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    Through-substrate via and method for manufacturing a through-substrate via
    11.
    发明授权
    Through-substrate via and method for manufacturing a through-substrate via 有权

    公开(公告)号：US12211769B2

    公开(公告)日：2025-01-28

    申请号：US17639736

    申请日：2020-08-27

    Applicant: ams AG

    Inventor： Georg Parteder ,  Jochen Kraft ,  Stefan Jessenig

    IPC: H01L23/48 ,  H01L21/768

    Abstract: An open through-substrate via, TSV, comprises an insulation layer disposed adjacent to at least a portion of side walls of a trench and to a surface of a substrate body. The TSV further comprises a metallization layer disposed adjacent to at least a portion of the insulation layer and to at least a portion of a bottom wall of said trench, a redistribution layer disposed adjacent to at least a portion of the metallization layer and a portion of the insulation layer disposed adjacent to the surface, and a capping layer disposed adjacent to at least a portion of the metallization layer and to at least a portion of the redistribution layer. The insulation layer and/or the capping layer comprise sublayers that are distinct from each other in terms of material properties. A first of the sublayers is disposed adjacent to at least a portion of the side walls and to at least a portion of the surface and a second of the sublayers is disposed adjacent to at least a portion of the surface.

    PHOTOTHERMAL GAS DETECTOR INCLUDING AN INTEGRATED ON-CHIP OPTICAL WAVEGUIDE
    12.
    发明申请
    PHOTOTHERMAL GAS DETECTOR INCLUDING AN INTEGRATED ON-CHIP OPTICAL WAVEGUIDE 有权

    公开(公告)号：US20220244168A1

    公开(公告)日：2022-08-04

    申请号：US17617750

    申请日：2020-07-09

    Applicant: ams AG

    Inventor： Jochen Kraft ,  Rainer Minixhofer ,  Victor Sidorov ,  Anderson Singulani ,  Martin Sagmeister ,  Fernando Castano

    IPC: G01N21/17 ,  G01N33/00

    Abstract: An apparatus includes an integrated waveguide structure, and a first light source operable to produce a probe beam having a first wavelength, wherein the probe beam is coupled into a first end of the waveguide structure. A second light source is operable to produce an excitation beam with having a second wavelength to excite gas molecules in close proximity to a path of the probe beam. A light detector is coupled to a second end of the integrated waveguide structure and is operable to detect the probe beam after it passes through the waveguide structure. The apparatus is operable such that excitation of the gas molecules results in a temperature increase of the gas molecules that induces a change in the probe beam that is measurable by the light detector.

    Crack-resistant semiconductor devices
    13.
    发明授权
    Crack-resistant semiconductor devices 有权

    公开(公告)号：US11127656B2

    公开(公告)日：2021-09-21

    申请号：US16483884

    申请日：2018-02-14

    Applicant: ams AG

    Inventor： Jochen Kraft ,  Georg Parteder ,  Anderson Singulani ,  Raffaele Coppeta ,  Franz Schrank

    IPC: H01L23/48 ,  H01L23/52 ,  H01L23/528 ,  H01L23/00

    Abstract: A semiconductor device comprises a semiconductor body and an electrically conductive via which extends through at least a part of the semiconductor body, where the via has a lateral size which is given in a first lateral direction that is perpendicular to a vertical direction given by the main axis of extension of the via and where the via has a top side and a bottom side that faces away from the top side. The semiconductor device further comprises an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to the first lateral direction, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the first lateral direction. The lateral extent in the first lateral direction of the etch-stop layer is larger than the lateral size of the via and the lateral extent in the first lateral direction of the contact layer is smaller than the lateral size of the via. Furthermore, the etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction.

    CHEMICAL SENSING DEVICE USING FLUORESCENT SENSING MATERIAL
    15.
    发明申请
    CHEMICAL SENSING DEVICE USING FLUORESCENT SENSING MATERIAL 审中-公开

    公开(公告)号：US20200284727A1

    公开(公告)日：2020-09-10

    申请号：US16766179

    申请日：2018-11-28

    Applicant: ams AG

    Inventor： Martin Sagmeister ,  Victor Sidorov ,  Jochen Kraft

    IPC: G01N21/64 ,  G01N21/77 ,  G02B6/12

    Abstract: The chemical sensing device comprises a substrate of semiconductor material, integrated circuit components and a photodetector formed in the substrate, a dielectric on the substrate, a wiring in the dielectric, and a source of electromagnetic radiation, a waveguide and a fluorescent sensor layer arranged in or above the dielectric. A portion of the waveguide is arranged to allow the electromagnetic radiation emitted by the source of electromagnetic radiation to be coupled into the waveguide. A further portion of the waveguide is arranged between the photodetector and the fluorescent sensor layer.

    Semiconductor Device
    16.
    发明申请
    Semiconductor Device 审中-公开

    公开(公告)号：US20200020611A1

    公开(公告)日：2020-01-16

    申请号：US16483884

    申请日：2018-02-14

    Applicant: ams AG

    Inventor： Jochen Kraft ,  Georg Parteder ,  Anderson Singulani ,  Raffaele Coppeta ,  FRANZ SCHRANK

    IPC: H01L23/48 ,  H01L23/528 ,  H01L23/00

    Abstract: A semiconductor device comprises a semiconductor body and an electrically conductive via which extends through at least a part of the semiconductor body, where the via has a lateral size which is given in a first lateral direction that is perpendicular to a vertical direction given by the main axis of extension of the via and where the via has a top side and a bottom side that faces away from the top side. The semiconductor device further comprises an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to the first lateral direction, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the first lateral direction. The lateral extent in the first lateral direction of the etch-stop layer is larger than the lateral size of the via and the lateral extent in the first lateral direction of the contact layer is smaller than the lateral size of the via. Furthermore, the etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction.

    Method of producing a semiconductor device having an interconnect through the substrate
    19.
    发明授权
    Method of producing a semiconductor device having an interconnect through the substrate 有权
    制造具有穿过该衬底的互连的半导体器件的方法

    公开(公告)号：US08969193B2

    公开(公告)日：2015-03-03

    申请号：US13956274

    申请日：2013-07-31

    Applicant: ams AG

    Inventor： Jochen Kraft ,  Franz Schrank ,  Martin Schrems

    IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/48

    CPC classification number: H01L21/76898 ,  H01L21/76831 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor substrate (1) is provided on a main surface (14) with an intermetal dielectric (4) including metal planes (5) and on an opposite rear surface (15) with an insulation layer (2) and an electrically conductive connection pad (7). An etch stop layer (6) is applied on the intermetal dielectric to prevent a removal of the intermetal dielectric above the metal planes during subsequent method steps. An opening (9) having a side wall (3) and a bottom (13) is formed from the main surface through the substrate above the connection pad. A side wall spacer (10) is formed on the side wall by a production and subsequent partial removal of a dielectric layer (11). The insulation layer is removed from the bottom to uncover an area of the connection pad. A metal layer is applied in the opening and is provided for an interconnect through the substrate.

    Abstract translation: 在具有包括金属平面（5）的金属间电介质（4）和具有绝缘层（2）的相对后表面（15）的主表面（14）上设置半导体基板（1）和导电连接垫 （7）。 在金属间电介质上施加蚀刻停止层（6），以防止在随后的方法步骤期间去除金属平面之上的金属间电介质。 具有侧壁（3）和底部（13）的开口（9）通过连接垫上方的基板从主表面形成。 通过产生并随后部分去除电介质层（11），在侧壁上形成侧壁间隔物（10）。 绝缘层从底部移除以露出连接垫的一个区域。 金属层被施加在开口中并且被提供用于通过基底的互连。

    SEMICONDUCTOR DEVICE WITH INTERNAL SUBSTRATE CONTACT AND METHOD OF PRODUCTION
    20.
    发明申请
    SEMICONDUCTOR DEVICE WITH INTERNAL SUBSTRATE CONTACT AND METHOD OF PRODUCTION 有权
    具有内部基板接触的半导体器件和生产方法

    公开(公告)号：US20140367862A1

    公开(公告)日：2014-12-18

    申请号：US14373627

    申请日：2013-01-16

    Applicant: ams AG

    Inventor： Jochen Kraft ,  Jordi Teva ,  Cathal Cassidy ,  Günther Koppitsch

    IPC: H01L23/522 ,  H01L21/768

    CPC classification number: H01L23/5226 ,  H01L21/743 ,  H01L21/76877 ,  H01L21/76898 ,  H01L2224/02372

    Abstract: The semiconductor device comprises a substrate (1) of semiconductor material, a contact hole (2) reaching from a surface (10) into the substrate, and a contact metallization (12) arranged in the contact hole, so that the contact metallization forms an internal substrate contact (4) on the semiconductor material at least in a bottom area (40) of the contact hole.

    Abstract translation: 半导体器件包括半导体材料的衬底（1），从表面（10）到达衬底的接触孔（2）和布置在接触孔中的接触金属化（12），使得接触金属化形成 至少在所述接触孔的底部区域（40）中的所述半导体材料上的内部衬底接触（4）。

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