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    WAVEGUIDE-COUPLED VERTICAL CAVITY LASER
    13.
    发明申请
    WAVEGUIDE-COUPLED VERTICAL CAVITY LASER 有权
    波形耦合垂直孔激光

    公开(公告)号：US20140226684A1

    公开(公告)日：2014-08-14

    申请号：US13764223

    申请日：2013-02-11

    申请人： ORACLE INTERNATIONAL CORPORATION

    发明人： Ashok V. Krishnamoorthy ,  John E. Cunningham ,  Xuezhe Zheng

    IPC分类号： H01S5/20 ,  H01S5/06

    CPC分类号： H01S5/026 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0218 ,  H01S5/0612 ,  H01S5/06804 ,  H01S5/1032 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/2045 ,  H01S5/3013

    摘要： An integrated circuit includes an optical source that provides an optical signal to an optical waveguide. In particular, the optical source may be implemented by fusion-bonding a III-V semiconductor to a semiconductor layer in the integrated circuit. In conjunction with surrounding mirrors (at least one of which is other than a distributed Bragg reflector), this structure may provide a cavity with suitable optical gain at a wavelength in the optical signal along a vertical direction that is perpendicular to a plane of the semiconductor layer. For example, the optical source may include a vertical-cavity surface-emitting laser (VCSEL). Moreover, the optical waveguide, defined in the semiconductor layer, may be separated from the optical source by a horizontal gap in the plane of the semiconductor layer. During operation of the optical source, the optical signal may be optically coupled across the gap from the optical source to the optical waveguide.

    摘要翻译： 集成电路包括向光波导提供光信号的光源。 特别地，光源可以通过将III-V半导体熔合到集成电路中的半导体层来实现。 与周围的镜子（其中至少一个不同于分布式布拉格反射器）结合，该结构可以沿着垂直于半导体平面的垂直方向在光信号中的波长处提供适当的光学增益的空腔 层。 例如，光源可以包括垂直腔表面发射激光器（VCSEL）。 此外，限定在半导体层中的光波导可以通过半导体层的平面中的水平间隙与光源分离。 在光源的操作期间，光信号可以在从光源到光波导的间隙上光学耦合。

    Scalable semiconductor waveguide amplifier
    14.
    发明授权
    Scalable semiconductor waveguide amplifier 有权

    公开(公告)号：US08441723B2

    公开(公告)日：2013-05-14

    申请号：US13207598

    申请日：2011-08-11

    申请人： Robert Rex Rice ,  Hagop Injeyan

    发明人： Robert Rex Rice ,  Hagop Injeyan

    IPC分类号： H01S5/00 ,  G02B6/02

    CPC分类号： H01S5/50 ,  H01S5/024 ,  H01S5/02423 ,  H01S5/041 ,  H01S5/2045

    摘要： One embodiment of the present method and apparatus encompasses an apparatus that may have: a predetermined length, the self-imaging semiconductor waveguide having first and second opposed sides; quantum wells disposed within the self-imaging semiconductor waveguide along the length of the self-imaging semiconductor waveguide, the quantum wells being formed of a quantum well gain material; microchannel cooler that extends substantially the width of the self-imaging semiconductor waveguide, the microchannel cooler located adjacent the first side of the self-imaging semiconductor waveguide; and a plurality of pump arrays arranged along the microchannel cooler opposed from the first side of the self-imaging semiconductor waveguide; wherein the quantum well gain material is photopumped through the microchannel cooler.

    Electrically pumped low-threshold ultra-small photonic crystal lasers
    15.
    发明授权
    Electrically pumped low-threshold ultra-small photonic crystal lasers 有权
    电泵浦低阈值超小型光子晶体激光器

    公开(公告)号：US07813401B2

    公开(公告)日：2010-10-12

    申请号：US11777904

    申请日：2007-07-13

    申请人： Axel Scherer

    发明人： Axel Scherer

    IPC分类号： H01S5/00 ,  H01L31/00

    CPC分类号： H01S5/10 ,  B82Y20/00 ,  H01S5/0207 ,  H01S5/0218 ,  H01S5/041 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/18 ,  H01S5/183 ,  H01S5/2045 ,  H01S5/34326 ,  H01S5/4087 ,  H01S5/423

    摘要： The invention is a photonic crystal laser including a photonic crystal slab laser cavity including InGaP/InGaAlP crystalline layers, the InGaP/InGaAlP crystalline layers having a relaxed strain at one or more etched surfaces and a higher strain at a plurality of quantum wells and at a distance from the one or more etched surfaces. The photonic crystal laser also includes electrical pads configured to receive an electrical signal the electrical pads attached to the photonic crystal slab laser cavity via an insulating layer, the photonic crystal laser configured to emit a laser light in response to the electrical signal. In another aspect, the invention features a photonic crystal detector including a photonic crystal slab cavity including InGaP/InGaAlP crystalline layers. In yet another aspect, the invention features a process to fabricate a photonic crystal laser cavity.

    摘要翻译： 本发明是一种包括InGaP / InGaAlP结晶层的光子晶体激光腔的光子晶体激光器，InGaP / InGaAlP结晶层在一个或多个蚀刻表面具有松弛应变，在多个量子阱处具有较高的应变， 距离一个或多个蚀刻表面的距离。 光子晶体激光器还包括被配置为经由绝缘层接收附接到光子晶体板激光器腔的电焊盘的电信号的电焊盘，所述光子晶体激光器被配置为响应于电信号而发射激光。 另一方面，本发明的特征在于包括包含InGaP / InGaAlP晶体层的光子晶体平板腔的光子晶体检测器。 在另一方面，本发明的特征在于制造光子晶体激光腔的方法。

    WAVEGUIDE-COUPLED VERTICAL CAVITY LASER
    20.
    发明申请
    WAVEGUIDE-COUPLED VERTICAL CAVITY LASER 审中-公开
    波形耦合垂直孔激光

    公开(公告)号：US20150222086A1

    公开(公告)日：2015-08-06

    申请号：US14689847

    申请日：2015-04-17

    申请人： ORACLE INTERNATIONAL CORPORATION

    发明人： Ashok V. Krishnamoorthy ,  John E. Cunningham ,  Xuezhe Zheng

    IPC分类号： H01S5/026 ,  H01S5/068 ,  H01S5/183 ,  H01S5/02 ,  H01S5/30

    CPC分类号： H01S5/026 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0218 ,  H01S5/0612 ,  H01S5/06804 ,  H01S5/1032 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/2045 ,  H01S5/3013

    摘要： An integrated circuit includes an optical source that provides an optical signal to an optical waveguide. In particular, the optical source may be implemented by fusion-bonding a III-V semiconductor to a semiconductor layer in the integrated circuit. In conjunction with surrounding mirrors (at least one of which is other than a distributed Bragg reflector), this structure may provide a cavity with suitable optical gain at a wavelength in the optical signal along a vertical direction that is perpendicular to a plane of the semiconductor layer. For example, the optical source may include a vertical-cavity surface-emitting laser (VCSEL). Moreover, the optical waveguide, defined in the semiconductor layer, may be separated from the optical source by a horizontal gap in the plane of the semiconductor layer. During operation of the optical source, the optical signal may be optically coupled across the gap from the optical source to the optical waveguide.

    摘要翻译： 集成电路包括向光波导提供光信号的光源。 特别地，光源可以通过将III-V半导体熔合到集成电路中的半导体层来实现。 与周围的镜子（其中至少一个不同于分布式布拉格反射器）结合，该结构可以沿着垂直于半导体平面的垂直方向在光信号中的波长处提供适当的光学增益的空腔 层。 例如，光源可以包括垂直腔表面发射激光器（VCSEL）。 此外，限定在半导体层中的光波导可以通过半导体层的平面中的水平间隙与光源分离。 在光源的操作期间，光信号可以在从光源到光波导的间隙上光学耦合。