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公开(公告)号：US20150338279A1
公开(公告)日：2015-11-26
申请号：US14725133
申请日：2015-05-29
发明人： Gurary Tas , Jing Zhou , Daewon Kwon
IPC分类号： G01J5/06 , C23C16/48 , C23C16/458 , C23C16/18
CPC分类号： G01J5/06 , C23C16/18 , C23C16/4582 , C23C16/46 , C23C16/481 , C23C16/52 , Y10T29/49826
摘要： An apparatus and method for controlling stray radiation within a CVD chamber. A heater array disposed beneath a wafer carrier for radiatively heating of the wafer carrier includes a peripheral or outermost heating element or elements. Scattered radiation originating from a designated segment of the peripheral heating element(s) can be reduced locally by one of several mechanisms, including reducing the emission (e.g., operating temperature) of the designated segment, or capturing or deflecting a portion of the radiation originating from the designated segment. In one embodiment, an electrical connector on a resistance heating element provides the reduced emission from the designated segment. It has been found that radiation thermometers fixed proximate an axis that extends from the center of the wafer carrier and across the designated segment is subject to less stray radiation, thus providing a more reliable temperature reading in the optical wavelengths.
摘要翻译： 一种用于控制CVD室内杂散辐射的装置和方法。 设置在晶片载体下面用于辐射加热晶片载体的加热器阵列包括外围或最外面的加热元件。 来自外围加热元件的指定片段的散射辐射可以通过几种机制之一来局部地减少，包括减少指定片段的发射（例如，操作温度），或者捕获或偏转源的一部分辐射 从指定的段。 在一个实施例中，电阻加热元件上的电连接器提供来自指定段的减少的发射。 已经发现，靠近从晶片载体的中心延伸并跨越指定的区段的轴固定的辐射温度计经受更少的杂散辐射，从而在光波长中提供更可靠的温度读数。
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公开(公告)号：US20150069420A1
公开(公告)日：2015-03-12
申请号：US14480175
申请日：2014-09-08
发明人： Ajit Paranjpe , Jia Lee , Craig Metzner
CPC分类号： H01L33/0079 , H01L33/22
摘要： A stressor layer is applied to a semiconducting stack in order to separate the semiconducting stack at a predetermined depth. Tensile force is applied to the stressor layer, fracturing the semiconducting stack at the predetermined depth and allowing the resulting upper portion of the semiconducting stack to be used in manufacturing a semiconducting end-product (e.g., a light-emitting diode). The resulting lower portion of the semiconducting stack may be reused to grow a new semiconducting stack thereon.
摘要翻译： 将应力层施加到半导体叠层，以便以预定深度分离半导体叠层。 将拉伸力施加到应力层上，在预定深度压裂半导体叠层，并允许半导体叠层的所得上部用于制造半导体最终产品（例如，发光二极管）。 所产生的半导体堆叠的下部可以重新用于在其上生长新的半导体叠层。
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公开(公告)号：US20150056790A1
公开(公告)日：2015-02-26
申请号：US14533650
申请日：2014-11-05
IPC分类号： H01L21/02
CPC分类号： H01L21/02538 , C23C16/301 , C23C16/45504 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C23C16/45587 , C23C16/458 , C23C16/4584 , C23C16/46 , H01L21/0262
摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-350° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.
摘要翻译： 化学气相沉积反应器及方法。 将反应性气体，例如包括III族金属源和V族金属源的气体引入旋转盘式反应器的室（10）中并且向下引导到晶片载体（32）和基板（40） 保持在升高的基板温度，通常高于约400℃，通常为约700-1100℃，以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃的入口温度下引入反应器中，最优选的是约100℃-350℃。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。
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24.发明申请WAFER CARRIER HAVING PROVISIONS FOR IMPROVING HEATING UNIFORMITY IN CHEMICAL VAPOR DEPOSITION SYSTEMS 审中-公开具有提高化学蒸气沉积系统加热均匀性的滚动承载器公开(公告)号：US20140261187A1
公开(公告)日：2014-09-18
申请号：US13840164
申请日：2013-03-15
发明人： Sandeep Krishnan , Wiliam E. Quinn , Jeffery S. Montgomery , Joshua Mangum , Lukas Urban , Alexander Gurary
CPC分类号： C30B25/12 , B23P19/04 , C23C16/4584 , C23C16/4585 , H01L21/68728 , H01L21/68735 , H01L21/68764 , H01L21/68771 , Y10T29/49826
摘要： A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.
摘要翻译： 一种晶片载体及其制造方法，用于通过化学气相沉积在一个或多个晶片上生长外延层的系统中。 晶片载体包括凹入其体内的晶片保留孔。 隔热隔离物至少部分地位于至少一个晶片保持袋中，并且被布置成保持周壁表面和晶片之间的间隔，该隔离物由导热率小于热导率的材料构成 晶片载体使得间隔物限制从晶片载体的部分到晶片的热传导。 晶片载体还包括间隔件保持部件，其与间隔件接合并且包括定向成防止间隔件围绕中心轴旋转时的离心运动的表面。
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公开(公告)号：US20140190405A1
公开(公告)日：2014-07-10
申请号：US13736439
申请日：2013-01-08
IPC分类号： B05C11/00
CPC分类号： C23C16/4407 , C23C16/4409 , C23C16/4585
摘要： A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor can include a reaction chamber having an interior and an entry port for insertion and removal of substrates, a gas inlet manifold communicating with the interior of the chamber for admitting process gasses to form a deposit on substrates held within the interior, a shutter mounted to the chamber, and one or more cleaning elements mounted within the chamber. The shutter can be movable between (i) a run position in which the cleaning elements are remote from the exhaust channel and (ii) a cleaning position in which the one or more cleaning elements engage with the shutter so that the cleaning elements remove deposited particles from the shutter upon movement of the shutter to the cleaning position.
摘要翻译： 提供化学气相沉积反应器和晶片处理方法。 反应器可以包括具有内部和用于插入和移除基板的入口的反应室，与室的内部连通的气体入口歧管，用于允许工艺气体以在保持在内部的基板上形成沉积物，快门安装 并且安装在腔室内的一个或多个清洁元件。 快门可以在（i）清洁元件远离排气通道的行进位置和（ii）清洁位置之间移动，其中一个或多个清洁元件与快门接合，使得清洁元件去除沉积的颗粒 从快门移动到快门到清洁位置。
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公开(公告)号：US20130343426A1
公开(公告)日：2013-12-26
申请号：US13801357
申请日：2013-03-13
发明人： Alexander I. Gurary , Mikhail Belousov , Guray Tas
IPC分类号： G01J5/02
CPC分类号： G01J5/0007 , G01J5/02 , G01J5/602
摘要： A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.
摘要翻译： 对于诸如化学气相沉积反应器的晶片处理反应器的现场温度测量的方法理想地包括加热反应器直到反应器达到晶片处理温度并且使旋转轴线内的晶片支撑元件旋转在反应器内的步骤。 该方法理想地还包括当晶片支撑元件围绕旋转轴线旋转时，使用接收来自晶片支撑元件的第一部分的辐射的第一操作高温计获得第一操作温度测量值，并且使用晶片获得第一晶片温度测量值 温度测量装置，其接收来自至少一个晶片的辐射，所述晶片温度测量装置位于第一位置。
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27.发明申请公开(公告)号：US20130206583A1
公开(公告)日：2013-08-15
申请号：US13802828
申请日：2013-03-14
发明人： Boris L. Druz , Viktor Kanarov , Hariharakeshave S. Hegde , Alan V. Hayes , Emmanuel Lakios , Mario Roque
CPC分类号： C23C14/505 , C23C14/044 , C23C14/221 , C23C14/225 , C23C14/46 , C23C14/542 , H01J37/08 , H01J37/20 , H01J37/3053 , H01J37/3178 , H01J2237/20207 , H01J2237/20214 , H01J2237/20221
摘要： Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.
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公开(公告)号：US20040163766A1
公开(公告)日：2004-08-26
申请号：US10772132
申请日：2004-02-04
发明人： Viktor Kanarov , Alan V. Hayes , Rustam Yevtukhov , Ira Reiss , Roger P. Fremgen JR. , Adrian Celaru , Kurt E. Williams , Carlos Fernando de Mello Borges , Boris L. Druz , Renga Rajan , Hari Hegde
IPC分类号： C23F001/00
CPC分类号： H01L21/67253 , H01J27/18 , H01J37/321 , H01J37/32458 , H01L21/67069
摘要： A charged particle source utilizes a novel plasma processing chamber, RF coil and ion optics, to achieve high uniformity. The plasma processing chamber has a re-entrant vessel which is movable, and which includes extensions of adjustable shape or position, to make more uniform the plasma contained within the chamber. One or more magnets, which may be static or moving, may be included within the re-entrant vessel. The ion optics include a grid with a number of apertures, and tuning features each surrounding an aperture. These tuning features either reduce the diameter of the associated aperture, or increase the length of that aperture, to create more uniform beamlets emerging from the grid. The RF coil includes a flux concentrator positioned adjacent to the winding in at least one angular region thereof to tune the magnetic field produced thereby.
摘要翻译： 带电粒子源利用新颖的等离子体处理室，RF线圈和离子光学器件，以实现高均匀性。 等离子体处理室具有可移动的并且包括可调节形状或位置的延伸部的入口容器，以使包含在室内的等离子体更均匀。 一个或多个可以是静态或移动的磁体可以包括在重入容器内。 离子光学器件包括具有多个孔的栅格，以及每个围绕孔的调谐特征。 这些调谐功能可以减小相关孔径的直径，或增加该孔径的长度，从而形成从网格出现的更均匀的子束。 RF线圈包括在其至少一个角度区域中邻近绕组定位的磁通集中器，以调谐由此产生的磁场。
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公开(公告)号：US20240142310A1
公开(公告)日：2024-05-02
申请号：US18489460
申请日：2023-10-18
发明人： Ji-Dih HU
IPC分类号： G01J5/0821
CPC分类号： G01J5/0821
摘要： A substrate processing system in accordance with one embodiment includes a processing chamber and an optical pyrometer assembly to measure an emitted thermal radiation originating substantially from a portion of target surfaces. The optical pyrometer includes a lightpipe that comprises a core and a hollow sheath surrounding the core. The core and the sheath are concentric with one another. The sheath is formed by a chemical vapor deposition process and includes local protrusions within a hollow interior thereof to maintain a position of the core within the sheath. In particular, the local protrusions are formed so as to center at least a distal end portion of the core within the sheath. A temperature of the target surface is determined from an intensity of a portion of the emitted thermal radiation near at least one wavelength.
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公开(公告)号：US11756805B2
公开(公告)日：2023-09-12
申请号：US17117762
申请日：2020-12-10
发明人： John Taddei , Kenji Nulman , Jonathan Fijal , Phillip Tyler , Ian Rafter
CPC分类号： H01L21/67051 , B08B3/024 , B08B3/04 , B23K1/206 , B08B5/02 , H01L21/02334 , H01L21/67057
摘要： A system for removing flux from openings formed in a substrate that has openings (e.g., sized 20 microns or less) formed therein includes a spay nozzle device that has a spray nozzle arm that is formed at an angle of about 45 degrees or less for discharging fluid towards the openings in the substrate for flux removal. The angle is between about 30 degrees and 45 degrees.
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