MOSFET pair with stack capacitor and manufacturing method thereof
    23.
    发明授权
    MOSFET pair with stack capacitor and manufacturing method thereof 有权
    MOSFET堆叠电容器及其制造方法

    公开(公告)号:US08269330B1

    公开(公告)日:2012-09-18

    申请号:US13092163

    申请日:2011-04-22

    IPC分类号: H01L23/02

    摘要: A MOSFET pair with a stack capacitor is disclosed herein. It can regulate the input voltage and optimize a short EMI loop. It has a bottom lead frame and an up lead frame, which can simultaneously dissipate the heat generated by two MOSFETs to achieve excellent thermal-dissipation. It can adopt solder, Ag epoxy, or gold balls to implement the electrical bonding of two MOSFETs with the bottom lead frame and the up lead frame to achieve excellent structural flexibility. A device, such as an IGBT, a diode, an inductor, a choke, and a heat sink, can be stacked above the up lead frame to form a powerful SiP module. A corresponding method of manufacturing the MOSFET pair with a stack capacitor is also disclosed herein, which is simple, time-saving, flexible, cost-effective, and facile.

    摘要翻译: 本文公开了具有堆叠电容器的MOSFET对。 它可以调节输入电压并优化短路电流环路。 它具有底部引线框架和引脚框架,可以同时消散两个MOSFET产生的热量,从而实现出色的散热。 它可以采用焊料,Ag环氧树脂或金球,以实现两个MOSFET与底部引线框架和上引线框架的电连接,以实现优异的结构灵活性。 诸如IGBT,二极管,电感器,扼流器和散热器的器件可以堆叠在引导框架上方以形成强大的SiP模块。 本文还公开了制造具有堆叠电容器的MOSFET对的相应方法,其简单,省时,灵活,成本有效且容易。