Metrology tool with combined XRF and SAXS capabilities

    公开(公告)号:US09778213B2

    公开(公告)日:2017-10-03

    申请号:US14461416

    申请日:2014-08-17

    CPC classification number: G01N23/223 G01N23/201 G01N2223/6116

    Abstract: Methods and systems for performing simultaneous X-ray Fluorescence (XRF) and small angle x-ray scattering (SAXS) measurements over a desired inspection area of a specimen are presented. SAXS measurements combined with XRF measurements enables a high throughput metrology tool with increased measurement capabilities. The high energy nature of x-ray radiation penetrates optically opaque thin films, buried structures, high aspect ratio structures, and devices including many thin film layers. SAXS measurements of a particular location of a planar specimen are performed at a number of different out of plane orientations. This increases measurement sensitivity, reduces correlations among parameters, and improves measurement accuracy. In addition, specimen parameter values are resolved with greater accuracy by fitting data sets derived from both SAXS and XRF measurements based on models that share at least one material parameter. The fitting can be performed sequentially or in parallel.

    X-Ray Scatterometry Metrology For High Aspect Ratio Structures

    公开(公告)号:US20170167862A1

    公开(公告)日:2017-06-15

    申请号:US15230336

    申请日:2016-08-05

    CPC classification number: G01B15/02 G01B2210/56 G01N23/201 G01N23/2055

    Abstract: Methods and systems for characterizing dimensions and material properties of high aspect ratio, vertically manufactured devices using transmission, small-angle x-ray scattering (T-SAXS) techniques are described herein. Exemplary structures include spin transfer torque random access memory (STT-RAM), vertical NAND memory (V-NAND), dynamic random access memory (DRAM), three dimensional FLASH memory (3D-FLASH), resistive random access memory (Re-RAM), and PC-RAM. In one aspect, T-SAXS measurements are performed at a number of different orientations that are more densely concentrated near the normal incidence angle and less densely concentrated at orientations that are further from the normal incidence angle. In a further aspect, T-SAXS measurement data is used to generate an image of a measured structure based on the measured intensities of the detected diffraction orders. In another further aspect, a metrology system is configured to generate models for combined x-ray and optical measurement analysis.

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