公开(公告)号：US20130153779A1

公开(公告)日：2013-06-20

申请号：US13701291

申请日：2011-06-01

Applicant: Frank Torregrosa ,  Laurent Roux

Inventor： Frank Torregrosa ,  Laurent Roux

IPC: G01T1/02

CPC classification number: G01T1/02 ,  H01J37/244 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32935 ,  H01J2237/24405 ,  H01J2237/2448 ,  H01J2237/31703

Abstract: The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons.

Abstract translation: 本发明涉及一种用于离子注入的剂量测量装置，该装置包括用于估计注入电流的模块CUR，二次电子检测器DSE和用于通过将所述注入电流和 来自所述二次电子检测器的电流。 此外，所述高能二次电子检测器包括：收集器COL，P，其支承正好三个相互绝缘的电极：第一斥力电极G1，A1，T1，用于排斥预定符号的待排斥电荷，所述电极设置在 用于通过电子的至少一个孔口; 第二排斥电极G2，A2，T2，用于排斥相反符号的要排斥的电荷，所述电极还设置有至少一个用于通过电子的孔口; 以及选择电极G3，A3，T3，该电极还设置有用于使电子通过的至少一个孔。

公开(公告)号：US20130023069A1

公开(公告)日：2013-01-24

申请号：US13638792

申请日：2011-03-28

Applicant: Isao Yokokawa

Inventor： Isao Yokokawa

IPC: H01L21/66

CPC classification number: H01L21/265 ,  H01J37/3005 ,  H01J37/3171 ,  H01J2237/2445 ,  H01J2237/31703 ,  H01L22/12

Abstract: A method for checking an ion implantation condition when ions are implanted over an entirety of one surface of a semiconductor wafer having an insulator film on the one surface, the method including checking whether the ions are implanted over the entirety of the one surface of the semiconductor wafer by directly or indirectly observing light emitted when the one surface of the semiconductor wafer is irradiated with an ion beam of the implanted ions throughout the ion implantation.

Abstract translation: 一种表面上具有绝缘膜的半导体晶片的整个表面上离子注入离子注入条件的方法，该方法包括检查离子是否被注入到半导体的整个表面上 晶片通过直接或间接观察在半导体晶片的一个表面在离子注入期间被注入的离子的离子束照射时发出的光。

公开(公告)号：US20130009075A1

公开(公告)日：2013-01-10

申请号：US13177621

申请日：2011-07-07

Applicant: Boon-Chau TONG

Inventor： Boon-Chau TONG

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/16 ,  H01J2237/0268 ,  H01J2237/028 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: A beam line system includes a hollow tube and a plurality of protruding structures. The hollow tube has an inlet and an outlet. An ion beam emitted by the ion implanter is introduced into the hollow tube through the inlet and exited from the hollow tube through the outlet. The protruding structures are formed on an inner wall of the hollow tube. Each of the protruding structures has a reflective surface for reflecting a portion of the ion beam.

Abstract translation: 束线系统包括中空管和多个突出结构。 中空管具有入口和出口。 由离子注入机发射的离子束通过入口引入中空管，并通过出口从中空管中排出。 突出结构形成在中空管的内壁上。 每个突出结构具有用于反射离子束的一部分的反射表面。

公开(公告)号：US08309444B2

公开(公告)日：2012-11-13

申请号：US12831699

申请日：2010-07-07

Applicant: Keung Hui ,  Chun-Lin Chang ,  Jong-I Mou

Inventor： Keung Hui ,  Chun-Lin Chang ,  Jong-I Mou

IPC: H01L21/425

CPC classification number: C23C14/48 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30461 ,  H01J2237/31703 ,  H01L21/265 ,  H01L22/14

Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.

Abstract translation: 公开了一种用于控制剂量分布的系统和方法。 一个实施例包括将晶片分离成网格阵列的组件，并且基于测试来分配每个网格组件所需的剂量分布，以补偿晶片的不同区域之间的拓扑差异。 期望的剂量被分解为定向剂量组分，并且定向剂量组分转化成用于离子注入机的离子束的扫描速度。 速度可以被馈送到离子注入机中以控制晶片到光束的速度，从而控制注入。

公开(公告)号：US08124947B2

公开(公告)日：2012-02-28

申请号：US12554277

申请日：2009-09-04

Applicant: Manny Sieradzki ,  Patrick Splinter ,  Bo H Vanderberg

Inventor： Manny Sieradzki ,  Patrick Splinter ,  Bo H Vanderberg

IPC: H01J37/317 ,  H01J29/51 ,  G21K1/08

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/20228 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/31706

Abstract: A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.

Abstract translation: 提供了一种用于在多个工作范围内将离子注入工件的系统和方法。 提供所需的离子剂量，并且由离子源形成点离子束，并通过质量分析器进行质量分析。 基于所需的离子剂量，将离子以第一模式和第二模式中的一种注入到工件中，其中在第一模式中，离子束由位于质量分析器下游的束扫描系统扫描，并由 位于光束扫描系统下游的并联器。 在第一模式中，工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。 在第二模式中，离子束通过光束扫描系统，并行扫描未扫描，工件通过点离子束二维扫描。

公开(公告)号：US08110820B2

公开(公告)日：2012-02-07

申请号：US12300172

申请日：2007-06-13

Applicant: Hilton F. Glavish ,  Dale C. Jacobson ,  Sami K. Hahto ,  Thomas N. Horsky

Inventor： Hilton F. Glavish ,  Dale C. Jacobson ,  Sami K. Hahto ,  Thomas N. Horsky

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0044 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/30477 ,  H01J2237/31703 ,  H01L21/26513

Abstract: A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept art ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight.

Abstract translation: 多用途离子植入物束线配置被构造用于使得能够注入常见的单原子掺杂剂离子种类和簇离子，束线配置具有质量分析器磁体，该质量分析器磁体限定磁体的铁磁极之间的相当宽度的极隙和质量选择孔， 分析器磁体的大小适于接受来自至少约80mm高度和至少约7mm宽度的槽形离子源提取孔的艺术离子束，并且在对应于宽度的平面的平面中在质量选择孔处产生分散体 质量选择孔能够被设置为质量选择宽度，其大小用于选择相同掺杂物种类的簇离子的束，但递增不同的分子量，质量选择孔也能够被设定为基本上更窄的质量 选择宽度和质量选择孔径处的分辨率足以能够选择光束的分析器磁体 单原子或分子量的单原子掺杂离子。

公开(公告)号：US08088632B2

公开(公告)日：2012-01-03

申请号：US12494977

申请日：2009-06-30

Applicant: Satoshi Shibata ,  Hisako Kamiyanagi ,  Fumitoshi Kawase ,  Tetsuyuki Okano

Inventor： Satoshi Shibata ,  Hisako Kamiyanagi ,  Fumitoshi Kawase ,  Tetsuyuki Okano

IPC: H01L21/00

CPC classification number: H01L22/20 ,  H01J2237/2566 ,  H01J2237/31703 ,  H01L22/12

Abstract: Protons are entered into a substrate to be analyzed at a proton incident angle larger than 0° and smaller 90°. Excited by the entered protons and emitted from the substrate to be analyzed, the characteristic X-ray is measured by an energy dispersive X-ray detector and the like. Impurity elements present in the substrate to be analyzed are identified based on the measured characteristic X-ray. The in-plane distribution in the substrate can be obtained by scanning the proton beam. The in-depth distribution can be obtained by entering protons at different proton incident angles. The elemental analysis method can be applied to semiconductor device manufacturing processes to analyze metal contamination or quantify a conductivity determining impurity element on an inline basis and with a high degree of accuracy.

Abstract translation: 质子以大于0°和较小90°的质子入射角进入基底进行分析。 由输入的质子激发并从要分析的基板发射，通过能量色散X射线检测器等测量特征X射线。 基于所测量的特征X射线识别存在于待分析基板中的杂质元素。 可以通过扫描质子束来获得衬底中的面内分布。 可以通过在不同的质子入射角进入质子来获得深度分布。 元素分析方法可以应用于半导体器件制造工艺，以分析金属污染或者在线性基础上以高准确度量化电导率确定杂质元素。

公开(公告)号：US20110297842A1

公开(公告)日：2011-12-08

申请号：US13154913

申请日：2011-06-07

Applicant: Shiro NINOMIYA ,  Toshio Yumiyama ,  Yasuhiko Kimura ,  Tetsuya Kudo ,  Akihiro Ochi

Inventor： Shiro NINOMIYA ,  Toshio Yumiyama ,  Yasuhiko Kimura ,  Tetsuya Kudo ,  Akihiro Ochi

IPC: H01J3/26

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/24405 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.

Abstract translation: 离子束照射方法包括根据束电流测量装置的测量结果计算具有最大光束扫描宽度的扫描电压校正函数，计算与根据预定的束扫描宽度相对应的每个扫描电压校正函数 计算出的扫描电压校正功能，同时满足水平方向上的剂量均匀性，测量离子注入期间的机械Y扫描位置，根据测量的机械Y扫描位置改变扫描电压校正功能，使得束扫描区域 成为与晶片的一半的外周对应的D字状的多级光束扫描区域，从而减小光束扫描宽度，并且根据侧杯电流测量的测量结果的变化来改变机械Y扫描速度 从而保持在垂直方向上的剂量均匀性。

公开(公告)号：US20110272567A1

公开(公告)日：2011-11-10

申请号：US12774037

申请日：2010-05-05

Applicant: Edward C. Eisner ,  Bo Vanderberg

Inventor： Edward C. Eisner ,  Bo Vanderberg

IPC: H01J37/317 ,  G12B13/00

CPC classification number: H01J37/3171 ,  H01J37/1472 ,  H01J37/3026 ,  H01J2237/30455 ,  H01J2237/30488 ,  H01J2237/31703

Abstract: Some aspects of the present disclosure increase throughput beyond what has previously been achievable by changing the scan rate of a scanned ion beam before the entire cross-sectional area of the ion beam extends beyond an edge of a workpiece. In this manner, the techniques disclosed herein help provide greater throughput than what has previously been achievable. In addition, some embodiments can utilize a rectangular (or other non-circularly shaped) scan pattern that allows real-time beam flux measurements to be taken off-wafer during actual implantation. In these embodiments, the workpiece implantation routine can be changed in real-time to account for real-time changes in beam flux. In this manner, the techniques disclosed herein help provide improved throughput and more accurate dosing profiles for workpieces than previously achievable.

Abstract translation: 本公开的一些方面通过在离子束的整个横截面积延伸超过工件的边缘之前改变扫描离子束的扫描速率而增加了超过先前可实现的吞吐量。 以这种方式，本文公开的技术有助于提供比先前可实现的更大的吞吐量。 此外，一些实施例可以利用允许实际光束通量测量在实际植入期间离开晶片的矩形（或其它非圆形）扫描图案。 在这些实施例中，可以实时地改变工件注入程序以考虑光束通量的实时变化。 以这种方式，本文公开的技术有助于为先前可实现的工件提供改善的生产量和更准确的工件配量曲线。

公开(公告)号：US07915597B2

公开(公告)日：2011-03-29

申请号：US12050594

申请日：2008-03-18

Applicant: Yongzhang Huang ,  Ilya Pokidov

Inventor： Yongzhang Huang ,  Ilya Pokidov

IPC: H01J3/14

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/20 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/20214 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.

Abstract translation: 一种系统和方法提取电极系统，包括提取电极，其中所述提取电极还限定孔并形成离子源的外壁的一部分，并且被配置为从离子源提取离子，抑制盘半组件 包括形成可变抑制孔径的两个抑制电极板半部，包括形成可变接地孔的两个接地电极板半部的接地盘半组件，其中抑制盘半组件配置在提取电极和接地盘半部之间 组件，其中所述抑制孔径和所述接地孔径在垂直于所述离子束行进方向的方向上可变，并且其中所述引出电极系统与摆锤往复驱动装置一起使用。