Abstract:
Non-volatile memory devices according to embodiments of the present invention include an EEPROM transistor in a first portion of a semiconductor substrate, an access transistor in a second portion of the semiconductor substrate and an erase transistor in a third portion of the semiconductor substrate. The second portion of the semiconductor substrate extends adjacent a first side of the first portion of the semiconductor substrate and the third portion of the semiconductor substrate extends adjacent a second side of the first portion of the semiconductor substrate. The first and second sides of the first portion of the semiconductor substrate may be opposite sides of the first portion of the semiconductor substrate. The access transistor has a first source/drain terminal electrically connected to a first source/drain terminal of the EEPROM transistor and the erase transistor has a first source/drain terminal electrically connected to a second source/drain terminal of the access transistor.
Abstract:
A semiconductor chip including a substrate, a first data pad arranged on the substrate, and a first control/address pad arranged on the substrate, wherein the first data pad is arranged in an edge region of the substrate, and the first control/address pad is arranged in a center region of the substrate.
Abstract:
An embedded chip-on-chip package includes a printed circuit board having a recessed semiconductor chip mounting unit constituted by a recess in the printed circuit board and a circuit pattern at the bottom of the recess, a first semiconductor chip embedded in the recessed semiconductor chip mounting unit and electrically connected to the circuit pattern at the bottom of the recess, and a second semiconductor chip mounted to the recessed semiconductor chip mounting unit and electrically connected to the first semiconductor chip and the printed circuit board independently of each other.
Abstract:
A semiconductor package includes a main substrate, a semiconductor chip having a first side and a second side, the first side of the semiconductor chip disposed on the main substrate and electrically connected to the main substrate, and a conductive network formed on the second side of the semiconductor chip.
Abstract:
A mask blank includes a transparent substrate, a light shield layer formed on the upper surface of the transparent substrate, and a multi-functional protective layer formed on the light shield layer. To make a phase shift mask from the blank, the protective layer is patterned, and the light shield layer is etched using the protective layer pattern as an etch mask. The phase shift region is formed by etching a groove in the second region of the substrate while the protective layer pattern protects the light shield layer. Therefore, undesirable residue is prevented from forming at the bottom of the groove constituting the phase shift region. The method also entails patterning a photosensitive layer on the protective layer, and patterning the protective layer by using the patterned photosensitve layer as a mask. In this case, the structure is cleaned so that no residue remains on the exposed portions of the light shield layer.
Abstract:
An acousto-optic modulator including an ultrasonic medium for controlling light from an optical source through diffraction, two transducers each having one electrode formed on one side thereof, the electrodes being for generating an acousto-elastic wave, and a conductive adhesive layer interposed between the ultrasonic medium and each of the sides of the transducers opposite to the sides on which the electrodes are installed, in order to adhere each of the transducers to the ultrasonic medium.
Abstract:
An acousto-optic modulator comprised of an acousto-optic element coated with an anti-reflection layer, and a method of manufacturing the same, are provided. The acousto-optic modulator includes an anti-reflection layer, comprised of at least two coating layers having different refractive indices, formed on the light incident/emitting surface of an ultrasonic medium for modulating a light beam incident from an optical source.
Abstract:
An acousto-optic modulator having an ultrasonic medium for controlling light from a light source by diffracting the light and a transducer portion having electrodes for generating an acoustic wave in the ultrasonic medium, wherein the transducer portion includes two transducers each having an electrode. The AOM is provided with two electrodes by using two transducers, thereby facilitating impedance matching with a driver. The two transducers may be installed so that their polarization directions are opposite to each other, thereby obtaining maximum power transfer to the ultrasonic medium.