公开(公告)号：US11837623B2

公开(公告)日：2023-12-05

申请号：US17068223

申请日：2020-10-12

申请人： Raytheon Company

发明人： Eric Miller ,  Christian M. Boemler ,  Justin Gordon Adams Wehner ,  Drew Fairbanks ,  Sean P. Kilcoyne

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L23/498 ,  H01L21/311 ,  H01L23/488 ,  H01L23/48 ,  H01L23/485 ,  H04N25/75

CPC分类号： H01L27/1469 ,  H01L21/311 ,  H01L23/481 ,  H01L23/485 ,  H01L23/488 ,  H01L23/49827 ,  H01L27/148 ,  H01L27/1462 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14685 ,  H04N25/75

摘要： Methods and apparatus for an assembly having directly bonded first and second wafers where the assembly includes a backside surface and a front side surface. The first wafer includes IO signal connections vertically routed to the direct bonding interface by a first one of the bonding posts on the first wafer bonded to a first one of the bonding posts on the second wafer. The second wafer includes vertical routing of the IO signal connections from first one though the bonding posts on the second wafer to IO pads on a backside surface of the assembly.

公开(公告)号：US20230343887A1

公开(公告)日：2023-10-26

申请号：US18216496

申请日：2023-06-29

申请人： THE TRUSTEES OF DARTMOUTH COLLEGE

发明人： Zhiyuan WANG ,  Xiaoxin WANG ,  Jifeng LIU

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/119 ,  H01L31/0232 ,  H01L27/144

CPC分类号： H01L31/119 ,  H01L27/1446 ,  H01L27/146 ,  H01L27/14875 ,  H01L31/02327

摘要： Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

公开(公告)号：US11784206B2

公开(公告)日：2023-10-10

申请号：US17080780

申请日：2020-10-26

申请人： OmniVision Technologies, Inc.

发明人： Hui Zang ,  Gang Chen

IPC分类号： H01L27/146 ,  H01L27/148

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/14812

摘要： A pixel-array substrate includes a floating diffusion region and a first photodiode formed in a semiconductor substrate. A top surface of the semiconductor substrate defines a trench 1A and a trench 1B each (i) extending into the semiconductor substrate away from a planar region of the top surface between the trench 1A and the trench 1B and (ii) having a respective distal end, with respect to the floating diffusion region, located between the floating diffusion region and the first photodiode. In a horizontal plane parallel to the top surface and along an inter-trench direction between the trench 1A and the trench 1B, a first spatial separation between the trench 1A and the trench 1B increases with increasing distance from the floating diffusion region.

公开(公告)号：US20230290795A1

公开(公告)日：2023-09-14

申请号：US18118541

申请日：2023-03-07

申请人： DB HITEK CO., LTD.

发明人： Man Lyun HA ,  Jong Min KIM ,  Dong Jun OH

IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N25/713

CPC分类号： H01L27/14614 ,  H01L27/14818 ,  H04N25/713

摘要： An image sensor includes a charge accumulation region having a first conductivity type and disposed in a substrate, a charge storage region having the first conductivity type and disposed in the substrate to be laterally spaced apart from the charge accumulation region, a transfer gate electrode disposed on a channel region between the charge accumulation region and the charge storage region to transfer a charge from the charge accumulation region to the charge storage region, a first well region having a second conductivity type and disposed below the charge storage region to inhibit a charge generated below the charge storage region from being moved to the charge storage region, and a second well region having the second conductivity type and disposed below a portion of one side of the first well region adjacent to a neighboring image cell.

公开(公告)号：US20230261030A1

公开(公告)日：2023-08-17

申请号：US18139778

申请日：2023-04-26

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Yoshimichi KUMAGAI ,  Takashi ABE ,  Ryoto YOSHITA

IPC分类号： H01L27/148 ,  H04N25/76

CPC分类号： H01L27/14818 ,  H04N25/76

摘要： The present disclosure relates to an imaging device and an electronic device that make it possible to obtain a better pixel signal. A photoelectric conversion part that converts received light into a charge; a holding part that holds a charge transferred from the photoelectric conversion part; and a light shielding part that shields light between the photoelectric conversion part and the holding part are provided. The photoelectric conversion part, the holding part, and the light shielding part are formed in a semiconductor substrate. The light shielding part of a transfer region that transfers the charge from the photoelectric conversion part to the holding part is formed as a non-penetrating light shielding part that does not penetrate the semiconductor substrate. The light shielding part other than the transfer region is formed as a penetrating light shielding part that penetrates the semiconductor substrate. The present technology is applicable to an imaging device.

公开(公告)号：US11721713B2

公开(公告)日：2023-08-08

申请号：US17543967

申请日：2021-12-07

申请人： Samsung Electronics Co., Ltd.

发明人： Seungjoon Lee ,  Kyungho Lee ,  Jungbin Yun ,  Junghyung Pyo

IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N23/67 ,  H04N25/75

CPC分类号： H01L27/14627 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14831 ,  H04N23/67 ,  H04N25/75

摘要： An image sensor includes a pixel array including a plurality of pixel groups, each of the plurality of pixel groups including a plurality of unit pixels and sharing a single microlens, the plurality of unit pixels in each of the plurality of pixel groups including color filters of the same color, and a control logic configured to group the plurality of unit pixels of each of the plurality of pixel groups into a plurality of subgroups and to drive the pixel array for each subgroup. The plurality of subgroups include a first subgroup and a second subgroup. The control logic may be configured to obtain first image data corresponding to the first subgroup and second image data corresponding to the second subgroup, and the first subgroup and the second subgroup are provided with at least one unit pixel therebetween in the first direction or the second direction.

公开(公告)号：US11719635B2

公开(公告)日：2023-08-08

申请号：US17391473

申请日：2021-08-02

申请人： Quantum-Si Incorporated

发明人： Jonathan M. Rothberg ,  Keith G. Fife ,  David M. Boisvert

IPC分类号： G01N21/64 ,  H01L27/146 ,  C12Q1/6869 ,  H01L27/148 ,  G01S7/4865 ,  H04N25/77

CPC分类号： G01N21/6428 ,  C12Q1/6869 ,  G01N21/64 ,  G01N21/6408 ,  G01S7/4865 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14812 ,  H04N25/77 ,  G01N21/6458

摘要： An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

公开(公告)号：US20230223352A1

公开(公告)日：2023-07-13

申请号：US18121569

申请日：2023-03-14

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Hsu-Nan FANG ,  Chun-Jun ZHUANG

IPC分类号： H01L23/544 ,  H01L21/56 ,  H01L23/31 ,  H01L23/18 ,  H01L27/148 ,  H01L23/00

CPC分类号： H01L23/544 ,  H01L21/56 ,  H01L23/18 ,  H01L23/3114 ,  H01L24/05 ,  H01L27/148 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05022 ,  H01L2924/181

摘要： A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a first passivation layer, a first metal layer and a first semiconductor die. The first metal layer is embedded in the first passivation layer. The first metal layer defines a first through-hole. The first semiconductor die is disposed on the first passivation layer.

公开(公告)号：US11682685B2

公开(公告)日：2023-06-20

申请号：US17077081

申请日：2020-10-22

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sookyoung Roh ,  Seokho Yun

IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N25/13

CPC分类号： H01L27/14621 ,  H01L27/14625 ,  H01L27/14645 ,  H01L27/14868 ,  H04N25/134

摘要： Provided are a color separation element and an image sensor including the same. The color separation element includes a spacer layer; and a color separation lens array, which includes at least one nano-post arranged in the spacer layer and is configured to form a phase distribution for splitting and focusing incident light according to wavelengths, wherein periodic regions in which color separation lens arrays are repeatedly arranged are provided, and the color separation lens array is configured to interrupt phase distribution at the boundary of the periodic regions.

公开(公告)号：US20230125424A1

公开(公告)日：2023-04-27

申请号：US18086074

申请日：2022-12-21

申请人： CISTA SYSTEM CORP.

发明人： Zhaojian LI ,  Jiangtao PANG

IPC分类号： H01L27/146 ,  H01L27/148

摘要： Provided are an image sensor with one or more image receivers for image switching, and an imaging system and method therefor. The image sensor includes an image sensor array to generate first image data for a first image; a receiver to receive, into the image sensor, second image data for a second image; an image selection circuit coupled to the image sensor array and the receiver to receive the first image data and the second image data and select one of the first image data and the second image data according to one or more image selection criteria and at least one of the first image data and the second image data; and a transmitter coupled to the image selection circuit to transmit the selected one of the first image data and the second image data from the image sensor.