Semiconductor device
    11.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US20060209517A1

    公开(公告)日:2006-09-21

    申请号:US11375134

    申请日:2006-03-15

    申请人: Takashi Yui

    发明人: Takashi Yui

    IPC分类号: H05K7/20

    摘要: A semiconductor device having a wiring substrate, a semiconductor element mounted on the wiring substrate via a heat sink, a wire electrically connecting the wiring substrate and the semiconductor element, the wiring substrate having through holes each connected to the wire or the heat sink, and external electrodes formed on a back surface of the wiring substrate and connected to the through holes. An insulating layer is formed between the heat sink and the semiconductor element, and the heat sink is divided into at least two sections. Hence, the back surface of the semiconductor element maintains an electrically disconnected state irrespective of the potential of the heat sink, and the heat dissipation design is allowed greater flexibility. Thus, the external electrodes connected to the heat sink via the through holes are connected to the mounting substrate wirings having satisfactory heat dissipation efficiency, allowing the heat of the semiconductor element to escape efficiently.

    摘要翻译: 一种具有布线基板的半导体器件,经由散热器安装在布线基板上的半导体元件,将布线基板与半导体元件电连接的布线,具有各自与导线或散热片连接的通孔的布线基板,以及 外部电极形成在布线基板的背面并与通孔连接。 在散热片和半导体元件之间形成绝缘层,将散热片分成至少两个部分。 因此,与散热器的电位无关地,半导体元件的背面保持电断开状态,并且允许散热设计更大的灵活性。 因此,通过通孔连接到散热器的外部电极与具有令人满意的散热效率的安装基板布线连接,从而使半导体元件的热量有效地逸出。

    SEMICONDUCTOR WAFER, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE
    14.
    发明申请
    SEMICONDUCTOR WAFER, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE 有权
    半导体器件,其制造方法和半导体器件

    公开(公告)号:US20080135975A1

    公开(公告)日:2008-06-12

    申请号:US11951441

    申请日:2007-12-06

    IPC分类号: H01L27/00 H01L21/82

    CPC分类号: H01L21/78

    摘要: A modified layer 5 and an altered layer 8 are formed outside a dicing point of a dicing area 3. Thus without forming another interface between different physical properties on the dicing point, it is possible to prevent chipping from progressing along a crystal orientation from an interface between a semiconductor element 2 and a semiconductor substrate 1 and from a surface of the semiconductor element during dicing, thereby suppressing the development of chipping to the semiconductor element.

    摘要翻译: 在切割区域3的切割点的外部形成改质层5和改质层8。 因此,在切割点之间不形成不同物理特性之间的另一界面,可以防止在切割期间从半导体元件2和半导体基板1之间的界面以及半导体元件的表面沿着晶体取向进行切屑, 从而抑制了对半导体元件的切屑的发展。

    Apparatus and method for detecting abnormality of imbalance of air-fuel ratios among cylinders
    20.
    发明授权
    Apparatus and method for detecting abnormality of imbalance of air-fuel ratios among cylinders 有权
    检测气缸间空燃比不平衡异常的装置及方法

    公开(公告)号:US08833150B2

    公开(公告)日:2014-09-16

    申请号:US13687910

    申请日:2012-11-28

    IPC分类号: G01M15/10 G01M15/04

    CPC分类号: G01M15/042 Y02T10/40

    摘要: A detecting apparatus that detects an abnormality of imbalance of air-fuel ratios among cylinders of a multi-cylinder internal combustion engine, which is equipped with a variable working angle mechanism of an intake valve, the detecting apparatus includes an abnormality detection portion that detects a parameter regarding rotational fluctuations of each of the cylinders and detects whether or not there is an abnormality of imbalance of air-fuel ratios among the cylinders. The abnormality detection portion refrains from determining that the air-fuel ratios are normal when the working angle at the time of detection of the parameter is within a predetermined large working angle range, and determines that the air-fuel ratios are normal when the working angle at the time of detection of the parameter is within a predetermined small working angle range that is on a small working angle side with respect to the large working angle range.

    摘要翻译: 一种检测装置,其检测配备有进气门的可变作用角机构的多缸内燃机的气缸之间的空燃比的不平衡的异常的检测装置,所述检测装置包括:异常检测部,其检测 参数关于每个气缸的旋转波动,并且检测气缸之间是否存在空燃比不平衡的异常。 当检测到参数时的工作角度在预定的大的工作角度范围内时,异常检测部分不能确定空燃比是正常的,并且当工作角度 在检测到参数的时候,在相对于大的作业角度范围处于小的加工角度侧的规定的小的工作角度范围内。