公开(公告)号：US10832892B2

公开(公告)日：2020-11-10

申请号：US16478770

申请日：2018-01-04

Applicant: Tokyo Electron Limited

Inventor： Kazuki Takahashi ,  Yuki Kawada ,  Naoki Matsumoto ,  Takahiro Senda ,  Koji Koyama ,  Shohei Fukano ,  Jun Yoshikawa ,  Hiroyuki Kondo ,  Takashi Minakawa

IPC: H01J37/32 ,  H05H1/46

Abstract: An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis.

公开(公告)号：US10062547B2

公开(公告)日：2018-08-28

申请号：US14448003

申请日：2014-07-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naoki Mihara ,  Naoki Matsumoto ,  Jun Yoshikawa ,  Kazuo Murakami

IPC: C23C16/511 ,  H01J37/32 ,  C23C16/513

CPC classification number: H01J37/32192 ,  C23C16/513 ,  H01J37/3244 ,  H01J37/32449

Abstract: In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.

公开(公告)号：US09728417B2

公开(公告)日：2017-08-08

申请号：US14371584

申请日：2012-11-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masaki Inoue ,  Toshihisa Ozu ,  Takehiro Tanikawa ,  Jun Yoshikawa

IPC: H01L21/302 ,  H01L21/461 ,  H01B13/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/311 ,  H01L29/49 ,  H01L21/3213 ,  H01L29/66 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/4916 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659

Abstract: An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a) preparing a base body to be processed in a processing chamber, and (b) supplying a first processing gas which contains carbon and fluorine but does not contain oxygen into the processing chamber and generating plasma in the processing chamber.

公开(公告)号：US09659754B2

公开(公告)日：2017-05-23

申请号：US14071717

申请日：2013-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun Yoshikawa ,  Yoshio Susa ,  Naoki Matsumoto ,  Peter L. G. Ventzek

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/3266 ,  H01J37/32669 ,  H01J37/32678

Abstract: The present disclosure provides a plasma processing apparatus, including: a processing chamber; an oscillator configured to output high-frequency power; a power supply unit configured to supply the high-frequency power from a specific plasma generating location into the processing chamber; a magnetic field forming unit provided outside the processing chamber and configured to forming a magnetic field at least at the specific plasma generating location; and a control unit configured to control the magnetic field formed by the magnetic field forming unit such that a relationship between an electron collision frequency fe of plasma generated in the processing chamber and a cyclotron frequency fc is fc>fe.

公开(公告)号：US20150017811A1

公开(公告)日：2015-01-15

申请号：US14371584

申请日：2012-11-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masaki Inoue ,  Toshihisa Ozu ,  Takehiro Tanikawa ,  Jun Yoshikawa

IPC: H01L21/3065 ,  H01L29/49

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/4916 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659

Abstract: An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a) preparing a base body to be processed in a processing chamber, and (b) supplying a first processing gas which contains carbon and fluorine but does not contain oxygen into the processing chamber and generating plasma in the processing chamber.

Abstract translation: 示例性实施例提供了一种蚀刻待处理的基体中的第二层的方法，该第一层具有包含Ni和Si的第一层和暴露于其表面的含有Si和N的第二层。 根据示例性实施例的方法包括（a）在处理室中准备待加工的基体，以及（b）将含有碳和氟但不含氧的第一处理气体供应到处理室中并产生等离子体 处理室。

公开(公告)号：US10566174B2

公开(公告)日：2020-02-18

申请号：US14931919

申请日：2015-11-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun Yoshikawa

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole.

公开(公告)号：US10083819B2

公开(公告)日：2018-09-25

申请号：US14675873

申请日：2015-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naoki Matsumoto ,  Koji Koyama ,  Jun Yoshikawa

IPC: C23C16/00 ,  H01J37/32 ,  C23C16/511 ,  H05H1/46 ,  H01Q13/10 ,  H01Q21/06 ,  H01Q21/20 ,  H01L21/3213

CPC classification number: H01J37/3222 ,  C23C16/511 ,  H01J37/32238 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/32137 ,  H01Q13/10 ,  H01Q21/064 ,  H01Q21/20 ,  H05H1/46 ,  H05H2001/4667

Abstract: An antenna includes a dielectric window and a slot plate provided at one surface of the dielectric window. The slot plate includes a plurality of slot pairs each being formed of two slots. The slot pairs are concentrically disposed about a centroid position of the slot plate and provided at positions where straight lines extending from the centroid position of the slot plate and passing through each slot pair are not overlapped with each other.

公开(公告)号：US09324542B2

公开(公告)日：2016-04-26

申请号：US14426671

申请日：2013-09-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naoki Matsumoto ,  Yugo Tomita ,  Naoki Mihara ,  Kazuki Takahashi ,  Michitaka Aita ,  Jun Yoshikawa ,  Takahiro Senda ,  Yoshiyasu Sato ,  Kazuyuki Kato ,  Kenji Sudou ,  Hitoshi Mizusugi

IPC: H01L21/302 ,  H01L21/461 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01J37/32449 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/66795

Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Abstract translation: 在示例性实施例的等离子体处理装置中，微波的能量通过电介质窗从天线引入处理容器。 等离子体处理装置包括中央引入单元和外围引入单元。 中央引入单元的中心引入口喷射恰好在电介质窗口下面的气体。 周边引入单元的多个周边引入口朝向放置区域的周边注入气体。 中央引入单元通过多个第一流量控制单元与包括反应气体源和稀有气体源的多个第一气体源连接。 周边引入单元通过多个第二流量控制单元与包括反应气体源和稀有气体源的多个第二气体源连接。

公开(公告)号：US20140080311A1

公开(公告)日：2014-03-20

申请号：US14087368

申请日：2013-11-22

Applicant: Tokyo Electron Limited

Inventor： Naoki Matsumoto ,  Jun Yoshikawa ,  Tetsuya Nishizuka ,  Masaru Sasaki

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J37/32568 ,  H01J2237/3343 ,  H01L21/31116 ,  H01L21/32137

Abstract: A plasma processing method includes holding a target substrate on a holding table installed in a processing chamber; generating a microwave for plasma excitation; supplying a reactant gas having dissociation property; generating an electric field by introducing the microwave via a dielectric plate disposed to face the holding table; setting a distance between the holding table and the dielectric plate is set to a first distance based on periodicity of a standing wave formed in the dielectric plate by the introduction of the microwave, and generating plasma in the processing chamber in a state where the electric field is generated in the processing chamber; and after the generating of the plasma, setting the distance to a second distance shorter than the first distance by moving the holding table up and down, and performing the plasma process on the target substrate.

Abstract translation: 等离子体处理方法包括将目标基板保持在安装在处理室中的保持台上; 产生用于等离子体激发的微波; 提供具有解离性的反应气体; 通过经由设置在所述保持台上的电介质板引入微波而产生电场; 将保持台和电介质板之间的距离设定为基于通过引入微波在电介质板中形成的驻波的周期性的第一距离，并且在电场的状态下产生等离子体 在处理室中产生; 并且在产生等离子体之后，通过上下移动保持台将距离设置为短于第一距离的第二距离，并且对目标基板执行等离子体处理。