公开(公告)号：US20240304439A1

公开(公告)日：2024-09-12

申请号：US18273116

申请日：2022-01-13

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Philippe GAUBERT ,  Hajime NAKABAYASHI ,  Chihiro TAMURA ,  Hisashi WARASHINA

IPC: H01L21/02 ,  C23C8/10 ,  H01L21/67 ,  H01L23/00

CPC classification number: H01L21/02244 ,  C23C8/10 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/67288 ,  H01L23/562

Abstract: A substrate processing method includes: forming a metal film, which changes in volume when the metal film is oxidized, on a rear surface of a substrate; forming an oxide film, through which oxygen permeates, on a front surface of the metal film; and applying stress to the substrate by oxidizing the metal film.

公开(公告)号：US20240087916A1

公开(公告)日：2024-03-14

申请号：US18499667

申请日：2023-11-01

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: H01L21/67 ,  C23C16/26 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01L21/67051 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/45587 ,  C23C16/50 ,  H01L21/6704

Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

公开(公告)号：US20230361163A1

公开(公告)日：2023-11-09

申请号：US18246391

申请日：2021-09-10

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Hajime NAKABAYASHI ,  Akinobu KAKIMOTO ,  Nobutake KABUKI ,  Yumiko KAWANO ,  Sara OTSUKI

IPC: H01L21/02 ,  C23C16/455

CPC classification number: H01L28/60 ,  C23C16/45529

Abstract: This film formation method comprises: a first film formation step; a second film formation step; and a third film formation step. In the first film formation step, a dielectric film is formed on a first conductive film. In the second film formation step, a metal oxide film is formed on the dielectric film. In addition, in the second film formation step, a metal oxide film is formed using heated oxygen gas and a vapor of an organic metal compound. In the third film formation step, a second conductive film is formed on the metal oxide film.

公开(公告)号：US20230135523A1

公开(公告)日：2023-05-04

申请号：US17907699

申请日：2021-08-12

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Hiroyuki NAGAI ,  Mitsuaki IWASHITA ,  Hirokazu UEDA

IPC: F25B21/02 ,  H10N15/10 ,  F25B49/00

Abstract: An electrocaloric effect element includes a container having a first wall and a second wall, the second wall facing the first wall, ionic liquid accommodated in the container, a first electrode provided at an outer surface of the first wall, and a movable electrode provided in the ionic liquid such that the movable electrode is movable in the ionic liquid.

公开(公告)号：US20230086545A1

公开(公告)日：2023-03-23

申请号：US17932800

申请日：2022-09-16

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Chihiro TAMURA ,  Hisashi WARASHINA

IPC: H01L21/228 ,  H01L21/02 ,  C30B1/10 ,  C30B29/52 ,  C30B1/02

Abstract: A method of forming conductive member includes: forming, on substrate, first portion containing first element constituting the conductive member to be obtained and second element causing eutectic reaction with the first element, and second portion containing third element constituting intermetallic compound with the second element; crystallizing primary crystals of the first element by adjusting temperature of the substrate after bringing the first portion into liquid phase state; growing crystal grains of the first element by diffusing the second element from the first portion into the second portion to increase ratio of the first element in crystal state to the first and second elements in the liquid phase state in the first portion while maintaining the temperature of the substrate at the same temperature; and turning the first portion, after completing diffusion of the second element into the second portion, into the conductive member having crystal grains of the first element.

公开(公告)号：US20190096750A1

公开(公告)日：2019-03-28

申请号：US16144311

申请日：2018-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yumiko KAWANO ,  Shuji AZUMO ,  Hiroki MURAKAMI ,  Michitaka AITA ,  Tadahiro ISHIZAKA ,  Koji AKIYAMA ,  Yusaku KASHIWAGI ,  Hajime NAKABAYASHI

IPC: H01L21/768

Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

公开(公告)号：US20150017813A1

公开(公告)日：2015-01-15

申请号：US14504915

申请日：2014-10-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji AKIYAMA ,  Hirokazu HIGASHIJIMA ,  Chihiro TAMURA ,  Shintaro AOYAMA ,  Yu WAMURA

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/46 ,  C23C16/06 ,  H01L21/28 ,  C23C16/52

CPC classification number: H01L21/02356 ,  C23C16/06 ,  C23C16/405 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28158 ,  H01L21/28185 ,  H01L21/67109 ,  H01L21/67115 ,  H01L28/40 ,  H01L29/401 ,  H01L29/517

Abstract: A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Abstract translation: 一种半导体器件制造方法，包括：在具有源极，漏极和沟道的工件上形成含有氧化铪和氧化锆的栅极绝缘膜; 并且在600℃或更低的温度下对栅极绝缘膜进行结晶热处理。 进行结晶热处理的栅极绝缘膜的相对介电常数为27以上。