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公开(公告)号：US07560352B2
公开(公告)日：2009-07-14
申请号：US11378101
申请日：2006-03-17
IPC分类号： H01L21/336
CPC分类号： H01L29/7834 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/76243 , H01L21/823814 , H01L21/8249 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7848 , Y10S438/969
摘要： A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.
摘要翻译： 在衬底表面上外延形成含硅材料的方法通过调节处理室的温度和压力，利用含卤素气体作为蚀刻气体以及载气。 使用HCl作为含卤素气体是有利的，因为通过调节室压力可以容易地将HCl从载气转化为蚀刻气体。
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12.发明申请公开(公告)号：US20130256760A1
公开(公告)日：2013-10-03
申请号：US13436644
申请日：2012-03-30
IPC分类号： H01L29/267 , H01L21/20
CPC分类号： H01L29/205 , H01L21/02381 , H01L21/02455 , H01L21/02538 , H01L21/0262 , H01L21/02694 , H01L29/267 , Y10T117/1008
摘要： A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from the substrate, positioning a substrate within a processing chamber, heating the substrate to a first temperature, cooling the substrate to a second temperature, flowing a group III precursor into the processing chamber, maintaining the second temperature while flowing a group III precursor and a group V precursor into the processing chamber until a conformal layer is formed, heating the processing chamber to an annealing temperature, while stopping the flow of the group III precursor, and cooling the processing chamber to the second temperature. Deposition of the III/V layer may be made selective through the use of halide gas etching which preferentially etches dielectric regions.
摘要翻译： 一种在硅衬底上形成保形III / V层的方法，其上形成有III / V层的所得衬底。 该方法包括从衬底去除原生氧化物，将衬底定位在处理室内，将衬底加热至第一温度，将衬底冷却至第二温度，将III族前体流入处理室，保持第二温度，同时 将III族前体和V族前体流入处理室，直到形成共形层，同时停止III族前体的流动，将处理室加热至退火温度，并将处理室冷却至第二温度。 可以通过使用优先蚀刻电介质区域的卤化物气蚀刻来选择性地制备III / V层的沉积。
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公开(公告)号：US08008166B2
公开(公告)日：2011-08-30
申请号：US12146177
申请日：2008-06-25
IPC分类号： H01L21/20
CPC分类号： H01L21/67017 , C30B25/08 , C30B29/06 , H01L21/02046 , H01L21/02238 , H01L21/02255 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/31662 , H01L21/67028 , H01L21/67069 , Y10S438/976
摘要： The present invention generally provides apparatus and method for forming a clean and damage free surface on a semiconductor substrate. One embodiment of the present invention provides a system that contains a cleaning chamber that is adapted to expose a surface of substrate to a plasma cleaning process prior to forming an epitaxial layer thereon. In one embodiment, a method is employed to reduce the contamination of a substrate processed in the cleaning chamber by depositing a gettering material on the inner surfaces of the cleaning chamber prior to performing a cleaning process on a substrate. In one embodiment, oxidation and etching steps are repeatedly performed on a substrate in the cleaning chamber to expose or create a clean surface on a substrate that can then have an epitaxial placed thereon. In one embodiment, a low energy plasma is used during the cleaning step.
摘要翻译： 本发明总体上提供了用于在半导体衬底上形成清洁和破坏自由表面的装置和方法。 本发明的一个实施例提供一种系统，其包含适于在衬底上形成外延层之前将衬底的表面暴露于等离子体清洁工艺的清洁室。 在一个实施方案中，采用一种方法来减少在清洁室中处理的基材的污染物，其中在对基材进行清洁处理之前，通过在清洁室的内表面上沉积吸气材料。 在一个实施例中，在清洁室中的基板上重复执行氧化和蚀刻步骤以暴露或产生衬底上的清洁表面，然后可以在其上放置外延。 在一个实施例中，在清洁步骤期间使用低能量等离子体。
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公开(公告)号：US07172792B2
公开(公告)日：2007-02-06
申请号：US10327467
申请日：2002-12-20
IPC分类号： C23C16/34
CPC分类号： H01L21/0217 , C23C16/34 , C23C16/345 , C23C16/56 , H01L21/022 , H01L21/02271 , H01L21/0234 , H01L21/3003 , H01L21/3185 , H01L29/665 , H01L29/6659
摘要： A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride film. The thermally deposited silicon nitride film is then treated with hydrogen radicals to form a treated silicon nitride film.
摘要翻译： 描述形成氮化硅膜的方法。 根据本发明，通过在低沉积温度（例如，低于550℃）下热分解含硅/氮的源气体或含硅源气体和含氮源气体来沉积氮化硅膜，以形成 氮化硅膜。 然后用氢自由基处理热沉积的氮化硅膜，以形成经处理的氮化硅膜。
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公开(公告)号：US07967911B2
公开(公告)日：2011-06-28
申请号：US11697937
申请日：2007-04-09
IPC分类号： C23C16/448 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4482
摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.
摘要翻译： 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。
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公开(公告)号：US08309440B2
公开(公告)日：2012-11-13
申请号：US13175446
申请日：2011-07-01
IPC分类号： H01L21/20
CPC分类号： H01L21/67017 , C30B25/08 , C30B29/06 , H01L21/02046 , H01L21/02238 , H01L21/02255 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/31662 , H01L21/67028 , H01L21/67069 , Y10S438/976
摘要： Embodiments described herein provide methods for processing a substrate. One embodiment comprises positioning a substrate in a processing region of a processing chamber, exposing a surface of the substrate disposed in the processing chamber to an oxygen containing gas to form a first oxygen containing layer on the surface, removing at least a portion of the first oxygen containing layer to expose at least a portion of the surface of the substrate, and exposing the surface of the substrate to an oxygen containing gas to form a second oxygen containing layer on the surface.
摘要翻译： 本文所述的实施例提供了用于处理衬底的方法。 一个实施例包括将衬底定位在处理室的处理区域中，将设置在处理室中的衬底的表面暴露于含氧气体，以在表面上形成第一含氧层，去除第一 含氧层以暴露基底表面的至少一部分，并将基底的表面暴露于含氧气体，以在表面上形成第二含氧层。
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17.发明授权Method and apparatus for forming a high quality low temperature silicon nitride layer 有权用于形成高质量低温氮化硅层的方法和装置公开(公告)号：US07972663B2
公开(公告)日：2011-07-05
申请号：US10741417
申请日：2003-12-19
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45523 , C23C16/56 , H01L21/022 , H01L21/02271 , H01L21/0234 , H01L21/3003 , H01L21/3185 , H01L21/67207 , H01L29/665 , H01L29/6659 , Y02P20/582
摘要： A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.
摘要翻译： 描述形成氮化硅层的方法。 根据本发明，通过在低沉积温度（例如，低于550℃）下热分解含硅/氮的源气体或含硅源气体和含氮源气体来沉积氮化硅层以形成 氮化硅层。 然后用氢自由基处理热沉积的氮化硅层，以形成经处理的氮化硅层。
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公开(公告)号：US09512520B2
公开(公告)日：2016-12-06
申请号：US13441382
申请日：2012-04-06
IPC分类号： C23C16/54 , C23C16/06 , C23C16/44 , C23C16/455 , H01L21/67
CPC分类号： C23C16/54 , C23C16/06 , C23C16/4412 , C23C16/45565 , C23C16/45574 , H01L21/67115 , H01L21/67184 , H01L21/67201 , H01L21/67207
摘要： Apparatus for processing substrates are provided. In some embodiments, a processing system may include a first transfer chamber and a first process chamber coupled to the transfer chamber, the process chamber further comprising a substrate support to support a processing surface of a substrate within the process chamber, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector provides the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译： 提供了用于处理衬底的设备。 在一些实施例中，处理系统可以包括耦合到传送室的第一传送室和第一处理室，处理室还包括用于支撑处理室内的基板的处理表面的基板支撑件， 所述衬底支撑件的第一侧面具有第一流动路径，以提供第一工艺气体和第二流动路径以提供独立于所述第一工艺气体的第二工艺气体，其中所述喷射器在所述处理表面上提供所述第一和第二工艺气体 基板支撑件上方的喷头，以将第一处理气体提供给处理表面;以及排气口，设置在与喷射器相对的基板支撑件的第二侧上，从而将第一和第二处理气体从 处理室。
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公开(公告)号：US09032990B2
公开(公告)日：2015-05-19
申请号：US13441371
申请日：2012-04-06
CPC分类号： G05D7/0641 , Y10T137/4259 , Y10T137/6416 , Y10T137/7043 , Y10T137/8593
摘要： Embodiments of chemical delivery systems disclosed herein may include an enclosure; a first compartment disposed within the enclosure and having a plurality of first conduits to carry a first set of chemical species, the first compartment further having a first draw opening and a first exhaust opening to facilitate flow of a purge gas through the first compartment; and a second compartment disposed within the enclosure and having a plurality of second conduits to carry a second set of chemical species, the second compartment further having a second draw opening and a second exhaust opening to facilitate flow of the purge gas through the second compartment, wherein the first set of chemical species is different than the second set of chemical species, and wherein a draw velocity of the purge gas through the second compartment is higher than the draw velocity of the purge gas through the first compartment.
摘要翻译： 本文公开的化学品递送系统的实施例可以包括外壳; 设置在所述外壳内并具有多个第一导管以承载第一组化学物质的第一隔室，所述第一隔室还具有第一抽吸开口和第一排气口，以促进吹扫气体流过所述第一隔室; 以及设置在所述外壳内并且具有多个第二导管以携带第二组化学物质的第二隔室，所述第二隔室还具有第二牵引开口和第二排气口，以促进所述吹扫气体流过所述第二隔室， 其中所述第一组化学物质不同于所述第二组化学物质，并且其中通过所述第二隔室的吹扫气体的抽吸速度高于通过所述第一隔室的吹扫气体的抽吸速度。
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20.发明授权Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber 失效在单晶片沉积室中使用六氯二硅烷形成含硅膜的方法公开(公告)号：US06884464B2
公开(公告)日：2005-04-26
申请号：US10288358
申请日：2002-11-04
申请人： Lee Luo , R. Suryanarayanan Iyer , Janardhanan Anand Subramony , Errol Antonio C. Sanchez , Xiaoliang Jin , Aihua Chen , Chang-Lian Yan , Nobuo Tokai , Yuji Maeda , Randhir P. Singh Thakur
发明人： Lee Luo , R. Suryanarayanan Iyer , Janardhanan Anand Subramony , Errol Antonio C. Sanchez , Xiaoliang Jin , Aihua Chen , Chang-Lian Yan , Nobuo Tokai , Yuji Maeda , Randhir P. Singh Thakur
IPC分类号： C23C16/24 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/205 , H01L21/314 , H01L21/316 , H01L21/318 , C23C16/22
CPC分类号： C23C16/45512 , C23C16/24 , C23C16/308 , C23C16/345 , C23C16/402 , C23C16/4411 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02271 , H01L21/02337 , H01L21/02381 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/3144 , H01L21/31612 , H01L21/3185
摘要： A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.
摘要翻译： 描述了包含硅的硅及其制造方法。 包含硅的膜在衬底上生长。 六氯二硅烷（HCD）源气体是用于形成含硅膜的反应物质之一。 包含硅的膜在10托和350托之间的压力下形成。
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