公开(公告)号：US07166869B2

公开(公告)日：2007-01-23

申请号：US10801038

申请日：2004-03-16

申请人： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa

发明人： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa

IPC分类号： H01L27/15 ,  H01L31/12

CPC分类号： H01S5/343 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2202 ,  H01S5/3201 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/3404 ,  H01S5/3412 ,  H01S5/3413 ,  H01S5/34333

摘要： A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.

公开(公告)号：US07122844B2

公开(公告)日：2006-10-17

申请号：US10144943

申请日：2002-05-13

申请人： Shuji Nakamura ,  Steven DenBaars ,  Max Batres ,  Michael Coulter

发明人： Shuji Nakamura ,  Steven DenBaars ,  Max Batres ,  Michael Coulter

IPC分类号： H01L33/00 ,  H01L31/00

CPC分类号： H01L21/67103 ,  H01L21/68771

摘要： A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

公开(公告)号：US20060224854A1

公开(公告)日：2006-10-05

申请号：US11139186

申请日：2005-05-27

申请人： Shuji Nakamura

发明人： Shuji Nakamura

IPC分类号： G06F12/00

CPC分类号： G06F3/0658 ,  G06F3/061 ,  G06F3/0631 ,  G06F3/067 ,  G06F11/201 ,  G06F11/2092 ,  G06F11/2094

摘要： The bandwidth of the inter-connection network between the clusters is quite narrower than that of the inter-connection network in the clusters. When the logical allocation technique is simply applied to a cluster storage system, there is created a logical partition associated with two or more clusters. It is not possible to create logical partitions of performance corresponding to resources allocated thereto. In a storage system including a first cluster and a second cluster, when a resource of the storage system is logically subdivided into logical partitions, a resource of the first cluster is allocated to one logical partition. The system may be configured such that the first and second clusters are connected via switches to disk drives. The system may also be configured such that when failure occurs in the first cluster, the second cluster continuously executes processing of the first cluster.

摘要翻译： 集群之间的互连网络的带宽比集群中的互连网络的带宽要窄得多。 当逻辑分配技术简单地应用于集群存储系统时，就创建了与两个或更多个集群相关联的逻辑分区。 不可能创建与分配给其的资源相对应的性能的逻辑分区。 在包括第一集群和第二集群的存储系统中，当存储系统的资源被逻辑地细分为逻辑分区时，第一集群的资源被分配给一个逻辑分区。 该系统可以被配置为使得第一和第二集群经由交换机连接到磁盘驱动器。 该系统还可以被配置为使得当在第一集群中发生故障时，第二集群连续执行第一集群的处理。

公开(公告)号：US20060110926A1

公开(公告)日：2006-05-25

申请号：US11263314

申请日：2005-10-31

申请人： Evelyn Hu ,  Shuji Nakamura ,  Elaine Haberer ,  Rajat Sharma

发明人： Evelyn Hu ,  Shuji Nakamura ,  Elaine Haberer ,  Rajat Sharma

IPC分类号： H01L21/302

CPC分类号： H01L21/30635 ,  B82Y20/00 ,  H01L33/10 ,  H01S5/1075 ,  H01S5/18316 ,  H01S5/2081 ,  H01S5/34333 ,  H01S2304/12

摘要： A method for locally controlling an electrical potential of a semiconductor structure or device, and hence locally controlling lateral and/or vertical photoelectrochemical (PEC) etch rates, by appropriate placement of electrically resistive layers or layers that impede electron flow within the semiconductor structure, and/or by positioning a cathode in contact with specific layers of the semiconductor structure during PEC etching.

公开(公告)号：US20060078022A1

公开(公告)日：2006-04-13

申请号：US11287339

申请日：2005-11-28

申请人： Tokuya Kozaki ,  Masahiko Sano ,  Shuji Nakamura ,  Shinichi Nagahama

发明人： Tokuya Kozaki ,  Masahiko Sano ,  Shuji Nakamura ,  Shinichi Nagahama

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/00

摘要： A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 μm and the etching depth is below the thickness of the p-side cladding layer of 0.1 μm and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 μm, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.

公开(公告)号：US20060069943A1

公开(公告)日：2006-03-30

申请号：US10986895

申请日：2004-11-15

申请人： Shuji Nakamura ,  Akira Fujibayashi

发明人： Shuji Nakamura ,  Akira Fujibayashi

IPC分类号： G06F11/00

CPC分类号： G06F3/0605 ,  G06F3/0631 ,  G06F3/0658 ,  G06F3/0683

摘要： To provide a storage system partitioned into logical partitions. A storage system includes: a plurality of disk drives; and a disk controller that is connected to the disk drives and reads/writes data from/into the disk drives, wherein the disk controller includes: a disk control unit that exchanges data with the disk drives; a channel control unit that exchanges data with another computer; a switch unit that is connected to the disk control unit and the channel control unit and exchanges data therewith; and a control unit that controls the disk control unit, the channel control unit, and the switch unit, and wherein the disk controller is partitioned into a plurality of logical partitions, the control unit controls the partitioning into the logical partitions, and the switch unit controls a data transmission band width of each logical partition by obtaining, for each piece of data to be exchanged, information indicating a logical partition to which the data belongs, and arbitrating data transmission for the logical partition.

摘要翻译： 提供分区为逻辑分区的存储系统。 存储系统包括：多个磁盘驱动器; 以及连接到所述磁盘驱动器并从/向所述磁盘驱动器读取/写入数据的磁盘控制器，其中所述磁盘控制器包括：磁盘控制单元，其与所述磁盘驱动器交换数据; 与另一计算机交换数据的信道控制单元; 连接到盘控制单元和信道控制单元并与其交换数据的开关单元; 以及控制单元，其控制盘控制单元，通道控制单元和开关单元，并且其中所述盘控制器被划分为多个逻辑分区，所述控制单元控制对所述逻辑分区的划分，并且所述开关单元 通过为每个待交换的数​​据获得指示数据所属的逻辑分区的信息，以及逻辑分区的数据发送的仲裁来控制每个逻辑分区的数据传输带宽。

公开(公告)号：US07015053B2

公开(公告)日：2006-03-21

申请号：US10700270

申请日：2003-11-04

申请人： Tokuya Kozaki ,  Masahiko Sano ,  Shuji Nakamura ,  Shinichi Nagahama

发明人： Tokuya Kozaki ,  Masahiko Sano ,  Shuji Nakamura ,  Shinichi Nagahama

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/00

摘要： A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 μm and the etching depth is below the thickness of the p-side cladding layer of 0.1 μm and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 μm, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.

公开(公告)号：US06940103B2

公开(公告)日：2005-09-06

申请号：US10600833

申请日：2003-06-23

申请人： Hiroyuki Kiyoku ,  Shuji Nakamura ,  Tokuya Kozaki ,  Naruhito Iwasa ,  Kazuyuki Chocho

发明人： Hiroyuki Kiyoku ,  Shuji Nakamura ,  Tokuya Kozaki ,  Naruhito Iwasa ,  Kazuyuki Chocho

IPC分类号： C23C16/04 ,  C23C16/30 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/16 ,  H01S5/02 ,  C30B23/04 ,  C30B25/04

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C23C16/042 ,  C23C16/303 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/16 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.

摘要翻译： 公开了一种生长具有非常少的晶体缺陷并可用作衬底的氮化物半导体晶体的方法。 本发明包括在包括具有主表面并由不同于氮化物半导体的材料制成的不同基底的支撑构件上形成第一选择性生长掩模的步骤，所述第一选择增长掩模具有多个第一窗口，用于选择性地暴露 支撑构件的上表面，以及通过使用气态3族元素源和气态氮源，从窗户露出的支撑构件的上表面生长氮化物半导体部分的步骤，直到氮化物半导体 在相邻窗口中生长的部分在选择性生长掩模的上表面上彼此结合。

公开(公告)号：US06883064B2

公开(公告)日：2005-04-19

申请号：US10076456

申请日：2002-02-19

申请人： Akira Yoshida ,  Shuji Nakamura

发明人： Akira Yoshida ,  Shuji Nakamura

IPC分类号： G06F12/08 ,  G06F3/06 ,  G06F12/00 ,  G06F13/00 ,  G06F13/12

CPC分类号： G06F3/067 ,  G06F3/0635 ,  G06F3/0689 ,  G06F12/0866

摘要： “Disk array system is presented wherein the plurality of disk array controlling units operate as the sole disk array controller so as to restrain the performance of the cache memory sections of the respective disk array controlling units from deteriorating owing to their physical packaging locations and to maximize the performance thereof in proportion to the number of the controlling units in use. Disk array controller is provided, which controller comprises a host switch interface section, the plurality of respective disk array controlling units provided with a channel interface section, a disc interface section and a cache memory section and a mutual connection network in connection with the channel interface sections, the disk interface sections and the cache memory sections of the respective disk array controlling units. Access performance to the cache memory sections that are dispersedly disposed between the respective disk array controlling units improves so as to enhance the performance of the disk array controller in proportion to the number of the disk array controlling units in use.”

摘要翻译： “提出了磁盘阵列系统，其中多个磁盘阵列控制单元用作唯一的磁盘阵列控制器，以便限制各个磁盘阵列控制单元的高速缓冲存储器部分的性能由于其物理封装位置而劣化并且最大化 其性能与所使用的控制单元的数量成比例，提供了磁盘阵列控制器，该控制器包括主机交换接口部分，多个相应的磁盘阵列控制单元，设置有通道接口部分，光盘接口部分和 高速缓冲存储器部分和与各个磁盘阵列控制单元的通道接口部分，磁盘接口部分和高速缓冲存储器部分相关联的互连网络。对分散地布置在相应的磁盘阵列之间的高速缓冲存储器部分的访问性能 控制单位有所改善，以提高生产力 磁盘阵列控制器的性能与正在使用的磁盘阵列控制单元的数量成比例。

公开(公告)号：US06756611B2

公开(公告)日：2004-06-29

申请号：US10261487

申请日：2002-10-02

申请人： Hiroyuki Kiyoku ,  Shuji Nakamura ,  Tokuya Kozaki ,  Naruhito Iwasa ,  Kazuyuki Chocho

发明人： Hiroyuki Kiyoku ,  Shuji Nakamura ,  Tokuya Kozaki ,  Naruhito Iwasa ,  Kazuyuki Chocho

IPC分类号： H01L2358

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C23C16/042 ,  C23C16/303 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/16 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.

摘要翻译： 公开了一种生长具有非常少的晶体缺陷并可用作衬底的氮化物半导体晶体的方法。 本发明包括在包括具有主表面并由不同于氮化物半导体的材料制成的不同基底的支撑构件上形成第一选择性生长掩模的步骤，所述第一选择增长掩模具有多个第一窗口，用于选择性地暴露 支撑构件的上表面，以及通过使用气态3族元素源和气态氮源，从窗户露出的支撑构件的上表面生长氮化物半导体部分的步骤，直到氮化物半导体 在相邻窗口中生长的部分在选择性生长掩模的上表面上彼此结合。