公开(公告)号：US20240120210A1

公开(公告)日：2024-04-11

申请号：US17963687

申请日：2022-10-11

Applicant: Applied Materials, Inc.

Inventor： Mikhail Korolik ,  Paul E. Gee ,  Wei Ying Doreen Yong ,  Tuck Foong Koh ,  John Sudijono ,  Philip A. Kraus ,  Thai Cheng Chua

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/32136 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/3065

Abstract: Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.

公开(公告)号：US11760768B2

公开(公告)日：2023-09-19

申请号：US17236020

申请日：2021-04-21

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC: C07F11/00 ,  C23C16/455 ,  C23C16/44 ,  C23C16/02 ,  C23C16/18 ,  C23C16/56

CPC classification number: C07F11/005 ,  C23C16/0272 ,  C23C16/18 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/56 ,  C23C16/0209 ,  C23C16/0227

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20230253201A1

公开(公告)日：2023-08-10

申请号：US18134802

申请日：2023-04-14

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02211 ,  H01L21/0217 ,  C23C16/4408 ,  C23C16/345 ,  C23C16/45553 ,  H01L21/0228

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US20230170217A1

公开(公告)日：2023-06-01

申请号：US18101317

申请日：2023-01-25

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Eswaranand Venkatasubramanian ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono ,  Zhongxin Chen

IPC: H01L21/033 ,  H10B41/27

CPC classification number: H01L21/0332 ,  H01L21/0337 ,  H10B41/27 ,  H01L21/31144

Abstract: Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

公开(公告)号：US11594416B2

公开(公告)日：2023-02-28

申请号：US17007441

申请日：2020-08-31

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Eswaranand Venkatasubramanian ,  Kian Ping Loh ,  Abhijit Basu Mallick ,  John Sudijono ,  Zhongxin Chen

IPC: H01L21/033 ,  H01L27/11556 ,  H01L21/311

Abstract: Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

公开(公告)号：US11552265B2

公开(公告)日：2023-01-10

申请号：US17078509

申请日：2020-10-23

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Xinke Wang ,  John Sudijono ,  Xiao Gong

IPC: H01L51/05 ,  H01L51/10 ,  H01L51/00 ,  H01L27/28

Abstract: Devices comprising a resistance-switching polymer film are described. Also described are methods of making the devices comprising the resistance-switching polymer film.

公开(公告)号：US20220293430A1

公开(公告)日：2022-09-15

申请号：US17590142

申请日：2022-02-01

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Mikhail Korolik ,  Paul E. Gee ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Wei Ying Doreen Yong ,  Kah Wee Ang ,  Samarth Jain

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32

Abstract: Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.

公开(公告)号：US20220127717A1

公开(公告)日：2022-04-28

申请号：US17081494

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Yong Wang ,  Doreen Wei Ying Yong ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC: C23C16/02 ,  C23C16/04 ,  C23C22/77 ,  C23C16/56 ,  C23C22/82

Abstract: Selective deposition methods are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a head group and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

公开(公告)号：US20250051902A1

公开(公告)日：2025-02-13

申请号：US18232631

申请日：2023-08-10

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Bencherki Mebarki ,  Jiecong Tang ,  Mohammed Mahdi Tavakoli ,  John Sudijono ,  Joung Joo Lee

IPC: C23C12/00 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56

Abstract: Transition metal dichalcogenide (TMDC) films and methods for conformally depositing TMDC films on a substrate surface are described. The substrate surface may have one or more features formed therein, one or more layers formed thereon, and combinations thereof. The substrate surface is exposed to a transition metal precursor and an oxidant to form a transition metal oxide film in a first phase. The transition metal oxide film is exposed to a chalcogenide precursor to convert the transition metal oxide film to the TMDC film in a second phase.

公开(公告)号：US20250043413A1

公开(公告)日：2025-02-06

申请号：US18228555

申请日：2023-07-31

Applicant: Applied Materials, Inc.

Inventor： Sze Chieh Yvonne Tan ,  Vicknesh Sahmuganathan ,  John Sudijono ,  Philip Allan Kraus ,  Christian Valencia ,  Thai Cheng Chua

IPC: C23C16/27 ,  C23C16/02 ,  C23C16/511 ,  C23C16/52

Abstract: Embodiments include a modular high-frequency emission source for growth of a low roughness nanocrystalline diamond film. In an embodiment, a method of fabricating a nanocrystalline diamond (NCD) film includes loading a nanodiamond-seeded silicon wafer or a bare silicon wafer that has been surface-treated and incubated into a microwave plasma-enhanced chemical vapor deposition (MWPECVD) chamber, and processing the nanodiamond-seeded silicon wafer or the bare silicon wafer that has been surface-treated and incubated with a plasma of CxHy (y≥x), CO2 and H2, at power greater than 50 W, to form a layer of nanocrystalline diamond thereon.