaces and connected to the through electrode; a second wiring layer provided on the other of the principal surfaces and connected to the through electrode; an underlying metal layer provided between the one of the principal surfaces and the first wiring layer; and catalyst metal particles existing between the underlying metal layer and the first wiring layer and between the through electrode and the inner surface of the through hole.
Abstract:
A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, formed in a region in the opening on the electrode so that an upper surface of the metal layer is at a position lower than an upper surface of the insulating covering layer in a peripheral edge portion of the opening; and a dome-shaped bump containing Sn and Ti, formed in a region in the opening on the under bump metal layer, wherein an end portion of a boundary between the under bump metal layer and the bump is in contact with an inner wall of the opening portion in the insulating covering layer.
Abstract:
A coating for a conductor, the coating having a layered structure of a palladium layer. The palladium layer has a crystal plane whose orientation rate is 65% or more, which means 65% or more of the crystal planes of the palladium layer are aligned to this crystal plane. Preferably the crystal plane whose orientation rate is 65% or more in the coating is the (111) plane or (200) plane.
Abstract:
The electronic device includes a terminal structure and a printed circuit board including the terminal structure. The terminal structure includes a solder-joint conductor region placed on a wiring conductor, an intermediate layer contacting with the conductor region, and a solder region contacting with the intermediate layer. The intermediate layer includes an intermetallic compound including tin and at least one of copper and nickel as principal components. When the indentation elastic modulus of the conductor region is E1 and the indentation elastic modulus of the intermediate layer is E2, the ratio of E1 to E2 is equal to or more than 0.8 and equal to or less than 1.5.