公开(公告)号：US09607813B2

公开(公告)日：2017-03-28

申请号：US14319638

申请日：2014-06-30

申请人： Sony Corporation

发明人： Jun Sasaki ,  Atsuhiro Abe ,  Ryoichi Hiratsuka

IPC分类号： H01J37/34 ,  C23C14/35 ,  H01F7/02

CPC分类号： H01J37/3452 ,  C23C14/35 ,  H01F7/0278 ,  H01J37/3405 ,  H01J37/345 ,  H01J37/3455

摘要： Provided is a magnetic field generation apparatus including: two or more main magnetic pole portions configured to generate a main magnetic field; one or more secondary magnetic pole portions including a plurality of first divisional magnets obtained by a division, that generate a secondary magnetic field for adjusting the generated main magnetic field; and a yoke portion including one or more first yokes opposing the plurality of first divisional magnets in correspondence with the one or more secondary magnetic pole portions.

公开(公告)号：US20170029935A1

公开(公告)日：2017-02-02

申请号：US15120703

申请日：2014-04-23

申请人： ZHONGAO HUICHENG TECHNOLOGY CO. LTD.

发明人： Lingling Li ,  Gong Jin ,  Jiangping Tu

IPC分类号： C23C14/35 ,  H01J37/34 ,  C23C14/20 ,  C23C14/06 ,  A61F2/30 ,  C23C14/50

CPC分类号： C23C14/352 ,  A61F2/30 ,  A61F2210/0076 ,  A61F2240/001 ,  A61F2310/00389 ,  A61F2310/00407 ,  A61L27/30 ,  C23C14/0605 ,  C23C14/0611 ,  C23C14/20 ,  C23C14/35 ,  C23C14/505 ,  H01J37/3429 ,  H01J37/345

摘要： The present invention aims at improving and upgrading the conventional devices based on the low temperature magnetron sputtering coating devices. Starting from the material systems, the invention provides a new material system and a manufacturing method thereof based on a high molecular weight polyethylene joint cup to solve the poor binding force problem between the film and the matrix, and the problems of easy oxidization and carbonization of high molecular weight polyethylene with low temperature magnetron sputtering technologies at the same time. On the above basis, the ultra-lubrication performance of graphite-like structure films and ultra-hardness of diamond-like structure films are utilized to construct a nano-scale multilayer structure DLC film alternatively coated with a graphite-like film and a diamond-like film. The present invention improves the wear resistance of high molecular weight polyethylene joint cups, and restricts low accuracy of joints due to creeping by constructing a new artificial hip joint cup of ultra-wear-resisting nano-scale multilayer structure DLC film with high hardness and self-lubricating capability.

摘要翻译： 本发明旨在改进和升级基于低温磁控溅射镀膜装置的传统装置。 从材料体系出发，本发明提供了一种基于高分子量聚乙烯接合杯的新材料体系及其制造方法，以解决薄膜与基质之间的不良结合力问题，以及易于氧化和碳化的问题 高分子量聚乙烯同时具有低温磁控溅射技术。 在上述基础上，利用石墨状结构膜的超润滑性能和金刚石结构膜的超硬度来构造纳米级多层结构DLC膜，其中涂覆有石墨状膜和金刚石结构膜， 喜欢电影 本发明提高了高分子量聚乙烯接头杯的耐磨性，并且通过构造出具有高硬度和自身的超耐磨纳米级多层结构DLC膜的新型人造髋关节杯，限制了由于蠕变引起的关节的低精度 润滑能力。

公开(公告)号：US20160326632A1

公开(公告)日：2016-11-10

申请号：US15147926

申请日：2016-05-06

申请人： safematic GmbH

发明人： Walter COLLEONI ,  Patrick CAPEDER ,  Christof GRAF

IPC分类号： C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  H01J37/34

CPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3411 ,  H01J37/3435 ,  H01J37/3444 ,  H01J37/345 ,  H01J37/347 ,  H01J37/3476 ,  H01J37/3488

摘要： A sputter unit is introduced comprising a housing, a gas inlet, an interface for removable connecting the sputter unit to a vacuum chamber, a gas outlet arranged for supplying a process gas received via the gas inlet to the vacuum chamber, an interface for removable connecting the sputter unit to a base unit comprising a vacuum pump for generating a vacuum in the vacuum chamber, and a transformer arranged in the housing for increasing a supply voltage into an ionisation voltage for ionising the process gas supplied via the gas outlet to the vacuum chamber.

摘要翻译： 引入溅射单元，包括壳体，气体入口，用于将溅射单元可移除地连接到真空室的接口，布置成用于将经由气体入口接收的处理气体供应到真空室的气体出口，用于可移除连接的界面 所述溅射单元到包括用于在所述真空室中产生真空的真空泵的基本单元，以及布置在所述壳体中的变压器，用于将电源电压增加到电离电压，用于将经由所述气体出口供给的处理气体电离到所述真空室 。

公开(公告)号：US20160189940A1

公开(公告)日：2016-06-30

申请号：US15061936

申请日：2016-03-04

申请人： SolarCity Corporation

发明人： Zhigang Xie ,  Wei Wang ,  Zheng Xu ,  Jianming Fu

IPC分类号： H01J37/34 ,  H01L31/0216 ,  H01J37/32 ,  C23C14/35 ,  H01L31/18

CPC分类号： H01J37/3414 ,  C23C14/3407 ,  C23C14/351 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3438 ,  H01J37/3444 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/347 ,  H01L31/02168 ,  H01L31/1876 ,  H01L31/1884 ,  Y02E10/50

摘要： One embodiment of the present invention provides a sputtering system for large-scale fabrication of solar cells. The sputtering system includes a reaction chamber, a rotary target situated inside the reaction chamber which is capable of rotating about a longitudinal axis, and an RF power source coupled to at least one end of the rotary target to enable RF sputtering. The length of the rotary target is between 0.5 and 5 meters.

摘要翻译： 本发明的一个实施例提供了一种用于大规模制造太阳能电池的溅射系统。 溅射系统包括反应室，位于反应室内部的能够围绕纵向轴线旋转的旋转靶，以及耦合到旋转靶的至少一端以实现RF溅射的RF电源。 旋转靶的长度在0.5到5米之间。

公开(公告)号：US09380692B2

公开(公告)日：2016-06-28

申请号：US13840057

申请日：2013-03-15

申请人： Samsung Electronics Co., Ltd. ,  SEMICAT, INC.

发明人： Jeonghee Park ,  Jae Yeol Park

IPC分类号： C23C14/24 ,  H05H1/16 ,  H01F7/02 ,  H01J37/34

CPC分类号： H05H1/16 ,  H01F7/0278 ,  H01J37/34 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3461

摘要： Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and arrangements of magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a magnetic field generator apparatus can include a rotatable magnetic field and a counterbalance magnetic field generator that rotates about the axis of rotation in opposition to the rotatable magnetic field generator. The rotatable magnetic field generator generates a first magnitude of a magnetic field adjacent to a first circumferential portion of a circular region. The counterbalance magnetic field generator generates a second magnitude of the magnetic field adjacent to a second circumferential portion. The rotatable and counterbalance magnetic field generators can be configured to generate the magnetic field between the first and a second plane along a diameter extending from the first circumferential portion to the second circumferential portion.

摘要翻译： 实施例一般涉及半导体器件制造和工艺，更具体地，涉及被配置为产生旋转磁场以促进物理气相沉积（“PVD”）的磁场发生器的装置和布置。 在一个实施例中，磁场发生器装置可以包括可旋转磁场和平衡磁场发生器，其围绕与旋转磁场发生器相对的旋转轴线旋转。 可旋转磁场发生器产生与圆形区域的第一圆周部分相邻的第一磁场强度。 平衡磁场发生器产生与第二圆周部分相邻的第二磁场强度。 可旋转和平衡磁场发生器可以被配置为沿着从第一周向部分延伸到第二周向部分的直径在第一和第二平面之间产生磁场。

公开(公告)号：US20160160343A1

公开(公告)日：2016-06-09

申请号：US14905123

申请日：2014-06-25

申请人： KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)

发明人： Satoshi HIROTA

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  C23C14/352 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/345

摘要： Provided is a film deposition device including a DMS target and a film-deposition power source, being capable of pre-sputtering the target by use of the film-deposition power source. The film deposition device includes: a film deposition chamber (10); first and second cathodes (20A, 20B) each having a target (24) and disposed next to each other in such an attitude that target surfaces (24a) faces a substrate in the film deposition chamber (10); a magnetic-field formation unit (30) forming a magnetic field in the vicinity of the surfaces (24a) of both targets (24); a film-deposition power source (40) connected to both of the cathodes (20A, 20B); and a shutter (50). The shutter (50) makes an opening-closing action between a close portion at which the shutter (50) is interposed between the substrate and the target surfaces (24a) of both cathodes to block the target surfaces (24a) collectively from the substrate and an open position to allow film deposition on the substrate through opening the space between the target surfaces (24a) and the substrate.

摘要翻译： 提供了一种包括DMS靶和膜沉积电源的成膜装置，其能够通过使用该膜沉积电源对靶进行预溅射。 该成膜装置包括：成膜室（10）; 第一和第二阴极（20A，20B），其各自具有靶（24）并且以使得目标表面（24a）面对成膜室（10）中的基板的姿态彼此相邻放置; 在两个靶（24）的表面（24a）附近形成磁场的磁场形成单元（30）; 连接到两个阴极（20A，20B）的成膜电源（40）; 和快门（50）。 挡板（50）在两个阴极的基板和目标表面（24a）之间插入挡板（50）的闭合部分之间进行开闭动作，以从基板共同阻挡目标表面（24a），并且 打开位置，以通过打开目标表面（24a）和基底之间的空间来允许膜沉积在基底上。

公开(公告)号：US20160118254A1

公开(公告)日：2016-04-28

申请号：US14740560

申请日：2015-06-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI

IPC分类号： H01L21/02 ,  C23C14/08 ,  C01G15/00 ,  C23C14/58 ,  C23C14/34 ,  C01G19/00 ,  H01L29/22 ,  C23C14/35

CPC分类号： H01L21/02631 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/566 ,  C23C14/5806 ,  H01J37/3408 ,  H01J37/345 ,  H01L21/02554 ,  H01L21/02565

摘要： An oxide that can be used for a semiconductor in a transistor or the like is formed. After a sputtering gas is supplied to a deposition chamber, a plasma including ions of the sputtering gas in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with a target, so that flat-plate particles and atoms included in the target are separated from the target. Surfaces of the plurality of flat-plate particles are negatively charged in plasma. One of the flat-plate particles negatively charged is deposited with a surface facing a substrate. Another flat-plate particle is deposited in a region apart from the one flat-plate particle over the substrate while repelling the one flat-plate particle. An atom and an aggregate of atoms are inserted in a gap between the one flat-plate particle and the another flat-plate particle and grow in the lateral direction in the gap between the flat-plate particles, so that the gap between the one flat-plate particle and the another flat-plate particle is filled.

摘要翻译： 可以形成可用于晶体管等中的半导体的氧化物。 在溅射气体向沉积室供应包括溅射气体在靶附近的离子的等离子体。 溅射气体的离子被加速并与目标物碰撞，使靶中包含的平板粒子和原子与靶分离。 多个平板颗粒的表面在等离子体中带负电。 带负电荷的平板颗粒之一沉积有面向衬底的表面。 另一个平板颗粒沉积在一个平板颗粒之外的区域上，同时排斥一个平板颗粒。 原子和原子团聚在一个平板颗粒和另一个平板颗粒之间的间隙中插入，并且在平板颗粒之间的间隙中在横向上生长，使得一个平板之间的间隙 平板颗粒，并填充另一平板颗粒。

公开(公告)号：US09218945B2

公开(公告)日：2015-12-22

申请号：US13323241

申请日：2011-12-12

申请人： Fred Chetcuti ,  Edward J. McInerney

发明人： Fred Chetcuti ,  Edward J. McInerney

IPC分类号： C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  C23C14/56

CPC分类号： H01J37/3405 ,  C23C14/35 ,  C23C14/568 ,  H01J37/345

摘要： A magnetron include a center plurality of magnets and an outer plurality of magnets arranged around the center plurality of magnets in a shape of two long sections and two shorter turnaround sections. The outer plurality of magnets are configured with at least one region of weaker magnetic field strength in at least one of the two long sections and adjacent to one of the two turnaround sections.

摘要翻译： 磁控管包括中心多个磁体和围绕中心多个磁体布置的外部多个磁体，其形状为两个长部分和两个较短的周转部分。 外部多个磁体在两个长部分中的至少一个中并且与两个周转部分中的一个相邻地配置有至少一个弱磁场强度的区域。

公开(公告)号：US20150107992A1

公开(公告)日：2015-04-23

申请号：US14579290

申请日：2014-12-22

申请人： CANON ANELVA CORPORATION

发明人： Hidekazu SUZUKI

IPC分类号： H01J37/34 ,  H01F7/02

CPC分类号： H01J37/345 ,  H01F7/021 ,  H01F7/0221 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3461 ,  H01J2237/332

摘要： A sputtering apparatus comprises: a target holder; and a magnet unit of a rectangular shape having long and short sides. the magnet unit includes: a first magnet; a second magnet disposed surrounding the first magnet and magnetized in a different and opposite direction from a direction of magnetization of the first magnet, and a third magnet located at part between the first magnet and the second magnet in the short-side direction and at least at a center position between the first magnet and the second magnet, the third magnet being magnetized in the short-side direction. In the third magnet, a surface facing the second magnet has the same polarity as that of a surface of the second magnet on the target holder side, and a surface facing the first magnet has the same polarity as that of a surface of the first magnet on the target holder side.

摘要翻译： 溅射装置包括：目标支架; 以及具有长边和短边的矩形的磁体单元。 磁体单元包括：第一磁体; 第二磁体，其围绕所述第一磁体设置并沿与所述第一磁体的磁化方向不同且相反的方向磁化;以及第三磁体，位于所述第一磁体和所述第二磁体之间的短边方向上的部分，并且至少 在第一磁体和第二磁体之间的中心位置处，第三磁体沿短边方向被磁化。 在第三磁体中，面对第二磁体的表面具有与靶保持器侧的第二磁体的表面相同的极性，并且面对第一磁体的表面具有与第一磁体的表面相同的极性 在目标持有人一方。

公开(公告)号：US08951394B2

公开(公告)日：2015-02-10

申请号：US12887065

申请日：2010-09-21

申请人： Mark A. Bernick ,  Richard Newcomb

发明人： Mark A. Bernick ,  Richard Newcomb

IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/35 ,  C23C14/54

CPC分类号： H01J37/3461 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/345 ,  H01J37/347 ,  H01J2237/3323 ,  Y10T29/49002

摘要： A magnetron sputtering electrode for use in a rotatable cylindrical magnetron sputtering device, the electrode including a cathode body defining a magnet receiving chamber and a cylindrical target surrounding the cathode body. The target is rotatable about the cathode body A magnet arrangement is received within the magnet receiving chamber, the magnet arrangement including a plurality of magnets. A shunt is secured to the cathode body and proximate to a side of the magnet arrangement, the shunt extending in a plane substantially parallel to the side of the magnet arrangement. A method of fine-tuning a magnetron sputtering electrode in a rotatable cylindrical magnetron sputtering device is also disclosed.

摘要翻译： 一种用于可旋转圆柱形磁控溅射装置的磁控溅射电极，所述电极包括限定磁体接收室的阴极体和围绕阴极体的圆柱形靶。 目标物能够围绕阴极体旋转。磁体装置被容纳在磁体容纳室内，磁体装置包括多个磁体。 分流器固定到阴极体并且靠近磁体装置的一侧，分流器在基本上平行于磁体装置侧面的平面中延伸。 还公开了一种在可旋转的圆柱形磁控溅射装置中微调磁控溅射电极的方法。