Abstract:
A fully integrated, phase locked loop (PLL) having improved jitter characteristics uses the same digital/analog converter (DAC) that is normally used to control the time constant of the low pass loop filter to control the value of a capacitance connected between the output of a voltage-to-current converting input stage of the voltage controlled oscillator and ground. The capacitance introduces a third pole in the loop's transfer function. In this way, the separation in the frequency domain between the zero and the third pole of the transfer function is kept constant; thus, the damping factor remains constant while the .omega..sub.0 of the PLL is varied.
Abstract:
An architecture for an electronic controller operated using fuzzy logic, including an input section with a plurality of inputs for analog or digital signals, a central control unit provided with memories wherein fuzzy logic membership functions are stored) and a defuzzyfier section has its input section composed of a plurality of fuzzyfiers arranged in parallel and independent of one another, each fuzzyfier including an analog input and a digital input for receving signals from external sensors, and digital outputs connected to the input of a corresponding read-only memory of the central unit to select the address of a memory word.Membership functions are stored and retrieved from a memory according to a method which simplifies addressing and reduces the number of required accesses.
Abstract:
A manufacturing process for an integrated circuit which includes at least one vertical-current-flow MOS transistor. The patterned photoresist which screens the body implant is also used to mask the etching of a nitride layer over a pad oxide. After the photoresist is cleared, the nitride pattern is transferred into the oxide, and the resulting oxide/nitride stack is used to mask the source implant. The nitride/oxide stack is then removed, the gate oxide is grown, and the gate layer is then deposited.
Abstract:
A method and device for measuring the switching noise of an audio amplifier by measuring the energy of the noise signal at the output of the audio amplifier as the amplifier is switched from one operating condition to another by a control signal, and after first weighing the energy according to the frequency and volume sensitivity of the human ear. The device comprises a control signal generator; an audio band filter connected to the output of the audio amplifier; a meter for measuring the power of the filtered signal; and an integrating element for calculating the energy of the filtered signal.
Abstract:
A device including a load connected by a selection circuit to a number of bit lines, and a load connected to a reference cell, for detecting the current in the selected bit line and in the reference cell. The load connected to the bit lines comprises a transistor, and the reference load comprises two current paths, each formed by one transistor. One of the two transistors is diode-connected, and the other is switchable by a switching network connected to the gate terminal of the respective transistor, for turning it off when only one reference current path is to be enabled, and for diode-connecting it when both the reference current paths are to be enabled.
Abstract:
A bistable logic network of the sequential type, responsive to the edges of input signals, comprising first and second input SR flip-flops which are connected to an output SR flip-flop through two transfer and block logic gates.Each of said logic gates has two input terminals connected to the output terminal and to one input terminal of an input flip-flop.The output terminals of the output flip-flop are feedback connected to the other input terminals of the two input flip-flops.
Abstract:
An output buffer current slew rate control integrated circuit includes an output buffer having first, MOS-type transistor means for supplying a current to a load impedance. Current generator means generate a constant current and are activated upon switching of an input signal of the output buffer. The current generator means drive a control input of the first transistor means for driving the first transistor means with a driving voltage having a slew rate determined by the constant current.
Abstract:
An electronic switch having a reduced body effect includes first and second switch terminals. A first transistor of a first type has a control terminal, a first substrate coupled to a first voltage level, and first and second drive terminals respectively coupled to the first and second switch terminals. A second transistor of a second type has a control terminal, a second substrate, a first drive terminal coupled to the second substrate and to the first switch terminal, and a second drive terminal. A third transistor of the second type has a control terminal, a third substrate, a first drive terminal coupled to the second drive terminal of the second transistor, and a second drive terminal coupled to the third substrate and to the second switch terminal. A fourth transistor of a first type has a control terminal, a fourth substrate, a first drive terminal coupled to the second drive terminal of the second transistor, and a second drive terminal coupled to the fourth substrate and a first voltage level.
Abstract:
A circuit for resetting initial conditions upon starting of an integrated circuit device has null current consumption under normal operating conditions. The circuit includes an input stage, which is a threshold circuit, and pilots through an input node an output stage which is a trigger circuit with hysteresis. The input node of the output stage is connected to ground through a condenser and is connected through a transistor to a connection node between a condenser and a diode connected transistor which are inserted between the power supply and ground. The gate terminal of the first transistor is grounded.
Abstract:
A low-noise PNP transistor comprising a cutoff region laterally surrounding the emitter region in the surface portion of the transistor. The cutoff region has such a conductivity is to practically turn off the surface portion of the transistor, so that the transistor operates mainly in the bulk portion. The cutoff region is formed by an N.sup.+ -type enriched base region arranged between the emitter region and the collector region.