公开(公告)号：US20240322775A1

公开(公告)日：2024-09-26

申请号：US18187001

申请日：2023-03-21

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Peter Baumgartner ,  Steven Callender ,  Richard Geiger ,  Harald Gossner ,  Jonathan Jensen

IPC: H03F3/60 ,  H01L23/66 ,  H03F3/195 ,  H03F3/24

CPC classification number: H03F3/602 ,  H01L23/66 ,  H03F3/195 ,  H03F3/245 ,  H01L2223/6677 ,  H03F2200/294 ,  H03F2200/451

Abstract: Disclosed herein are electronic assemblies, integrated circuit (IC) packages, and communication devices implementing three-dimensional power combiners. An electronic assembly may include a first die, comprising a first transmission line, and a second die, comprising a second transmission line. Each die includes a first face and an opposing second face, and the second die is stacked above the first die so that the first face of the second die is coupled to the second face of the first die. The electronic assembly further includes a first conductive pathway between one end of the first transmission line and a first connection point at the first face of the first die, a second conductive pathway between one end of the second transmission line and a second connection point at the first face of the first die, and a third conductive pathway between the other ends of the first and second transmission lines.

公开(公告)号：US12040776B2

公开(公告)日：2024-07-16

申请号：US16526633

申请日：2019-07-30

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Aleksandar Aleksov ,  Feras Eid ,  Georgios Dogiamis ,  Johanna M. Swan

IPC: H03H9/05 ,  H01L23/00 ,  H01L23/538 ,  H01L25/00 ,  H01L25/18 ,  H03H9/58 ,  H10N30/87 ,  H10N30/88 ,  H10N39/00 ,  H01L23/498

CPC classification number: H03H9/0552 ,  H01L23/5385 ,  H01L24/16 ,  H01L25/18 ,  H01L25/50 ,  H03H9/58 ,  H10N30/875 ,  H10N30/883 ,  H10N39/00 ,  H01L23/49816 ,  H01L2224/16225 ,  H01L2924/19042

Abstract: Embodiments may relate to a radio frequency (RF) front-end module (FEM) that includes an acoustic wave resonator (AWR) die. The RF FEM may further include an active die coupled with the package substrate of the RF FEM. When the active die is coupled with the package substrate, the AWR die may be between the active die and the package substrate. Other embodiments may be described or claimed.

公开(公告)号：US12002745B2

公开(公告)日：2024-06-04

申请号：US17544693

申请日：2021-12-07

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Mathew J. Manusharow ,  Krishna Bharath ,  William J. Lambert ,  Robert L. Sankman ,  Aleksandar Aleksov ,  Brandon M. Rawlings ,  Feras Eid ,  Javier Soto Gonzalez ,  Meizi Jiao ,  Suddhasattwa Nad ,  Telesphor Kamgaing

IPC: H05K1/02 ,  H01F17/00 ,  H01F17/06 ,  H01F27/28 ,  H01F27/40 ,  H01F41/04 ,  H01G4/18 ,  H01G4/252 ,  H01G4/30 ,  H01G4/33 ,  H01L21/48 ,  H01L23/498 ,  H01L23/552 ,  H01L23/66 ,  H01L49/02

CPC classification number: H01L23/49838 ,  H01F17/0006 ,  H01F27/2804 ,  H01F27/40 ,  H01F41/041 ,  H01G4/33 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/66 ,  H01L28/00 ,  H01L28/10 ,  H01L28/60 ,  H01F2027/2809 ,  H01L2223/6661

Abstract: Embodiments of the invention include an electrical package and methods of forming the package. In one embodiment, a transformer may be formed in the electrical package. The transformer may include a first conductive loop that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first conductive loop from a second conductive loop that is formed in the package. Additional embodiments of the invention include forming a capacitor formed in the electrical package. For example, the capacitor may include a first capacitor plate that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first capacitor plate form a second capacitor plate that is formed in the package. The thin dielectric spacer material in the transformer and capacitor allow for increased coupling factors and capacitance density in electrical components.

公开(公告)号：US11916604B2

公开(公告)日：2024-02-27

申请号：US16893660

申请日：2020-06-05

Applicant: Intel Corporation

Inventor： Diego Correas-Serrano ,  Georgios Dogiamis ,  Henning Braunisch ,  Neelam Prabhu Gaunkar ,  Telesphor Kamgaing ,  Thomas W. Brown ,  Stefano Pellerano

IPC: H03H7/30 ,  H04B15/00 ,  H04L25/03

CPC classification number: H04B15/00 ,  H04L25/03

Abstract: Embodiments may relate to a communications module comprising with a dispersion compensation module communicatively coupled between a baseband module and a radio frequency (RF) module. The dispersion compensation module may be configured to process a data signal at an intermediate frequency that is between a baseband frequency and a RF frequency. Other embodiments may be described or claimed.

公开(公告)号：US20230320021A1

公开(公告)日：2023-10-05

申请号：US18331474

申请日：2023-06-08

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Johanna M. Swan ,  Georgios Dogiamis ,  Henning Braunisch ,  Adel A. Elsherbini ,  Aleksandar Aleksov ,  Richard Dischler

IPC: H05K7/14 ,  H05K1/02 ,  H01P5/12 ,  H01P3/16

CPC classification number: H05K7/1489 ,  H05K1/0243 ,  H01P5/12 ,  H01P3/16 ,  H05K2201/10356 ,  H01L24/16

Abstract: Embodiments may relate an electronic device that includes a first server blade and a second server blade coupled with a chassis. The first and second server blades may include respective microelectronic packages. The electronic device may further include a waveguide coupled to the first and second server blades such that their respective microelectronic packages are communicatively coupled by the waveguide. Other embodiments may be described or claimed.

公开(公告)号：US11728290B2

公开(公告)日：2023-08-15

申请号：US16394514

申请日：2019-04-25

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Georgios Dogiamis ,  Johanna M. Swan ,  Aleksandar Aleksov ,  Telesphor Kamgaing ,  Henning Braunisch

IPC: H01L23/66 ,  H01L23/538 ,  H01L25/065 ,  H01L23/00 ,  H01L21/48 ,  H01L21/683 ,  H01L25/00

CPC classification number: H01L23/66 ,  H01L21/486 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/5386 ,  H01L24/16 ,  H01L25/0655 ,  H01L25/50 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6683 ,  H01L2224/16227 ,  H01L2924/1423 ,  H01L2924/1903

Abstract: Embodiments may relate to a microelectronic package that includes a substrate signal path and a waveguide. The package may further include dies that are communicatively coupled with one another by the substrate signal path and the waveguide. The substrate signal path may carry a signal with a frequency that is different than the frequency of a signal that is to be carried by the waveguide. Other embodiments may be described or claimed.

公开(公告)号：US11716826B2

公开(公告)日：2023-08-01

申请号：US16402055

申请日：2019-05-02

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Johanna M. Swan ,  Georgios Dogiamis ,  Henning Braunisch ,  Adel A. Elsherbini ,  Aleksandar Aleksov ,  Richard Dischler

IPC: H05K7/14 ,  H05K1/02 ,  H01P5/12 ,  H01P3/16 ,  H01L23/00 ,  H01L25/18 ,  H01L23/66 ,  H01L23/538 ,  H05K1/18

CPC classification number: H05K7/1489 ,  H01P3/16 ,  H01P5/12 ,  H05K1/0243 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/66 ,  H01L24/16 ,  H01L25/18 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2224/16225 ,  H05K1/181 ,  H05K2201/10356 ,  H05K2201/10378 ,  H05K2201/10734

Abstract: Embodiments may relate an electronic device that includes a first platform and a second platform coupled with a chassis. The platforms may include respective microelectronic packages. The electronic device may further include a waveguide coupled to the first platform and the second platform such that their respective microelectronic packages are communicatively coupled by the waveguide. Other embodiments may be described or claimed.

公开(公告)号：US11594801B2

公开(公告)日：2023-02-28

申请号：US16613070

申请日：2017-07-01

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Sasha Oster ,  Telesphor Kamgaing ,  Erich Ewy ,  Kenneth Shoemaker ,  Adel Elsherbini ,  Johanna Swan

IPC: B60R11/04 ,  H01P3/16 ,  B60R16/023 ,  B60W40/02

Abstract: Embodiments of the invention include autonomous vehicles and mm-wave systems for communication between components. In an embodiment the vehicle includes an electronic control unit (ECU). The ECU may include a printed circuit board (PCB) and a CPU die packaged on a CPU packaging substrate. In an embodiment, the CPU packaging substrate is electrically coupled to the PCB. The ECU may also include an external predefined interface electrically coupled to the CPU die. In an embodiment, an active mm-wave interconnect may include a dielectric waveguide, and a first connector coupled to a first end of the dielectric waveguide. In an embodiment, the first connector comprises a first mm-wave engine, and the first connector is electrically coupled to the external predefined interface. Embodiments may also include a second connector coupled to a second end of the dielectric waveguide, wherein the second connector comprises a second mm-wave engine.

公开(公告)号：US20220406754A1

公开(公告)日：2022-12-22

申请号：US17350074

申请日：2021-06-17

Applicant: Intel Corporation

Inventor： Abhishek A. Sharma ,  Wilfred Gomes ,  Telesphor Kamgaing

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/00

Abstract: Embodiments of the present disclosure relate to methods of fabricating IC devices using layer transfer and resulting IC devices, assemblies, and systems. An example method includes fabricating a device layer over a semiconductor support structure, the device layer comprising a plurality of frontend devices; attaching the semiconductor support structure with the device layer to a carrier substrate so that the device layer is closer to the carrier substrate than the semiconductor support structure; removing at least a portion of the semiconductor support structure to expose the device layer; and bonding a support structure of a non-semiconductor material having a dielectric constant that is smaller than a dielectric constant of silicon (e.g., a glass wafer) to the exposed frontend layer. The carrier substrate may then be removed.

公开(公告)号：US20220375939A1

公开(公告)日：2022-11-24

申请号：US17325617

申请日：2021-05-20

Applicant: Intel Corporation

Inventor： Abhishek A. Sharma ,  Wilfred Gomes ,  Telesphor Kamgaing

IPC: H01L27/108 ,  H01L23/15 ,  H01L49/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L21/48 ,  H01L21/02 ,  H01L29/66

Abstract: Embodiments of the present disclosure are based on recognition that using a glass support structure at the back side of an IC structure with TFT memory may advantageously reduce parasitic effects of front end of line (FEOL) devices (e.g., FEOL transistors) in the IC structure, compared to using a silicon-based (Si) support structure at the back. Arranging a support structure with a dielectric constant lower than that of Si at the back of an IC structure may advantageously decrease various parasitic effects associated with the FEOL devices of the IC structure, since such parasitic effects are typically proportional to the dielectric constant of the surrounding medium.