公开(公告)号：US07621281B2

公开(公告)日：2009-11-24

申请号：US11898233

申请日：2007-09-11

申请人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

发明人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

IPC分类号： C11D7/32

CPC分类号： C11D3/042 ,  C11D1/72 ,  C11D3/2075 ,  C11D11/0047

摘要： A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C): (A) an ethyleneoxide-type surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.5, the number (m) of carbon atoms is not less than 9, and the number (n) of oxyethylene groups is not less than 7; (B) water; and (C) alkali or an organic acid.

摘要翻译： 一种用于清洁半导体器件用基板的清洗液和使用上述清洗液的清洗方法，其至少包括以下成分（A），（B）和（C）：（A）含有烃的环氧乙烷型表面活性剂 可以具有除苯基以外的取代基的基团，以及其中烃基中所含的（m）个碳原子数（m）与（甲） 聚氧乙烯基的范围为1〜1.5，碳原子数（m）为9以上，氧化乙烯基的数（n）为7以上。 （B）水; 和（C）碱或有机酸。

公开(公告)号：US5446181A

公开(公告)日：1995-08-29

申请号：US140955

申请日：1993-10-25

申请人： Katsuhiro Uehara ,  Mikio Endo ,  Hitoyuki Araki ,  Takeo Arai ,  Yasuhiro Kawase

发明人： Katsuhiro Uehara ,  Mikio Endo ,  Hitoyuki Araki ,  Takeo Arai ,  Yasuhiro Kawase

IPC分类号： B01D3/00 ,  B01J8/02 ,  B01J19/24 ,  C07F7/18 ,  C07F7/10

CPC分类号： C07F7/1892 ,  B01D3/009 ,  B01J19/2415 ,  B01J8/02 ,  B01J2208/00061 ,  B01J2208/00176 ,  B01J2208/00247 ,  B01J2208/00557 ,  Y02P20/127

摘要： The invention produces a 3-[N-(2-aminoethyl)]aminopropylalkoxysilane in high yields by reacting a 3-chloropropylalkoxysilane with ethylene diamine. A distillation pot is charged with ethylene diamine and heated above the boiling point of ethylene diamine for evaporating ethylene diamine, which is then condensed into a liquid. The liquid ethylene diamine is mixed for reaction with a 3-chloropropylalkoxysilane in such a proportion to give a molar ratio of ethylene diamine/3-chloropropylalkoxysilane of at least 12/1, thereby forming a 3-[N-(2-aminoethyl)]aminopropylalkoxysilane. The reaction solution is fed back to the pot where the unreacted ethylene diamine in the reaction solution is evaporated again and then condensed for use in a next cycle of reaction. The apparatus includes a distillation pot, a reflux condenser, a feed means and a reactor connected to form a recirculating system.

摘要翻译： 本发明通过使3-氯丙基烷氧基硅烷与乙二胺反应，以高收率产生3- [N-（2-氨基乙基）]氨丙基烷氧基硅烷。 蒸馏釜中加入乙二胺并加热到乙二胺的沸点以蒸发乙二胺，然后将其冷凝成液体。 将液体乙二胺与3-氯丙基烷氧基硅烷按比例混合，得到至少12/1的乙二胺/ 3-氯丙基烷氧基硅烷的摩尔比，由此形成3- [N-（2-氨基乙基）] 氨丙基烷氧基硅烷。 将反应溶液反馈回锅中，反应溶液中的未反应的乙二胺再次蒸发，然后在下一个反应循环中冷凝。 该装置包括蒸馏罐，回流冷凝器，进料装置和连接以形成再循环系统的反应器。

公开(公告)号：US08642187B2

公开(公告)日：2014-02-04

申请号：US12521387

申请日：2007-12-21

申请人： Tadahiro Ohmi ,  Minoru Tahara ,  Yasuhiro Kawase

发明人： Tadahiro Ohmi ,  Minoru Tahara ,  Yasuhiro Kawase

IPC分类号： B32B15/00 ,  B32B15/01 ,  B32B15/04 ,  B32B15/10 ,  B32B9/00 ,  B32B19/00

CPC分类号： C23C8/02 ,  C23C14/165 ,  C23C14/5853 ,  C23C16/20 ,  C23C16/56 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/06 ,  C25D11/18 ,  H05K1/053 ,  H05K2203/0315

摘要： A structural member for a manufacturing apparatus has a metal base member mainly composed of aluminum, a high-purity aluminum film formed on the surface of the metal base member, and a nonporous amorphous aluminum oxide passivation film which is formed by anodizing the high-purity aluminum film. A method for producing a structural member for a manufacturing apparatus, includes forming a high-purity aluminum film on the surface of a metal base member mainly composed of aluminum, and anodizing the high-purity aluminum film in a chemical conversion liquid having a pH of 4-10 and containing a nonaqueous solvent, which has a dielectric constant lower than that of water and dissolves water, thereby converting at least a surface portion of the high-purity aluminum film into a nonporous amorphous aluminum oxide passivation film.

摘要翻译： 用于制造装置的结构件具有主要由铝构成的金属基底构件，在金属基底构件的表面上形成的高纯度铝膜和通过阳极氧化高纯度形成的无孔非晶态氧化铝钝化膜 铝膜。 一种制造装置用结构构件的制造方法，其特征在于，在主要由铝构成的金属基材的表面上形成高纯度的铝膜，并将该高纯度的铝膜阳极氧化为pH为 并且含有介电常数低于水的非水溶剂，并溶解水，从而将高纯度铝膜的至少一部分表面部分转变为无孔非晶态氧化铝钝化膜。

公开(公告)号：US20100330390A1

公开(公告)日：2010-12-30

申请号：US12521387

申请日：2007-12-21

申请人： Tadahiro Ohmi ,  Minoru Tahara ,  Yasuhiro Kawase

发明人： Tadahiro Ohmi ,  Minoru Tahara ,  Yasuhiro Kawase

IPC分类号： B32B15/20 ,  C23C28/00

CPC分类号： C23C8/02 ,  C23C14/165 ,  C23C14/5853 ,  C23C16/20 ,  C23C16/56 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/06 ,  C25D11/18 ,  H05K1/053 ,  H05K2203/0315

摘要： A structural member for a manufacturing apparatus has a metal base member mainly composed of aluminum, a high-purity aluminum film formed on the surface of the metal base member, and a nonporous amorphous aluminum oxide passivation film which is formed by anodizing the high-purity aluminum film. A method for producing a structural member for a manufacturing apparatus, includes forming a high-purity aluminum film on the surface of a metal base member mainly composed of aluminum, and anodizing the high-purity aluminum film in a chemical conversion liquid having a pH of 4-10 and containing a nonaqueous solvent, which has a dielectric constant lower than that of water and dissolves water, thereby converting at least a surface portion of the high-purity aluminum film into a nonporous amorphous aluminum oxide passivation film.

摘要翻译： 用于制造装置的结构件具有主要由铝构成的金属基底构件，在金属基底构件的表面上形成的高纯度铝膜和通过阳极氧化高纯度形成的无孔非晶态氧化铝钝化膜 铝膜。 一种制造装置用结构构件的制造方法，其特征在于，在主要由铝构成的金属基材的表面上形成高纯度的铝膜，并将该高纯度的铝膜阳极氧化为pH为 并且含有介电常数低于水的非水溶剂，并溶解水，从而将高纯度铝膜的至少一部分表面部分转变为无孔非晶态氧化铝钝化膜。

公开(公告)号：US20080164151A1

公开(公告)日：2008-07-10

申请号：US11966417

申请日：2007-12-28

申请人： Tadahiro Ohmi ,  Minoru Tahara ,  Yasuhiro Kawase

发明人： Tadahiro Ohmi ,  Minoru Tahara ,  Yasuhiro Kawase

IPC分类号： C25D11/04

CPC分类号： C25D11/06 ,  C25D11/18 ,  C25D21/12

摘要： In a method of manufacturing a metal member, a metal material containing aluminum as a main component is anodized in an anodization solution having a pH of 4 to 10 and containing a nonaqueous solvent having a dielectric constant smaller than that of water and capable of dissolving water, thereby forming a nonporous amorphous aluminum oxide passivation film on a surface of the metal member. The method includes a step of controlling the viscosity of the anodization solution. In the step of controlling the viscosity, the viscosity of the anodization solution is lowered by elevating the temperature of the anodization solution above the room temperature or by adding to the anodization solution a substance having a dielectric constant smaller than that of water and a viscosity lower than that of the nonaqueous solvent.

摘要翻译： 在制造金属构件的方法中，以pH为4〜10的阳极氧化液阳极氧化含有铝作为主要成分的金属材料，并且含有比水的介电常数小的能够溶解水的非水溶剂 从而在金属构件的表面上形成无孔非晶态氧化铝钝化膜。 该方法包括控制阳极氧化溶液的粘度的步骤。 在控制粘度的步骤中，通过将阳极氧化溶液的温度升高到室温以上，阳极氧化溶液的粘度降低，或者通过向阳极氧化溶液中添加介电常数小于水的介电常数物质和较低的粘度的物质 比非水溶剂高。

公开(公告)号：US5698362A

公开(公告)日：1997-12-16

申请号：US818894

申请日：1997-03-17

申请人： Mineo Nishi ,  Koji Nakano ,  Makoto Ikemoto ,  Tadashi Kusumoto ,  Yasuhiro Kawase

发明人： Mineo Nishi ,  Koji Nakano ,  Makoto Ikemoto ,  Tadashi Kusumoto ,  Yasuhiro Kawase

IPC分类号： G03F7/004 ,  G03F7/022 ,  G03F7/023 ,  G03C1/61

CPC分类号： G03F7/0226 ,  G03F7/0045 ,  G03F7/022

摘要： A photosensitive resin composition comprising an alkali-soluble resin (A), a compound (B) containing a 1,2-quinonediazide group, and a compound (C) of the following formula (I): ##STR1## wherein each of Ar.sup.1 to Ar.sup.3 which are independent of one another, is an aromatic hydrocarbon group which may be substituted by a halogen atom, a C.sub.1-4 alkyl group or a C.sub.1-4 alkoxy group, and R is a hydrogen atom, a hydroxyl group, a C.sub.1-4 alkyl group or a C.sub.1-4 alkoxy group.

摘要翻译： 包含碱溶性树脂（A），含有1,2-醌二叠氮化物的化合物（B）和下式（I）的化合物（C））的光敏树脂组合物：其中各自 彼此独立的Ar 1〜Ar 3为可被卤素原子，C 1-4烷基或C 1-4烷氧基取代的芳香族烃基，R为氢原子，羟基， C 1-4烷基或C 1-4烷氧基。

公开(公告)号：US09476137B2

公开(公告)日：2016-10-25

申请号：US13463315

申请日：2012-05-03

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Hitoshi Morinaga ,  Yasuhiro Kawase ,  Masafumi Kitano ,  Fumikazu Mizutani ,  Makoto Ishikawa

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Hitoshi Morinaga ,  Yasuhiro Kawase ,  Masafumi Kitano ,  Fumikazu Mizutani ,  Makoto Ishikawa

IPC分类号： C25D11/06 ,  C25D11/18

CPC分类号： C25D11/06 ,  C25D11/18 ,  Y10T428/265

摘要： A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.

摘要翻译： 适用于主要由铝组成的金属保护金属氧化物膜。 金属氧化物膜包括厚度为10nm以上的主要由铝构成的金属的氧化物的膜，并且具有1E18mol / cm 2以下的膜的水分释放率。 此外，提供了一种制造金属氧化物膜的方法，其中主要由铝组成的金属在pH值为4至10的化学溶液中进行阳极氧化，以获得金属氧化物膜。

公开(公告)号：US20120240479A1

公开(公告)日：2012-09-27

申请号：US13514683

申请日：2010-11-18

申请人： Toshiro Doi ,  Syuhei Kurokawa ,  Osamu Ohnishi ,  Tadashi Hasegawa ,  Yasuhiro Kawase ,  Yasuhide Yamaguchi

发明人： Toshiro Doi ,  Syuhei Kurokawa ,  Osamu Ohnishi ,  Tadashi Hasegawa ,  Yasuhiro Kawase ,  Yasuhide Yamaguchi

IPC分类号： C09K3/14 ,  H01L21/304

CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09G1/02 ,  H01L21/02024 ,  H01L29/1608

摘要： The present invention provides an abrasive treatment technique capable of planarizing at an extremely high rate silicon carbide, which is thermally and chemically extremely stable and for which it is extremely difficult to efficiently perform an abrasive treatment. The present invention is a polishing slurry for silicon carbide wherein the polishing slurry includes a suspension liquid in which the pH thereof is 6.5 or more and manganese dioxide particles are suspended. The polishing slurry for silicon carbide is preferably a suspension in which manganese dioxide particles are suspended in an aqueous solution allowed to have a redox potential falling in a range enabling manganese to be present as manganese dioxide. The redox potential V of the polishing slurry preferably falls within the range specified by the following formula representing a relation between V and pH, pH being a variable: 1.014−0.591 pH≦V≦1.620−0.0743 pH

摘要翻译： 本发明提供一种能够以极高速率碳化硅平坦化的磨料处理技术，该碳化硅在热和化学上极其稳定，极难有效地进行研磨处理。 本发明是一种用于碳化硅的抛光浆料，其中抛光浆料包括其pH为6.5以上的悬浮液和二氧化锰颗粒悬浮。 用于碳化硅的抛光浆料优选是其中二氧化锰颗粒悬浮在允许氧化还原电位落在使锰以二氧化锰存在的范围内的水溶液中的悬浮液。 抛光浆料的氧化还原电位V优选落在由下式表示的范围内，表示V和pH之间的关系，pH是可变的：1.014-0.591 pH＆NlE; V＆lt; IL; 1.620-0.0743 pH

公开(公告)号：US07906004B2

公开(公告)日：2011-03-15

申请号：US11577144

申请日：2005-09-29

申请人： Fumikazu Mizutani ,  Toshiaki Sakakihara ,  Yasuhiro Kawase ,  Makoto Ishikawa

发明人： Fumikazu Mizutani ,  Toshiaki Sakakihara ,  Yasuhiro Kawase ,  Makoto Ishikawa

IPC分类号： C25D11/06 ,  C25D11/26

CPC分类号： C25D11/02 ,  C25D11/06 ,  C25D11/10 ,  C25D11/26

摘要： A high-quality oxide film which is free from a pinhole and surface roughing caused by anodic oxidation and which has surface smoothness on a surface of a material to be treated containing a metal as a principal component. An electrolyte solution which is used for forming an oxide film on a surface of a material to be treated containing a metal as a principal component by anodic oxidation, the electrolyte solution containing a non-aqueous solvent containing an alcoholic hydroxyl group and having 4 or more carbon atoms as a main solvent. This non-aqueous solvent preferably contains two or more alcoholic hydroxyl groups and is especially preferably one or two or more members selected from the group consisting of diethylene glycol, triethylene glycol and polyethylene glycol. A method of forming an oxide film including a step of anodically oxidizing a material to be treated containing a metal as a principal component in this electrolyte solution.

摘要翻译： 一种高品质的氧化膜，其不含针孔和由阳极氧化引起的表面粗糙化，并且在待处理的材料的表面上具有表面平滑度，其中含有金属作为主要成分。 一种用于在通过阳极氧化包含金属作为主要成分的待处理材料的表面上形成氧化物膜的电解质溶液，所述电解质溶液含有含有醇羟基且含有4个或更多个的羟基的非水溶剂 碳原子作为主要溶剂。 该非水溶剂优选含有两个以上的醇羟基，特别优选为选自二甘醇，三甘醇和聚乙二醇中的一种或两种以上的成分。 一种形成氧化膜的方法，包括在该电解质溶液中对含有金属作为主要成分的待处理材料进行阳极氧化的步骤。

公开(公告)号：US20100167972A1

公开(公告)日：2010-07-01

申请号：US12600545

申请日：2008-05-16

申请人： Yasuhiro Kawase ,  Makoto Ikemoto ,  Atsushi Itou ,  Matoko Ishikawa

发明人： Yasuhiro Kawase ,  Makoto Ikemoto ,  Atsushi Itou ,  Matoko Ishikawa

IPC分类号： C11D3/20

CPC分类号： H01L21/0206 ,  C11D3/2075 ,  C11D11/0047 ,  H01L21/02074

摘要： To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor.A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.

摘要翻译： 为了提供一种用于半导体器件用基板的清洗液，其具有除去颗粒，有机污染物，金属污染物以及附着在基板表面上的有机物和金属的复合污染物的能力优异，从而基板表面可以是高度的 清洁，不被腐蚀。 特别是提供一种清洁液，该清洗溶液清洁低介电常数（Low-k）材料的能力优异，其中由于疏水性而容易排斥液体并且其中去除颗粒的能力差。 一种半导体器件用基板用清洗液，其特征在于，含有以下成分（A）和（B）：（A）有机酸（B）HLB值为5〜13以下的非离子性表面活性剂。