公开(公告)号：US4568397A

公开(公告)日：1986-02-04

申请号：US649650

申请日：1984-09-12

Applicant: William E. Hoke ,  Richard Traczewski ,  Peter J. Lemonias

Inventor： William E. Hoke ,  Richard Traczewski ,  Peter J. Lemonias

IPC: C30B25/02 ,  H01L21/365 ,  H01L31/00

CPC classification number: H01L21/02395 ,  C30B25/02 ,  C30B29/48 ,  H01L21/02398 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/0262 ,  Y10S148/063 ,  Y10S148/064 ,  Y10S148/08 ,  Y10S148/11

Abstract: A method for growing a Group II-VI epitaxial layer on a substrate, said epitaxial layer having an electron mobility greater than 1.5.times.10.sup.5 cm.sup.2 /V-sec at 77.degree. K. and a carrier concentration less than 4.times.10.sup.15 (cm.sup.-3) is described. The method includes the steps of directing a plurality of vapor flows towards the substrate including a Group II metalorganic vapor having a mole fraction in the range of 3.0.times.10.sup.-4 to 4.5.times.10.sup.-4, a Group VI metalorganic vapor having a mole fraction in the range of 2.9.times.10.sup.-3 to 3.5.times.10.sup.-3 and a Group II elemental metal vapor having a mole fraction in the range of 2.6.times.10.sup.-2 to 3.2.times.10.sup.-2. The source of Group II metal is heated to at least 240.degree. C. while radiant energy is directed toward the reactor vessel to warm the zone of the reactor vessel between the Group II metal source and the substrate to at least 240.degree. C. The directed flows of Group II metalorganic vapor, Group VI metalorganic vapor and Group II metal vapor then chemically react to form the epitaxial layer.

Abstract translation: 一种用于在衬底上生长II-VI族外延层的方法，所述外延层在77°K具有大于1.5×10 5 cm 2 / V·sec的电子迁移率，并且载流子浓度小于4×10 15（cm -3）） 。 该方法包括以下步骤：将多个蒸气流引向基材，包括摩尔分数在3.0×10 -4至4.5×10 -4范围内的第II族金属有机蒸汽，第VI族金属有机蒸气的摩尔分数在 范围为2.9×10 -3至3.5×10 -3，以及摩尔分数在2.6×10 -2至3.2×10 -2范围内的II族元素金属蒸气。 将II族金属的来源加热至至少240℃，同时将辐射能量指向反应器容器以将第II族金属源和基底之间的反应器容器区域加热至至少240℃。定向 第II族金属有机蒸气，第VI族金属有机蒸气和第II族金属蒸气的流动然后化学反应形成外延层。

公开(公告)号：US4376663A

公开(公告)日：1983-03-15

申请号：US328766

申请日：1981-12-08

Applicant: Cheng-Chi Wang ,  Muren Chu

Inventor： Cheng-Chi Wang ,  Muren Chu

IPC: H01L21/368 ,  H01L21/465 ,  H01L31/109 ,  H01L31/18 ,  H01L21/208

CPC classification number: H01L31/1832 ,  H01L21/02411 ,  H01L21/02433 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02658 ,  H01L21/465 ,  H01L31/109 ,  H01L31/1828 ,  Y02E10/543 ,  Y10S438/955

Abstract: Disclosed is a method of growing a layer of CdTe on HgCdTe by liquid phase epitaxy. The solution for growth comprises Sn and Hg with a small amount of CdTe. A typical composition is Sn:Hg:CdTe=36:5:0.15 parts by weight. The growth temperature is a function of the amount of CdTe in solution. For the typical composition stated, the growth temperature is about 520.degree. C. The layers were grown on (111)A oriented CdTe substrates. The HgCdTe epilayer with a desired Cd composition is first grown, and an epilayer of CdTe is subsequently grown on the HgCdTe epilayer. The cross-diffusion at the CdTe/Hg.sub.1-x Cd.sub.x Te interface has been as small as 0.3 .mu.m for the thin CdTe epilayer. The first CdTe/HgCdTe heterojunction sensitive to .about.2.8 .mu.m at 77K has been demonstrated.

Abstract translation: 公开了通过液相外延在HgCdTe上生长CdTe层的方法。 用于生长的溶液包括具有少量CdTe的Sn和Hg。 典型的组成是Sn：Hg：CdTe = 36:5:0.15重量份。 生长温度是溶液中CdTe量的函数。 对于所述的典型组成，生长温度为约520℃。将层在（111）A取向的CdTe底物上生长。 首先生长具有所需Cd组成的HgCdTe外延层，随后在HgCdTe外延层上生长CdTe的外延层。 CdTe / Hg1-xCdxTe界面的交叉扩散对于薄的CdTe外延层来说已经小到0.3μm。 已经证明了在77K下对于差异2.8μm敏感的第一CdTe / HgCdTe异质结。

公开(公告)号：US3462323A

公开(公告)日：1969-08-19

申请号：US3462323D

申请日：1966-12-05

Applicant: MONSANTO CO

Inventor： GROVES WARREN O

IPC: H01L21/363 ,  H01L21/365 ,  H01L7/36

CPC classification number: H01L21/0262 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02579 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S252/95 ,  Y10S252/951 ,  Y10S420/903

公开(公告)号：US09431569B2

公开(公告)日：2016-08-30

申请号：US14141408

申请日：2013-12-26

Applicant: First Solar, Inc.

Inventor： Sergey Barabash ,  Amir Bayati ,  Dipankar Pramanik ,  Zhi-Wen Sun

IPC: C01B19/00 ,  H01L35/16 ,  H01L31/18

CPC classification number: H01L31/1832 ,  C23C14/0629 ,  C23C16/305 ,  H01L21/02411 ,  H01L21/02422 ,  H01L21/0248 ,  H01L21/02485 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/1836 ,  Y02E10/541 ,  Y02P70/521

Abstract: Embodiments provided herein describe methods for forming cadmium-manganese-telluride (CMT), such as for use in photovoltaic devices. A substrate including a material with a zinc blend crystalline structure is provided. CMT is formed above the substrate. During the formation of the CMT, cation-rich processing conditions are maintained. The resulting CMT may be more readily provided with p-type dopants when compared to conventionally-formed CMT.

Abstract translation: 本文提供的实施方案描述了形成碲化锰 - 碲化物（CMT）的方法，例如用于光伏器件中的方法。 提供了包含具有锌掺杂晶体结构的材料的衬底。 CMT形成在衬底之上。 在CMT的形成过程中，维持富阳离子处理条件。 当与常规形成的CMT相比时，所得到的CMT可以更容易地被提供有p型掺杂剂。

公开(公告)号：US20140374266A1

公开(公告)日：2014-12-25

申请号：US14136570

申请日：2013-12-20

Applicant: First Solar, Inc.

Inventor： Markus Gloeckler ,  Long Cheng

IPC: C25D7/12 ,  C25D17/00 ,  H01L31/18 ,  C25D21/12

CPC classification number: C25D7/12 ,  C25D17/001 ,  C25D21/12 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L31/1832

Abstract: A method and apparatus for controlling and changing the composition of a cadmium zinc telluride (CZT) transition layer as it is formed over a partially completed photovoltaic device using electrochemical deposition (ECD) where plating variables are systematically changed while the CZT transition layer is formed to change the composition of the plated CZT transition layer.

Abstract translation: 一种用于控制和改变碲化锌碲化镉（CZT）过渡层的组成的方法和装置，其在使用电化学沉积（ECD）的部分完成的光伏器件上形成，其中电镀变量在形成CZT过渡层时被系统地改变， 改变电镀CZT过渡层的组成。

公开(公告)号：US08513775B2

公开(公告)日：2013-08-20

申请号：US13131614

申请日：2010-09-30

Applicant: Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurita ,  Ryuichi Hirano

Inventor： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurita ,  Ryuichi Hirano

IPC: H01L29/22 ,  H01L31/0328 ,  H01L31/0296 ,  H01L31/00 ,  H01L31/0336

CPC classification number: C30B29/48 ,  C30B25/186 ,  H01L21/02024 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/463

Abstract: Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth.A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 μm×10 μm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.

Abstract translation: 提供了一种用于外延生长的CdTe基半导体衬底，其能够在不促使衬底用户在外延生长之前实施蚀刻处理的同时生长良好质量的外延晶体。 当通过原子力显微镜观察基板的表面时，在10mum×10um的观察范围内未观察到具有1nm以上的深度的线性抛光损伤的轨迹的CdTe系半导体基板， 在荧光灯下目视观察基板的表面时，不会观察到橙皮缺陷，可以生长优质的外延晶体。

公开(公告)号：US08277942B2

公开(公告)日：2012-10-02

申请号：US12888161

申请日：2010-09-22

Applicant: Sungjee Kim ,  Moungi G. Bawendi

Inventor： Sungjee Kim ,  Moungi G. Bawendi

IPC: B32B5/16

CPC classification number: G01N33/588 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/883 ,  C30B7/00 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/426 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/811 ,  Y10T428/12021 ,  Y10T428/12528 ,  Y10T428/12986 ,  Y10T428/294 ,  Y10T428/2991 ,  Y10T428/315

Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.

Abstract translation: 半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。 在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。

公开(公告)号：US20110233729A1

公开(公告)日：2011-09-29

申请号：US13131614

申请日：2010-09-30

Applicant: Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurta ,  Ryuichi Hirano

Inventor： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurta ,  Ryuichi Hirano

IPC: H01L29/22 ,  B65D85/00

CPC classification number: C30B29/48 ,  C30B25/186 ,  H01L21/02024 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/463

Abstract: Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth.A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 μm×10 μm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.

Abstract translation: 提供了一种用于外延生长的CdTe基半导体衬底，其能够在不促使衬底用户在外延生长之前实施蚀刻处理的同时生长良好质量的外延晶体。 当通过原子力显微镜观察基板的表面时，在10μm×10μm的观察范围内未观察到具有1nm以上的深度的线性抛光损伤的轨迹的CdTe系半导体基板， 在荧光灯下目视观察基板的表面时，不会观察到橙皮缺陷，可以生长优质的外延晶体。

公开(公告)号：US07825405B2

公开(公告)日：2010-11-02

申请号：US12213001

申请日：2008-06-12

Applicant: Sungjee Kim ,  Moungi G. Bawendi

Inventor： Sungjee Kim ,  Moungi G. Bawendi

IPC: H01L27/02 ,  B32B5/16

CPC classification number: G01N33/588 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/883 ,  C30B7/00 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/426 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/811 ,  Y10T428/12021 ,  Y10T428/12528 ,  Y10T428/12986 ,  Y10T428/294 ,  Y10T428/2991 ,  Y10T428/315

Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.

Abstract translation: 半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。 在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。

公开(公告)号：US20090301564A1

公开(公告)日：2009-12-10

申请号：US12213001

申请日：2008-06-12

Applicant: Sungjee Kim ,  Moungi G. Bawendi

Inventor： Sungjee Kim ,  Moungi G. Bawendi

IPC: H01L31/0296 ,  H01L33/00 ,  H01L31/0304 ,  H01L31/0272 ,  H01L31/032 ,  H01L31/0248

CPC classification number: G01N33/588 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/883 ,  C30B7/00 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/426 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/811 ,  Y10T428/12021 ,  Y10T428/12528 ,  Y10T428/12986 ,  Y10T428/294 ,  Y10T428/2991 ,  Y10T428/315

Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.

Abstract translation: 半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。 在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。