公开(公告)号：US20050279170A1

公开(公告)日：2005-12-22

申请号：US11149176

申请日：2005-06-10

申请人： Katsuya Okumura ,  Toshiyuki Matsumoto ,  Naoki Ikeuchi ,  Masami Yakabe

发明人： Katsuya Okumura ,  Toshiyuki Matsumoto ,  Naoki Ikeuchi ,  Masami Yakabe

IPC分类号： B81C99/00 ,  G01C19/56 ,  G01C25/00 ,  G01N29/00 ,  G01N29/09 ,  G01N29/12 ,  G01N29/30 ,  G01N29/42 ,  G01N29/46 ,  G01P15/12 ,  G01P21/00 ,  H01L29/84

CPC分类号： G01C19/5719 ,  B81C99/005 ,  G01C25/005 ,  G01N29/12 ,  G01N29/30 ,  G01N29/42 ,  G01N29/46 ,  G01N2291/2695 ,  G01N2291/2697 ,  G01P15/123 ,  G01P21/00 ,  G01P2015/0842

摘要： Test sound wave is outputted from a speaker. A movable part of a three-axis acceleration sensor, which is a micro structure of a chip to be tested TP, moves due to the arrival of the test sound wave which is compression wave outputted from the speaker, that is, due to air vibrations. A change in the resistance value that changes in accordance with this movement is measured on the basis of an output voltage that is provided via a probe needles. A control part determines the property of the three-axis acceleration sensor on the basis of the measured property values, that is, measured data.

摘要翻译： 测试声波从扬声器输出。 作为被测试芯片TP的微结构的三轴加速度传感器的可动部分由于扬声器输出的压缩波的测试声波的到来而移动，即由于空气振动 。 基于通过探针提供的输出电压来测量根据该移动而变化的电阻值的变化。 控制部件基于测量的属性值，即测量数据来确定三轴加速度传感器的特性。

公开(公告)号：US20050087853A1

公开(公告)日：2005-04-28

申请号：US10855889

申请日：2004-05-28

申请人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

发明人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/12 ,  H01L23/48 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L23/02 ,  H05K7/02

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.

摘要翻译： 本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接， 其制造方法。 根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

公开(公告)号：US06788985B2

公开(公告)日：2004-09-07

申请号：US09867465

申请日：2001-05-31

申请人： Kunihiro Mitsutake ,  Katsuya Okumura

发明人： Kunihiro Mitsutake ,  Katsuya Okumura

IPC分类号： G06F1900

CPC分类号： G06Q30/06 ,  G06Q30/0601

摘要： An electronic commerce for semiconductor products comprises a network, a client terminal, a connection server, a virtual production line, and a real production line. The real production line actually manufactures semiconductor products. The virtual production line provides a computer with substantially the same functions as the real production line and computes an optimal lot progress. The connection server connects the virtual production line to the client terminal via the network. When a condition is entered from the client terminal, the connection server transfers this condition to the virtual production line. Simulation is performed realtime for determining whether a product flows in the virtual production line under the transferred condition. The connection server transfers a simulation result to the client terminal. Based on the simulation result, a electronic commerce is conducted.

摘要翻译： 半导体产品的电子商务包括网络，客户终端，连接服务器，虚拟生产线和实际生产线。 实际生产线实际上是生产半导体产品。 虚拟生产线为计算机提供与实际生产线基本相同的功能，并计算最佳批量进度。 连接服务器通过网络将虚拟生产线连接到客户终端。 当从客户终端输入条件时，连接服务器将该条件传送到虚拟生产线。 实时进行模拟，以确定产品是否在转移条件下在虚拟生产线中流动。 连接服务器将模拟结果传送到客户终端。 基于模拟结果，进行电子商务。

公开(公告)号：US06723572B2

公开(公告)日：2004-04-20

申请号：US10139278

申请日：2002-05-07

申请人： Hiroyuki Yano ,  Katsuya Okumura

发明人： Hiroyuki Yano ,  Katsuya Okumura

IPC分类号： H01L2166

CPC分类号： H01L22/26 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A to-be-polished surface of a semiconductor workpiece is polished to a target shape, using a CMP tool. The to-be-polished surface is a surface of a metal provided on an insulating film having trenches. A shape of a polished surface of the semiconductor workpiece is monitored to determine if a metal residue exists outside of the trenches on the polished surface while the semiconductor workpiece is set in the CMP tool, using a monitor. The monitor has a sensor that obtains a two-dimensional image of the to-be-polished surface. The CMP tool is controlled by feedback based on a result of monitoring to determine if the metal residue exists, using a controller.

摘要翻译： 使用CMP工具将半导体工件的待抛光表面抛光至目标形状。 被抛光表面是设置在具有沟槽的绝缘膜上的金属表面。 监测半导体工件的抛光表面的形状，以确定当使用监视器将半导体工件设置在CMP工具中时，金属残留物是否存在于抛光表面上的沟槽外部。 显示器具有获得被抛光表面的二维图像的传感器。 CMP工具由基于监测结果的反馈控制，以使用控制器确定是否存在金属残留物。

公开(公告)号：US06633045B1

公开(公告)日：2003-10-14

申请号：US09667521

申请日：2000-09-22

申请人： Kazuyoshi Sugihara ,  Atsushi Ando ,  Katsuya Okumura

发明人： Kazuyoshi Sugihara ,  Atsushi Ando ,  Katsuya Okumura

IPC分类号： G21G500

CPC分类号： H05K3/0061 ,  H01J2237/3175 ,  H05K1/0284 ,  H05K1/0393 ,  H05K1/056 ,  H05K3/048 ,  H05K3/28 ,  H05K3/365 ,  H05K3/386 ,  H05K2201/0154 ,  H05K2203/066 ,  H05K2203/135

摘要： An assembly part for constituting a unit in a vacuum column is provided with wirings and wiring terminals. Each wiring is provided on a first insulating film, and is covered with a second insulating film made of an electro-deposited polyimide film. The assembly part is used to constitute a semiconductor manufacturing system such as an electron beam exposure system.

摘要翻译： 用于构成真空塔中的单元的组装部分设置有布线和布线端子。 每个布线设置在第一绝缘膜上，并被由电沉积聚酰亚胺膜制成的第二绝缘膜覆盖。 组装部分用于构成诸如电子束曝光系统的半导体制造系统

公开(公告)号：US06570169B2

公开(公告)日：2003-05-27

申请号：US10036453

申请日：2002-01-07

申请人： Kyoichi Suguro ,  Katsuya Okumura

发明人： Kyoichi Suguro ,  Katsuya Okumura

IPC分类号： H01J37317

CPC分类号： H01L21/26593 ,  H01J37/3171 ,  H01L21/26513 ,  H01L21/324

摘要： The purpose of the present invention is to avoid a decrease in the mechanical strength of a Si substrate because of the repetition of ion-implantation and annealing processes. As ions are implanted while the Si substrate surface temperature is kept at as low as −60° C. or less. Then the Si substrate is heated to recover the implantation defects caused by the ion-implantation. Such a combination of the low temperature ion-implantation and the annealing processes is repeated as required.

公开(公告)号：US06547638B2

公开(公告)日：2003-04-15

申请号：US09804232

申请日：2001-03-13

申请人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Seiji Ishikawa ,  Manabu Tsujimura

发明人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Seiji Ishikawa ,  Manabu Tsujimura

IPC分类号： B24B5100

CPC分类号： H01L21/67161 ,  B08B1/04 ,  B24B27/0023 ,  B24B37/04 ,  B24B37/345 ,  B24B51/00 ,  B24B55/12 ,  F24F3/161 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67167 ,  H01L21/67219 ,  H01L21/67745 ,  H01L21/67778 ,  H03M13/39 ,  H04N5/4401 ,  H04N5/455

摘要： A polishing apparatus includes an arrangement of a plurality of units to deal with various operations and a robot having at least one arm. The plurality of units are disposed around the robot and include a loading unit for receiving thereon a, e.g. dry, workpiece to be polished, a polishing system including at least one polishing unit for polishing the workpiece, a washing system and a drying system at least including one washing unit for washing and drying the polished workpiece, and an unloading unit for receiving thereon a resultant clean and dry polished workpiece.

公开(公告)号：US06525328B1

公开(公告)日：2003-02-25

申请号：US09624355

申请日：2000-07-24

申请人： Motosuke Miyoshi ,  Yuichiro Yamazaki ,  Katsuya Okumura

发明人： Motosuke Miyoshi ,  Yuichiro Yamazaki ,  Katsuya Okumura

IPC分类号： H01J3730

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： An electron beam lithography system 10 comprises an electron gun including a rectangular cathode 1 having an emission surface having an aspect ratio of other than 1, an illumination optical system 3 of an asymmetric lens system including multipole lenses Qa1 and Qa2, a CP aperture 5, and a projection optical system 8 of a symmetric lens system including multipole lenses Qb1 through Qb4. This electron beam lithography system 10 is used for emitting an electron beam at a low acceleration of 5 kV or less from the rectangular cathode 1, for controlling the illumination optical system so as to form an image of a desired character of the CP aperture 5 on an isotropic plane of incidence at different demagnifications in minor-axis and major-axis directions in accordance with the aspect ratio of the rectangular cathode 1, and for controlling the projection optical system 8 so that the electron beam leaving the CP aperture 5 as an aperture image is incident on a substrate 21 at the same demagnification in the minor-axis and major-axis directions and at different incident angles in the minor-axis and major-axis directions while passing through the trajectory without establishing any crossovers.

摘要翻译： 电子束光刻系统10包括电子枪，其包括具有不同于1的纵横比的发射表面的矩形阴极1，包括多极透镜Qa1和Qa2的非对称透镜系统的照明光学系统3，CP孔5， 以及包括多极透镜Qb1至Qb4的对称透镜系统的投影光学系统8。 该电子束光刻系统10用于从矩形阴极1以5kV以下的低加速度发射电子束，用于控制照明光学系统，以便形成CP孔5的所需字符的图像 根据矩形阴极1的纵横比在短轴和长轴方向上的不同缩小的各向同性平面，并且用于控制投影光学系统8，使得离开CP孔5的电子束作为孔 图像在短轴和长轴方向上以相同的缩小入射在基板21上，并且在短轴和长轴方向上以不同的入射角同时穿过轨迹而不建立任何交叉。

公开(公告)号：US06414499B2

公开(公告)日：2002-07-02

申请号：US09846372

申请日：2001-05-02

申请人： Hiroyuki Yano ,  Katsuya Okumura

发明人： Hiroyuki Yano ,  Katsuya Okumura

IPC分类号： G02R31308

CPC分类号： H01L22/26 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： An equipment for manufacturing semiconductor devices, comprises a processing tool which processes a to-be-processed surface of a semiconductor workpiece to a target shape, a monitor which three-dimensionally monitors a shape of a processed surface of the semiconductor workpiece while the semiconductor workpiece is set in the processing tool, and a controller which controls the processing tool in a feedback manner on the basis of the shape of the processed surface monitored by the monitor. If the shape of the processed surface deviates from the target shape, the controller adjusts process conditions of the processing tool so that the target shape can be obtained.

摘要翻译： 一种用于制造半导体器件的设备，包括将半导体工件的待处理表面处理为目标形状的处理工具，在半导体工件的三维监视半导体工件的加工表面的形状的监视器 设置在处理工具中，以及控制器，其基于由监视器监视的处理表面的形状以反馈方式控制处理工具。 如果处理后的表面的形状偏离目标形状，则控制器调整加工工具的工艺条件，从而可以获得目标形状。

公开(公告)号：US06368951B2

公开(公告)日：2002-04-09

申请号：US09903992

申请日：2001-07-13

申请人： Kazuyuki Higashi ,  Noriaki Matsunaga ,  Akihiro Kajita ,  Tetsuo Matsuda ,  Tadashi Iijima ,  Hisashi Kaneko ,  Hideki Shibata ,  Naofumi Nakamura ,  Minakshisundaran Balasubramanian Anand ,  Tadashi Matsuno ,  Katsuya Okumura

发明人： Kazuyuki Higashi ,  Noriaki Matsunaga ,  Akihiro Kajita ,  Tetsuo Matsuda ,  Tadashi Iijima ,  Hisashi Kaneko ,  Hideki Shibata ,  Naofumi Nakamura ,  Minakshisundaran Balasubramanian Anand ,  Tadashi Matsuno ,  Katsuya Okumura

IPC分类号： H01L214763

CPC分类号： H01L21/76852 ,  H01L21/288 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/5226 ,  H01L2221/1026 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device manufacturing method comprises a step of forming a trench to a first insulation film formed on a semiconductor substrate, and forming a lower level wiring in the trench, a step of forming at least one conductive layer on the semiconductor substrate to coat the lower level wiring, a step of forming at least one thin film layer on the conductive layer, a step of forming a hard mask by patterning the thin film, a step of etching the conductive layer by using the hard mask as an etching mask, and forming a conductive pillar-shaped structure, whose upper surface is covered with the hard mask, on the lower level wiring, a step of forming a second insulation film on the semiconductor substrate so that the pillar-shaped structure is buried, a step of forming a wiring trench in which at least the hard mask is exposed, and a step of burying a conductor into the wiring trench after the hard mask is removed, and forming an upper level wiring in the wiring trench.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在形成于半导体衬底上的第一绝缘膜上形成沟槽，在所述沟槽中形成下层配线的工序，在所述半导体衬底上形成至少一层导体层， 在导电层上形成至少一层薄膜层的步骤，通过图案化薄膜形成硬掩模的步骤，通过使用硬掩模作为蚀刻掩模蚀刻导电层的步骤，以及形成 导电柱状结构，其上表面被硬掩模覆盖在下层布线上;在半导体基板上形成第二绝缘膜以使柱状结构被埋设的步骤，形成 至少暴露硬掩模的布线沟槽以及在去除硬掩模之后将导体埋入布线沟槽中的步骤，以及在布线沟槽中形成上层布线。