公开(公告)号：US10700202B2

公开(公告)日：2020-06-30

申请号：US16172856

申请日：2018-10-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuang-Hsiu Chen ,  Sung-Yuan Tsai ,  Chi-Hsuan Tang ,  Kai-Hsiang Wang ,  Chao-Nan Chen ,  Shi-You Liu ,  Chun-Wei Yu ,  Yu-Ren Wang

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/165 ,  H01L29/66 ,  H01L21/265

Abstract: A semiconductor device is disclosed. The semiconductor device comprises a substrate, a gate structure disposed on the substrate, a spacer disposed on the substrate and covering a sidewall of the gate structure, an air gap sandwiched between the spacer and the substrate, and a source/drain region disposed in the substrate and having a faceted surface exposed from the substrate, wherein the faceted surface borders the substrate on a boundary between the air gap and the substrate.

公开(公告)号：US20200052123A1

公开(公告)日：2020-02-13

申请号：US16056540

申请日：2018-08-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Liang Ye ,  Chun-Wei Yu ,  Yu-Ren Wang ,  Hao-Hsuan Chang ,  Chia-Wei Hsu

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324 ,  H01L21/762

Abstract: A method of rounding corners of a fin includes providing a substrate with a fin protruding from the substrate, wherein a pad oxide and a pad nitride entirely cover a top surface of the fin. Later, part of the pad oxide is removed laterally to expose part of the top surface of the fin. A silicon oxide layer is formed to contact two sidewalls of the fin and the exposed top surface, wherein two sidewalls and the top surface define two corners of the fin. After forming the silicon oxide layer, an annealing process is performed to round two corners of the fin. Finally, after the annealing process, an STI filling material is formed to cover the pad nitride, the pad oxide and the fin.

公开(公告)号：US10460925B2

公开(公告)日：2019-10-29

申请号：US15639381

申请日：2017-06-30

Applicant: United Microelectronics Corp.

Inventor： Hsu Ting ,  Kuang-Hsiu Chen ,  Chun-Wei Yu ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC: H01L21/02 ,  H01L21/311 ,  H01L29/66

Abstract: A method for processing a semiconductor device is provided. The semiconductor device includes a protruding structure on a substrate, the protruding structure having a nitride spacer at a sidewall, and an epitaxial layer is formed in the substrate adjacent to the protruding structure. The method includes removing the nitride spacer on the protruding structure. Then, a dilute hydrofluoric (DHF) cleaning process is performed over the substrate, wherein a top surficial portion of the epitaxial layer is removed. A standard clean (SC) process is performed over the substrate, wherein a native oxide layer is formed on an expose surface of the epitaxial layer.

公开(公告)号：US10366991B1

公开(公告)日：2019-07-30

申请号：US15880492

申请日：2018-01-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsu Ting ,  Yu-Ying Lin ,  Yen-Hsing Chen ,  Chun-Jen Chen ,  Chun-Wei Yu ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/06

Abstract: A semiconductor device includes a semiconductor substrate, an isolation structure, a cladding layer, and a gate structure. The semiconductor substrate includes fin shaped structures. The isolation structure is disposed between the fin shaped structures. Each of the fin shaped structures includes a first portion disposed above a top surface of the isolation structure and a second portion disposed on the first portion. A width of the second portion is smaller than a width of the first portion. The cladding layer is disposed on the first portion and the second portion of each of the fin shaped structures. The cladding layer includes a curved surface. The gate structure is disposed straddling the fin shaped structures.

公开(公告)号：US10199485B2

公开(公告)日：2019-02-05

申请号：US15409467

申请日：2017-01-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Chueh-Yang Liu ,  Yu-Ren Wang

IPC: H01L29/06 ,  H01L29/775 ,  H01L29/78 ,  H01L29/08 ,  H01L29/12 ,  H01L29/165 ,  H01L29/66 ,  H01L21/265 ,  H01L21/306

Abstract: A semiconductor device includes a substrate including a first semiconductor material, a gate structure formed on the substrate, and a source stressor and a drain stressor formed in the substrate respectively in a recess at two sides of the gate structure. The source stressor and the drain stressor respectively include at least a first quantum wire and at least a second quantum wire formed on the first quantum wire. The first quantum wire includes the first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. And the second quantum wire includes the second semiconductor material.

公开(公告)号：US20180204939A1

公开(公告)日：2018-07-19

申请号：US15409467

申请日：2017-01-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Chueh-Yang Liu ,  Yu-Ren Wang

IPC: H01L29/775 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/12 ,  H01L29/165 ,  H01L29/66 ,  H01L21/265 ,  H01L21/306

CPC classification number: H01L29/775 ,  H01L21/26513 ,  H01L21/30604 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/125 ,  H01L29/165 ,  H01L29/66439 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate including a first semiconductor material, a gate structure formed on the substrate, and a source stressor and a drain stressor formed in the substrate respectively in a recess at two sides of the gate structure. The source stressor and the drain stressor respectively include at least a first quantum wire and at least a second quantum wire formed on the first quantum wire. The first quantum wire includes the first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. And the second quantum wire includes the second semiconductor material.

公开(公告)号：US20180096995A1

公开(公告)日：2018-04-05

申请号：US15284552

申请日：2016-10-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Liang Ye ,  Kuang-Hsiu Chen ,  Chun-Wei Yu ,  Chueh-Yang Liu ,  Yu-Ren Wang

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823462 ,  H01L29/517

Abstract: A method of forming a gate structure on a fin structure includes the steps of providing a fin structure covered by a first silicon oxide layer, a silicon nitride layer, a gate material and a cap material in sequence, wherein the silicon nitride layer contacts the first silicon oxide layer. Later, the cap material is patterned to form a first cap layer and the gate material is patterned to form a first gate electrode by taking the silicon nitride layer as an etching stop layer. Then, the silicon nitride layer not covered by the first gate electrode is removed to expose part of the first silicon oxide layer. Finally, a first dielectric layer is formed to conformally cover the first silicon oxide layer, the first gate electrode and the first cap layer.

公开(公告)号：US09871113B2

公开(公告)日：2018-01-16

申请号：US15064275

申请日：2016-03-08

Applicant: United Microelectronics Corp.

Inventor： Chun-Wei Yu ,  Kuang-Hsiu Chen ,  Chueh-Yang Liu ,  Yu-Ren Wang

IPC: H01L21/02 ,  H01L21/266 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/66492 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/0234 ,  H01L21/2652 ,  H01L21/266 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/4916 ,  H01L29/66545 ,  H01L29/66636

Abstract: A semiconductor process including the following steps is provided. An epitaxial layer is formed on a substrate. An oxide layer is formed on the epitaxial layer, wherein the oxide layer includes a chemical oxide layer, a high-temperature oxide (HTO) layer or a surface modification oxide layer. An ion implant process is performed to the epitaxial layer to form a doped region in the epitaxial layer. The oxide layer is removed by using a diluted hydrofluoric acid (DHF) solution after performing the ion implant process, wherein a volume ratio of water to a hydrofluoric acid (HF) in the DHF solution is 200:1 to 1000:1.

公开(公告)号：US20170221723A1

公开(公告)日：2017-08-03

申请号：US15012821

申请日：2016-02-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Liang Ye ,  Kuang-Hsiu Chen ,  Chueh-Yang Liu ,  Yu-Ren Wang

IPC: H01L21/321 ,  H01L21/3105 ,  H01L21/283 ,  H01L21/02 ,  H01L29/66 ,  H01L21/3205

CPC classification number: H01L21/3212 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/283 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/32055 ,  H01L21/32115 ,  H01L29/66795

Abstract: A method for fabricating a semiconductor structure includes following steps. First, a first layer, a second layer and a third layer are sequentially formed on the substrate. The second layer is conformally disposed on the top surface of the first layer. The second layer and the first layer have different compositions, and the third layer and the second layer also have different compositions. Then, a planarizing process is performed on the third layer until portions of the second layer are exposed. Afterwards, hydrofluoric acid and aqueous oxidant are concurrently or sequentially provided to the remaining second and third layers. Finally, an etch back process is carried out to remove all the second layer and portions of the first layer.

公开(公告)号：US20160365245A1

公开(公告)日：2016-12-15

申请号：US14805639

申请日：2015-07-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Wei Huang ,  Keng-Jen Lin ,  Yi-Hui Lin ,  Yu-Ren Wang

IPC: H01L21/02 ,  H01L29/06 ,  H01L21/3205

CPC classification number: H01L21/76224 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/32055 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

Abstract translation: 提供一种用于填充半导体器件的间隙的方法和具有由其形成的绝缘间隙的半导体器件。 首先，设置具有多个突出部的硅基板，并且突出部通过预定深度的间隙彼此间隔开。 在硅衬底之上形成含氮化物层，用于覆盖作为衬里氮化物的间隙的突出部分和表面。 然后，在含氮化物层上形成非晶硅层。 在非晶硅层上形成绝缘层，并用绝缘层填充间隙。