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42 条记录 (耗时 0.02 秒)

    Thin film magnetic head
    12.
    发明授权
    Thin film magnetic head 失效
    薄膜磁头

    公开(公告)号：US4881144A

    公开(公告)日：1989-11-14

    申请号：US142697

    申请日：1988-01-11

    申请人： Isamu Yuito ,  Eijin Moriwaki ,  Kazuo Shiiki ,  Yoshihiro Hamakawa ,  Hisashi Takano

    发明人： Isamu Yuito ,  Eijin Moriwaki ,  Kazuo Shiiki ,  Yoshihiro Hamakawa ,  Hisashi Takano

    IPC分类号： G11B5/31

    CPC分类号： G11B5/3163

    摘要： In a thin film magnetic head of the type wherein a lower magnetic pole, a gap layer, a first insulating layer, a coil, a second insulating layer and an upper magnetic pole are formed sequentially on a substrate, the present invention provides a thin film magnetic head characterized in that a surface active layer made of aluminum oxide, for example, is disposed between the first insulating layer and the second insulating layer except where the coil is formed on the first insulating layer so that the surface active layer is disposed between the coil and the second insulating layer. According to the present invention, it is possible to prevent the occurrence of bubbles between coil conductors, and eventually to improve flatness of the surface of the second insulating layer and to prevent degradation of the characteristics of the upper magnetic pole.

    摘要翻译： 在基板上依次形成下列磁极，间隙层，第一绝缘层，线圈，第二绝缘层和上磁极的薄膜磁头，本发明提供一种薄膜 磁头，其特征在于，例如在第一绝缘层和第二绝缘层之间设置由氧化铝制成的表面有源层，除了在第一绝缘层上形成线圈之外，表面活性层设置在第一绝缘层之间 线圈和第二绝缘层。 根据本发明，能够防止线圈导体之间产生气泡，最终提高第二绝缘层的表面的平坦性，防止上磁极的特性劣化。

    Color sensor with amorphous pin structure
    13.
    发明授权
    Color sensor with amorphous pin structure 失效
    带非晶针结构的彩色传感器

    公开(公告)号：US4820915A

    公开(公告)日：1989-04-11

    申请号：US105440

    申请日：1987-10-05

    申请人： Yoshihiro Hamakawa ,  Funio Koike ,  Tetsuya Miyagishi

    发明人： Yoshihiro Hamakawa ,  Funio Koike ,  Tetsuya Miyagishi

    IPC分类号： H01L27/14 ,  G01J3/02 ,  G01J3/50 ,  H01L31/075 ,  H01L31/11 ,  H01J40/14

    CPC分类号： H01L31/076 ,  H01L31/11 ,  Y02E10/548

    摘要： A color sensor has a layered body obtained by stacking a first photoelectric sensor which is constituted by an amorphous semiconductor having a "PIN" structure and a spectral sensitivity which has a peak with respect to blue light and a second photoelectric sensor which is constituted by an amorphous semiconductor having a "PIN" structure and a spectral sensitivity which has a peak with respect to red light, so that a p-n junction is formed therebetween, and a pair of electrodes with each of the electrodes being provided at a respective end of the body, at least one of the pair of electrodes being transparent. A color measuring apparatus uses the color sensor with a bias voltage supply for supplying three different bias voltages between the sensor and the pair of electrodes, a photo-current detector for detecting photo-currents for each bias voltage and a color discriminator for discriminating incident light color on the basis of the detected photo-currents.

    摘要翻译： 彩色传感器具有层叠体，该第一光电传感器由具有“PIN”结构的非晶半导体和与蓝色光具有峰值的光谱灵敏度构成的第一光电传感器和由 具有“PIN”结构的非晶半导体和具有相对于红光的峰值的光谱灵敏度，从而在它们之间形成pn结，并且一对电极中的每个电极设置在主体的相应端部 所述一对电极中的至少一个是透明的。 色彩测量装置使用具有偏置电压源的颜色传感器，用于在传感器和一对电极之间提供三个不同的偏置电压，用于检测每个偏置电压的光电流的光电流检测器和用于识别入射光的颜色鉴别器 基于检测到的光电流的颜色。

    Photovoltaic device
    15.
    发明授权
    Photovoltaic device 失效
    光伏装置

    公开(公告)号：US4496788A

    公开(公告)日：1985-01-29

    申请号：US528988

    申请日：1983-09-02

    申请人： Yoshihiro Hamakawa ,  Hiroaki Okamoto ,  Kouji Okuda

    发明人： Yoshihiro Hamakawa ,  Hiroaki Okamoto ,  Kouji Okuda

    IPC分类号： H01L31/0236 ,  H01L31/0368 ,  H01L31/078 ,  H01L31/06

    CPC分类号： H01L31/0236 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/078 ,  Y02E10/545 ,  Y02E10/548

    摘要： A photovoltaic device comprising at least one crystalline and one amorphous semiconductor region with different photosensitivity is provided to absorb light in a wide range of wavelength, and serves, for example, as a solar battery or a color sensor. Amorphous or microcrystalline semiconductor regions comprising those devices can be deposited easily and in a continuous manufacturing process by the use of a low temperature process, and this allows manufacture of a photovoltaic device at low cost.

    摘要翻译： 提供包括具有不同光敏性的至少一个晶体和一个非晶半导体区域的光电器件以吸收宽波长范围内的光，并且例如用作太阳能电池或颜色传感器。 包括那些器件的非晶或微晶半导体区域可以通过使用低温工艺容易地并且在连续制造工艺中沉积，并且这允许以低成本制造光伏器件。

    Method for manufacturing a solid state image sensing device
    16.
    发明授权
    Method for manufacturing a solid state image sensing device 失效
    固体摄像装置的制造方法

    公开(公告)号：US5976906A

    公开(公告)日：1999-11-02

    申请号：US733914

    申请日：1996-10-18

    申请人： Kenji Takada ,  Kouichi Ishida ,  Yoshihiro Hamakawa ,  Hiroaki Okamoto

    发明人： Kenji Takada ,  Kouichi Ishida ,  Yoshihiro Hamakawa ,  Hiroaki Okamoto

    IPC分类号： H01L27/148 ,  H01L31/0224 ,  H01L21/00

    CPC分类号： H01L31/022408 ,  H01L27/14806

    摘要： A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductive type relative to the first diffusion region and is provided in the first diffusion region, and a semiconductor thin layer provided on at least the second diffusion regions.

    摘要翻译： 一种固体摄像装置，具有半导体衬底，设置在半导体衬底上的正或负导电类型的第一扩散区域，多个第二扩散区域，每个第二扩散区域相对于第一扩散区域为相反的导电类型，并且是 设置在第一扩散区域中，以及设置在至少第二扩散区域上的半导体薄层。

    Multilayered magnetic films and thin-film magnetic heads using the same as a pole
    17.
    发明授权
    Multilayered magnetic films and thin-film magnetic heads using the same as a pole 失效
    使用与极相同的多层磁性膜和薄膜磁头

    公开(公告)号：US4814921A

    公开(公告)日：1989-03-21

    申请号：US150504

    申请日：1988-02-01

    申请人： Yoshihiro Hamakawa ,  Kazuo Shiiki ,  Yoshihiro Shiroishi ,  Isamu Yuitoo ,  Hitoshi Numasaka ,  Noriyuki Kumasaka ,  Shigekazu Otomo ,  Eijin Moriwaki

    发明人： Yoshihiro Hamakawa ,  Kazuo Shiiki ,  Yoshihiro Shiroishi ,  Isamu Yuitoo ,  Hitoshi Numasaka ,  Noriyuki Kumasaka ,  Shigekazu Otomo ,  Eijin Moriwaki

    IPC分类号： G11B5/31 ,  G11B5/127

    CPC分类号： G11B5/31

    摘要： Multilayered magnetic films of the invention comprising at least two unit magnetic films each of which has a thickness of from 0.05 to 0.9 .mu.m and includes a plurality of ferromagnetic layers each having a thickness of from 0.01 to 0.2 .mu.m and a 1 nm to 10 nm thick first intermediate layer consisting of a ferromagnetic, nonmagnetic or antiferromagnetic material and provided between adjacent ferromagnetic layers, and a second intermediate layer having a thickness of from 10 to 40 nm, consisting of a nonmagnetic or antiferromagnetic material and provided between the at least two unit magnetic films. The multilayered magnetic film is suitable as a pole of a thin-film magnetic head. An underlayer may be further provided between the magnetic film and a substrate whereby a multilayered magnetic film having good characteristics can be obtained.

    摘要翻译： 本发明的多层磁性膜包括至少两个单元磁性膜，每个单元磁性膜的厚度为0.05至0.9μm，并且包括多个铁磁层，每个铁磁层的厚度为0.01至0.2μm，1nm至10nm nm厚的第一中间层，由铁磁性，非磁性或反铁磁性材料构成，并且设置在相邻的铁磁层之间，以及厚度为10至40nm的第二中间层，由非磁性或反铁磁材料组成，并且设置在所述至少两个 单位磁膜。 多层磁性膜适合作为薄膜磁头的磁极。 可以在磁性膜和基板之间进一步设置底层，由此可以获得具有良好特性的多层磁性膜。

    Magnetic head made from amorphous magnetic film
    18.
    发明授权
    Magnetic head made from amorphous magnetic film 失效
    磁头由非晶磁性膜制成

    公开(公告)号：US4766039A

    公开(公告)日：1988-08-23

    申请号：US875222

    申请日：1986-06-17

    申请人： Shigekazu Otomo ,  Noriyuki Kumasaka ,  Noritoshi Saito ,  Takeo Yamashita ,  Kazuo Shiiki ,  Yoshihiro Hamakawa

    发明人： Shigekazu Otomo ,  Noriyuki Kumasaka ,  Noritoshi Saito ,  Takeo Yamashita ,  Kazuo Shiiki ,  Yoshihiro Hamakawa

    IPC分类号： G11B5/11 ,  G11B5/127 ,  G11B5/147 ,  G11B5/31 ,  G11B5/39 ,  H01F10/12 ,  H01F10/13 ,  H01F10/16

    CPC分类号： G11B5/11 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/31 ,  G11B5/39 ,  Y10S428/90

    摘要： A magnetic head comprising a magnetic film in at least a part of a magnetic circuit, at least a part of the magnetic film being formed in contact with, or being exposed to, an oxide or oxygen at least in a heating step at 150.degree. C. or higher in a process for preparing the magnetic head is disclosed. An amorphous alloy film for the magnetic film has the following composition formula to give distinguished head characteristics without any oxidation:Co.sub.a T.sub.b Zr.sub.c N.sub.dwhere T is at last one of Nb, Ta, W, Mo, V and Cr; N is at least one of Au, Pt and Ag; d.gtoreq.1, b>0, b.sub.1 +b.sub.2 +2c.gtoreq.10, a+d.gtoreq.80, -1.ltoreq.(3c-b.sub.1 -3b.sub.2 -5b.sub.3 -3b.sub.4 -4d)/(c+b.sub.1 +b.sub.2 +b.sub.3 +b.sub.4 +d).ltoreq.1, and a+b+c+d=100, where b.sub.1 is a Nb concentration, b.sub.2 is a Ta concentration, b.sub.3 is a W concentration, b.sub.4 is sum total of Mo, Cr and V concentrations and b=b.sub.1 +b.sub.2 +b.sub.3 +b.sub.4.

    摘要翻译： 磁头包括至少一部分磁路中的磁性膜，至少一部分磁性薄膜至少在150℃的加热步骤中与氧化物或氧气接触或暴露于氧化物或氧气中 公开了一种用于制备磁头的方法。 用于磁性膜的非晶态合金膜具有以下组成式，可以得到无特殊的头部特性：没有任何氧化：CoaTbZrcNd，其中T是Nb，Ta，W，Mo，V和Cr中的最后一个; N是Au，Pt和Ag中的至少一种; d> / = 1，b> 0，b1 + b2 + 2c> / = 10，a + d> / = 80，-1（3c-b1-3b2-5b3-3b4-4d）/（c + b1 + b2 + b3 + b4 + d）

    Method for production of semiconductor by glow discharge decomposition of silane
    20.
    发明授权
    Method for production of semiconductor by glow discharge decomposition of silane 失效
    通过硅烷辉光放电分解生产半导体的方法

    公开(公告)号：US4634601A

    公开(公告)日：1987-01-06

    申请号：US716302

    申请日：1985-03-26

    申请人： Yoshihiro Hamakawa ,  Hideo Yamagishi ,  Yoshihisa Tawada

    发明人： Yoshihiro Hamakawa ,  Hideo Yamagishi ,  Yoshihisa Tawada

    IPC分类号： H01L31/04 ,  C23C16/24 ,  C23C16/509 ,  H01L21/205 ,  B05D3/06 ,  B05D5/12

    CPC分类号： C23C16/24 ,  C23C16/509 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262

    摘要： The production of a semiconductor by the glow discharge decomposition of a silane type gas is accomplished advantageously by a method which comprises effecting the glow discharge decomposition of introduced silane type gas with a plurality of opposed electrodes disposed substantially perpendicularly to a substrate and insulated from the ground potential and subsequently allowing the product of the decomposition to be deposited on the substrate disposed so as to be exposed to the introduced silane type gas. The semiconductor obtained by this method is free from the drawbacks suffered by the conventional method using a power source of high frequency.

    摘要翻译： 通过硅烷型气体的辉光放电分解来制造半导体有利地通过一种方法实现，该方法包括：引入硅烷型气体的辉光放电分解与基本上垂直于基板设置并与地绝缘的多个相对电极 并且随后允许分解产物沉积在被设置为暴露于引入的硅烷型气体的基板上。 通过该方法获得的半导体没有使用高频电源的常规方法所遭受的缺陷。