公开(公告)号：US5374834A

公开(公告)日：1994-12-20

申请号：US134965

申请日：1993-10-12

Applicant: Michael W. Geis ,  Stephanie A. Gajar ,  Nancy Geis

Inventor： Michael W. Geis ,  Stephanie A. Gajar ,  Nancy Geis

IPC: B03C5/02 ,  G01N27/447 ,  H01L29/78

CPC classification number: G01N27/44752 ,  B03C5/026 ,  B03C5/028 ,  Y10S257/912

Abstract: An ionic liquid-channel charge-coupled device that separates ions in a liquid sample according to ion mobility characteristics includes a channel having an inner wall that has a matrix liquid disposed within. An insulating material surrounds the channel, and an introduction element introduces a liquid sample into the channel. The sample is preferably a liquid solution that has at least one ionic specie present in the solution. The device further includes a gating element that establishes at least one charge packet in the channel in response to an externally applied input sisal, and a transport element that induces the charge packet to migrate through the channel. The gate element can be a plurality of spaced-apart, electrically conductive, gate structures that are alternately disposable between a high voltage state and a low voltage state. The transport element further includes an application element that applies a variable voltage to the gating element. This application of voltage induces the charge packets to form under the gate structures and, when the voltage applied to an adjacent gate has a higher potential, induces the packet to migrate through the channel in that direction.

Abstract translation: 根据离子迁移率特性分离液体样品中的离子的离子液体通道电荷耦合器件包括具有设置在其内的基质液体的内壁的通道。 绝缘材料围绕通道，引入元件将液体样品引入通道。 样品优选是溶液中存在至少一种离子物质的液体溶液。 该装置还包括门控元件，其响应于外部施加的输入剑麻建立信道中的至少一个充电分组，以及诱导电荷分组迁移通过该信道的传输元件。 栅极元件可以是多个间隔开的导电的栅极结构，其在高电压状态和低电压状态之间交替地是一次性的。 运输元件还包括向选通元件施加可变电压的应用元件。 这种电压的应用引起电荷分组形成在栅极结构之下，并且当施加到相邻栅极的电压具有较高电位时，引起分组沿着该方向迁移通过通道。

公开(公告)号：US5002899A

公开(公告)日：1991-03-26

申请号：US498479

申请日：1990-03-22

Applicant: Michael W. Geis ,  Mordechai Rothschild ,  Daniel J. Ehrlich

Inventor： Michael W. Geis ,  Mordechai Rothschild ,  Daniel J. Ehrlich

IPC: H01L21/04 ,  H01L21/268

CPC classification number: H01L21/043 ,  H01L21/0435 ,  H01L21/268

Abstract: A method for forming ohmic contacts on diamond substrates, where, by irradiating a diamond substrate with radiation having a wavelength in the neighborhood of 193 nm, regions of enhanced electrical conductivity may be formed without substantially heating the substrate surface. Metal films may be applied to obtain ohmic or Schottky type contacts on the irradiated sites. The invention may be used to form regions of anisotropic and isotropic enhanced conductivity. Regions of anisotropic conductivity may be employed as polarizing optical devices.

Abstract translation: 一种用于在金刚石基底上形成欧姆接触的方法，其中通过用金刚石衬底辐射具有193nm附近的波长的辐射，可以在基本上不加热衬底表面的情况下形成增强导电性的区域。 可以施加金属膜以在辐照位置上获得欧姆或肖特基型接触。 本发明可用于形成各向异性和各向同性增强导电性的区域。 可以采用各向异性导电性区域作为偏振光学器件。

公开(公告)号：US4734152A

公开(公告)日：1988-03-29

申请号：US73905

申请日：1987-07-13

Applicant: Michael W. Geis ,  Nikolay N. Efremow ,  Stella W. Pang

Inventor： Michael W. Geis ,  Nikolay N. Efremow ,  Stella W. Pang

IPC: H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/465 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

CPC classification number: H01L21/30621 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/465

Abstract: A new anisotropic dry etching system using a hot jet tube to heat and dissociate non-reactive source gas to form a directed flux of reactive specie or radicals for etching materials through openings in a resist or a reusable stencil of SiN.sub.x wherein x is in the range of 1.5 to 0.5. Si and GaAs may be etched using Cl.sub.2, F.sub.3, Br.sub.2 or SF.sub.6 source gasses. Pb or Hg, Cd, Te may be etched using n-butane, dimethyl ether or acetone as a source gas for CH.sub.3 radicals. The tube may be formed of tungsten or where fluorine is used as a source gas, an irridium tube is preferred. Alternatively, a tube formed of rhenium or an alloy of rhenium and tungsten is preferred for some applications.

Abstract translation: 一种新的各向异性干蚀刻系统，其使用热喷射管来加热和解离非反应性源气体，以形成反应物质或自由基的定向通量，以通过SiN x的抗蚀剂或可再利用的模板中的开口蚀刻材料，其中x在 为1.5〜0.5。 可以使用Cl2，F3，Br2或SF6源气体来蚀刻Si和GaAs。 可以使用正丁烷，二甲醚或丙酮作为CH3自由基的源气体来蚀刻Pb或Hg，Cd，Te。 管可以由钨形成或者使用氟作为原料气体，优选为铱管。 或者，对于一些应用，优选由铼或铼和钨的合金形成的管。

公开(公告)号：US4670088A

公开(公告)日：1987-06-02

申请号：US828601

申请日：1986-02-11

Applicant: Bor-Yeu Tsaur ,  John C. C. Fan ,  Michael W. Geis

Inventor： Bor-Yeu Tsaur ,  John C. C. Fan ,  Michael W. Geis

IPC: C30B13/00 ,  C30B13/06 ,  C30B27/00 ,  H01L21/20 ,  H01L21/324 ,  C30B19/00

CPC classification number: H01L21/324 ,  C30B13/00 ,  C30B13/06 ,  C30B27/00 ,  C30B29/60 ,  H01L21/2022 ,  Y10S148/134

Abstract: An improved method and apparatus for crystallizing amorphous or polycrystalline material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and single crystalline seed material is disposed in contact and/or adjacent to or with at least a portion of the material which is to be crystallized. A layer of material which serves as a "wetting agent" is then formed over the material to be crystallized. The structure thus formed is subjected to a heat treatment which melts the material being crystallized and when the material solidifies its crystalline structure is substantially epitaxial based on the seed material. The "wetting agent" layer serves to prevent deleterious balling up of the material during crystallization.

Abstract translation: 公开了一种用于结晶非晶或多晶材料的改进方法和装置。 在本发明中，将要结晶的材料形成在基底上，并且将单晶种子材料设置成接触和/或邻近或与要结晶的材料的至少一部分接触。 然后在要结晶的材料上形成用作“润湿剂”的材料层。 对由此形成的结构进行热处理，该热处理熔化正在结晶的材料，并且当材料固化其晶体结构基于种子材料基本上是外延的。 “润湿剂”层用于防止在结晶过程中材料的有害的滚珠。

公开(公告)号：US08818150B2

公开(公告)日：2014-08-26

申请号：US11731338

申请日：2007-03-30

Applicant: Matthew E. Grein ,  Theodore M. Lyszczarz ,  Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Yoon Jung

Inventor： Matthew E. Grein ,  Theodore M. Lyszczarz ,  Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Yoon Jung

IPC: G02B6/26

CPC classification number: G02F1/025 ,  B82Y20/00 ,  G02F1/0136

Abstract: Method and apparatus for modulation of both the intensity and the polarization of radiation in silicon waveguides by applying a biasing voltage to the waveguide.

Abstract translation: 通过向波导施加偏置电压来调制硅波导中的辐射的强度和极化两者的方法和装置。

公开(公告)号：US07880204B2

公开(公告)日：2011-02-01

申请号：US11541975

申请日：2006-10-02

Applicant: Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Matthew E. Grein ,  Robert T. Schulein ,  Jung U. Yoon ,  Franz Xaver Kaertner ,  Fuwan Gan ,  Theodore M. Lyszczarz

Inventor： Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Matthew E. Grein ,  Robert T. Schulein ,  Jung U. Yoon ,  Franz Xaver Kaertner ,  Fuwan Gan ,  Theodore M. Lyszczarz

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/144 ,  H01L31/102

Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.

Abstract translation: 硅光电检测器包含具有顶表面和底表面的绝缘基底。 硅层位于绝缘基板的顶表面上，其中硅层包含中心区域，中心区域的厚度大于硅层的其余部分。 顶部二氧化硅层位于中心区域的顶表面上。 中心区域的左翼和中心区域的右翼被掺杂。 硅光电探测器还具有位于中心区域内的有源区域，其中有源区域包含定制的晶体缺陷 - 杂质组合和氧原子。

公开(公告)号：US06413781B1

公开(公告)日：2002-07-02

申请号：US09287591

申请日：1999-04-06

Applicant: Michael W. Geis ,  Roderick R. Kunz ,  Margaret B. Stern

Inventor： Michael W. Geis ,  Roderick R. Kunz ,  Margaret B. Stern

IPC: G01N2500

CPC classification number: G01N1/40 ,  G01N30/30 ,  G01N2001/022 ,  Y10T436/25375 ,  Y10T436/255 ,  G01N2030/3015 ,  G01N2030/3076

Abstract: The method and apparatus of the invention create a dynamic Soret effect for propelling a target chemical constituent along a pathway. A moving temperature profile impressed upon the pathway produces consecutive alternating warmer and cooler zones along the path which transport components of a mixture down the path according to their respective diffusivities. In one embodiment, the invention provides a dynamic thermophoretic concentrator for separating a target chemical constituent from a mixture of components on the basis of diffusion coefficient by using alternate forward and backward motion of a temperature profile along the pathway, thereby accumulating an ultimate concentration of the target constituent greater than its initial concentration in the mixture.

Abstract translation: 本发明的方法和装置产生用于沿着途径推进目标化学成分的动态Soret效应。 沿路径移动的移动温度曲线沿着路径产生连续交替的加热器和冷却器区域，根据它们各自的扩散率将混合物的组分沿着路径输送。 在一个实施方案中，本发明提供了一种动态热解聚焦器，用于通过使用沿着路径的温度分布的交替的向前和向后运动，基于扩散系数从组分混合物中分离目标化学成分，从而累积最终浓度 目标成分大于其混合物中的初始浓度。

公开(公告)号：US5990604A

公开(公告)日：1999-11-23

申请号：US17361

申请日：1998-02-02

Applicant: Michael W. Geis ,  Jonathan C. Twichell ,  Theodore M. Lyszczarz ,  Nickolay N. Efremow

Inventor： Michael W. Geis ,  Jonathan C. Twichell ,  Theodore M. Lyszczarz ,  Nickolay N. Efremow

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30457

Abstract: Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.

Abstract translation: 改进的场致发射器件基于构成与发射极材料的背接触，使得增加到发射极材料中的电子注入效率。 由接触形态引起的接触或几何场增强附近的发射极材料结构的改变提高了注入效率的提高。 器件能够以高电流密度发射电子，并且能够比以前实现的更低的施加电位差和温度。 没有浅供体的宽带隙发射体材料受益于这种方法。 替代地掺杂有氮的金刚石的发射特性具有良好的发射极/真空带结构但被电子注入的效率所限制，在本发明的上下文中显示出特别的改进。 注入增强触点可以通过将发射极材料与适当的金属化合物组合并进行退火或通过常规的干各向异性蚀刻或离子轰击技术来产生。

公开(公告)号：US5729094A

公开(公告)日：1998-03-17

申请号：US632026

申请日：1996-04-15

Applicant: Michael W. Geis ,  Jonathan C. Twichell ,  Theodore M. Lyszczarz

Inventor： Michael W. Geis ,  Jonathan C. Twichell ,  Theodore M. Lyszczarz

IPC: H01J1/304 ,  H01J19/02

CPC classification number: H01J1/304

Abstract: An energetic-electron emitter providing electrons having kinetic energies on the order of one thousand electron volts without acceleration through vacuum. An average electric field of 10.sup.5 V/m to 10.sup.10 V/m applied across a layer of emissive cathode material accelerates electrons inside the layer. The cathode material is a high-dielectric strength, rigid-structure, wide-bandgap semiconductors, especially type Ib diamond. A light-emitting device incorporates the energetic-electron emitter as a source of excitation to luminescence.

Abstract translation: 能量电子发射体提供具有一千电子伏特的动能的电子，而没有加速通过真空。 施加在发射阴极材料层上的105V / m至1010V / m的平均电场加速层内的电子。 阴极材料是高介电强度，刚性结构的宽带隙半导体，特别是Ib型金刚石。 发光装置将能量 - 电子发射体作为激发源发光。

公开(公告)号：US5728435A

公开(公告)日：1998-03-17

申请号：US445618

申请日：1995-05-22

Applicant: Michael W. Geis ,  John M. Macaulay ,  Jonathan C. Twichell

Inventor： Michael W. Geis ,  John M. Macaulay ,  Jonathan C. Twichell

IPC: H01J1/14 ,  H01J1/304 ,  H05H1/24 ,  B05D5/12

CPC classification number: H01J1/14 ,  H01J1/304 ,  H01J2201/30426 ,  H01J2329/00

Abstract: A cathode structure is formed by a process in which a carbon-containing electron-emissive cathode is subjected to electronegative atoms that include oxygen and/or fluorine. The cathode is also subjected to atoms of electropositive metal, typically after being subjected to the atoms of oxygen and/or fluorine. The combination of the electropositive metal atoms and the electronegative atoms enhances the electron emissivity by reducing the work function.

Abstract translation: 通过其中含碳电子发射阴极经受包括氧和/或氟的电负性原子的方法形成阴极结构。 阴极还经受正电性金属原子，通常在经受氧和/或氟的原子之后。 正电性金属原子和电负性原子的组合通过降低功函数来增强电子发射率。