公开(公告)号：US07755081B2

公开(公告)日：2010-07-13

申请号：US11558015

申请日：2006-11-09

申请人： Yiliang Wu ,  Beng S. Ong ,  Ping Liu

发明人： Yiliang Wu ,  Beng S. Ong ,  Ping Liu

IPC分类号： H01L35/24

CPC分类号： H01L23/5329 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques.

摘要翻译： 本文提供由甲硅烷氧基/金属氧化物杂化组合物制备的电介质材料，以及包括这种介电材料的电子器件如薄膜晶体管。 甲硅烷氧基/金属氧化物杂化组合物包含甲硅烷氧基组分，例如硅氧烷或倍半硅氧烷。 甲硅烷氧基/金属氧化物杂化组合物可用于使用溶液沉积技术制备用于薄膜晶体管的电介质层。

公开(公告)号：US20100140705A1

公开(公告)日：2010-06-10

申请号：US12328849

申请日：2008-12-05

申请人： Yiliang Wu ,  Paul F. Smith

发明人： Yiliang Wu ,  Paul F. Smith

IPC分类号： H01L29/06 ,  H01L29/786 ,  B32B27/32 ,  B32B27/30 ,  B32B9/04

CPC分类号： H01L51/0537 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  Y10T428/31504 ,  Y10T428/31663 ,  Y10T428/31855 ,  Y10T428/31931

摘要： An electronic device including in any sequence: (a) a semiconductor layer; and (b) a dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a lower concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.

摘要翻译： 一种电子设备，包括以下任何顺序：（a）半导体层; 和（b）包含较低k电介质聚合物和较高k电介质聚合物的电介质结构，其中较低k电介质聚合物的浓度低于介电结构最接近 半导体层。

公开(公告)号：US20100051917A1

公开(公告)日：2010-03-04

申请号：US12514358

申请日：2007-11-13

申请人： Bernard Kippelen ,  Joseph Perry ,  Seth Marder ,  Philseok Kim ,  Simon Jones ,  Joshua N. Haddock ,  Xiaohong Zhang ,  Benoit Domercq ,  Peter Hotchkiss

发明人： Bernard Kippelen ,  Joseph Perry ,  Seth Marder ,  Philseok Kim ,  Simon Jones ,  Joshua N. Haddock ,  Xiaohong Zhang ,  Benoit Domercq ,  Peter Hotchkiss

IPC分类号： H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0537

摘要： Disclosed are embodiments of organic thin-film transistors (OTFT) with a gate insulator layer comprised of nanocomposites incorporating metal oxide nanoparticles coated by organic ligands and methods of fabricating such OTFTs. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

摘要翻译： 公开了具有栅极绝缘体层的有机薄膜晶体管（OTFT）的实施方案，该栅极绝缘体层由纳米复合材料构成，该纳米复合材料掺入由有机配体包被的金属氧化物纳米颗粒和制造这种OTFT的方法。 该摘要旨在作为用于在特定技术中进行搜索的扫描工具，而不意在限制本发明。

公开(公告)号：US20090224234A1

公开(公告)日：2009-09-10

申请号：US12361000

申请日：2009-01-28

申请人： Jai Kyeong Kim ,  Dong Young Kim ,  June Whan Choi ,  Ho Gyu Yoon

发明人： Jai Kyeong Kim ,  Dong Young Kim ,  June Whan Choi ,  Ho Gyu Yoon

IPC分类号： H01L51/30 ,  H01L51/40 ,  H01L51/10

CPC分类号： H01L51/0537 ,  C01G1/02 ,  C01G23/053

摘要： The present invention relates to an organic thin film transistor comprising a photocurable transparent inorganic/polymer composite layer as a gate insulator layer in which metal oxide nanoparticles are generated within a photocurable transparent polymer through sol-gel and photocuring reactions and whose permittivity is easily regulated; and a fabrication method thereof. Since the organic thin film transistor according to the present invention utilizes the photocurable transparent inorganic/polymer composite layer showing a significantly high and readily controllable permittivity as a gate insulator, it is capable of operating under low voltage conditions and has a high on/off current ratio due to low leakage current. Further, the organic thin film transistor according to the present invention preserves the unique properties of the photocurable transparent polymer, enabling the formation of a photocurable micropattern of a gate insulator having high processibility

摘要翻译： 本发明涉及一种有机薄膜晶体管，其包含可光固化的透明无机/聚合物复合层作为栅极绝缘体层，其中通过溶胶 - 凝胶和光固化反应在可光固化的透明聚合物内产生金属氧化物纳米颗粒，并且其介电常数易于调节; 及其制造方法。 由于根据本发明的有机薄膜晶体管使用显示出非常高且易于控制的介电常数的可光固化的透明无机/聚合物复合层作为栅极绝缘体，因此能够在低电压条件下工作并且具有高的导通/截止电流 比例由于漏电流低。 此外，根据本发明的有机薄膜晶体管保持了光固化性透明聚合物的独特性质，能够形成具有高加工性的栅极绝缘体的光固化微图案

公开(公告)号：US20090179194A1

公开(公告)日：2009-07-16

申请号：US12014884

申请日：2008-01-16

申请人： Yiliang Wu ,  Beng S. Ong

发明人： Yiliang Wu ,  Beng S. Ong

IPC分类号： H01L51/05 ,  H01L21/31

CPC分类号： H01L51/0529 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/3122 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer.

摘要翻译： 有机薄膜晶体管具有由嵌段共聚物形成的栅极电介质层。 嵌段共聚物包括极性嵌段和非极性嵌段。 所得的电介质层对栅电极具有良好的粘合性，并且与半导体层具有良好的相容性。

公开(公告)号：US20090026443A1

公开(公告)日：2009-01-29

申请号：US11908645

申请日：2006-03-13

申请人： Satoru Ohta

发明人： Satoru Ohta

IPC分类号： H01L51/05 ,  H01L51/40

CPC分类号： H01L51/0537 ,  H01L21/31637 ,  H01L21/31691

摘要： A durable organic thin-film transistor and a method of manufacture thereof, the organic thin-film transistor having: a source electrode and a drain electrode arranged mutually separated; an organic semiconductor layer interposed between the source electrode and the drain electrode; and a gate electrode arranged to face said organic semiconductor layer which is between said source electrode and said drain electrode, with a gate insulating film being provided between said gate electrode and said organic semiconductor layer, wherein the gate insulating film includes an organic compound and particles of an inorganic compound dispersed in the organic compound, and a flattened film is provided between the source electrode and the drain electrode, or the gate electrode and the gate insulating film.

摘要翻译： 一种耐用的有机薄膜晶体管及其制造方法，所述有机薄膜晶体管具有：相互分离布置的源极和漏极; 介于源电极和漏电极之间的有机半导体层; 以及栅极电极，其布置成面对所述源电极和所述漏电极之间的所述有机半导体层，栅极绝缘膜设置在所述栅电极和所述有机半导体层之间，其中所述栅绝缘膜包括有机化合物和颗粒 的分散在有机化合物中的无机化合物，并且在源电极和漏电极之间或者栅极电极和栅极绝缘膜之间设置有平坦的膜。

公开(公告)号：US20090004771A1

公开(公告)日：2009-01-01

申请号：US11771787

申请日：2007-06-29

申请人： James C. Novack ,  Dennis E. Vogel ,  Brian K. Nelson

发明人： James C. Novack ,  Dennis E. Vogel ,  Brian K. Nelson

IPC分类号： H01L21/336 ,  B05D3/06 ,  H01L51/40 ,  B05D5/12

CPC分类号： H01L51/0537 ,  H01L27/1292 ,  H01L29/78681 ,  H01L51/0005 ,  H01L51/0541 ,  H01L51/0545

摘要： A method of making an electronic device comprises solution depositing a dielectric composition onto a substrate and polymerizing the dielectric composition to form a gate dielectric. The dielectric composition comprises a polymerizable resin and zirconium oxide nanoparticles.

摘要翻译： 制造电子器件的方法包括将电介质组合物沉积在衬底上并聚合电介质组合物以形成栅极电介质。 电介质组合物包含可聚合树脂和氧化锆纳米颗粒。

公开(公告)号：US07382041B2

公开(公告)日：2008-06-03

申请号：US11172980

申请日：2005-07-05

申请人： Shinsuke Okada ,  Masaki Hirakata ,  Miho Watanabe ,  Taishi Shigematsu ,  Shigeki Ooma ,  Chikara Manabe

发明人： Shinsuke Okada ,  Masaki Hirakata ,  Miho Watanabe ,  Taishi Shigematsu ,  Shigeki Ooma ,  Chikara Manabe

IPC分类号： H01L23/58

CPC分类号： H01L21/02282 ,  H01L21/02118 ,  H01L21/28158 ,  H01L21/312 ,  H01L21/31604 ,  H01L29/51 ,  H01L51/0537

摘要： A method of producing an organic-inorganic composite insulating material for electronic element comprises subjecting a mixture of an organic polymer or its solution and a metal alkoxide or its solution as a starting material to sol-gel reaction of the metal alkoxide in the presence of the organic polymer.

摘要翻译： 一种电子元件用有机无机复合绝缘材料的制造方法，其特征在于，使有机聚合物或其溶液与金属醇盐或其溶液的混合物作为起始原料，在金属醇盐存在下进行溶胶 - 凝胶反应 有机聚合物。

公开(公告)号：US07338835B2

公开(公告)日：2008-03-04

申请号：US11177602

申请日：2005-07-08

申请人： Zhenan Bao

发明人： Zhenan Bao

IPC分类号： H01L51/40

CPC分类号： H01L51/0541 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0558

摘要： The present invention provides apparatus and a method of fabricating the apparatus. The apparatus includes a substrate having a surface and an organic field-effect transistor (OFET) located adjacent the surface of the substrate. The OFET comprising a gate, a channel, a source electrode, and a drain electrode. The channel comprises a densified layer of organic molecules with conjugated multiple bonds, axes of the organic molecules being oriented substantially normal to the surface.

摘要翻译： 本发明提供了一种装置及其制造方法。 该装置包括具有表面的衬底和位于衬底表面附近的有机场效应晶体管（OFET）。 OFET包括栅极，沟道，源电极和漏电极。 该通道包括具有共轭多重键的有机分子的致密化层，有机分子的轴线基本上垂直于表面。

公开(公告)号：US06913944B2

公开(公告)日：2005-07-05

申请号：US10742194

申请日：2003-12-19

申请人： Katsura Hirai

发明人： Katsura Hirai

IPC分类号： G02F1/1368 ,  H01L27/28 ,  H01L35/24 ,  H01L51/05 ,  H01L51/10 ,  H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0541 ,  G02F1/1368 ,  G02F2202/02 ,  H01L27/28 ,  H01L27/283 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0055 ,  H01L51/0512 ,  H01L51/0516 ,  H01L51/0525 ,  H01L51/0529 ,  H01L51/0533 ,  H01L51/0537 ,  H01L51/0545 ,  H01L51/10 ,  H01L51/102 ,  H01L51/107

摘要： An organic thin-film transistor manufacturing method and an organic thin-film transistor manufactured by the method are disclosed, the method comprising the steps of a) forming a gate electrode on a substrate, b) forming a gate insulating layer on the substrate, c) forming an organic semiconductor layer on the substrate, d) forming an organic semiconductor layer protective layer on the organic semiconductor layer, e) removing a part of the organic semiconductor layer protective layer, and f) forming a source electrode and a drain electrode at portions where the organic semiconductor layer protective layer has been removed, so that the source electrode and drain electrode contacts the organic semiconductor layer.

摘要翻译： 公开了一种通过该方法制造的有机薄膜晶体管制造方法和有机薄膜晶体管，该方法包括以下步骤：a）在衬底上形成栅电极，b）在衬底上形成栅极绝缘层，c ）在所述衬底上形成有机半导体层，d）在所述有机半导体层上形成有机半导体层保护层，e）去除所述有机半导体层保护层的一部分，以及f）形成源电极和漏电极 去除了有机半导体层保护层的部分，使得源电极和漏电极接触有机半导体层。