公开(公告)号：US20070281496A1

公开(公告)日：2007-12-06

申请号：US11754440

申请日：2007-05-29

Applicant: Nitin Ingle ,  Zheng Yuan ,  Paul Gee ,  Kedar Sapre

Inventor： Nitin Ingle ,  Zheng Yuan ,  Paul Gee ,  Kedar Sapre

IPC: H01L21/31

CPC classification number: C23C16/401 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31612

Abstract: Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.

Abstract translation: 描述了在衬底上沉积氧化硅层的方法。 所述方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，以及将原子氧前体引入室中。 所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。 硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。 还描述了在衬底上沉积氧化硅层的系统。

公开(公告)号：US20060148273A1

公开(公告)日：2006-07-06

申请号：US11367866

申请日：2006-03-03

Applicant: Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

Inventor： Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC: H01L21/31 ,  H01L21/469

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

Abstract: Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

公开(公告)号：US20060046427A1

公开(公告)日：2006-03-02

申请号：US11213612

申请日：2005-08-26

Applicant: Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang

Inventor： Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang

IPC: H01L21/76

CPC classification number: H01L21/76837 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224

Abstract: A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.

Abstract translation: 一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。 该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。 该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。 流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

公开(公告)号：US20050255667A1

公开(公告)日：2005-11-17

申请号：US10846734

申请日：2004-05-14

Applicant: Reza Arghavani ,  Zheng Yuan ,  Ellie Yieh ,  Shankar Venkataraman ,  Nitin Ingle

Inventor： Reza Arghavani ,  Zheng Yuan ,  Ellie Yieh ,  Shankar Venkataraman ,  Nitin Ingle

IPC: H01L21/336 ,  H01L21/76 ,  H01L21/8238 ,  H01L29/00 ,  H01L29/78

CPC classification number: H01L29/6656 ,  H01L21/823807 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7846

Abstract: A method of fabricating a semiconductor device, where the method includes forming on a transistor on a substrate, where the transistor includes a channel region configured to conduct charge between a source region and a drain region, forming a trench adjacent to the transistor, depositing a material on the substrate and within the trench, and annealing the material, where the material is tensile following the annealing and creates a tensile stress in the channel region. Also, a method of forming a trench isolation in a semiconductor device, where the method includes forming a trench in a substrate, forming a material within the trench at a lower deposition rate, forming the material on the substrate at a higher deposition rate after the depositing of the material within the trench, and annealing the material, where after the annealing the material in the trench is tensile.

Abstract translation: 一种制造半导体器件的方法，其中所述方法包括在衬底上的晶体管上形成晶体管，其中所述晶体管包括被配置为在源极区域和漏极区域之间导电的沟道区域，形成与所述晶体管相邻的沟槽， 材料在衬底上并在沟槽内，并退火材料，其中材料在退火之后是拉伸的，并且在沟道区域中产生拉伸应力。 另外，在半导体器件中形成沟槽隔离的方法，其中所述方法包括在衬底中形成沟槽，以较低的沉积速率在沟槽内形成材料，在衬底上以更高的沉积速率在衬底上形成材料 在沟槽内沉积材料并退火材料，其中在退火之后，沟槽中的材料是拉伸的。

公开(公告)号：US20050142895A1

公开(公告)日：2005-06-30

申请号：US11018381

申请日：2004-12-20

Applicant: Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang ,  Zheng Yuan

Inventor： Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang ,  Zheng Yuan

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23C16/00 ,  H01L21/31 ,  H01L21/469

CPC classification number: C23C16/45512 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/52

Abstract: A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.

Abstract translation: 一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前体选自TMOS，TEOS，OMTS，OMCTS， 和TOMCATS。 该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。 该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

公开(公告)号：US20050064730A1

公开(公告)日：2005-03-24

申请号：US10979471

申请日：2004-11-01

Applicant: Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

Inventor： Nitin Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/469

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

Abstract: Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a predeposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

Abstract translation: 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。 在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气流稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，导致以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

公开(公告)号：US08759223B2

公开(公告)日：2014-06-24

申请号：US13593412

申请日：2012-08-23

Applicant: Kedar Sapre ,  Jing Tang ,  Ajay Bhatnagar ,  Nitin Ingle ,  Shankar Venkataraman

Inventor： Kedar Sapre ,  Jing Tang ,  Ajay Bhatnagar ,  Nitin Ingle ,  Shankar Venkataraman

IPC: H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31144 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31116

Abstract: A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100° C.

Abstract translation: 蚀刻衬底的方法包括在衬底上形成由氧化硅，氮化硅或氮氧化硅组成的多个双重构图特征。 具有双重图案化特征的基板被提供到处理区域。 包括三氟化氮，氨和氢的蚀刻气体在远程室中通电。 通电的蚀刻气体被引入到工艺区中以蚀刻双重图案化特征以在衬底上形成固体残余物。 固体残余物通过将基底加热至至少约100℃的温度升华。

公开(公告)号：US08741778B2

公开(公告)日：2014-06-03

申请号：US13197487

申请日：2011-08-03

Applicant: Dongqing Yang ,  Jing Tang ,  Nitin Ingle

Inventor： Dongqing Yang ,  Jing Tang ,  Nitin Ingle

IPC: H01L21/302

CPC classification number: H01L21/31116

Abstract: A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.

Abstract translation: 描述了从多个沟槽蚀刻氧化硅的方法，其允许沟槽之间更均匀的蚀刻速率。 蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更平滑。 该方法包括两个干蚀刻阶段，接着是升华步骤。 第一干蚀刻阶段快速去除氧化硅并产生大的固体残渣颗粒。 第二干蚀刻步骤缓慢除去氧化硅，并在大的固体残渣颗粒中产生小的固体残渣颗粒。 在随后的升华步骤中，小和大的固体残余物都被去除。 两个干蚀刻阶段之间没有升华步骤。

公开(公告)号：US08475674B2

公开(公告)日：2013-07-02

申请号：US12839651

申请日：2010-07-20

Applicant: Kiran V. Thadani ,  Jing Tang ,  Nitin Ingle ,  Dongqing Yang

Inventor： Kiran V. Thadani ,  Jing Tang ,  Nitin Ingle ,  Dongqing Yang

IPC: B44C1/22

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.

Abstract translation: 描述了干法蚀刻含硅介电膜的方法。 这些方法包括在蚀刻时保持电介质膜的较高温度，以便在蚀刻表面上实现减少的固体残余物。 部分或完全避免固体残余物的积累增加了蚀刻速率。

公开(公告)号：US20120238103A1

公开(公告)日：2012-09-20

申请号：US13416223

申请日：2012-03-09

Applicant: Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

Inventor： Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32422 ,  H01L21/31122 ,  H01L21/32136

Abstract: A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

Abstract translation: 从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括将含氟气体流入基板处理室的等离子体产生区域，并将能量施加到含氟 气体在等离子体产生区域中产生等离子体。 等离子体包括氟自由基和氟离子。 该方法还包括过滤等离子体以提供具有比氟离子更高浓度​​的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。 该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。 反应气体以比反应气体更高的蚀刻速率蚀刻含金属层蚀刻氧化硅层。