公开(公告)号：US10134617B2

公开(公告)日：2018-11-20

申请号：US14583346

申请日：2014-12-26

申请人： Veeco Instruments, Inc

发明人： Alexander I. Gurary ,  Eric Armour

IPC分类号： H01L21/673 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687

摘要： The invention relates generally to semiconductor fabrication technology and, more particularly, to chemical vapor deposition (CVD) processing and associated apparatus for addressing temperature non-uniformities on semiconductor wafer surfaces. Embodiments include a wafer carrier for use in a system for growing epitaxial layers on one or more wafers by CVD, the wafer carrier comprising a top plate and base plate which function coordinately to reduce temperature variability caused during CVD processing.

公开(公告)号：USD806046S1

公开(公告)日：2017-12-26

申请号：US29587929

申请日：2016-12-16

申请人： Veeco Instruments Inc.

设计人： Alexander Gurary ,  Mandar Deshpande ,  Aniruddh Parekh ,  Yuliy Rashkovsky

CPC分类号： H01L21/68771 ,  C23C16/4584 ,  H01L21/68721 ,  H01L21/68764

摘要： A wafer carrier including thirty-five pockets arranged on a top surface, configured to be used with a chemical vapor deposition device, is provided. The wafer carrier comprises: a body having a top surface and a bottom surface arranged opposite one another, and a plurality of pockets defined in the top surface of the wafer carrier, wherein the plurality of pockets consist of a total of thirty-five pockets, each of the pockets is arranged along one of three circles, and the three circles are concentric with one another and with a circular outline formed by a perimeter of the top surface.

公开(公告)号：USD793971S1

公开(公告)日：2017-08-08

申请号：US29522212

申请日：2015-03-27

申请人： Veeco Instruments Inc.

设计人： Sandeep Krishnan ,  Raghu Moorkannaiah

CPC分类号： H01L21/68771 ,  C23C16/4584 ,  H01L21/68764

摘要： A wafer carrier including fourteen pockets arranged on a top surface.

公开(公告)号：US09653340B2

公开(公告)日：2017-05-16

申请号：US13483354

申请日：2012-05-30

申请人： Vadim Boguslavskiy ,  Joshua Mangum ,  Matthew King ,  Earl Marcelo ,  Eric A. Armour ,  Alexander I. Gurary ,  William E. Quinn ,  Guray Tas

发明人： Vadim Boguslavskiy ,  Joshua Mangum ,  Matthew King ,  Earl Marcelo ,  Eric A. Armour ,  Alexander I. Gurary ,  William E. Quinn ,  Guray Tas

IPC分类号： C23C16/52 ,  G01N21/71 ,  H01L21/687 ,  G01N21/75 ,  G01N23/20 ,  H01L21/67 ,  C23C16/458 ,  C23C16/46 ,  G01N21/74 ,  G01N21/17

CPC分类号： H01L21/68764 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  G01N21/71 ,  G01N21/75 ,  G01N23/20033 ,  G01N2021/1731 ,  G01N2021/745 ,  H01L21/67109 ,  H01L21/68771

摘要： An apparatus includes a carrier rotatable about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer and a surface characterization tool which is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation. The surface characterization tool is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation and is further adapted to produce characterization signals over the plurality of positions on at least a portion of the carrier and/or on at least a portion of said major surface of the wafer as the carrier rotates.

公开(公告)号：US09627239B2

公开(公告)日：2017-04-18

申请号：US14725997

申请日：2015-05-29

申请人： Veeco Instruments, Inc.

发明人： Daewon Kwon

IPC分类号： G01N21/956 ,  H04N5/225 ,  H01L21/67 ,  G01B11/06 ,  G01B11/00 ,  C23C16/458 ,  C23C16/52

CPC分类号： H01L21/67288 ,  C23C16/303 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  G01B11/002 ,  G01B11/0608 ,  H01L21/67259

摘要： The surface topography of at least one wafer can be determined in-situ based on deflectometer measurements of surface tilt. The deflectometer is re-positioned by a scanning positioner to facilitate tilt mapping of the wafer surface for each of the at least one wafer. A surface height mapping engine is configured to generate a three-dimensional topographic mapping of the surface of each of the at least one wafer based on the mapping of the tilt.

公开(公告)号：US09593434B2

公开(公告)日：2017-03-14

申请号：US14255016

申请日：2014-04-17

申请人： Veeco Instruments Inc.

发明人： Michael Murphy ,  Richard Hoffman ,  Jonathan Cruel ,  Lev Kadinski ,  Jeffrey C. Ramer ,  Eric A. Armour

IPC分类号： C30B25/14 ,  C23C16/455 ,  C23C16/458 ,  C30B25/16 ,  C30B25/08 ,  C30B25/12 ,  C23C16/52

CPC分类号： C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

摘要： In a rotating disk reactor (1) for growing epitaxial layers on substrate (3), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis (10a) may include a higher concentration of a reactant gas (4) than the gas directed toward portions of the disk close to the axis (10d), so that portions of the substrate surfaces at different distances from the axis (14) receive substantially the same amount of reactant gas (4) per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.

摘要翻译： 在用于在衬底（3）上生长外延层的旋转盘式反应器（1）中，在与盘旋转轴线不同的径向距离处朝向衬底的气体具有基本上相同的速度。 指向远离轴线（10a）的盘的部分的气体可以包括比指向靠近轴线（10d）的盘的部分的气体更高浓度的反应气体（4），使得衬底的部分 与轴（14）不同距离的表面每单位面积接收基本相同量的反应气体（4）。 在反应器内实现期望的流动模式，同时允许外延层在衬底上的均匀沉积和生长。

公开(公告)号：US09324590B2

公开(公告)日：2016-04-26

申请号：US12967381

申请日：2010-12-14

申请人： Alex Gurary ,  Mikhail Belousov ,  Vadim Boguslavskiy ,  Bojan Mitrovic

发明人： Alex Gurary ,  Mikhail Belousov ,  Vadim Boguslavskiy ,  Bojan Mitrovic

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/687

CPC分类号： H01L22/26 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/68785 ,  H01L21/68792

摘要： Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

摘要翻译： 晶片处理工艺和设备设置有晶片载体，其布置成保持晶片并将填充气体注入到晶片和晶片载体之间的间隙中。 该装置被布置成改变填充气体的组成，流速或两者，以便抵消晶片的不期望的温度不均匀图案。

公开(公告)号：US09273395B2

公开(公告)日：2016-03-01

申请号：US12951361

申请日：2010-11-22

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

摘要翻译： 诸如旋转盘式反应器（10）的MOCVD反应器装备有具有布置在相邻气体入口之间的扩散器（129）的气体注入头。 扩散器沿下游方向逐渐变细。 喷射头理想地具有用于第一气体的入口（117），例如设置在径向排的金属烷基，其从反应器壁径向向内终止，以最小化反应物在反应器壁上的沉积。 喷射头理想地还具有用于第二气体（例如布置在第一气体入口排之间的场中的氨）的入口（125），并且还具有用于与旋转轴线共轴的第二气体的中心入口（135）。

公开(公告)号：US08958061B2

公开(公告)日：2015-02-17

申请号：US13483491

申请日：2012-05-30

申请人： Vadim Boguslavskiy ,  Joshua Mangum ,  Matthew King ,  Earl Marcelo ,  Eric A. Armour ,  Alexander I. Gurary ,  William E. Quinn ,  Guray Tas

发明人： Vadim Boguslavskiy ,  Joshua Mangum ,  Matthew King ,  Earl Marcelo ,  Eric A. Armour ,  Alexander I. Gurary ,  William E. Quinn ,  Guray Tas

IPC分类号： G01N21/00 ,  H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52

CPC分类号： H01L21/68764 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  G01N21/71 ,  G01N21/75 ,  G01N23/20033 ,  G01N2021/1731 ,  G01N2021/745 ,  H01L21/67109 ,  H01L21/68771

摘要： A method for characterizing a surface comprises rotating a carrier about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer with a major surface of the wafer extending generally transverse to the axis of rotation. A surface characterization tool is moved over a plurality of positions relative to the top surface of the carrier, where a measurement location over the top surface of the carrier is changed while said top surface of the carrier is heated to a predetermined temperature. Characterization signals over the plurality of positions with the surface characterization tool are produced and contain information about the heated top surface of the carrier, or when semiconductor wafers are held on the carrier, information about the semiconductor wafer can also be obtained.

摘要翻译： 用于表征表面的方法包括围绕旋转轴旋转载体，其中载体具有适于保持至少一个半导体晶片的顶表面，其中晶片的主表面大致横向于旋转轴线延伸。 表面表征工具相对于载体的顶表面在多个位置上移动，其中载体顶表面上的测量位置改变，同时载体的顶表面被加热到预定温度。 产生具有表面表征工具的多个位置上的表征信号，并且包含关于载体的加热的顶表面的信息，或者当半导体晶片被保持在载体上时，也可以获得关于半导体晶片的信息。

公开(公告)号：US20140261698A1

公开(公告)日：2014-09-18

申请号：US13827495

申请日：2013-03-14

申请人： VEECO INSTRUMENTS INC.

发明人： Sandeep Krishnan ,  Alexander I. Gurary ,  Keng Moy

IPC分类号： C30B25/12 ,  C30B25/10

CPC分类号： C30B25/12 ,  C23C16/458 ,  C23C16/4586 ,  C30B25/10 ,  C30B29/40 ,  Y10T137/0318

摘要： Wafer carrier arranged to hold a plurality wafers and to inject a fill gas into gaps between the wafers and the wafer carrier for enhanced heat transfer and to promote uniform temperature of the wafers. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers. In various embodiments, the wafer carrier utilizes at least one plenum structure contained within the wafer carrier to source a plurality of weep holes for passing a fill gas into the wafer retention pockets of the wafer carrier. The plenum(s) promote the uniformity of the flow, thus providing efficient heat transfer and enhanced uniformity of wafer temperatures.

摘要翻译： 晶片载体布置成保持多个晶片并且将填充气体注入到晶片和晶片载体之间的间隙中，以增强热传递并促进晶片的均匀温度。 该装置被布置成改变填充气体的组成，流速或两者，以便抵消晶片的不期望的温度不均匀图案。 在各种实施例中，晶片载体利用包含在晶片载体内的至少一个增压室结构来源出多个用于使填充气体进入晶片载体的晶片保持腔的漏孔。 增压室促进流动的均匀性，从而提供有效的热传递和提高晶圆温度的均匀性。