Abstract:
886,393. Coating with germanium. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 16, 1960 [June 30, 1959], No. 21142/60. Class 82(2). [Also in Group XXXVI] A semi-conductor device is made by epitaxially depositing germanium on a gallium arsenide substrate. The device may be produced in the apparatus shown, germanium source 6 and iodine 7 being heated to 550‹C. by coil 2a to form germanium iodide which decomposes on gallium arsenide substrate 5 (maintained at 420‹C. by coil 2b) to deposit germanium layer 9. Thus a diode may be produced by depositing P type germanium on N type gallium arsenide.
Abstract:
891,572. Coating with metals. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 12, 1960 [May 28, 1959], No. 16840/60. Class 82(2). [Also in Group XXXVI] A P type monocrystalline germanium wafer shaped as described in Group XXXVI is placed in a sealed chamber 17 with finely divided 0À01 ohm. cm. phosphorus doped N type germanium 18 and germanium iodide as a carrier gas. The finely divided germanium source 18 is maintained at 550‹C., the wafer at 400‹C, and the rest of the chamber at 410‹C. for 48 hours during which the germanium is transported from source 18 and deposited epitaxially at 7 on the wafer.