摘要:
A pad (20) is electrically connected to a first I/O cell (14) while also physically overlying active circuitry of a second I/O cell (16). Note that although the pad (20) overlies the second I/O cell (16), the pad (20) is not electrically connected to the I/O cell (16). Such a pattern may be replicated in any desired manner so that the I/O cells (e.g. 300-310) may have a finer pitch than the corresponding pads (320-324 and 330-335). In addition, the size of the pads may be increased (e.g. pad 131 may be bigger than pad 130) while the width “c” of the I/O cells (132-135) does not have to be increased. Such a pattern (e.g. 500) may be arranged so that the area required in one or more dimensions may be minimized.
摘要:
An ESD protection circuit (81) and a method for providing ESD protection is provided. In some embodiments, an N-channel transistor (24), which can be ESD damaged, is selectively turned on and made conducting. The purpose of turning on the N-channel transistor (24) is to maximize the Vt1 of the N-channel transistor (24). Vt1 is the drain-to-source voltage point at which the parasitic bipolar action of the N-channel transistor (24) first occurs. In some embodiments, the ESD protection circuit (81) includes a diode (64) which provides an additional current path from the I/O pad 31 to a first power supply node (76).
摘要:
An integrated circuit (50) has a wire bond pad (53). The wire bond pad (53) is formed on a passivation layer (18) over active circuitry (26) and/or electrical interconnect layers (24) of the integrated circuit (50). The wire bond pad (53) is connected to a plurality of final metal layer portions (51, 52). The plurality of final metal layer portions (51, 52) are formed in a final interconnect layer of the interconnect layers (24). In one embodiment, the bond pad (53) is formed from aluminum and the final metal layer pads are formed from copper. The wire bond pad (53) allows routing of conductors in a final metal layer (21) directly underlying the bond pad (53), thus allowing the surface area of the semiconductor die to be reduced.
摘要:
A body-tied MOSFET (14) is used in a protection circuit (10) of an SOI device (20) where the MOSFET's drain regions (38) lie outside MOSFET's closed-gate electrode (34). Electrical characteristics of the body-tied MOSFET (14) can be changed by varying the ratio of the total source region area to the total body-tied region area (tie frequency). The total electrical device width is the sum of the individual source region (36) widths. More charge can be placed on the drain region (38) compared to a drain region on the inside because the interfacial area between the drain region and channel region is larger. The device (20) can be formed without having to develop new processing steps or use marginal processing steps. Body ties to an underlying substrate are unnecessary.
摘要:
A replacement rod for insertion into a nuclear fuel assembly to replace a fuel rod containing a neutron absorbing, fissile fuel, includes Hafnium sufficient to substantially replace the neutron absorption capacity of the fuel rod. The replacement rod also includes a non-fissile second material that is commonly used for structures in nuclear fuel assemblies. The second material is preferably selected from the group consisting of a stainless steel, a zirconium alloy and zirconium. In one embodiment, the Hafnium is fabricated into a cylindrically-shaped rodlet, or core, and the second material is fabricated into an annulus around the core. Alternatively, the Hafnium and the second material are each distributed about uniformly throughout a cylindrical volume of the replacement rod. Refurbishing nuclear fuel assemblies by replacing damaged fuel rods with replacement rods according to the invention obtains an improved peaking factor over prior art methods.
摘要:
A value opening air flow control ring requires the poppet to travel a controlled distance off the poppet seat to obtain substantially unrestricted air flow, the restricted flow occurring during air flow pulsations which acts to inhibit valve pulsations and resulting valve noises generated by pulsations from the vacuum source. The control ring also causes directional air flow past the poppet, particularly in the early part of the valve opening sequence while the restricted flow is occurring, causing a side bias on the poppet which decreases as the poppet moves toward its fully open position, the side bias being substantially eliminated by the time the poppet reaches its fully open position. The side bias action is reversed in the valve closing movement from the fully open position. The side bias further inhibits valve pulsations which might otherwise occur as the valve tends to move from the closed position to the open position and vice versa in response to vacuum source air flow pulsations.
摘要:
A method of and apparatus for directing and regulating the flow of combustion air to opposite ends of the regenerators of a regenerative tank-type glass melting furnace so as to minimize localized overheating and more uniformly heat the checkerworks of the regenerators, thereby improving the operating efficiency and prolonging the useful life thereof. To accomplish these ends, a substantial portion of the combustion air supplied to the regenerators is delivered to their downstream ends while a lesser portion is supplied to their upstream ends by ducts which include valves for cycling and a damper for apportioning the amount of combustion air flowing to opposite ends of the regenerators.
摘要:
An integrated circuit includes a plurality of I/O cells, each including a portion of the first power bus, a portion of the second power bus, and an I/O pad coupled between the portions of the first and second power buses. A first set of the plurality of I/O cells is arranged along a die edge of the integrated circuit. A second set of the plurality of I/O cells is arranged along the die edge between the first set and the die edge. For each I/O cell in the first set, the portion of the first power bus is physically connected to the portion of the first power bus of an abutting I/O cell of the second set at a boundary between the I/O cell of the first set and the abutting I/O cell of the second set. The integrated circuit includes an ESD clamp and a trigger circuit.
摘要:
An integrated circuit includes a high speed circuit, an interconnect pad, a passivation layer under the interconnect pad, a first patterned metal layer, and a first via. The high speed circuit is for a high speed signal at a terminal of the high speed circuit. The interconnect pad is on a top surface of the integrated circuit structure. The first patterned metal layer is under the passivation layer having a first portion and a second portion. The first portion of the first patterned metal layer is connected to the terminal of the high speed circuit. The second portion of the first patterned metal layer is under the interconnect pad and is electrically floating when the high frequency signal is present on the interconnect pad portion. The result is reduced capacitive loading on the high speed signal which improves performance.
摘要:
A platform assembly can be used in a motor vehicle, such as a truck, to support a person or objects. The platform assembly can have a frame with pivotal attachments to allow the frame to be at least partially collapsible. The platform can pivotally and removably attach to the frame.