公开(公告)号：US20170207088A1

公开(公告)日：2017-07-20

申请号：US15398591

申请日：2017-01-04

Applicant: Applied Materials, Inc.

Inventor： Thomas Jongwan KWON ,  Rui CHENG ,  Abhijit Basu MALLICK ,  Er-Xuan PING ,  Jaesoo AHN

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  H01L21/02109 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/11582 ,  H01L28/00

Abstract: Implementations of the present disclosure relate to improved hardmask materials and methods for patterning and etching of substrates. A plurality of hardmasks may be utilized in combination with patterning and etching processes to enable advanced device architectures. In one implementation, a first hardmask and a second hardmask disposed on a substrate having various material layers disposed thereon. The second hardmask may be utilized to pattern the first hardmask during a first etching process. A third hardmask may be deposited over the first and second hardmasks and a second etching process may be utilized to form channels in the material layers.

公开(公告)号：US20170178956A1

公开(公告)日：2017-06-22

申请号：US15384219

申请日：2016-12-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Jin Hee PARK ,  Tae Hong HA ,  Sang-Hyeob LEE ,  Thomas Jongwan KWON ,  Jaesoo AHN ,  Xianmin TANG ,  Er-Xuan PING ,  Sree KESAPRAGADA

IPC: H01L21/768 ,  C23C16/458 ,  C23C16/48 ,  C23C16/455 ,  H01L21/285 ,  H01L21/67

CPC classification number: H01L21/76879 ,  C23C16/045 ,  C23C16/16 ,  C23C16/18 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/481 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53209 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.

公开(公告)号：US20170018706A1

公开(公告)日：2017-01-19

申请号：US15199006

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： Lin XUE ,  Jaesoo AHN ,  Mahendra PAKALA ,  Chi Hong CHING ,  Rongjun WANG

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01F10/14 ,  H01F10/3222 ,  H01L43/08 ,  H01L43/10

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for spin-transfer-torque magnetoresistive random access memory (STT-MRAM) applications. In one embodiment, the method includes patterning a film stack having a tunneling barrier layer disposed between a magnetic reference layer and a magnetic storage layer disposed on a substrate to remove a portion of the film stack from the substrate until an upper surface of the substrate is exposed, forming a sidewall passivation layer on sidewalls of the patterned film stack and subsequently performing a thermal annealing process to the film stack.

Abstract translation: 本公开的实施例提供了用于在自旋传递 - 转矩磁阻随机存取存储器（STT-MRAM）应用中在衬底上制造磁性隧道结（MTJ）结构的方法和装置。 在一个实施例中，该方法包括图案化具有设置在磁参考层和设置在基板上的磁存储层之间的隧道势垒层的膜堆叠，以从基板去除一部分膜叠层，直到基板的上表面 暴露，在图案化膜堆叠的侧壁上形成侧壁钝化层，并随后对膜堆叠进行热退火处理。