公开(公告)号：US11094544B2

公开(公告)日：2021-08-17

申请号：US16522226

申请日：2019-07-25

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213 ,  H01L21/321 ,  H01L21/768

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US10760159B2

公开(公告)日：2020-09-01

申请号：US15649584

申请日：2017-07-13

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark Saly ,  Thomas Knisley ,  Benjamin Schmiege ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/458 ,  C23C16/52 ,  C23C16/56

Abstract: Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.

公开(公告)号：US10410865B2

公开(公告)日：2019-09-10

申请号：US16128962

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213 ,  H01L21/321 ,  H01L21/768

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US10233547B2

公开(公告)日：2019-03-19

申请号：US15899234

申请日：2018-02-19

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Nitin K. Ingle ,  Srinivas D. Nemani ,  Jeffrey W. Anthis ,  Xikun Wang ,  Jie Liu ,  David Benjaminson

IPC: C23F1/12 ,  C30B33/12 ,  C23F4/00 ,  H01J37/32

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

公开(公告)号：US20180148466A1

公开(公告)日：2018-05-31

申请号：US15823755

申请日：2017-11-28

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/04 ,  C07F15/02

CPC classification number: C07F15/045 ,  C07F5/00 ,  C07F15/025 ,  C07F15/06

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one aza-allyl ligand having the structure represented by: where each R1-R4 are independently selected from the group consisting of H, branched or unbranched C1-C6 alkyl, branched or unbranched C1-C6 alkenyl, branched or unbranched C1-C6 alkynyl, cycloalkyl groups having in the range of 1 to 6 carbon atoms, silyl groups and halogens. Methods of depositing a film using the metal coordination complex and a suitable reactant are also described.

公开(公告)号：US09896770B2

公开(公告)日：2018-02-20

申请号：US15383556

申请日：2016-12-19

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Nitin K. Ingle ,  Srinivas D. Nemani ,  Jeffrey W. Anthis ,  Xikun Wang ,  Jie Liu ,  David Benjaminson

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25F3/00 ,  C23F1/12 ,  H01J37/32

CPC classification number: C23F1/12 ,  C23F4/00 ,  C30B33/12 ,  H01J37/32009 ,  H01J2237/334

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

公开(公告)号：US20180040486A1

公开(公告)日：2018-02-08

申请号：US15789282

申请日：2017-10-20

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

IPC: H01L21/3213 ,  C23F4/00 ,  C23F1/00 ,  C23F1/12 ,  H01J37/32

CPC classification number: H01L21/32136 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32135

Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

公开(公告)号：US09881787B2

公开(公告)日：2018-01-30

申请号：US15184521

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Benjamin Schmiege ,  Xuesong Lu ,  Juno Yu-Ting Huang ,  Yu Lei ,  Yung-Hsin Lee ,  Srinivas Gandikota ,  Rajkumar Jakkaraju ,  Chikuang Charles Wang ,  Ghazal Saheli ,  Benjamin C. Wang ,  Xinliang Lu ,  Pingyan Lei

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144

Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.

公开(公告)号：US20160222522A1

公开(公告)日：2016-08-04

申请号：US15095342

申请日：2016-04-11

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

IPC: C23F1/12 ,  H01J37/32

CPC classification number: C23F1/12 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/32135 ,  H01L21/32138

Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

公开(公告)号：US20150345028A1

公开(公告)日：2015-12-03

申请号：US14288696

申请日：2014-05-28

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

IPC: C23F1/12 ,  H01L21/3213 ,  H01J37/32

CPC classification number: C23F1/12 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/32135 ,  H01L21/32138

Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

Abstract translation: 本文描述了用于蚀刻难以挥发的金属膜的方法。 这些方法包括将金属膜暴露于含氯前体（例如Cl 2）。 然后从基板处理区域除去氯。 将含碳和氮的前体（例如TMEDA）输送到基底加工区域以形成从金属膜的表面解吸的挥发性金属络合物。 所提供的方法去除金属，同时非常缓慢地除去其它暴露的材料。 金属层的表面上可能存在薄的金属氧化物层，在这种情况下，可以使用来自氢的局部等离子体来除去氧或使近表面区域非晶化，这已经被发现增加了整个蚀刻速率。