公开(公告)号：US20130131051A1

公开(公告)日：2013-05-23

申请号：US13477143

申请日：2012-05-22

Applicant: LORIN A. THOMPSON, III ,  Jianliang Shi ,  Yong-Jin Wu ,  Lawrence R. Marcin ,  Ramkumar Rajamani ,  Mendi A. Higgins

Inventor： LORIN A. THOMPSON, III ,  Jianliang Shi ,  Yong-Jin Wu ,  Lawrence R. Marcin ,  Ramkumar Rajamani ,  Mendi A. Higgins

IPC: C07D279/08 ,  C07D513/04 ,  C07D417/10

CPC classification number: C07D279/08 ,  C07D417/04 ,  C07D417/10 ,  C07D417/12 ,  C07D513/04

Abstract: Compounds of formula (I), including pharmaceutically acceptable salts thereof, are set forth herein: wherein X is selected from the group of CH2, O, and NR2; m=0 or 1; R1 at each instance is selected from the group of halogen, hydroxy, amino, C1-4alkylamino, C1-4dialkylamino, haloC1-4 alkyl, CN, C1-C6 alkyl or cycloalkyl, C1-C6 alkoxy, and C2-C4 alkynyl; L is a bond, —NHCO—, —NH—, or L and Z together can be absent; Z is a C6-C10-aryl group or a 5-10 membered heterocyclic group which can be further substituted with from 0-3 substituents selected from the group of halogen, haloC1-4 alkoxy, 4-methoxyphenyl, hydroxy, amino, C1-4alkylamino, C1-4dialkylamino, haloC1-4 alkyl, CN, C1-C6 alkyl or cycloalkyl, C1-C6 alkoxy, and C2-C4 alkynyl; R2 is selected from the group of hydrogen, benzyl, C1-C6 alkyl or cycloalkyl, C1-C6 alkoxy, acetyl, and methanesulfonyl; and R3, R4 and R5 are independently selected from hydrogen or C1-4alkyl.

Abstract translation: 包括其药学上可接受的盐的式（I）化合物在本文中阐述：其中X选自CH 2，O和NR 2; m = 0或1; 每个实例的R 1选自卤素，羟基，氨基，C 1-4烷基氨基，C 1-4二烷基氨基，卤代C 1-4烷基，CN，C 1 -C 6烷基或环烷基，C 1 -C 6烷氧基和C 2 -C 4炔基; L是键，-NHCO-，-NH-或L和Z可以不存在; Z是可以被0-3个选自卤素，卤代C 1-4烷氧基，4-甲氧基苯基，羟基，氨基，C 1 -C 10 - 芳基的取代基取代的C 6 -C 10 - 芳基或5-10元杂环基， C 1-4烷基氨基，卤代C 1-4烷基，CN，C 1 -C 6烷基或环烷基，C 1 -C 6烷氧基和C 2 -C 4炔基; R 2选自氢，苄基，C 1 -C 6烷基或环烷基，C 1 -C 6烷氧基，乙酰基和甲磺酰基; 并且R 3，R 4和R 5独立地选自氢或C 1-4烷基。

公开(公告)号：US08441136B2

公开(公告)日：2013-05-14

申请号：US13560200

申请日：2012-07-27

Applicant: Wen-Chih Chiou ,  Weng-Jin Wu ,  Shau-Lin Shue

Inventor： Wen-Chih Chiou ,  Weng-Jin Wu ,  Shau-Lin Shue

IPC: H01L23/29

CPC classification number: H01L23/49811 ,  H01L21/561 ,  H01L21/6836 ,  H01L21/76898 ,  H01L24/81 ,  H01L24/94 ,  H01L25/50 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/81001 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00

Abstract: This description relates to a semiconductor device including a wafer having a first surface and a second surface opposite to the first surface and a carrier attached to the first surface of the wafer by an adhesive layer, a portion of the adhesive layer adjacent to an edge of the wafer is exposed. The semiconductor device further includes a protection layer to cover the exposed portion of the adhesive layer. The semiconductor device further includes a plurality of dies attached to the second surface and a molding compound encapsulating the plurality of dies.

Abstract translation: 本说明书涉及包括具有第一表面和与第一表面相对的第二表面的晶片的半导体器件和通过粘合剂层附着到晶片的第一表面的载体，粘合剂层的与边缘的边缘相邻的部分 晶片暴露。 半导体器件还包括保护层以覆盖粘合剂层的暴露部分。 半导体器件还包括附接到第二表面的多个管芯和封装多个管芯的模制化合物。

公开(公告)号：US08426026B2

公开(公告)日：2013-04-23

申请号：US12755538

申请日：2010-04-07

Applicant: Yu Qi ,  Nan-Xing Hu ,  Jin Wu

Inventor： Yu Qi ,  Nan-Xing Hu ,  Jin Wu

IPC: G03G15/16

CPC classification number: G03G15/161 ,  G03G15/162 ,  Y10T428/24994 ,  Y10T428/26 ,  Y10T428/2918 ,  Y10T428/3154 ,  Y10T428/31721

Abstract: Exemplary embodiments provide an intermediate transfer member used for electrophotographic devices, wherein an outermost layer of the intermediate transfer layer can include a plurality of fluoroelastomer-coated carbon nanotubes dispersed in a fluoroplastic matrix to provide desirable surface properties useful for the intermediate transfer member.

Abstract translation: 示例性实施方案提供了用于电子照相设备的中间转印部件，其中中间转印层的最外层可以包括分散在氟塑料基质中的多个含氟弹性体涂覆的碳纳米管，以提供对于中间转印部件有用的期望的表面性质。

公开(公告)号：US08410202B1

公开(公告)日：2013-04-02

申请号：US13280088

申请日：2011-10-24

Applicant: Jin Wu ,  Lanhui Zhang ,  Lin Ma

Inventor： Jin Wu ,  Lanhui Zhang ,  Lin Ma

IPC: C08K5/34 ,  C08K5/00 ,  C08K5/02 ,  C08K5/05 ,  C08K5/07 ,  C08G18/42 ,  C08G77/00 ,  C08F283/00 ,  C08J3/09

CPC classification number: C08L71/00 ,  C08G65/007 ,  C08G2650/48 ,  C08L79/04

Abstract: A mixture of a functionalized polyfluoropolyether and a benzoxazine resin in a weight ratio of from about 1/99 to about 99/1.

Abstract translation: 官能化聚氟聚醚和苯并恶嗪树脂的重量比为约1/99至约99/1的混合物。

公开(公告)号：US20130075892A1

公开(公告)日：2013-03-28

申请号：US13246553

申请日：2011-09-27

Applicant: Jing-Cheng Lin ,  Weng-Jin Wu ,  Ying-Ching Shih ,  Jui-Pin Hung ,  Szu Wei Lu ,  Shin-Puu Jeng ,  Chen-Hua Yu

Inventor： Jing-Cheng Lin ,  Weng-Jin Wu ,  Ying-Ching Shih ,  Jui-Pin Hung ,  Szu Wei Lu ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC: H01L23/48 ,  H01L21/50

CPC classification number: H01L23/48 ,  H01L21/6835 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0652 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/83

Abstract: A method for fabricating three dimensional integrated circuits comprises providing a wafer stack wherein a plurality of semiconductor dies are mounted on a first semiconductor die, forming a molding compound layer on the first side of the first semiconductor die, wherein the plurality of semiconductor dies are embedded in the molding compound layer. The method further comprises grinding a second side of the first semiconductor die until a plurality of through vias become exposed, attaching the wafer stack to a tape frame and dicing the wafer stack to separate the wafer stack into a plurality of individual packages.

Abstract translation: 一种用于制造三维集成电路的方法包括：提供其中多个半导体管芯安装在第一半导体管芯上的晶片堆叠，在第一半导体管芯的第一侧上形成模塑料层，其中多个半导体管芯被嵌入 在模塑料层中。 该方法还包括研磨第一半导体管芯的第二面直到多个通孔露出，将晶片堆叠附着到带框架上并切割晶片堆叠以将晶片堆叠分离成多个单独的封装。

公开(公告)号：US20130052577A1

公开(公告)日：2013-02-28

申请号：US13214464

申请日：2011-08-22

Applicant: Jin WU

Inventor： Jin WU

IPC: G03G5/047 ,  C08F236/12

CPC classification number: C08F236/12 ,  G03G5/0535 ,  G03G5/0546 ,  G03G5/0553 ,  G03G5/0564 ,  G03G5/0592 ,  G03G5/0596 ,  G03G5/0614 ,  G03G5/142

Abstract: A photoconductor that includes an optional anticurl layer, optional supporting substrate, an optional ground plane layer, an optional hole blocking layer, an optional ground strip segment, an optional adhesive layer, a photogenerating layer, and a charge transport layer that contains an acrylonitrile-butadiene-styrene polymer.

Abstract translation: 一种光电导体，其包括任选的防锈层，可选的支撑衬底，可选的接地平面层，可选的空穴阻挡层，任选的接地条段，可选的粘合剂层，光生代层和电荷传输层，其含有丙烯腈 - 丁二烯 - 苯乙烯聚合物。

公开(公告)号：US08377523B2

公开(公告)日：2013-02-19

申请号：US12493535

申请日：2009-06-29

Applicant: Jin Wu

Inventor： Jin Wu

IPC: B41M5/40

CPC classification number: G03G15/161 ,  G03G15/162 ,  Y10T428/31507 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: An intermediate transfer media, such as a belt, that includes a first supporting substrate, such as a polyimide substrate layer, and a second layer of a silicone containing polyamideimide layer. Also, the intermediate transfer media can include a silicone containing polyamideimide single layer.

Abstract translation: 包括诸如聚酰亚胺基底层的第一支撑基底和含硅酮聚酰胺酰亚胺层的第二层的中间转印介质，例如带。 此外，中间转印介质可以包括含硅氧烷的聚酰胺酰亚胺单层。

公开(公告)号：US08362593B2

公开(公告)日：2013-01-29

申请号：US13168351

申请日：2011-06-24

Applicant: Ku-Feng Yang ,  Weng-Jin Wu ,  Wen-Chih Chiou ,  Chen-Hua Yu

Inventor： Ku-Feng Yang ,  Weng-Jin Wu ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC: H01L29/06

CPC classification number: H01L21/486 ,  H01L21/76898 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/13009 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/32145 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01019 ,  H01L2224/11

Abstract: A system and method for stacking semiconductor dies is disclosed. A preferred embodiment comprises forming through-silicon vias through the wafer, protecting a rim edge of the wafer, and then removing the unprotected portions so that the rim edge has a greater thickness than the thinned wafer. This thickness helps the fragile wafer survive further transport and process steps. The rim edge is then preferably removed during singulation of the individual dies from the wafer.

Abstract translation: 公开了一种用于堆叠半导体管芯的系统和方法。 优选实施例包括形成通过晶片的穿硅通孔，保护晶片的边缘边缘，然后去除未受保护的部分，使得边缘边缘的厚度大于薄的晶片。 该厚度有助于脆弱的晶片在进一步的运输和工艺步骤中保持生存。 然后优选在从晶片分离单个模具期间移除边缘。

公开(公告)号：US08361624B2

公开(公告)日：2013-01-29

申请号：US13114674

申请日：2011-05-24

Applicant: Jin Wu

Inventor： Jin Wu

IPC: B32B27/28

CPC classification number: C08G64/12 ,  G03G15/162 ,  Y10T428/31507 ,  Y10T428/31544 ,  Y10T428/31663 ,  Y10T428/31721

Abstract: An intermediate transfer member that includes spirodilactam polycarbonates, mixtures of spirodilactam polycarbonates or copolymers of spirodilactam polycarbonates, an optional polysiloxane, and an optional conductive filler component.

Abstract translation: 包括螺内酰胺聚碳酸酯，螺内酰胺聚碳酸酯的混合物或螺内酰胺聚碳酸酯的共聚物，任选的聚硅氧烷和任选的导电填料组分的中间转移构件。

公开(公告)号：US08354458B2

公开(公告)日：2013-01-15

申请号：US12871236

申请日：2010-08-30

Applicant: Jin Wu ,  Jonathan H. Herko ,  Lanhui Zhang ,  Lin Ma

Inventor： Jin Wu ,  Jonathan H. Herko ,  Lanhui Zhang ,  Lin Ma

IPC: C08F2/50 ,  C08J3/28 ,  G03G15/00 ,  G03G15/14

CPC classification number: H01B1/24 ,  G03G15/162 ,  H01B1/125

Abstract: A UV curable intermediate transfer media, such as a belt, that includes for example, a first supporting substrate, such as a polyimide substrate layer, and a second surface layer of a mixture of a dendritic, crosslinked, or branched polyester polyol acrylate, an acrylate, an optional vinyl monomer, and a photoinitiator component.

Abstract translation: 包括例如聚酰亚胺基层的第一支撑基板和树枝状，交联或支化的聚酯多元醇丙烯酸酯的混合物的第二表面层的UV固化中间转印介质，例如带， 丙烯酸酯，任选的乙烯基单体和光引发剂组分。