公开(公告)号：US20060250351A1

公开(公告)日：2006-11-09

申请号：US10947621

申请日：2004-09-21

Applicant: Peng Fu

Inventor： Peng Fu

IPC: G09G5/00

CPC classification number: A63F13/22 ,  A63F13/06 ,  A63F13/235 ,  A63F13/24 ,  A63F13/28 ,  A63F13/42 ,  A63F2300/1018 ,  A63F2300/1037 ,  A63F2300/1043 ,  G06F3/038 ,  G06F3/04847

Abstract: Embodiments of the inventions include a gamepad that supports an internal mapping system. A user may remap functions associated with any input mechanism of the gamepad to any other input mechanism. The gamepad may include extra, non-standard, input mechanisms. Mapping may be stored internal to the gamepad.

Abstract translation: 本发明的实施例包括支持内部映射系统的游戏手柄。 用户可以将与游戏手柄的任何输入机构相关联的功能重新映射到任何其它输入机构。 游戏手柄可能包括额外的非标准输入机制。 映射可以存储在游戏手柄的内部。

公开(公告)号：US20060154478A1

公开(公告)日：2006-07-13

申请号：US11035325

申请日：2005-01-12

Applicant: Ju-Wang Hsu ,  Jyu-Horng Shieh ,  Yi-Nien Su ,  Peng-Fu Hsu ,  Hun-Jan Tao

Inventor： Ju-Wang Hsu ,  Jyu-Horng Shieh ,  Yi-Nien Su ,  Peng-Fu Hsu ,  Hun-Jan Tao

IPC: H01L21/4763

CPC classification number: H01L21/76802 ,  H01L21/76835

Abstract: Methods and structures for forming a contact hole structure are disclosed. These methods first form a substantially silicon-free material layer over a substrate. A material layer is formed over the substantially silicon-free material layer. A contact hole is formed within the substantially silicon-free material layer and the material layer without substantially damaging the substrate. In addition, a conductive layer is formed in the contact hole so as to form a contact structure.

Abstract translation: 公开了形成接触孔结构的方法和结构。 这些方法首先在衬底上形成基本上无硅的材料层。 在基本无硅材料层上形成材料层。 在基本无硅的材料层和材料层内形成接触孔，而基本上不损坏衬底。 此外，在接触孔中形成导电层以形成接触结构。

公开(公告)号：US20060054597A1

公开(公告)日：2006-03-16

申请号：US11230349

申请日：2005-09-20

Applicant: Baw-Ching Perng ,  Fang-Cheng Chen ,  Hun-Jan Tao ,  Peng-Fu Hsu ,  Yue-Ho Hsieh ,  Chih-Cheng Wang ,  Shih-Yi Hsiao

Inventor： Baw-Ching Perng ,  Fang-Cheng Chen ,  Hun-Jan Tao ,  Peng-Fu Hsu ,  Yue-Ho Hsieh ,  Chih-Cheng Wang ,  Shih-Yi Hsiao

IPC: C09K13/00 ,  H01L21/302 ,  B44C1/22 ,  C25F3/00

CPC classification number: H01L21/31111

Abstract: A wet etchant solution composition and method for etching oxides of hafnium and zirconium including at least one solvent present at greater than about 50 weight percent with respect to an arbitrary volume of the wet etchant solution; at least one chelating agent present at about 0.1 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution; and, at least one halogen containing acid present from about 0.0001 weight percent to about 10 weight percent with respect to an arbitrary volume of the wet etchant solution.

Abstract translation: 用于蚀刻铪和锆的氧化物的湿蚀刻剂溶液组合物和方法，其包括相对于任意体积的湿蚀刻剂溶液以大于约50重量％存在的至少一种溶剂; 相对于任意体积的湿蚀刻溶液，至少一种螯合剂以约0.1重量％至约10重量％存在; 并且相对于任意体积的湿蚀刻剂溶液，至少一种含卤素的酸的存在量为约0.0001重量％至约10重量％。

公开(公告)号：US20050164479A1

公开(公告)日：2005-07-28

申请号：US10766596

申请日：2004-01-27

Applicant: Baw-Ching Perng ,  Yuan-Hung Chiu ,  Mei-Hui Sung ,  Peng-Fu Hsu

Inventor： Baw-Ching Perng ,  Yuan-Hung Chiu ,  Mei-Hui Sung ,  Peng-Fu Hsu

IPC: H01L21/20 ,  H01L21/28 ,  H01L21/311 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/8242 ,  H01L29/51

CPC classification number: H01L21/3065 ,  H01L21/28194 ,  H01L21/31122 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66583

Abstract: A method is described for selectively etching a high k dielectric layer that is preferably a hafnium or zirconium oxide, silicate, nitride, or oxynitride with a selectivity of greater than 2:1 relative to silicon oxide, polysilicon, or silicon. The plasma etch chemistry is comprised of one or more halogen containing gases such as CF4, CHF3, CH2F2, CH3F, C4F8, C4F6, C5F6, BCl3, Br2, HF, HCl, HBr, HI, and NF3 and leaves no etch residues. An inert gas or an inert gas and oxidant gas may be added to the halogen containing gas. In one embodiment, a high k gate dielectric layer is removed on portions of an active area in a MOS transistor. Alternatively, the high k dielectric layer is used in a capacitor between two conducting layers and is selectively removed from portions of an ILD layer.

Abstract translation: 描述了一种相对于氧化硅，多晶硅或硅选择性地蚀刻优选为铪或氧化锆，硅酸盐，氮化物或氮氧化物的高k电介质层的方法，其选择性大于2:1。 等离子体蚀刻化学性质由一种或多种含卤素气体组成，例如CF 4，CH 3 3，CH 2 F 2， CH 3，CH 3，CH 3，CH 3，CH 3，CH 3，CH 3， C 5，C 5，F 5，BCl 3，Br 2，HF，HCl，HBr，HI， 和NF 3，并且不留下蚀刻残留物。 可以向含卤素的气体中加入惰性气体或惰性气体和氧化剂气体。 在一个实施例中，在MOS晶体管的有源区域的部分上去除高k栅极电介质层。 或者，高k电介质层用于两个导电层之间的电容器中，并且从ILD层的部分选择性地去除。

公开(公告)号：US20050010000A1

公开(公告)日：2005-01-13

申请号：US10615628

申请日：2003-07-09

Applicant: Peng-Fu Hsu ,  Jyu-Horng Shieh ,  Yung-Cheng Lu ,  Hun-Jan Tao ,  Yuan-Hung Chiu

Inventor： Peng-Fu Hsu ,  Jyu-Horng Shieh ,  Yung-Cheng Lu ,  Hun-Jan Tao ,  Yuan-Hung Chiu

IPC: C08G77/00 ,  C08G77/38 ,  H01L21/768

CPC classification number: C08G77/38

Abstract: Low-k organosilicate dielectric material can be exposed to a series of reagents, including a halogenation reagent, an alkylation reagent, and a termination reagent, in order to reverse degradation of dielectric properties caused by previous processing steps.

Abstract translation: 低k有机硅酸盐电介质材料可以暴露于一系列试剂，包括卤化试剂，烷基化试剂和终止试剂，以反转由以前的处理步骤引起的介电性质的退化。

公开(公告)号：US06706640B1

公开(公告)日：2004-03-16

申请号：US10292355

申请日：2002-11-12

Applicant: Ming-Huan Tsai ,  Ju-Wang Hsu ,  Peng-Fu Hsu ,  Hun-Jan Tao

Inventor： Ming-Huan Tsai ,  Ju-Wang Hsu ,  Peng-Fu Hsu ,  Hun-Jan Tao

IPC: H01L21302

CPC classification number: H01L21/28518 ,  H01L21/31116 ,  H01L21/76802

Abstract: A plasma etch method for etching a dielectric layer and an etch stop layer to reach a metal silicide layer formed thereunder employs for etching the etch stop layer an etchant gas composition comprising a fluorine containing gas and a nitrogen containing gas, preferably with a carrier gas such as argon or helium, but without an oxygen containing gas or a carbon and oxygen containing gas. The plasma etch method is selective for the etch stop layer with respect to the metal silicide layer, thus maintaining the physical and electrical integrity of the metal silicide layer.

Abstract translation: 用于蚀刻介电层和蚀刻停止层以达到其下形成的金属硅化物层的等离子体蚀刻方法用于蚀刻蚀刻停止层包括含氟气体和含氮气体的蚀刻剂气体组合物，优选地使用载气如 作为氩或氦，但不含含氧气体或含碳和氧的气体。 等离子体蚀刻方法对于蚀刻停止层相对于金属硅化物层是选择性的，从而保持金属硅化物层的物理和电气完整性。

公开(公告)号：US06369256B1

公开(公告)日：2002-04-09

申请号：US09589757

申请日：2000-06-09

Applicant: Yun Chi ,  Peng-Fu Hsu ,  Tsung-Wu Lin ,  Chao-Shiuan Liu ,  Arthur J. Carty

Inventor： Yun Chi ,  Peng-Fu Hsu ,  Tsung-Wu Lin ,  Chao-Shiuan Liu ,  Arthur J. Carty

IPC: C07F108

CPC classification number: C23C16/18 ,  C07C215/08 ,  C07C217/08

Abstract: Volatile low melting solid Cu(II) metal complexes are provided which are capable of depositing a copper film on various substrates under CVD conditions in the absence of reducing carrier gas H2. These CU(II) metal complexes are represented by the structure formula: Cu(OCCF3R1CH2NHR2)2 wherein R1 is selected from hydrogen, C1-C4 lower-alkyl or perfluorinated C1-C4 lower-alkyl groups, e.g., CH3, and CF3, etc., and wherein R2 is C1-C6 lower-alkyl or C1-C6 lower-alkene, which may be substituted by one or more fluorine atoms, by a C1-C6 lower-alkoxy group or by a C1-C6 di-lower-alkyl amino group, provided that when R1 is CF3, R2 is other than hydrogen or methyl. A process for depositing copper film using these Cu(II) metal complexes is also provided.

Abstract translation: 提供挥发性低熔点固体Cu（II）金属络合物，其能够在不存在还原载气H2的CVD条件下在各种基材上沉积铜膜。 这些CU（II）金属络合物由结构式表示：其中R1选自氢，C1-C4低级烷基或全氟化C1-C4低级烷基，例如CH3和CF3等，其中R2 是可被C1-C6低级烷氧基或C1-C6二低级烷基氨基取代的可被一个或多个氟原子取代的C 1 -C 6低级烷基或C 1 -C 6低级烯 当R1是CF3时，R2不是氢或甲基。 还提供了使用这些Cu（II）金属络合物沉积铜膜的方法。

公开(公告)号：US09337153B2

公开(公告)日：2016-05-10

申请号：US14008457

申请日：2011-12-16

Applicant: Peng Fu ,  Shan Luo ,  Zhong Lu ,  Kaiyou Qian ,  Chin Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Ye Bai

Inventor： Peng Fu ,  Shan Luo ,  Zhong Lu ,  Kaiyou Qian ,  Chin Tien Chiu ,  Cheeman Yu ,  Hem Takiar ,  Ye Bai

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/433 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L23/552 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2223/5442 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/1434 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A memory device including a metallic layer shielding electromagnetic radiation and/or dissipating heat, and a method of making the memory device, are disclosed. The metallic layer is formed on a metallic layer transfer assembly. The metallic layer transfer assembly and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the metallic layer is transferred from the shield to the encapsulated memory device.

Abstract translation: 公开了一种包括屏蔽电磁辐射和/或耗散热的金属层的存储器件，以及制造存储器件的方法。 金属层形成在金属层转移组件上。 将金属层转移组件和未封装的存储器件放置在模具中并封装。 在模塑料的包封和固化期间，金属层从屏蔽转移到封装的存储器件。

公开(公告)号：US20120146247A1

公开(公告)日：2012-06-14

申请号：US13265666

申请日：2011-06-08

Applicant: Itzhak Pomerantz ,  Shiv Kumar ,  Robert Miller ,  Chin-Tien Chiu ,  Peng Fu ,  Cheeman Yu ,  Hem Takiar ,  Chih Chiang Tung ,  Kaiyou Qian ,  Rahav Yairi

Inventor： Itzhak Pomerantz ,  Shiv Kumar ,  Robert Miller ,  Chin-Tien Chiu ,  Peng Fu ,  Cheeman Yu ,  Hem Takiar ,  Chih Chiang Tung ,  Kaiyou Qian ,  Rahav Yairi

IPC: H01L23/28

CPC classification number: G06K19/07732 ,  H01L2924/0002 ,  H05K5/0278 ,  H01L2924/00

Abstract: A memory device is disclosed including at least one surface pre-treated to roughen the surface for better adhesion of a curable fluid such as glue or ink on the surface. The surface of the memory device may be pre-treated by scoring lines in the surface with a laser or by forming discrete deformations with a particle blaster. The surface may also be roughened by providing a roughened pattern on a mold plate during an encapsulation process. In further examples, the surface may be chemically pre-treated to roughen the surface and/or increase the adhesion energy of the surface.

Abstract translation: 公开了一种记录装置，其包括至少一个经过预处理的表面以粗糙化表面，以便在表面上更好地粘附可固化流体例如胶水或油墨。 存储器件的表面可以通过用激光在表面上刻划线或者通过用粒子喷射器形成离散的变形来预处理。 在封装过程中，通过在模板上提供粗糙图案也可以使表面粗糙化。 在另外的实施例中，表面可以被化学预处理以使表面粗糙化和/或增加表面的粘附能。

公开(公告)号：US07732878B2

公开(公告)日：2010-06-08

申请号：US11583634

申请日：2006-10-18

Applicant: Liang-Gi Yao ,  Shiang-Bau Wang ,  Huan-Just Lin ,  Peng-Fu Hsu ,  Jin Ying ,  Hun-Jan Tao

Inventor： Liang-Gi Yao ,  Shiang-Bau Wang ,  Huan-Just Lin ,  Peng-Fu Hsu ,  Jin Ying ,  Hun-Jan Tao

IPC: H01L29/78

CPC classification number: H01L21/823835 ,  H01L21/823807 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

Abstract: A semiconductor structure includes a substrate, a gate stack on the substrate, a source/drain region adjacent the gate stack, a source/drain silicide region on the source/drain region, a protection layer on the source/drain silicide region, wherein a region over the gate stack is substantially free from the protection layer, and a contact etch stop layer (CESL) having a stress over the protection layer and extending over the gate stack.

Abstract translation: 半导体结构包括衬底，衬底上的栅极堆叠，与栅极堆叠相邻的源极/漏极区域，源极/漏极区域上的源极/漏极硅化物区域，源极/漏极硅化物区域上的保护层，其中 栅极叠层上的区域基本上没有保护层，以及在保护层上方并且在栅极堆叠上延伸的接触蚀刻停止层（CESL）。