公开(公告)号：US06569704B1

公开(公告)日：2003-05-27

申请号：US09717647

申请日：2000-11-21

申请人： Tetsuya Takeuchi ,  Norihide Yamada ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Tetsuya Takeuchi ,  Norihide Yamada ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01L2118

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/343 ,  H01S5/34333

摘要： An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well layer when the quantum layer is grown. In the present invention, the strained quantum well layer is grown with an orientation at which the piezoelectric field is less than the maximum value of the piezoelectric field strength as a function of the orientation. In devices having GaN-based semiconductor layers with a wurtzite crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {0001} direction of the wurtzite crystal structure. In devices having GaN-based semiconductor layers with a zincblende crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {111} direction of the zincblende crystal structure. In the preferred embodiment of the present invention, the growth orientation is chosen to minimize the piezoelectric field in the strained quantum well layer.

摘要翻译： 一种具有多个GaN基半导体层的光半导体器件，其含有应变量子阱层，其中应变量子阱层具有取决于量子层生长时应变量子阱层的取向的压电场。 在本发明中，应变量子阱层以压电场小于压电场强度的最大值作为取向的方向生长。 在具有纤锌矿晶体结构的GaN基半导体层的器件中，应变量子阱层的生长方向从纤锌矿晶体结构的{0001}方向倾斜至少1°。 在具有锌辉石晶体结构的GaN基半导体层的器件中，应变量子阱层的生长取向从闪锌矿晶体结构的{111}方向倾斜至少1°。 在本发明的优选实施例中，选择生长方向以最小化应变量子阱层中的压电场。

公开(公告)号：US06451478B1

公开(公告)日：2002-09-17

申请号：US09530557

申请日：2000-05-22

申请人： Mitsugu Okahisa ,  Susumu Yamanaka ,  Toshihiko Ikehata ,  Kaoru Murakami ,  Masaaki Kaneda ,  Tetsuya Takeuchi

发明人： Mitsugu Okahisa ,  Susumu Yamanaka ,  Toshihiko Ikehata ,  Kaoru Murakami ,  Masaaki Kaneda ,  Tetsuya Takeuchi

IPC分类号： H01M1004

CPC分类号： H01M2/0222 ,  H01M2/0413 ,  H01M2/08

摘要： A gasket-integrated case is obtained by punching out a circular piece from a metal sheet on which a gasket resin film having a round hole is integrally laminated with an adhesive, in such a way as to have a diameter concentric with, but larger than, the round hole, and by drawing the circular piece into a bottomed cylindrical shape. Elements for electromotive force and a sealing plate are then disposed on the case, and the periphery of the sealing plate is sandwiched and sealed by the periphery of the case by crimping, with a gasket including the resin film interposed therebetween, so that a coin-shaped battery is formed. The resin film has a thickness in the range of 20 &mgr;m to 150 &mgr;m and a modulus of elasticity equal to or greater than 35 kgf/mm2.

摘要翻译： 通过从具有圆孔的垫圈树脂膜与粘合剂一体地层叠的金属板上冲压圆形件而获得垫圈一体的壳体，使得其直径与直径同心但大于 圆孔，并将圆形件拉成有底圆筒形。 然后将电动元件和密封板设置在壳体上，并且利用包括树脂膜的垫圈将密封板的周边通过卷边夹住并密封壳体的周边， 形成电池。 树脂膜的厚度在20〜150μm的范围内，弹性模量等于或大于35kgf / mm2。

公开(公告)号：US6131647A

公开(公告)日：2000-10-17

申请号：US140198

申请日：1998-08-26

申请人： Yukinori Suzuki ,  Tetsuya Takeuchi ,  Kouji Kishita

发明人： Yukinori Suzuki ,  Tetsuya Takeuchi ,  Kouji Kishita

IPC分类号： F28D15/02 ,  H05K7/20 ,  F28D15/00 ,  A23C3/02

CPC分类号： H05K7/20609 ,  F28D15/0266

摘要： In a cooling system to cool down a hot object contained in a closed container, a heat exchanger is used in addition to an air-conditioner to share thermal load to dissipate heat generated by the hot object. Since the heat exchanger which requires almost no operating power shares heat load with the air-conditioner which consumes a high operating power, a total power consumption of the cooling system is considerably reduced. An evaporator and a condenser of the heat exchanger are separately installed in the cooling system, and both are connected by pipes through which refrigerant is circulated. The evaporator is placed to an optimum position to effectively absorb heat generated by the hot object. The condenser is installed outside the container to exhaust heat most effectively to outside air. The evaporator and the condenser may be combined before installation, if a whole structure of the cooling system permits. The heat generated by the hot object is led directly to the evaporator to enhance heat exchange efficiency.

摘要翻译： 在用于冷却包含在密闭容器中的热物体的冷却系统中，除了空调之外还使用热交换器来共享热负荷以散发由热物体产生的热量。 由于几乎没有操作功率的热交换器与消耗高功率功率的空调共享热负荷，因此大大降低了冷却系统的总功耗。 热交换器的蒸发器和冷凝器分别安装在冷却系统中，两者都通过制冷剂循环的管道连接。 将蒸发器置于最佳位置以有效吸收由热物体产生的热量。 冷凝器安装在容器外面，最有效地将热量排放到外部空气中。 如果冷却系统的整个结构允许，则在安装之前可以组合蒸发器和冷凝器。 由热物体产生的热量直接引导到蒸发器以提高热交换效率。

公开(公告)号：US5239188A

公开(公告)日：1993-08-24

申请号：US971208

申请日：1992-11-04

申请人： Tetsuya Takeuchi ,  Hiroshi Amano ,  Isamu Akasaki ,  Atsushi Watanabe ,  Katsuhide Manabe

发明人： Tetsuya Takeuchi ,  Hiroshi Amano ,  Isamu Akasaki ,  Atsushi Watanabe ,  Katsuhide Manabe

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L29/20 ,  H01L29/201 ,  H01L33/00 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01S5/02 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/201 ,  H01L33/007 ,  H01L29/2003 ,  Y10S148/065 ,  Y10S148/113 ,  Y10S438/933

摘要： Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400 to 1300.degree. C. and is held in the atmosphere where a metaloganic compound containing at least aluminum and a nitrogen-containing compound are present to form a thin intermediate layer containing at least aluminum and nitrogen on a part or the entirety of the surface of the single crystal substrate, and then at least one layer or multiple layers of a single crystal of (Ga.sub.l- x Al.sub.x).sub.l-y In.sub.y N are formed on the intermediate layer.

公开(公告)号：US08545648B2

公开(公告)日：2013-10-01

申请号：US13598036

申请日：2012-08-29

申请人： Hiroki Inagaki ,  Tetsuya Takeuchi ,  Tetsuji Narasaki ,  Masataka Inuzuka ,  Osamu Goto

发明人： Hiroki Inagaki ,  Tetsuya Takeuchi ,  Tetsuji Narasaki ,  Masataka Inuzuka ,  Osamu Goto

IPC分类号： B29C71/00

CPC分类号： B32B17/10036 ,  B32B17/10229 ,  B32B17/10761 ,  G02B5/282 ,  G02B2207/109 ,  Y10T156/10 ,  Y10T156/1082 ,  Y10T428/24479 ,  Y10T428/24612 ,  Y10T428/31678 ,  B32B17/10 ,  B32B2367/00

摘要： Disclosed is a method for producing a heat insulating laminate structure having an excellent solar radiation shielding capability as well as an excellent radio wave transparency. The method includes placing a transparent laminate film between two transparent substrates, the transparent laminate film having on at least one side of a transparent polymer film a laminated layer structure in which a metal oxide layer containing an organic component and a metal layer are laminated and grooves having widths of 30 μm or less are formed with dividing the metal layer; bonding the two substrates to each other through the transparent laminate film under application of a pressure; and promoting division of the metal layer in the transparent laminate film by the applied pressure to increase an overall surface resistance.

摘要翻译： 公开了一种具有优异的太阳辐射屏蔽能力以及优异的无线电波透明度的隔热叠层结构体的制造方法。 该方法包括将透明层压膜放置在两个透明基板之间，所述透明层压膜在透明聚合物膜的至少一侧具有层压层结构，其中层压包含有机成分和金属层的金属氧化物层， 通过分割金属层形成宽度为30μm以下的宽度; 在施加压力下通过透明层压膜将两个基板彼此粘合; 并且通过施加的压力促进透明层压膜中的金属层的分离，以增加整个表面电阻。

公开(公告)号：US08416824B2

公开(公告)日：2013-04-09

申请号：US13321438

申请日：2010-07-02

申请人： Tetsuya Takeuchi ,  Yoshinobu Sekiguchi

发明人： Tetsuya Takeuchi ,  Yoshinobu Sekiguchi

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  H01S5/18383

摘要： A surface emitting laser is provided which can control a beam shape and can provide higher efficiency and higher power. The surface emitting laser includes a gain region that is provided between a first semiconductor multilayer film reflection mirror and a second semiconductor multilayer film reflection mirror, which are arranged so as to oppose to each other, and that has a first active layer and a second active layer. The surface emitting laser has a current constriction layer for constricting an electric current which is injected into the first active layer and the second active layer. The first active layer and the second active layer have different active layer structures from each other.

摘要翻译： 提供了可以控制光束形状并且可以提供更高效率和更高功率的表面发射激光器。 表面发射激光器包括设置在彼此相对布置的第一半导体多层膜反射镜和第二半导体多层膜反射镜之间的增益区域，并且具有第一有源层和第二有源层 层。 表面发射激光器具有用于收缩注入第一有源层和第二有源层的电流的电流收缩层。 第一有源层和第二有源层具有彼此不同的有源层结构。

公开(公告)号：US08228965B2

公开(公告)日：2012-07-24

申请号：US13039400

申请日：2011-03-03

申请人： Tetsuya Takeuchi

发明人： Tetsuya Takeuchi

IPC分类号： H01S5/00

CPC分类号： H01S5/18391 ,  B82Y20/00 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/18372 ,  H01S5/2022 ,  H01S5/34326

摘要： A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.

摘要翻译： 一种表面发射激光器，其通过在基板上层叠下反射镜，有源层和上反射镜而构成，其包括在上反射镜的发光部中，用于控制由 低反射率区域和凹入的高反射率区域，形成在低反射率区域的中心部分，并且以波长λ振荡，其中上反射镜由多层膜反射镜构成，基于由 层叠多个层，多层膜反射镜包括在多层膜反射镜的发光周边部分中具有λ/ 8〜3λ/ 8范围内的光学厚度的相位调整层，以及吸收层 在相位调整层中提供带 - 带吸收。

公开(公告)号：US20110026555A1

公开(公告)日：2011-02-03

申请号：US12837345

申请日：2010-07-15

申请人： Tetsuya Takeuchi

发明人： Tetsuya Takeuchi

IPC分类号： H01S5/18 ,  H01S5/323

CPC分类号： H01S5/18311 ,  B82Y20/00 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173

摘要： A surface emitting laser includes a pair of multilayer mirrors disposed opposing to each other, and an active layer disposed between the multilayer mirrors. In at least one multilayer mirror of the pair of multilayer mirrors, a plurality of first pair layers are stacked, each first pair layer is formed from a high-refractive index layer having a first strain and a low-refractive index layer having a second strain; and a second pair layer is included, the second pair layer is formed of one of the high-refractive index layer and the low-refractive index layer of the first pair layer in which one of the high-refractive index layer and the low-refractive index layer of the first pair layer is replaced with a layer formed from a quaternary or higher mixed crystal semiconductor material having a third strain.

摘要翻译： 表面发射激光器包括彼此相对设置的一对多层反射镜，以及设置在多层反射镜之间的有源层。 在一对多层反射镜的至少一个多层反射镜中，堆叠多个第一对层，每个第一对层由具有第一应变的高折射率层和具有第二应变的低折射率层形成 ; 并且包括第二对层，第二对层由第一对层的高折射率层和低折射率层之一形成，其中高折射率层和低折射率层之一 第一对层的折射率层被由具有第三应变的四元或更高的混合晶体半导体材料形成的层替代。

公开(公告)号：US07756187B2

公开(公告)日：2010-07-13

申请号：US11782221

申请日：2007-07-24

申请人： Tetsuya Takeuchi

发明人： Tetsuya Takeuchi

IPC分类号： H01S3/08

CPC分类号： H01S5/18369 ,  B82Y20/00 ,  H01L33/105 ,  H01S5/10 ,  H01S5/18358 ,  H01S5/3201 ,  H01S5/34306 ,  H01S5/34333 ,  H01S5/3436

摘要： Provided are an optical device including a multilayer reflector having a layer whose optical thickness is not λ/4, and a vertical cavity surface emitting laser using the optical device. A resonance frequency shift or a reduction in reflectivity which is caused by a deviation from an optical thickness of λ/4 can be suppressed to improve characteristics and yield. The optical device for generating light of a wavelength λ includes a reflector and an active layer. The reflector is a semiconductor multilayer reflector including a first layer and a second layer which are alternatively laminated and have different refractive indices. The first layer has an optical thickness smaller than λ/4. The second layer has an optical thickness larger than λ/4. The interface between the first layer and the second layer is located at neither a node nor an antinode of an optical intensity distribution within the reflector.

摘要翻译： 提供了一种包括具有光学厚度不是λ/ 4的层的多层反射器的光学器件和使用该光学器件的垂直腔表面发射激光器。 可以抑制由与λ/ 4的光学厚度的偏差引起的共振频率偏移或反射率的降低，从而改善特性和产率。 用于产生波长λ的光的光学装置包括反射器和有源层。 反射器是包括交替层叠并具有不同折射率的第一层和第二层的半导体多层反射器。 第一层的光学厚度小于λ/ 4。 第二层的光学厚度大于λ/ 4。 第一层和第二层之间的界面不在反射器内的光强度分布的节点和波腹处。

公开(公告)号：US20100029030A1

公开(公告)日：2010-02-04

申请号：US12509551

申请日：2009-07-27

申请人： Tatsuro Uchida ,  Mitsuhiro Ikuta ,  Tetsuya Takeuchi

发明人： Tatsuro Uchida ,  Mitsuhiro Ikuta ,  Tetsuya Takeuchi

IPC分类号： H01L21/00

CPC分类号： H01S5/423 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/209 ,  H01S5/34326 ,  H01S2301/166

摘要： Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.

摘要翻译： 提供一种制造表面发射激光器的方法，该表面发射激光器包括设置在层叠半导体层上的表面浮雕结构，包括以下步骤：向第一电介质膜转移用于限定台面结构的第一图案和用于限定表面浮雕的第二图案 结构在同一过程中; 以及在所述第一电介质膜上形成第二电介质膜和在所述第一图案和所述第二图案转印到所述层叠半导体层的表面上。 因此，表面浮雕结构的中心位置可以高精度地与电流限制结构的中心位置对准。