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    SYSTEMS AND METHODS OF LOCAL FOCUS ERROR COMPENSATION FOR SEMICONDUCTOR PROCESSES
    11.
    发明申请
    SYSTEMS AND METHODS OF LOCAL FOCUS ERROR COMPENSATION FOR SEMICONDUCTOR PROCESSES 有权
    用于半导体工艺的局部焦点误差补偿的系统和方法

    公开(公告)号：US20140127836A1

    公开(公告)日：2014-05-08

    申请号：US13671581

    申请日：2012-11-08

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Chia-Hao HSU ,  Pei-Cheng Hsu ,  Chia-Ching Huang ,  Chih-Ming Chen ,  Chia-Chen Chen

    IPC分类号： H01L21/66 ,  H01L21/02

    CPC分类号： H01L22/12 ,  G03F1/00 ,  G06F17/5068 ,  H01L21/02697 ,  H01L21/31144 ,  H01L21/32051 ,  H01L21/3212 ,  H01L21/32133

    摘要： A system and method of compensating for local focus errors in a semiconductor process. The method includes providing a reticle and applying, at a first portion of the reticle, a step height based on an estimated local focus error for a first portion of a wafer corresponding to the first portion of the reticle. A multilayer coating is formed over the reticle and an absorber layer is formed over the multilayer coating. A photoresist is formed over the absorber layer. The photoresist is patterned, an etch is performed of the absorber layer and residual photoresist is removed.

    摘要翻译： 一种在半导体工艺中补偿局部焦点误差的系统和方法。 该方法包括提供掩模版并且在掩模版的第一部分处施加基于与掩模版的第一部分对应的晶片的第一部分的估计局部聚焦误差的台阶高度。 在掩模版上形成多层涂层，并在多层涂层上形成吸收层。 在吸收层上形成光致抗蚀剂。 对光致抗蚀剂进行图案化，对吸收层进行蚀刻并除去残留的光致抗蚀剂。

    Wavefront adjustment in extreme ultra-violet (EUV) lithography
    14.
    发明授权
    Wavefront adjustment in extreme ultra-violet (EUV) lithography 有权
    极紫外（EUV）光刻技术的波前调整

    公开(公告)号：US09476764B2

    公开(公告)日：2016-10-25

    申请号：US14022355

    申请日：2013-09-10

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chia-Ching Huang ,  Chia-Hao Hsu ,  Tzu-Hsiang Chen ,  Chia-Chen Chen

    IPC分类号： G01J1/42 ,  G02F1/29 ,  G02B5/08 ,  G02B27/00 ,  G02F1/21

    CPC分类号： G01J1/429 ,  G02B5/0816 ,  G02B27/0068 ,  G02F1/21 ,  G02F1/29 ,  G02F2203/24

    摘要： Some embodiments of the present disclosure related to a method to form and operate the reflective surface to compensate for aberration effects on pattern uniformity. In some embodiments, the reflective surface comprises a mirror of within reduction optics of an EUV illumination tool. In some embodiments, the reflective surface comprises a reflective reticle. An EUV reflective surface topography comprising a reflective surface is disposed on a surface of a substrate, and is manipulated by mechanical force or thermal deformation. The substrate includes a plurality of cavities, where each cavity is coupled to a deformation element configured to expand a volume of the cavity and consequently deform a portion of the reflective surface above each cavity, for local control of the reflective surface through thermal deformation of a resistive material subject to an electric current, or mechanical deformation due to pressurized gas within the cavity or a piezoelectric effect.

    摘要翻译： 本公开的一些实施例涉及形成和操作反射表面以补偿对图案均匀性的像差影响的方法。 在一些实施例中，反射表面包括EUV照明工具的还原光学器件内的反射镜。 在一些实施例中，反射表面包括反射光罩。 包括反射表面的EUV反射表面形貌设置在基板的表面上，并且通过机械力或热变形来操纵。 衬底包括多个空腔，其中每个空腔耦合到变形元件，该变形元件被配置为膨胀空腔的体积，并因此使反射表面的一部分在每个空腔之上变形，以便通过热变形来对反射表面进行局部控制 受到电流的电阻材料或由腔内的加压气体引起的机械变形或压电效应。

    Method of overlay in extreme ultra-violet (EUV) lithography
    15.
    发明授权
    Method of overlay in extreme ultra-violet (EUV) lithography 有权
    在极紫外（EUV）光刻中覆盖的方法

    公开(公告)号：US09405204B2

    公开(公告)日：2016-08-02

    申请号：US14029844

    申请日：2013-09-18

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chia-Ching Huang ,  Chia-Hao Hsu ,  Chia-Chen Chen

    IPC分类号： G03B27/58 ,  G03F7/20 ,  H01L21/683

    CPC分类号： G03F7/70708 ,  C23C16/042 ,  C23C16/34 ,  C23C16/56 ,  G03F7/70633 ,  G03F7/70783 ,  H01L21/6833 ,  Y10T29/49155

    摘要： Some embodiments of the present disclosure relate to a method of overlay control which utilizes a deformable electrostatic chuck. The method comprises exposing a substrate to radiation which is reflected off of a reticle. The reticle is mounted to a deformable electrostatic chuck by a plurality of raised contacts, where each raised contact is configured to independently vary in height from a surface of the deformable electrostatic chuck. After exposure of the substrate to radiation which is reflected off of the reticle, a displacement between a first alignment shape formed on a first layer disposed on a surface of the substrate and a second alignment shape formed by the exposure is measured. The height of one or more of the plurality of raised contact is changed based upon the displacement to alter a surface topology of the reticle, which negates some effects of clamping topology. Other embodiments are also disclosed.

    摘要翻译： 本公开的一些实施例涉及利用可变形静电卡盘的覆盖控制的方法。 该方法包括将衬底暴露于从掩模版反射的辐射。 通过多个凸起的触点将掩模版安装到可变形的静电卡盘上，其中每个凸起的触点构造成独立地从可变形的静电卡盘的表面改变高度。 在将衬底暴露于从掩模版反射的辐射之后，测量形成在设置在衬底表面上的第一层上形成的第一对准形状与通过曝光形成的第二取向形状之间的位移。 基于位移改变多个凸起接触中的一个或多个的高度，以改变掩模版的表面拓扑，这消除了钳位拓扑的一些影响。 还公开了其他实施例。

    TOOL CONFIGURATION AND METHOD FOR EXTREME ULTRA-VIOLET (EUV) PATTERNING WITH A DEFORMABLE REFLECTIVE SURFACE
    16.
    发明申请
    TOOL CONFIGURATION AND METHOD FOR EXTREME ULTRA-VIOLET (EUV) PATTERNING WITH A DEFORMABLE REFLECTIVE SURFACE 有权
    具有可反射反射面的极端超紫外线（EUV）工具配置和方法

    公开(公告)号：US20150104745A1

    公开(公告)日：2015-04-16

    申请号：US14051683

    申请日：2013-10-11

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chia-Ching Huang ,  Tzu-Hsiang Chen ,  Chia-Hao Hsu ,  Chia-Chen Chen

    IPC分类号： G03F7/20 ,  G01N21/956

    CPC分类号： G03F7/20 ,  G03F7/70191 ,  G03F7/70266 ,  G03F7/70291 ,  G03F7/70633 ,  G03F7/70783

    摘要： Some embodiments of the present disclosure relates to a tool configuration and method for EUV patterning with a deformable reflective surface comprising a mirror or reticle. A radiation source provides EUV radiation which is reflected off the deformable reflective surface to transfer a reticle pattern a semiconductor workpiece. A metrology tool measures a residual vector formed between a first shape of the semiconductor workpiece and a second shape of the reticle pattern. And, a topology of the deformable reflective surface is changed based upon the residual vector to minimize a total magnitude of the residual vector.

    摘要翻译： 本公开的一些实施例涉及用于EUV图案化的工具配置和方法，其具有包括反射镜或掩模版的可变形反射表面。 辐射源提供EUV辐射，其从可变形反射表面反射以将掩模版图案转移到半导体工件。 测量工具测量形成在半导体工件的第一形状和标线图案的第二形状之间的残余矢量。 并且，基于残差向量来改变可变形反射表面的拓扑，以最小化残差向量的总大小。

    ROTARY EUV COLLECTOR
    17.
    发明申请
    ROTARY EUV COLLECTOR 有权
    旋转EUV收集器

    公开(公告)号：US20150085264A1

    公开(公告)日：2015-03-26

    申请号：US14035268

    申请日：2013-09-24

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd

    发明人： Shang-Chieh Chien ,  Shu-Hao Chang ,  Jui-Ching Wu ,  Tsung-Yu Chen ,  Tzu-Hsiang Chen ,  Ming-Chin Chien ,  Chia-Chen Chen ,  Jeng-Horng Chen

    IPC分类号： G03F7/20

    CPC分类号： G03F7/7015 ,  G02B5/0891 ,  G02B7/1821 ,  G03F7/2008 ,  G03F7/2037 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70916 ,  G03F7/70925 ,  G21K1/067

    摘要： An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

    摘要翻译： EUV收集器在EUV光刻系统的操作期间或之间旋转。 旋转EUV收集器导致污染物更均匀地分布在收集器的表面上。 这降低了EUV光刻系统随着污染增加而失去图像保真度并从而增加了集电器寿命的速率。 在EUV光刻系统运行期间旋转收集器可以引起对流并降低污染率。 通过以足够的速度旋转收集器，可以通过离心力的作用去除一些污染的碎屑。

    Exhaust system with u-shaped pipes
    18.
    发明授权
    Exhaust system with u-shaped pipes 有权

    公开(公告)号：US10983447B2

    公开(公告)日：2021-04-20

    申请号：US15704549

    申请日：2017-09-14

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Yu-Fu Lin ,  Shih-Chang Shih ,  Chia-Chen Chen

    IPC分类号： B01D53/04 ,  G03F7/20 ,  C23C16/44 ,  B01D53/30

    摘要： The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.