Abstract:
An illumination subsystem configured to provide illumination for a measurement system includes first and second light sources configured to generate light for measurements in different wavelength regimes. The illumination subsystem also includes a TIR prism configured to be moved into and out of an optical path from the first and second light sources to the measurement system. If the TIR prism is positioned out of the optical path, light from only the first light source is directed along the optical path. If the TIR prism is positioned in the optical path, light from only the second light source is directed along the optical path. Various measurement systems are also provided. One measurement system includes an optical subsystem configured to perform measurements of a specimen using light in different wavelength regimes directed along a common optical path. The different wavelength regimes include vacuum ultraviolet, ultraviolet, visible, and near infrared wavelength regimes.
Abstract:
Systems and methods are disclosed for using ellipsometer configurations to measure the partial Mueller matrix and the complete Jones matrix of a system that may be isotropic or anisotropic. In one embodiment two or more signals, which do not necessarily satisfy any symmetry assumptions individually, are combined into a composite signal which satisfies a symmetry assumption. The individual signals are collected at two or more analyzer angles. Symmetry properties of the composite signals allow easy extraction of overlay information for any relative orientation of the incident light beam with respect to a ID grating target, as well as for targets comprising general 2D gratings. Signals of a certain symmetry property also allow measurement of profile asymmetry in a very efficient manner. In another embodiment a measurement methodology is defined to measure only signals which satisfy a symmetry assumption. An optional embodiment comprises a single polarization element serving as polarizer and analyzer. Another optional embodiment uses an analyzing prism to simultaneously collect two polarization components of reflected light.
Abstract:
A process for measuring both the reflectance and sheet resistance of a thin film, such as a metal film or a doped semiconductor, in a common apparatus comprises: directing a beam of radiation from a radiation source on the common apparatus onto a portion of the surface of the thin film, sensing the amount of radiation reflected from the surface of the thin film, and contacting the surface of the thin film with a sheet resistance measurement apparatus on the apparatus at a portion of the surface of the thin film coincident with or adjacent to the portion of the thin film contacted by the radiation beam to measure the sheet resistance of the thin film. The sheet resistance measurement apparatus may, by way of example, comprise a 4 point probe or an eddy current measurement apparatus. The respective measurements may be carried out either simultaneously or sequentially. By deriving the resistivity of the thin film from the measured reflectance at any particular region of the thin film surface, the thickness of the thin film, at that region of the film, may be obtained by dividing the derived resistivity by the measured sheet resistance for that same region.
Abstract:
Method and apparatus for accurately and instantaneously determining the thermodynamic temperature of remote objects by continuous determination of the emissivity, the reflectivity, and optical constants, as well as the apparent or brightness temperature of the sample with a single instrument. The emissivity measurement is preferably made by a complex polarimeter including a laser that generates polarized light, which is reflected from the sample into a detector system. The detector system includes a beamsplitter, polarization analyzers, and four detectors to measure independently the four Stokes vectors of the reflected radiation. The same detectors, or a separate detector in the same instrument, is used to measure brightness temperature. Thus, the instrument is capable of measuring both the change in polarization upon reflection as well as the degree of depolarization and hence diffuseness. This enables correction for surface roughness of the sample and background radiation, which could otherwise introduce errors in temperature measurement.
Abstract:
A solar thermochemical processing system is disclosed. The system includes a first unit operation for receiving concentrated solar energy. Heat from the solar energy is used to drive the first unit operation. The first unit operation also receives a first set of reactants and produces a first set of products. A second unit operation receives the first set of products from the first unit operation and produces a second set of products. A third unit operation receives heat from the second unit operation to produce a portion of the first set of reactants.
Abstract:
An apparatus 100 comprising a first substrate 130 having a first surface 125, a second substrate 132 having a second surface 127 facing the first surface and an array 170 of metallic raised features 170 being located on the first surface, each raised feature being in contact with the first surface to the second surface, a portion of the raised features being deformed via a compressive force 305.
Abstract:
A method that incorporates teachings of the subject disclosure may include, for example, utilizing a system including at least one processor for determining a video modification plan for a received video stream of a video call session according to the at least one party associated with the video call session, modifying, by the system, a plurality of background images of the received video stream according to the video modification plan to generate a plurality of modified background images, and generating, by the system, a modified video stream according to the plurality of modified background images. Other embodiments are disclosed.
Abstract:
A Mueller ellipsometer of the type having a first rotating element on an incident beam side of a sample and a second rotating element on a reflected beam side of the sample and a detector having an integration time, having a controller for selectively and separately adjusting (1) a first angular frequency of the first rotating element and (2) a second angular frequency of the second rotating element.
Abstract:
A Mueller ellipsometer of the type having a first rotating element on an incident beam side of a sample and a second rotating element on a reflected beam side of the sample and a detector having an integration time, having a controller for selectively and separately adjusting (1) a first angular frequency of the first rotating element and (2) a second angular frequency of the second rotating element.
Abstract:
An apparatus includes a thermoelectric cooler adjacent to a surface of a device substrate and including a first set of one or more metal electrodes, a second set of one or more metal electrodes, and one or more semiconductor members. Each member includes a material different from the device substrate and physically joins a corresponding one electrode of the first set to a corresponding one electrode of the second set. The electrodes and at least one member are configured to transport heat to or from a thermal load in a direction parallel to the surface of the device substrate.