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公开(公告)号：US09219194B2
公开(公告)日：2015-12-22
申请号：US14588087
申请日：2014-12-31
Inventor： Junpeng Shi , Jiali Zhuo , Lixun Yang , Shaohua Huang
CPC classification number: H01L33/145 , H01L33/0079 , H01L33/385 , H01L33/405 , H01L33/46 , H01L2933/0016 , H01L2933/0025
Abstract: A flip-chip LED includes a substrate, having a surface with a p-region metal portion and an n-region metal portion separated from each other; a p-type epitaxial layer, an active layer and an n-type epitaxial layer successively laminated on the substrate; a reflection layer between the substrate and the p-type epitaxial layer; a current blocking layer between the reflection layer and the p-type epitaxial layer and positioned to prevent the current from concentrating on the edge of the LED; an insulating protection layer cladding the LED side wall and exposing part of the side wall of the n-type epitaxial layer; a P electrode connecting the metal reflection layer and the p-region metal portion of the substrate; and an N electrode connecting the side wall of the n-type epitaxial layer and n-region metal portion of the substrate.
Abstract translation: 倒装LED包括具有p区域金属部分的表面和分离的n区域金属部分的基板; p型外延层，有源层和n型外延层，依次层压在基板上; 在所述衬底和所述p型外延层之间的反射层; 反射层和p型外延层之间的电流阻挡层，并被定位成防止电流集中在LED的边缘上; 绝缘保护层包覆LED侧壁并暴露n型外延层的侧壁的一部分; 连接所述金属反射层和所述基板的p区域金属部的P电极; 以及连接n型外延层的侧壁和基板的n区金属部分的N电极。
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公开(公告)号：US20150144974A1
公开(公告)日：2015-05-28
申请号：US14402175
申请日：2013-03-21
Inventor： Shunping Chen , Xiaoqiang Zeng , Shaohua Huang , Qunfeng Pan , Jyh-Chiarng Wu
CPC classification number: H01L33/08 , H01L25/0753 , H01L27/15 , H01L33/0079 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
Abstract: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (111), a light-emitting layer (112) and a second semiconductor layer (113) from top down; a first insulating layer (131) is arranged between the second semiconductor layer (113) of the first LED and the conductive substrate (102) for mutual isolation; an ohmic contact is formed between the second semiconductor layer (113) of the second LED and the conductive substrate (102); a first conductive structure that connects the first semiconductor layer (111) of the first LED, the second semiconductor layer (113) of the second LED and the conductive substrate (102); and a second conductive structure that connects the second semiconductor layer (113) of the first LED and the first semiconductor layer (111) of the second LED.
Abstract translation: 本发明公开了一种垂直AC LED元件及其制造方法，其中垂直AC LED元件包括导电衬底（102）; 导电基板（102）上的发光模块，包括两个水平布置的并联和相互隔离的LED; 其中所述第一和第二LED包括从上到下的第一半导体层（111），发光层（112）和第二半导体层（113） 第一绝缘层（131）布置在第一LED的第二半导体层（113）和导电基板（102）之间以进行相互隔离; 在第二LED的第二半导体层（113）和导电基板（102）之间形成欧姆接触; 连接第一LED的第一半导体层（111），第二LED的第二半导体层（113）和导电基板（102）的第一导电结构; 以及连接第一LED的第二半导体层（113）和第二LED的第一半导体层（111）的第二导电结构。
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公开(公告)号：US20150084088A1
公开(公告)日：2015-03-26
申请号：US14395631
申请日：2013-03-19
Inventor： Shaohua Huang , Jyh-Chiarng Wu
CPC classification number: H01L33/002 , H01L33/0079 , H01L33/025 , H01L33/12 , H01L33/14
Abstract: Disclosed is a light-emitting diode with an n-type graded buffer layer and a manufacturing method therefor. An epitaxial structure of a light-emitting diode comprises: a growth substrate; an n-type graded buffer layer located on the growth substrate; an n-type limiting layer (231) located on the n-type graded buffer layer; an active layer (232) located on the n-type limiting layer (231); and a p-type limiting layer (233) located on the active layer (232). A buffer layer is converted into an n-type graded buffer layer by means of an ion implantation method, and is applied to a light-emitting diode chip of a vertical structure while ensuring that a high-quality epitaxial structure is obtained, thereby being able to effectively reduce the contact resistance.
Abstract translation: 公开了具有n型渐变缓冲层的发光二极管及其制造方法。 发光二极管的外延结构包括：生长衬底; 位于生长衬底上的n型渐变缓冲层; 位于n型渐变缓冲层上的n型限制层（231）; 位于所述n型限制层（231）上的有源层（232）; 和位于有源层（232）上的p型限制层（233）。 通过离子注入法将缓冲层转换成n型渐变缓冲层，并且将其应用于垂直结构的发光二极管芯片，同时确保获得高质量的外延结构，从而能够 有效降低接触电阻。
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14.发明申请公开(公告)号：US20140291708A1
公开(公告)日：2014-10-02
申请号：US14358190
申请日：2012-12-21
Inventor： Xiaoqiang Zeng , Shunping Chen , Shaohua Huang , Qunfeng Pan
IPC: H01L25/075 , H01L25/00
CPC classification number: H01L25/0753 , H01L25/50 , H01L27/156 , H01L33/0079 , H01L33/38 , H01L2924/0002 , H01L2924/00
Abstract: This invention discloses an AC-type vertical light emitting element and fabrication method thereof, which achieves polarity reversal of two LEDs via regional laser stripping and die bonding. The two LEDs are placed on a conductive substrate (e.g. Si substrate); therefore, the bonding pads of the two LEDs are on the back of the conductive substrate and the light emitting surfaces of the two LEDs, thus overcoming such problems of low light emitting efficiency and high thermal resistance of the traditional lateral structure.
Abstract translation: 本发明公开了一种AC型垂直发光元件及其制造方法，其通过区域激光剥离和芯片接合实现两个LED的极性反转。 两个LED放置在导电衬底（例如Si衬底）上; 因此，两个LED的接合焊盘位于导电基板的背面和两个LED的发光表面上，从而克服了传统横向结构的低发光效率和高热阻的问题。
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公开(公告)号：US20210320233A1
公开(公告)日：2021-10-14
申请号：US17356755
申请日：2021-06-24
Inventor： Hailin Rao , Shaohua Huang , Xiaoqiang Zeng , Lixun Yang , Shuiqing LI , Linrong CAI
Abstract: A light-emitting device includes an LED chip disposed on a supporting component. The LED chip includes a semiconductor stack formed on a substrate, a first electrode, and a second electrode. A light-blocking layer fills the supporting component to cover a lateral side of the LED chip and expose a top chip surface of the LED chip. The light-blocking layer has a top surface not lower than the top chip surface of the LED chip. A height difference among the top chip surface, the top surface of the light-blocking layer and a top end of the supporting component is less than 10 μm. A top light exit port defined by the light-blocking layer to expose the top chip surface has a cross sectional area not larger than that of the top chip surface.
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Patent Agency Ranking
公开(公告)号：US09812613B2
公开(公告)日：2017-11-07
申请号：US15289145
申请日：2016-10-08
Inventor： Shaohua Huang , Xiaoqiang Zeng , Chih-Wei Chao
IPC: H01L29/205 , H01L33/00 , H01L33/38 , H01L33/48 , H01L27/15 , H01L33/44 , H01L21/78 , H01L25/075 , H01L33/62 , H01L23/00
CPC classification number: H01L33/385 , H01L21/78 , H01L24/14 , H01L25/0753 , H01L27/15 , H01L27/153 , H01L27/156 , H01L33/005 , H01L33/382 , H01L33/387 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2224/16245 , H01L2924/01322 , H01L2924/12041 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: A light-emitting diode (LED) includes: an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface; at least one insulating layer over the lower surface; and an electrode pad layer over the at least one insulating layer; wherein: the electrode pad layer comprises a P electrode region and an N electrode region; and the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer.
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公开(公告)号：US09728670B2
公开(公告)日：2017-08-08
申请号：US14395631
申请日：2013-03-19
Inventor： Shaohua Huang , Jyh-Chiarng Wu
CPC classification number: H01L33/002 , H01L33/0079 , H01L33/025 , H01L33/12 , H01L33/14
Abstract: Disclosed is a light-emitting diode with an n-type graded buffer layer and a manufacturing method therefor. An epitaxial structure of a light-emitting diode comprises: a growth substrate; an n-type graded buffer layer located on the growth substrate; an n-type limiting layer (231) located on the n-type graded buffer layer; an active layer (232) located on the n-type limiting layer (231); and a p-type limiting layer (233) located on the active layer (232). A buffer layer is converted into an n-type graded buffer layer by means of an ion implantation method, and is applied to a light-emitting diode chip of a vertical structure while ensuring that a high-quality epitaxial structure is obtained, thereby being able to effectively reduce the contact resistance.
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公开(公告)号：US09472726B2
公开(公告)日：2016-10-18
申请号：US14748921
申请日：2015-06-24
Inventor： Shaohua Huang , Xiaoqiang Zeng , Chih-Wei Chao
IPC: H01L33/00 , H01L33/38 , H01L33/48 , H01L27/15 , H01L33/44 , H01L21/78 , H01L25/075 , H01L23/00 , H01L33/62
CPC classification number: H01L33/385 , H01L21/78 , H01L24/14 , H01L25/0753 , H01L27/15 , H01L27/153 , H01L27/156 , H01L33/005 , H01L33/382 , H01L33/387 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2224/16245 , H01L2924/01322 , H01L2924/12041 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: An integrated LED light-emitting device includes: at least two mutually-isolated LED light-emitting epitaxial units having an upper and a lower surface, in which, the upper surface is a light-emitting surface; an electrode pad layer over the lower surface of the LED light-emitting epitaxial unit, with sufficient thickness for supporting the LED epitaxial unit and connecting to each LED light-emitting epitaxial unit to form a connection circuit plane with no height difference; and the electrode pad layer is divided into a P electrode region and an N electrode region. The LED light-emitting epitaxial units constitute a series, parallel or series-parallel circuit. Embodiments disclosed herein can effectively improve the problems of package welding, electrode shading and poor wiring stability.
Abstract translation: 集成LED发光装置包括：具有上表面和下表面的至少两个相互隔离的LED发光外延单元，其中上表面是发光表面; 在LED发光外延单元的下表面上方具有足够的厚度，用于支撑LED外延单元并连接到每个LED发光外延单元以形成没有高度差的连接电路平面; 电极焊盘层分为P电极区域和N电极区域。 LED发光外延单元构成串联，并联或串联并联电路。 本文公开的实施例可以有效地改善包装焊接，电极阴影和布线稳定性差的问题。
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公开(公告)号：US09312449B2
公开(公告)日：2016-04-12
申请号：US14641424
申请日：2015-03-08
Inventor： Lixun Yang , Junpeng Shi , Xinghua Liang , Gaolin Zheng , Zhibai Zhong , Shaohua Huang , Chih-Wei Chao
CPC classification number: H01L33/405 , H01L33/145 , H01L33/38 , H01L33/62
Abstract: An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.
Abstract translation: 用于有效提高半导体LED的稳定性的电极结构包括能够电流扩散的反射层。 在这样的电极结构中，电流从反射层的侧面注入电极和LED接触面之间的接触面上形成一定的电位梯度，从而抑制反射层的金属离子由于电 在使用期间，从而提高了设备的稳定性。 此外，用于电流注入的电极部分可以包括高反射率材料，但不易于离子迁移，从而增加整个反射面积并提高发光效率。
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20.发明授权公开(公告)号：US09269698B2
公开(公告)日：2016-02-23
申请号：US14358190
申请日：2012-12-21
Inventor： Xiaoqiang Zeng , Shunping Chen , Shaohua Huang , Qunfeng Pan
CPC classification number: H01L25/0753 , H01L25/50 , H01L27/156 , H01L33/0079 , H01L33/38 , H01L2924/0002 , H01L2924/00
Abstract: This invention discloses an AC-type vertical light emitting element and fabrication method thereof, which achieves polarity reversal of two LEDs via regional laser stripping and die bonding. The two LEDs are placed on a conductive substrate (e.g. Si substrate); therefore, the bonding pads of the two LEDs are on the back of the conductive substrate and the light emitting surfaces of the two LEDs, thus overcoming such problems of low light emitting efficiency and high thermal resistance of the traditional lateral structure.
Abstract translation: 本发明公开了一种AC型垂直发光元件及其制造方法，其通过区域激光剥离和芯片接合实现两个LED的极性反转。 两个LED放置在导电衬底（例如Si衬底）上; 因此，两个LED的接合焊盘位于导电基板的背面和两个LED的发光表面上，从而克服了传统横向结构的低发光效率和高热阻的问题。
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