利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

63 条记录 (耗时 0.026 秒)

    Thermoelectric conversion device, and cooling method and power generating method using the device
    22.
    发明授权
    Thermoelectric conversion device, and cooling method and power generating method using the device 有权
    热电转换装置，以及使用该装置的冷却方法和发电方法

    公开(公告)号：US07312392B2

    公开(公告)日：2007-12-25

    申请号：US11194685

    申请日：2005-08-02

    申请人： Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Hideaki Adachi ,  Akihiro Odagawa ,  Yasunari Sugita

    发明人： Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Hideaki Adachi ,  Akihiro Odagawa ,  Yasunari Sugita

    IPC分类号： H01L35/22

    CPC分类号： H01L35/34 ,  H01L35/22

    摘要： The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide. The c axis of the layered substance made of the electrically conducting layer and the electrically insulating layer is parallel to an in-plane direction of the substrate, and a pair of electrodes are arranged so that electric current flows along the c axis.

    摘要翻译： 本发明提供一种具有高热电转换性能的热电转换装置。 在该装置中，不同于本领域的普通知识的结构，电极被布置成电流沿分层物质的层间方向流动。 在根据本发明的热电转换装置中，通过外延生长获得热电转换膜，并且通过交替地布置导电层和电绝缘层而形成; 导电层具有八面体晶体结构，其中过渡金属原子M位于其中心，氧原子位于其顶点; 并且电绝缘层包括金属元素或结晶金属氧化物。 由导电层和电绝缘层制成的层状物质的c轴平行于衬底的面内方向，并且一对电极被布置成使得电流沿c轴流动。

    Magnetoresistance element and magnetoresistance storage element and magnetic memory
    25.
    发明授权
    Magnetoresistance element and magnetoresistance storage element and magnetic memory 失效
    磁电阻元件和磁阻存储元件和磁存储器

    公开(公告)号：US07005691B2

    公开(公告)日：2006-02-28

    申请号：US10470670

    申请日：2002-06-04

    申请人： Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Masahiro Deguchi

    发明人： Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Masahiro Deguchi

    IPC分类号： H01L31/119

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/324 ,  H01F10/3254 ,  H01L43/08 ,  Y10S257/903 ,  Y10S257/904

    摘要： A magnetoresistance element, wherein a first electric conductor is so formed as to contact almost the center of the surface opposite to a non-magnetic layer of a first ferromagnetic layer so formed as to sandwich, along with a second ferromagnetic layer, the non-magnetic layer, and an insulator so formed as to cover at least the side surface of the first ferromagnetic layer and the non-magnetic layer is formed so as to cover the peripheral edge of the surface of the first ferromagnetic layer, whereby it is possible to prevent a leakage current from flowing from the first electric conductor to a second electric conductor along the side surfaces of the first ferromagnetic layer, the non-magnetic layer and the second ferromagnetic layer, and to make uniform a bias current running from the first electric conductor to the second electric conductor to thereby restrict variations in magnetoresistance characteristics such as MR value and junction resistance.

    摘要翻译： 一种磁电阻元件，其中第一导电体形成为几乎接触与第一铁磁层的非磁性层相对的表面的中心，所述第一铁磁层的形成为与第二铁磁层一起夹在中间，非磁性层 层和形成为至少覆盖第一铁磁层的侧表面的绝缘体，并且非磁性层形成为覆盖第一铁磁层的表面的周边边缘，由此可以防止 漏电流从第一导电体沿着第一铁磁层，非磁性层和第二铁磁层的侧面流向第二导电体，并且使从第一导电体流出的偏置电流均匀 第二导体，从而限制诸如MR值和结电阻的磁阻特性的变化。

    Magnetic switching device and magnetic memory using the same
    28.
    发明授权
    Magnetic switching device and magnetic memory using the same 有权
    磁性开关器件和使用其的磁性存储器

    公开(公告)号：US06839273B2

    公开(公告)日：2005-01-04

    申请号：US10783286

    申请日：2004-02-20

    申请人： Akihiro Odagawa ,  Nozomu Matsukawa ,  Yasunari Sugita

    发明人： Akihiro Odagawa ,  Nozomu Matsukawa ,  Yasunari Sugita

    IPC分类号： G11B5/39 ,  G11C11/15 ,  H01F10/18 ,  H01F10/193 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08 ,  G11C11/14

    CPC分类号： H01F10/1936 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/15 ,  H01F1/405 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

    摘要： A magnetic switching device is provided, which has a configuration different from that of a conventional example and is capable of enhancing an energy conversion efficiency for changing the magnetized state of a magnetic substance. A magnetic memory using the magnetic switching device also is provided The magnetic switching device includes a magnetic layer, a transition layer magnetically coupled to the magnetic layer, and a carrier supplier including at least one selected from metal and a semiconductor. The transition layer and the carrier supplier are placed in such a manner that a voltage can be applied between the transition layer and the carrier supplier. The transition layer undergoes a non-ferromagnetism—ferromagnetism transition by the application of a voltage, and the magnetized state of the magnetic layer is changed by the transition of the transition layer.

    摘要翻译： 提供一种磁性开关装置，其具有与常规示例不同的配置，并且能够提高用于改变磁性物质的磁化状态的能量转换效率。 还提供了使用磁开关装置的磁存储器。磁开关装置包括磁性层，磁耦合到磁性层的过渡层和包括从金属和半导体中选择的至少一种的载体供体。 过渡层和载体供给器的放置方式是可以在过渡层和载体供应者之间施加电压。 过渡层通过施加电压而经历非铁磁 - 铁磁转变，并且通过过渡层的转变改变磁性层的磁化状态。

    Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device
    30.
    发明授权
    Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device 失效
    磁头包括多层磁阻器件和用于将磁通从介质引入到磁阻器件的磁轭

    公开(公告)号：US06785100B2

    公开(公告)日：2004-08-31

    申请号：US09829400

    申请日：2001-04-09

    申请人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

    发明人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/11 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/3925 ,  G11B5/398 ,  G11B5/40 ,  G11B2005/3996

    摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.

    摘要翻译： 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。