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    Optical beam modulating system implementing the use of continuous tunable QWIMs
    15.
    发明申请
    Optical beam modulating system implementing the use of continuous tunable QWIMs 有权
    实现使用连续可调QWIM的光束调制系统

    公开(公告)号：US20040095627A1

    公开(公告)日：2004-05-20

    申请号：US10698877

    申请日：2003-10-30

    Inventor： John S. Ahearn ,  Mani Sundaram ,  Axel Reisinger

    IPC: G02F001/01

    CPC classification number: B82Y20/00 ,  G02F1/017 ,  G02F1/01725 ,  G02F1/292 ,  G02F1/2955 ,  G02F2001/01758 ,  G02F2001/01775 ,  G02F2201/30 ,  G02F2201/305 ,  G02F2202/101 ,  G02F2203/50 ,  H01S3/005 ,  H01S5/005 ,  H01S5/4075

    Abstract: The present invention relates to an optical modulator array that uses stepped-well continuously tunable quantum well infrared modulators in order to accomplish electronic beam modulating. The present invention involves a coherent optical beam modulating device to steer an optical beam comprising: an optical modulator array, where said optical modulator array includes a stepped quantum well doped with electrons, wherein the modulator array affects operates as at least one of a phase modulator and a light intensity modulator base upon a voltage bias applied across the modulator array. The continuous tunable quantum well modulator includes asymmetry of the unit cell that allows transitions from the ground state to the second excited state that are normally forbidden in symmetrical quantum well infrared photodetectors.

    Abstract translation: 本发明涉及一种使用阶梯式井连续可调量子阱红外调制器以实现电子束调制的光调制器阵列。 本发明涉及一种用于转向光束的相干光束调制装置，包括：光调制器阵列，其中所述光调制器阵列包括掺杂有电子的阶梯量子阱，其中所述调制器阵列影响作为相位调制器 以及基于施加在调制器阵列上的电压偏置的光强度调制器。 连续可调量子阱调制器包括允许在对称量子阱红外光电探测器中通常被禁止的从基态到第二激发态的跃迁的单位电池的不对称性。

    Tilted valance-band quantum well double heterostructures for single step active and passive optical waveguide device monolithic integration
    16.
    发明授权
    Tilted valance-band quantum well double heterostructures for single step active and passive optical waveguide device monolithic integration 失效
    用于单步有源和无源光波导器件单片集成的倾斜带隙量子阱双异质结构

    公开(公告)号：US5953479A

    公开(公告)日：1999-09-14

    申请号：US74220

    申请日：1998-05-07

    Applicant: Weimin Zhou ,  Paul W. Cooke

    Inventor： Weimin Zhou ,  Paul W. Cooke

    IPC: G02F1/017 ,  H01S5/34 ,  H01S5/343 ,  H01S5/50 ,  G02B6/10 ,  H01S3/19

    CPC classification number: B82Y20/00 ,  G02F1/01725 ,  H01S5/34313 ,  G02F2001/01758 ,  H01S5/3408 ,  H01S5/34306 ,  H01S5/50

    Abstract: Opto-electronic integrated waveguide devices are provided using a tilted valence band quantum well semiconductor double heterostructure with one growth of the same waveguide material, that operate simply by their normal operating forward bias for active waveguides with optical gain and operating in a reverse or no bias for active waveguide without optical gain or passive waveguides. The optical waveguides comprise a substrate, a bottom cladding layer, a core layer having a quantum well optical waveguiding double heterostructure and a top cladding layer. The quantum well optical waveguiding double heterostructure includes an InGaPAs first barrier layer atop the bottom cladding layer, a quantum well layer constructed of InxGa1.sub.-x-y Al.sub.y As is stacked on top of the first barrier layer which is graded from one side to the other forming a linearly increasing quantum well energy bandgap and an In.sub..52 AlGaAs second barrier layer is stacked on top of said quantum well core layer. The quantum well layer provides a first conduction band offset ratio at a first interface point smaller than a second conduction band offset ratio at a second interface point, as well as a valence band being tilted, with the first barrier layer energy bandgap being greater than the quantum well energy bandgap, and the quantum well energy bandgap being lesser than said second barrier layer energy bandgap. The first barrier layer, quantum well layer and second barrier layer can be coextensive with one another.

    Abstract translation: 使用具有相同波导材料的一个生长的倾斜价带量子阱半导体双异质结构提供光电子集成波导器件，其通过其具有光学增益的有源波导的正常运行正向偏压而工作，并以反向或无偏压运行 用于无光增益或无源波导的有源波导。 光波导包括基底，底部包层，具有量子阱光波导双异质结构的核心层和顶部覆层。 量子阱光波导双异质结构包括在底包层上方的InGaPAs第一阻挡层，由InxGa1-x-yAlyAs构成的量子阱层堆叠在第一势垒层的顶部，该第一势垒层从一侧到另一侧分级形成 线性增加的量子阱能带隙和In.52AlGaAs第二阻挡层堆叠在所述量子阱核心层的顶部。 量子阱层在第二界面处的第一界面处提供小于第二导带偏移比的第一导带偏移比，以及倾斜的价带，其中第一势垒层的能带隙大于 量子阱能量带隙，并且量子阱能量带隙小于所述第二势垒层能带隙。 第一阻挡层，量子阱层和第二阻挡层可以彼此共同延伸。

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