公开(公告)号：US5239188A

公开(公告)日：1993-08-24

申请号：US971208

申请日：1992-11-04

申请人： Tetsuya Takeuchi ,  Hiroshi Amano ,  Isamu Akasaki ,  Atsushi Watanabe ,  Katsuhide Manabe

发明人： Tetsuya Takeuchi ,  Hiroshi Amano ,  Isamu Akasaki ,  Atsushi Watanabe ,  Katsuhide Manabe

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L29/20 ,  H01L29/201 ,  H01L33/00 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01S5/02 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/201 ,  H01L33/007 ,  H01L29/2003 ,  Y10S148/065 ,  Y10S148/113 ,  Y10S438/933

摘要： Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400 to 1300.degree. C. and is held in the atmosphere where a metaloganic compound containing at least aluminum and a nitrogen-containing compound are present to form a thin intermediate layer containing at least aluminum and nitrogen on a part or the entirety of the surface of the single crystal substrate, and then at least one layer or multiple layers of a single crystal of (Ga.sub.l- x Al.sub.x).sub.l-y In.sub.y N are formed on the intermediate layer.

公开(公告)号：US5389571A

公开(公告)日：1995-02-14

申请号：US46960

申请日：1993-04-16

申请人： Tetsuya Takeuchi ,  Hiroshi Amano ,  Isamu Akasaki ,  Atsushi Watanabe ,  Katsuhide Manabe

发明人： Tetsuya Takeuchi ,  Hiroshi Amano ,  Isamu Akasaki ,  Atsushi Watanabe ,  Katsuhide Manabe

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L29/20 ,  H01L29/201 ,  H01L33/00 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01S5/02 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/201 ,  H01L33/007 ,  H01L29/2003 ,  Y10S148/065 ,  Y10S148/113 ,  Y10S438/933

摘要： Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N (0.ltoreq.x.gtoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400.degree. to 1300.degree. C. and is held in the atmosphere where a metaloganic compound containing at least aluminum and a nitrogen-containing compound are present to form a thin intermediate layer containing at least aluminum and nitrogen on a part or the entirety of the surface of the single crystal substrate, and then at least one layer or multiple layers of a single crystal of (Ga.sub.1-x Al.sub.x).sub. 1-y In.sub.y N are formed on the intermediate layer.

摘要翻译： 公开了具有（Ga1-xAlx）1-yInyN的单晶的氮化镓型半导体器件及其制造方法，其抑制晶体缺陷的发生，因此具有非常高的结晶度和相当优异的平坦度。 氮化镓型半导体器件包括硅衬底，由至少包含铝和氮并且形成在硅衬底上的化合物组成的中间层和（Ga1-xAlx）1-yInyN（0≤x≤1）的晶体层 > / = 1，0

公开(公告)号：US5834326A

公开(公告)日：1998-11-10

申请号：US763779

申请日：1996-12-11

申请人： Mamoru Miyachi ,  Toshiyuki Tanaka ,  Yoshinori Kimura ,  Hirokazu Takahashi ,  Hitoshi Sato ,  Atsushi Watanabe ,  Hiroyuki Ota ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Mamoru Miyachi ,  Toshiyuki Tanaka ,  Yoshinori Kimura ,  Hirokazu Takahashi ,  Hitoshi Sato ,  Atsushi Watanabe ,  Hiroyuki Ota ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01S5/00 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/325 ,  Y10S148/065 ,  Y10S148/113

摘要： A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.

摘要翻译： 一种用于制造半导体具有晶体层（的AlxGa1-x）的1-yInyN（0

公开(公告)号：US5370738A

公开(公告)日：1994-12-06

申请号：US12780

申请日：1993-02-03

申请人： Atsushi Watanabe ,  Hiroshi Amano ,  Kazumasa Hiramatsu ,  Isamu Akasaki

发明人： Atsushi Watanabe ,  Hiroshi Amano ,  Kazumasa Hiramatsu ,  Isamu Akasaki

IPC分类号： H01L21/205 ,  C23C16/455 ,  C30B25/14 ,  C23C16/00

CPC分类号： C30B25/14 ,  C23C16/455

摘要： A compound semiconductor vapor phase epitaxial device comprises a cylindrical reactor vessel, a plurality of flow channels disposed in the reactor vessel, a crystal substrate disposed in one of the flow channels, a plurality of gas supply pipes for respectively supplying gas containing element of compound to be grown on the crystal substrate and at least one slit or linearly arranged fine holes communicating adjacent two flow channels so as to extend in a direction normal to a direction of the gas flow to form a laminate layer flow consisting of two or more than two gases at an upstream portion of location of the crystal substrate.

摘要翻译： 化合物半导体气相外延装置包括圆柱形反应器容器，设置在反应器容器中的多个流动通道，设置在一个流动通道中的晶体基板，多个气体供应管道，用于将含有化合物的气体分别供应到 在晶体基板上生长至少一个狭缝或线性布置的细孔，其连通相邻的两个流动通道，以沿着与气流方向垂直的方向延伸，以形成由两个或多于两个气体组成的层压层流 在晶体基板的位置的上游部分。

公开(公告)号：US09163110B2

公开(公告)日：2015-10-20

申请号：US12671127

申请日：2007-08-13

申请人： Atsushi Watanabe ,  Yoshihiro Takebayashi ,  Toshiro Otsubo

发明人： Atsushi Watanabe ,  Yoshihiro Takebayashi ,  Toshiro Otsubo

IPC分类号： C05G3/00 ,  C05G5/00 ,  C08G18/76 ,  A01N25/26 ,  C08G18/66

CPC分类号： C08G18/664 ,  C05G3/0029 ,  C08G18/76

摘要： A coated granule is obtained by coating a bioactive substance-containing granule with a urethane resin obtained by reaction of an aromatic diisocyanate with a polyol mixture containing a polyesterpolyol and a C2-C8 polymethylene glycol, wherein the molar ratio of the polyesterpolyol to the polymethylene glycol is 1:20 to 20:1. The granule is capable of controlling elution of the bioactive substance appropriately, and the urethane resin forming the coating film shows degradability in soil.

摘要翻译： 通过用芳族二异氰酸酯与含有聚酯多元醇和C 2 -C 8聚亚甲基二醇的多元醇混合物反应获得的聚氨酯树脂涂布含生物活性物质的颗粒，得到包衣颗粒，其中聚酯多元醇与聚亚甲基二醇的摩尔比 是1:20至20：1。 该颗粒能够适当地控制生物活性物质的洗脱，形成涂膜的聚氨酯树脂在土壤中显示出降解性。

公开(公告)号：US08911685B2

公开(公告)日：2014-12-16

申请号：US13147633

申请日：2010-02-03

申请人： Atsushi Watanabe ,  Shigeki Matsubara ,  Teruhiro Yamano

发明人： Atsushi Watanabe ,  Shigeki Matsubara ,  Teruhiro Yamano

IPC分类号： G01N35/00 ,  G01N35/02 ,  G01N35/10 ,  G01F23/00 ,  G01F23/26 ,  G01N35/04

CPC分类号： G01N35/025 ,  G01F23/00 ,  G01F23/263 ,  G01N35/1002 ,  G01N35/1009 ,  G01N2035/00673 ,  G01N2035/0443 ,  G01N2035/1025

摘要： Disclosed is an automated analyzer intended for qualitative/quantitative analysis of blood, urine, and other biological samples, and including a reagent disk for mounting a plurality of reagent containers thereon, wherein any errors in liquid-level measurement due to oscillation of a reagent liquid surface during rotation of the reagent disk are minimized, even when reagent containers of a large capacity are mounted. If a predetermined constant cycle time is defined as one unit, the reagent disk with reagent containers mounted thereon is transported to a liquid-level detection position using at least two units when a liquid level of a reagent is measured.

摘要翻译： 公开了一种用于血液，尿液和其他生物样品的定性/定量分析的自动分析装置，包括用于在其上安装多个试剂容器的试剂盘，其中由于试剂液体的振荡而导致的液位测量中的任何误差 即使安装了大容量的试剂容器，试剂盘旋转期间的表面也被最小化。 如果将预定的恒定循环时间定义为一个单位，则当测量试剂的液位时，将其上安装有试剂容器的试剂盘转移到液位检测位置，使用至少两个单位。

公开(公告)号：US08875651B2

公开(公告)日：2014-11-04

申请号：US13381322

申请日：2010-06-25

申请人： Atsushi Watanabe

发明人： Atsushi Watanabe

IPC分类号： B05C3/12 ,  B05C13/02 ,  H01M4/04 ,  B05C9/04 ,  B65H23/022 ,  B65H23/032 ,  B65H23/038 ,  H01M4/88 ,  B05C5/02

CPC分类号： H01M4/0404 ,  B05C5/0254 ,  B05C9/04 ,  B05D2252/02 ,  B05D2252/10 ,  B65H23/022 ,  B65H23/0324 ,  B65H23/038 ,  H01M4/8828 ,  Y02E60/50

摘要： A double-sided coated substrate transport device (1) is described. A die head for front face coating (3) and a die head for back face coating (4) coat a coating liquid onto a substrate 1. A drying oven (5) dries the coating liquid applied to the substrate (1), to form coating films on the front and back faces of the substrate (1). A first and second rotating body unit (20A, 20B) are respectively furnished independently at widthwise edge sections of the substrate (1). Each of the first and second rotating body units has a free roller (21) and a drive roller (22) constituting a pair of rotating bodies, and a rotating body swivel section (23). The free roller (21) and the drive roller (22) grip the widthwise edge sections of the substrate (1) from the front and back sides. The rotating body swivel section (23) allows the orientation of the free roller (21) and the drive roller (22), respectively, to be modified separately for the first rotating body unit (20A) and the second rotating body unit (20B), so that the rotation axis of the free roller (21) and the drive roller (22) is inclined towards the downstream side in the substrate transport direction as seen from the outside in the substrate widthwise direction, with respect to a line perpendicular to the substrate transport direction.

摘要翻译： 对双面涂布基板输送装置（1）进行说明。 用于前面涂层的模头（3）和用于背面涂层的模头（4）将涂布液涂覆到基材1上。干燥箱（5）将施加到基材（1）上的涂布液干燥，形成 在基板（1）的前表面和背面上涂覆膜。 第一和第二旋转体单元（20A，20B）分别独立地设置在基板（1）的宽度方向的边缘部分。 第一和第二旋转体单元中的每一个具有构成一对旋转体的自由辊（21）和驱动辊（22），以及旋转体旋转部（23）。 自由辊（21）和驱动辊（22）从前侧和后侧夹紧基板（1）的宽度方向的边缘部分。 旋转体旋转部（23）能够分别对第一旋转体单元（20A）和第二旋转体单元（20B）分别改变自由辊（21）和驱动辊（22）的取向， 使得自由辊（21）和驱动辊（22）的旋转轴线在从基板宽度方向的外侧观察到的基板输送方向上的下游侧相对于垂直于基板横向的线倾斜 基材输送方向。

公开(公告)号：US08863708B2

公开(公告)日：2014-10-21

申请号：US13614256

申请日：2012-09-13

申请人： Atsushi Watanabe ,  Yasuhide Takada ,  Osamu Fujita ,  Tetsuya Shibukawa

发明人： Atsushi Watanabe ,  Yasuhide Takada ,  Osamu Fujita ,  Tetsuya Shibukawa

IPC分类号： F01L1/34

CPC分类号： F01L1/3442 ,  F01L2001/34423 ,  F01L2001/3443 ,  F01L2001/34459 ,  F01L2001/34466

摘要： Even if an internal combustion engine is stopped having a lock pin of a vane rotor kept disengaged from a lock recess, subsequent engine starting can instantly move the vane rotor to a desired angular position where the lock member an be engaged with the lock recess. The vane rotor has therein two passage control mechanisms each having a hydraulically actuated valve body. When the valve body is moved to a given position, retarding and advancing hydraulic holes become communicated to each other through an annular groove of the valve body. Due to this ON communication, retarding and advancing operation chambers become communicated, so that reciprocative swing movement of the vane rotor induced by an alternating torque produced at the starting of the engine is effectively made and thus the vane rotor can be quickly turned to the desired angular position for ease of engine starting.

摘要翻译： 即使停止具有叶片转子的锁定销与锁定凹部脱离的内燃机，随后的发动机起动可以将叶片转子立即移动到锁定构件与锁定凹部接合的期望角度位置。 叶片转子具有两个通道控制机构，每个具有液压致动阀体。 当阀体移动到给定位置时，延迟和前进的液压孔通过阀体的环形槽相互连通。 由于这种ON通信，延迟和前进操作室变得通信，从而有效地在发动机启动时产生的交替转矩引起的叶片转子的往复摆动运动，从而可以将叶片转子快速转向所需的 角位置，便于发动机起动。

公开(公告)号：US08784381B2

公开(公告)日：2014-07-22

申请号：US13148364

申请日：2010-03-01

申请人： Atsushi Watanabe ,  Seiji Kikuchi ,  Tsuguhiro Kondo

发明人： Atsushi Watanabe ,  Seiji Kikuchi ,  Tsuguhiro Kondo

IPC分类号： A61M37/00 ,  A61M5/32

CPC分类号： A61M5/5086 ,  A61M5/20 ,  A61M5/3146 ,  A61M5/31546 ,  A61M5/326 ,  A61M2005/206 ,  A61M2005/31588 ,  A61M2205/14 ,  A61M2205/215 ,  A61M2205/276 ,  A61M2205/332 ,  A61M2205/50 ,  G06F19/00

摘要： A drug injection device includes a main body case having an injection needle let-in/let-out opening, a drug syringe mounting component that is provided inside the main body case and in which a drug syringe is mounted, a piston that is movable with respect to the drug syringe mounting component, a drive mechanism that drives the piston, a controller that is electrically connected to the drive mechanism, and an acceleration sensor that is electrically connected to the controller. This drug injection device allows the injection of a drug to be carried out safely and properly.

摘要翻译： 药物注射装置包括具有注射针入/出开口的主体壳体，设置在主体壳体内部并且其中安装有药物注射器的药物注射器安装部件，能够与 相对于药物注射器安装部件，驱动活塞的驱动机构，与驱动机构电连接的控制器以及与控制器电连接的加速度传感器。 该药物注射装置允许药物的注射被安全且适当地进行。

公开(公告)号：US08668787B2

公开(公告)日：2014-03-11

申请号：US12882413

申请日：2010-09-15

申请人： Atsushi Watanabe

发明人： Atsushi Watanabe

IPC分类号： C23C14/34 ,  C22C5/06

CPC分类号： C23C14/3414 ,  C03C17/09 ,  C03C17/36 ,  C03C17/3647 ,  C03C17/3663 ,  C03C17/3671 ,  C03C17/3676 ,  C03C17/40 ,  C22C5/06 ,  C23C14/185 ,  C23C14/58 ,  C23C14/5806 ,  C23C14/5866

摘要： It is an object of the present invention to provide a Ag—Pd—Cu—Ge type silver alloy which can form a reflective electrode film having such two characteristics that it is very reduced in the lowering of reflectance caused by thermal deterioration and has resistant to yellowing caused by sulfurization even after a heating step in a process of producing a color liquid crystal display. The silver alloy according to the present invention includes a composition containing at least four elements including Ag as its major component, 0.10 to 2.89 wt % of Pd, 0.10 to 2.89 wt % of Cu and 0.01 to 1.50 wt % of Ge, and the total amount of Pd, Cu and Ge is 0.21 to 3.00 wt %.

摘要翻译： 本发明的目的是提供一种Ag-Pd-Cu-Ge型银合金，其可以形成具有这样两个特性的反射电极膜，其在由热劣化引起的反射率的降低中被极大地降低，并且具有耐 即使在制造彩色液晶显示器的过程中的加热步骤之后，由硫化引起的黄变。 根据本发明的银合金包括含有至少四种元素的组合物，包括Ag作为其主要成分，0.10至2.89重量％的Pd，0.10至2.89重量％的Cu和0.01至1.50重量％的Ge， Pd，Cu和Ge的含量为0.21〜3.00重量％。