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公开(公告)号:US08824165B2
公开(公告)日:2014-09-02
申请号:US13185573
申请日:2011-07-19
申请人: Da-Jung Chen , Chau-Chun Wen , Chun-Tiao Liu
发明人: Da-Jung Chen , Chau-Chun Wen , Chun-Tiao Liu
IPC分类号: H05K5/02
CPC分类号: H05K1/181 , H01F27/027 , H01L2224/48091 , H01L2224/48227 , H01L2924/181 , H01L2924/19105 , H05K3/3421 , H05K2201/1003 , H05K2201/10515 , H05K2201/10537 , H05K2201/10924 , Y02P70/611 , H01L2924/00012 , H01L2924/00014
摘要: An electronic package structure including at least one first electronic element, a second electronic element and a lead frame is provided. The second electronic element includes a body having a cavity. The first electronic element is disposed in the cavity. The lead frame has a plurality of leads. Each of the leads has a first end and a second end. The first end of at least one of the leads extends to the cavity to electrically connect the first electronic element.
摘要翻译: 提供了包括至少一个第一电子元件,第二电子元件和引线框架的电子封装结构。 第二电子元件包括具有空腔的主体。 第一电子元件设置在空腔中。 引线框架具有多个引线。 每个引线具有第一端和第二端。 至少一个引线的第一端延伸到腔体以电连接第一电子元件。
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公开(公告)号:US20120313229A1
公开(公告)日:2012-12-13
申请号:US13590197
申请日:2012-08-21
申请人: Han-Hsiang Lee , Yi-Cheng Lin , Da-Jung Chen
发明人: Han-Hsiang Lee , Yi-Cheng Lin , Da-Jung Chen
IPC分类号: H01L23/495 , H01L21/60
CPC分类号: H01L23/49568 , H01L23/3107 , H01L23/49537 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L23/49589 , H01L23/552 , H01L24/73 , H01L25/072 , H01L25/165 , H01L2224/16245 , H01L2224/32245 , H01L2224/33181 , H01L2224/48247 , H01L2224/73253 , H01L2224/73265 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00
摘要: The invention discloses a package structure for better heat-dissipation or EMI performance. A first conductive element and a second conductive element are both disposed between the top lead frame and the bottom lead frame. The first terminal of the first conductive element is electrically connected to the bottom lead frame, and the second terminal of the first conductive element is electrically connected to the top lead frame. The third terminal of the second conductive element is electrically connected to the bottom lead frame, and the fourth terminal of the second conductive element is electrically connected to the top lead frame. In one embodiment, a heat dissipation device is disposed on the top lead frame. In one embodiment, the molding compound is provided such that the outer leads of the top lead frame are exposed outside the molding compound.
摘要翻译: 本发明公开了一种用于更好散热或EMI性能的封装结构。 第一导电元件和第二导电元件都设置在顶部引线框架和底部引线框架之间。 第一导电元件的第一端子电连接到底部引线框架,并且第一导电元件的第二端子电连接到顶部引线框架。 第二导电元件的第三端子电连接到底部引线框架,并且第二导电元件的第四端子电连接到顶部引线框架。 在一个实施例中,散热装置设置在顶部引线框架上。 在一个实施方案中,模塑料被设置成使得顶部引线框架的外部引线暴露在模塑料外部。
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公开(公告)号:US08269330B1
公开(公告)日:2012-09-18
申请号:US13092163
申请日:2011-04-22
申请人: Han-Hsiang Lee , Yi-Cheng Lin , Da-Jung Chen
发明人: Han-Hsiang Lee , Yi-Cheng Lin , Da-Jung Chen
IPC分类号: H01L23/02
CPC分类号: H01L23/3107 , H01L23/4951 , H01L23/49562 , H01L23/49589 , H01L2224/0401 , H01L2224/06181 , H01L2224/16245 , H01L2224/32245 , H01L2224/73253 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/19106 , H01L2924/00
摘要: A MOSFET pair with a stack capacitor is disclosed herein. It can regulate the input voltage and optimize a short EMI loop. It has a bottom lead frame and an up lead frame, which can simultaneously dissipate the heat generated by two MOSFETs to achieve excellent thermal-dissipation. It can adopt solder, Ag epoxy, or gold balls to implement the electrical bonding of two MOSFETs with the bottom lead frame and the up lead frame to achieve excellent structural flexibility. A device, such as an IGBT, a diode, an inductor, a choke, and a heat sink, can be stacked above the up lead frame to form a powerful SiP module. A corresponding method of manufacturing the MOSFET pair with a stack capacitor is also disclosed herein, which is simple, time-saving, flexible, cost-effective, and facile.
摘要翻译: 本文公开了具有堆叠电容器的MOSFET对。 它可以调节输入电压并优化短路电流环路。 它具有底部引线框架和引脚框架,可以同时消散两个MOSFET产生的热量,从而实现出色的散热。 它可以采用焊料,Ag环氧树脂或金球,以实现两个MOSFET与底部引线框架和上引线框架的电连接,以实现优异的结构灵活性。 诸如IGBT,二极管,电感器,扼流器和散热器的器件可以堆叠在引导框架上方以形成强大的SiP模块。 本文还公开了制造具有堆叠电容器的MOSFET对的相应方法,其简单,省时,灵活,成本有效且容易。
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公开(公告)号:US20100117216A1
公开(公告)日:2010-05-13
申请号:US12540021
申请日:2009-08-12
申请人: BAU-RU LU , Chau-Chun Wen , Da-Jung Chen , Chun-Hsien Lu
发明人: BAU-RU LU , Chau-Chun Wen , Da-Jung Chen , Chun-Hsien Lu
IPC分类号: H01L23/48
CPC分类号: H01L23/49811 , H01L23/36 , H01L23/3735 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/49 , H01L2224/73265 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/1305 , H01L2924/13055 , H01L2924/15312 , H01L2924/1532 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要: A chip package structure including a substrate, at least one chip, a heat dissipation device, at least one first conductive bar, a molding compound, and at least one second conductive bar is provided. The chip and the heat dissipation device are respectively disposed on a first and a second surface of the substrate. The first conductive bar has two opposite end surfaces, wherein one end surface is disposed on the first surface of the substrate, the other end surface is extended away from the substrate, and a fastening slot is disposed between the two end surfaces and passes through the other end surface. The molding compound encapsulates the substrate, the chip, part of the heat dissipation device, and the first conductive bar. The second conductive bar is disposed on one surface of the molding compound and has a protrusion portion fastened to the fastening slot of the first conductive bar.
摘要翻译: 提供一种芯片封装结构,包括基板,至少一个芯片,散热装置,至少一个第一导电棒,模塑料和至少一个第二导电棒。 芯片和散热装置分别设置在基板的第一和第二表面上。 第一导电棒具有两个相对的端面,其中一个端面设置在基板的第一表面上,另一端表面远离基板延伸,并且紧固槽设置在两个端面之间并穿过 另一端面。 模塑料封装基板,芯片,散热装置的一部分和第一导电棒。 第二导电棒设置在模制化合物的一个表面上,并且具有紧固到第一导电棒的紧固槽的突起部分。
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公开(公告)号:US07551455B2
公开(公告)日:2009-06-23
申请号:US11482370
申请日:2006-07-07
申请人: Da-Jung Chen , Yi-Cheng Lin , Bau-Ru Lu , Yi-Min Fang , Chau-Chun Wen , Chun-Tiao Liu
发明人: Da-Jung Chen , Yi-Cheng Lin , Bau-Ru Lu , Yi-Min Fang , Chau-Chun Wen , Chun-Tiao Liu
IPC分类号: H05K7/00
CPC分类号: H01L23/49575 , H01L23/3107 , H01L23/49531 , H01L24/48 , H01L24/49 , H01L2224/48091 , H01L2224/48247 , H01L2224/4911 , H01L2924/00014 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , Y10T29/49121 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012
摘要: A package structure including a first carrier, a second carrier, at least a first electronic component and at least a second electronic component is provided. The second carrier is electrically connected to the first carrier. The first electronic component is disposed on the first carrier and electrically connected to the first carrier. The second electronic component is disposed on the second carrier and electrically connected to the second carrier.
摘要翻译: 提供包括第一载体,第二载体,至少第一电子部件和至少第二电子部件的封装结构。 第二载体电连接到第一载体。 第一电子部件设置在第一载体上并电连接到第一载体。 第二电子部件设置在第二载体上并电连接到第二载体。
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公开(公告)号:US06975513B2
公开(公告)日:2005-12-13
申请号:US10437183
申请日:2003-05-14
申请人: Da-Jung Chen , Chin-Hsiung Liao
发明人: Da-Jung Chen , Chin-Hsiung Liao
IPC分类号: H01L23/373 , H01L23/433 , H01L23/495 , H05K7/20
CPC分类号: H01L23/3735 , H01L23/4334 , H01L23/49575 , H01L24/48 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要: A high-density power module package wherein the circuits and a part of chips of the power module are formed on respective substrates such that the circuit patterns are not influenced by the chips. Accordingly, the density of the circuit can be improved so as to save the required area of substrate and production cost.
摘要翻译: 一种高密度功率模块封装,其中电路和功率模块的芯片的一部分形成在各个基板上,使得电路图案不受芯片的影响。 因此,可以提高电路的密度,以节省基板所需的面积和生产成本。
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公开(公告)号:US09601412B2
公开(公告)日:2017-03-21
申请号:US13612852
申请日:2012-09-13
申请人: Da-Jung Chen , Chun-Tiao Liu , Chau-Chun Wen
发明人: Da-Jung Chen , Chun-Tiao Liu , Chau-Chun Wen
IPC分类号: H01L23/495 , H01L23/552 , H01L23/00 , H01L25/10
CPC分类号: H01L25/162 , H01L23/04 , H01L23/495 , H01L23/49517 , H01L23/49555 , H01L23/49558 , H01L23/49562 , H01L23/49575 , H01L23/49811 , H01L23/49861 , H01L23/552 , H01L23/645 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/105 , H01L25/16 , H01L2224/16245 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2225/1029 , H01L2924/00014 , H01L2924/09701 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/3025 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要: The present invention discloses a three-dimensional package structure. The first conductive element comprises a top surface, a bottom surface and a lateral surface. The conductive pattern disposed on the top surface of the first conductive element. A second conductive element is disposed on the conductive pattern. The first conductive element is electrically connected to the conductive pattern, and the second conductive element is electrically connected to the conductive pattern. In one embodiment, the shielding layer is a portion of the patterned conductive layer.
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公开(公告)号:US09386686B2
公开(公告)日:2016-07-05
申请号:US13450229
申请日:2012-04-18
申请人: Chi-Feng Huang , Bau-Ru Lu , Da-Jung Chen , Jeng-Jen Li
发明人: Chi-Feng Huang , Bau-Ru Lu , Da-Jung Chen , Jeng-Jen Li
CPC分类号: H05K1/0204 , H01L2224/48091 , H01L2224/48247 , H01L2224/48248 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H05K1/0203 , H05K1/021 , H05K1/181 , H05K1/184 , H05K3/445 , H05K2201/10515 , Y02P70/611 , H01L2924/00014 , H01L2924/00
摘要: An electronic package structure is provided which comprises a metal core PCB, an energy storage device and at least one electronic component. The at least one electronic component is disposed between the metal core PCB and the energy storage device. The metal core PCB defines at least a through hole. A thermal passage is disposed in the through hole. An insulating layer is disposed in the through hole and located between the metal layer of the metal core PCB and the thermal passage to prevent the electric coupling between the thermal passage and the metal layer. The energy storage device comprises at least a connecting pin in thermal contact with the thermal passage.
摘要翻译: 提供一种电子封装结构,其包括金属芯PCB,能量存储装置和至少一个电子元件。 至少一个电子部件设置在金属芯PCB和能量存储装置之间。 金属芯PCB至少定义一个通孔。 热通道设置在通孔中。 绝缘层设置在通孔中并且位于金属芯PCB的金属层和热通道之间,以防止热通道和金属层之间的电耦合。 能量存储装置至少包括与热通道热接触的连接销。
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公开(公告)号:US09000576B2
公开(公告)日:2015-04-07
申请号:US13590197
申请日:2012-08-21
申请人: Han-Hsiang Lee , Yi-Cheng Lin , Da-Jung Chen
发明人: Han-Hsiang Lee , Yi-Cheng Lin , Da-Jung Chen
IPC分类号: H01L23/02 , H01L23/31 , H01L23/495
CPC分类号: H01L23/49568 , H01L23/3107 , H01L23/49537 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L23/49589 , H01L23/552 , H01L24/73 , H01L25/072 , H01L25/165 , H01L2224/16245 , H01L2224/32245 , H01L2224/33181 , H01L2224/48247 , H01L2224/73253 , H01L2224/73265 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00
摘要: The invention discloses a package structure for better heat-dissipation or EMI performance. A first conductive element and a second conductive element are both disposed between the top lead frame and the bottom lead frame. The first terminal of the first conductive element is electrically connected to the bottom lead frame, and the second terminal of the first conductive element is electrically connected to the top lead frame. The third terminal of the second conductive element is electrically connected to the bottom lead frame, and the fourth terminal of the second conductive element is electrically connected to the top lead frame. In one embodiment, a heat dissipation device is disposed on the top lead frame. In one embodiment, the molding compound is provided such that the outer leads of the top lead frame are exposed outside the molding compound.
摘要翻译: 本发明公开了一种用于更好散热或EMI性能的封装结构。 第一导电元件和第二导电元件都设置在顶部引线框架和底部引线框架之间。 第一导电元件的第一端子电连接到底部引线框架,并且第一导电元件的第二端子电连接到顶部引线框架。 第二导电元件的第三端子电连接到底部引线框架,并且第二导电元件的第四端子电连接到顶部引线框架。 在一个实施例中,散热装置设置在顶部引线框架上。 在一个实施方案中,模塑料被设置成使得顶部引线框架的外部引线暴露在模塑料外部。
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公开(公告)号:US08338928B2
公开(公告)日:2012-12-25
申请号:US11847351
申请日:2007-08-30
申请人: Da-Jung Chen , Chun-Tiao Liu , Chau-Chun Wen
发明人: Da-Jung Chen , Chun-Tiao Liu , Chau-Chun Wen
IPC分类号: H01L23/02
CPC分类号: H01L23/495 , H01L23/49555 , H01L23/49575 , H01L23/552 , H01L24/48 , H01L2224/48091 , H01L2924/00014 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/3025 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: A three-dimensional package structure includes an energy storage element, a semiconductor package body and a shielding layer. The semiconductor package body has a plurality of second conductive elements and at least one control device inside. The energy storage element is disposed on the semiconductor package body. The energy storage element including a magnetic body is electrically connected to the second conductive elements. The semiconductor package body or the energy storage element has a plurality of first conductive elements to be electrically connected to an outside device. The shielding layer is disposed between the control component and at least part of the magnetic body to inhibit or reduce EMI (Electro-Magnetic Interference) from the energy storage element and to get a tiny package structure. The three-dimensional package structure is applicable to a POL (Point of Load) converter.
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