公开(公告)号：US12087743B2

公开(公告)日：2024-09-10

申请号：US17621060

申请日：2020-07-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Dobner ,  Hubert Halbritter

IPC: B60Q3/208 ,  B32B17/10 ,  B60J1/00 ,  B60Q1/24 ,  B60Q1/50 ,  H01L25/075 ,  H01L25/16 ,  H01L23/00 ,  H01L33/62

CPC classification number: H01L25/0753 ,  B32B17/10036 ,  B32B17/10477 ,  B32B17/10504 ,  B32B17/10513 ,  B60J1/001 ,  B60Q1/247 ,  B60Q1/50 ,  B60Q1/5035 ,  B60Q1/507 ,  B60Q1/543 ,  B60Q3/208 ,  H01L25/167 ,  B32B2307/412 ,  B32B2605/006 ,  H01L24/05 ,  H01L24/08 ,  H01L33/62 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2924/0549 ,  H01L2924/12041

Abstract: A light-emitting window element includes a transparent first carrier layer, a transparent second carrier layer, a substrate with a plurality of light-emitting semiconductor chips arranged thereon, and an optical layer having an adjustable transparency. The substrate with the plurality of light-emitting semiconductor chips and the optical layer are arranged between the first and second carrier layers, and the first and second carrier layers, the substrate with the plurality of light-emitting semiconductor chips and the optical layer form a laminate composite.

公开(公告)号：US12074145B2

公开(公告)日：2024-08-27

申请号：US17414234

申请日：2019-12-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Simeon Katz

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L21/6835 ,  H01L33/44 ,  H01L33/62 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: In an embodiment a method includes arranging a first semiconductor wafer above a carrier, wherein the first semiconductor wafer includes a plurality of first semiconductor optoelectronic components, separating a plurality of the first components from the first semiconductor wafer by laser radiation so that the first components fall onto the carrier and attaching the first components separated from the first semiconductor wafer to the carrier, wherein regions of the first semiconductor wafer between adjacent first components are thinned and the first components are covered with a passivation layer before the first components are separated from the first semiconductor wafer.

公开(公告)号：US12066166B2

公开(公告)日：2024-08-20

申请号：US17311862

申请日：2019-12-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Hien ,  Sebastian Stigler

IPC: F21V14/02 ,  F21Y113/13 ,  F21Y115/10 ,  H01L33/00

CPC classification number: F21V14/02 ,  H01L33/005 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L2933/0058

Abstract: In an embodiment an optoelectronic lighting device includes a support and at least one pixel having three illuminating elements, wherein the illuminating elements of the pixel are arranged on an upper side of the support, each illuminating element having a center point, wherein the illuminating elements are arranged around a central point lying on the upper side of the support such that the center points of the illuminating elements lie on a circular path with a defined radius revolving around the central point, wherein each illuminating element includes a base body with a quadrangular base surface, a corner of the base body of each illuminating element lying at least approximately on a line which extends between the center point of the respective illuminating element and the central point, and/or wherein each illuminating element includes a base body with a square base surface, the illuminating elements being arranged on the upper side of the support such that mutually opposite side surfaces of the base body of adjacent illuminating elements extend non-parallel to one another.

公开(公告)号：US12062741B2

公开(公告)日：2024-08-13

申请号：US17292406

申请日：2019-11-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar Tångring ,  Nusret Sena Güldal

IPC: H01L33/50

CPC classification number: H01L33/508 ,  H01L2933/0041 ,  H01L2933/0091

Abstract: A method for producing a conversion element comprising the following steps is described: providing a conversion layer having a matrix, in which phosphor particles are brought in, the phosphor particles comprising a host lattice having activator ions and being concentrated in a enrichment zone, providing a compensation layer having the matrix, in which compensation particles are brought in, which comprise the host lattice and are concentrated in a enrichment zone, and joining the conversion layer and the compensation layer in such a way that the enrichment zone of the conversion layer and the enrichment zone of the compensation layer are arranged symmetrically to one another with respect to a symmetry plane of the conversion element. A conversion element and a component are also specified.

公开(公告)号：US12057676B2

公开(公告)日：2024-08-06

申请号：US17294816

申请日：2019-11-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Andreas Plößl ,  Jörg Erich Sorg ,  Frank Singer

IPC: H01S5/02255 ,  H01S5/02 ,  H01S5/02208 ,  H01S5/02234 ,  H01S5/028 ,  H01S5/40

CPC classification number: H01S5/02208 ,  H01S5/0201 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/02234 ,  H01S5/02255 ,  H01S5/028 ,  H01S5/4031

Abstract: In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.

公开(公告)号：US12034098B2

公开(公告)日：2024-07-09

申请号：US17279632

申请日：2019-09-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Leber ,  Siegfried Herrmann ,  Christine Rafael

IPC: H01L33/36 ,  H01L33/38 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: An optoelectronic device includes an optoelectronic semiconductor chip having a first and a second semiconductor layer having a first and second conductivity type, respectively; a first and a second current spreading layer; a dielectric reflective layer; and a plurality of first electrical connecting elements. The first semiconductor layer and the second semiconductor layer are stacked. The first current spreading layer and the second current spreading layer are arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The dielectric reflective layer is arranged between the first semiconductor layer and the first current spreading layer. The plurality of first electrical connecting elements extends through the dielectric reflective layer and is suitable to electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer is electrically connected to the second semiconductor layer.

公开(公告)号：US12014941B2

公开(公告)日：2024-06-18

申请号：US17284280

申请日：2019-10-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Simeon Katz ,  Andreas Weimar

IPC: H01L21/67 ,  B65G47/90 ,  H01L21/683 ,  H01L23/00

CPC classification number: H01L21/67132 ,  B65G47/90 ,  H01L21/67144 ,  H01L21/6833 ,  H01L21/6835 ,  H01L24/97 ,  H01L24/98

Abstract: In an embodiment, an adhesive stamp includes a plurality of variable-length stamp bodies arranged in an array, wherein each stamp body has an adhesive surface on a head portion of the stamp body, the adhesive surface configured to hold a semiconductor chip, wherein a first electrode is arranged in the head portion, wherein the first electrode is chargeable and whose polarity is changeable, wherein a second electrode is arranged in a foot portion of the stamp body, wherein the second electrode is chargeable and whose polarity is changeable, wherein a length of the stamp body is variable depending on charges applied to the first electrode and the second electrode, and wherein the adhesive stamp is configured to transfer semiconductor chips.

公开(公告)号：US12001098B2

公开(公告)日：2024-06-04

申请号：US17641368

申请日：2020-11-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ulrich Streppel

IPC: G02F1/00 ,  G02F1/1335 ,  G02F1/13357

CPC classification number: G02F1/133605 ,  G02F1/133603 ,  G02F1/133607

Abstract: The present invention relates to an LED backlighting system comprising a substrate, an optoelectronic semiconductor chip assembly, a reflector and a diffuser element. The optoelectronic semiconductor chip assembly is disposed on an upper side of the substrate. The reflector has a through-hole that extends between a lower opening on an underside of the reflector and an upper opening on an upper side of the reflector. The reflector is disposed on the upper side of the substrate so that the underside of the reflector is facing the upper side of the substrate. The optoelectronic semiconductor chip assembly is disposed in the through-hole of the reflector. The diffuser element has an upper side and an underside. The diffuser element is disposed above the upper side of the reflector so that the underside of the diffuser element is facing the upper side of the reflector.

公开(公告)号：US11955588B2

公开(公告)日：2024-04-09

申请号：US17298879

申请日：2019-11-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Kerstin Neveling ,  Heribert Zull

IPC: H01L33/62 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L33/005 ,  H01L2933/0066

Abstract: In one embodiment, the optoelectronic semiconductor device comprises a semiconductor layer sequence and an electrical via. The semiconductor layer sequence includes an active zone for generating radiation and a contact layer for electrical contacting. The active zone lies in a plane perpendicular to a main growth direction of the semiconductor layer sequence and is located between a first semiconductor region and a second semiconductor region. The contact layer is located within the second semiconductor region. The via extends through the contact layer and preferably ends within the second semiconductor region. A contact surface between the via and the contact layer encloses a contact angle of at least 20° and at most 60° with respect to the plane.

公开(公告)号：US11942756B2

公开(公告)日：2024-03-26

申请号：US17421195

申请日：2020-01-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bruno Jentzsch ,  Alexander Tonkikh

IPC: H01S5/02255 ,  H01L33/00 ,  H01L33/44 ,  H01L33/46 ,  H01S5/028 ,  H01S5/40

CPC classification number: H01S5/02255 ,  H01L33/0045 ,  H01L33/0093 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0287 ,  H01S5/4012 ,  H01S5/4056 ,  H01L2933/0025

Abstract: The invention relates to a radiation-emitting semiconductor chip comprising a semiconductor layer sequence having at least two active regions which generate electromagnetic radiation during operation and at least one reflective outer surface which is arranged to the side of each active region wherein the reflective outer surface includes an angle of at least 35° and at most 55° with a main extension plane of the semiconductor chip. The invention also relates to a method for producing a radiation-emitting semiconductor chip.