中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

36 records (took 0.015 seconds)

    Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor
    22.
    发明授权
    Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor 有权
    具有吸收器的平面化极紫外光刻印刷机及其制造系统

    公开(公告)号：US09581889B2

    公开(公告)日：2017-02-28

    申请号：US14620123

    申请日：2015-02-11

    Applicant: Applied Materials, Inc.

    Inventor： Vinayak Vishwanath Hassan ,  Majeed A. Foad ,  Cara Beasley ,  Ralf Hofmann

    IPC: G03F1/22 ,  G03F1/38 ,  C23C16/06 ,  G03F1/24

    CPC classification number: G03F1/24 ,  C23C16/06 ,  C23C16/44 ,  G03F1/22 ,  G03F1/38

    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.

    Abstract translation: 极紫外（EUV）掩模坯生产系统包括：用于产生真空的基板处理真空室; 在真空中用于输送负载在基板处理真空室中的超低膨胀基板的基板处理平台; 以及用于形成EUV掩模坯料的由基板处理平台接近的多个子室，包括：用于形成多层堆叠的第一子室，在超低膨胀基板上方，用于反射极紫外（EUV） 光; 并且形成在多层叠层上方的用于吸收波长13.5nm的EUV光的双层吸收体的第二子室提供小于1.9％的反射率。

    PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK WITH ABSORBER AND MANUFACTURING SYSTEM THEREFOR
    23.
    发明申请
    PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK WITH ABSORBER AND MANUFACTURING SYSTEM THEREFOR 有权
    具有吸收和制造系统的平面超极紫外光刻机

    公开(公告)号：US20160011500A1

    公开(公告)日：2016-01-14

    申请号：US14620123

    申请日：2015-02-11

    Applicant: Applied Materials, Inc.

    Inventor： Vinayak Vishwanath Hassan ,  Majeed A. Foad ,  Cara Beasley ,  Ralf Hofmann

    IPC: G03F1/22 ,  C23C16/06 ,  G03F1/38

    CPC classification number: G03F1/24 ,  C23C16/06 ,  C23C16/44 ,  G03F1/22 ,  G03F1/38

    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.

    Abstract translation: 极紫外（EUV）掩模坯生产系统包括：用于产生真空的基板处理真空室; 在真空中用于输送负载在基板处理真空室中的超低膨胀基板的基板处理平台; 以及用于形成EUV掩模坯料的由基板处理平台接近的多个子室，包括：用于形成多层堆叠的第一子室，在超低膨胀基板上方，用于反射极紫外（EUV） 光; 并且形成在多层叠层上方的用于吸收波长13.5nm的EUV光的双层吸收体的第二子室提供小于1.9％的反射率。

    Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers
    24.
    发明授权
    Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers 有权
    安全处理低能量，高剂量砷，磷和硼植入晶片

    公开(公告)号：US08927400B2

    公开(公告)日：2015-01-06

    申请号：US14275408

    申请日：2014-05-12

    Applicant: Applied Materials, Inc.

    Inventor： Majeed A. Foad ,  Manoj Vellaikal ,  Kartik Santhanam

    IPC: H01L21/70 ,  H01L21/30 ,  H01J37/32 ,  H01L21/02 ,  H01L21/223 ,  H01L21/316

    CPC classification number: H01L21/3003 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/2236 ,  H01L21/31662

    Abstract: A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.

    Abstract translation: 公开了一种在注入工艺之后防止有毒气体形成的方法。 某些掺杂剂当植入设置在基材上的薄膜时，当暴露于水分时可能发生反应，形成有毒气体和/或可燃气体。 通过将掺杂的膜原位暴露于含氧化合物，浅层注入层堆叠的掺杂剂反应形成掺杂剂氧化物，从而减少潜在的有毒气体和/或可燃气体的形成。 或者，可以在植入膜上原位形成覆盖层以减少有毒气体和/或可燃气体的潜在产生。

Patent Agency Ranking