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    THROUGH-VIAS FOR WIRING LAYERS OF SEMICONDUCTOR DEVICES
    24.
    发明申请
    THROUGH-VIAS FOR WIRING LAYERS OF SEMICONDUCTOR DEVICES 有权
    用于半导体器件接线层的通孔

    公开(公告)号：US20140312502A1

    公开(公告)日：2014-10-23

    申请号：US13865740

    申请日：2013-04-18

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Christopher V. Jahnes ,  Xiao Hu Liu ,  Bucknell C. Webb

    IPC: H01L23/48 ,  H01L21/768

    CPC classification number: H01L23/481 ,  H01L21/76877 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Through-via structures and methods of their formation are disclosed. In one such method, a first etch through at least a first dielectric material of a wiring layer is performed such that a first hole outlining a collar structure for the through-via is formed. In addition, a stress-abating dielectric material is deposited in the hole such that the stress-abating dielectric material is disposed at least laterally from the first dielectric material. Further, a second etching through at least a semiconductor material of a semiconductor layer that is disposed below the wiring layer is performed, where the second etching forms a via hole in the semiconductor material. Additionally, at least a portion of the via hole is filled with conductive material to form the through-via such that the stress-abating dielectric material, at least in the wiring layer, provides a buffer between the conductive material and the first dielectric material.

    Abstract translation: 公开了通孔结构及其形成方法。 在一种这样的方法中，进行通过布线层的至少第一电介质材料的第一蚀刻，使得形成用于通孔的轴环结构的第一孔。 此外，在孔中沉积减轻应力的电介质材料，使得减轻应力的电介质材料至少在第一介电材料的侧面。 此外，进行通过设置在布线层下方的至少半导体材料的第二蚀刻，其中第二蚀刻在半导体材料中形成通孔。 此外，通孔的至少一部分填充有导电材料以形成通孔，使得至少在布线层中的减轻应力的电介质材料在导电材料和第一介电材料之间提供缓冲。

    THROUGH-VIAS FOR WIRING LAYERS OF SEMICONDUCTOR DEVICES
    25.
    发明申请
    THROUGH-VIAS FOR WIRING LAYERS OF SEMICONDUCTOR DEVICES 有权
    用于半导体器件接线层的通孔

    公开(公告)号：US20140312467A1

    公开(公告)日：2014-10-23

    申请号：US13971100

    申请日：2013-08-20

    Applicant: International Business Machines Corporation

    Inventor： Christopher V. Jahnes ,  Xiao Hu Liu ,  Bucknell C. Webb

    IPC: H01L23/522

    CPC classification number: H01L23/481 ,  H01L21/76877 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Through-via structures and methods of their formation are disclosed. One such structure includes a conductor structure, a dielectric via lining and a stress-abating dielectric material. The conductor structure is formed of conducting material extending through a wiring layer of a semiconductor device and through a semiconductor layer below the wiring layer. Here, the wiring layer of the semiconductor device includes a first dielectric material. The dielectric via lining extends along the conductor structure at least in the semiconductor layer. Further, the stress-abating dielectric material is disposed between the conductor structure and the first dielectric material in at least the wiring layer, where the stress-abating dielectric material is disposed over portions of the semiconductor layer that are outside outer boundaries of the via lining.

    Abstract translation: 公开了通孔结构及其形成方法。 一种这样的结构包括导体结构，电介质通孔衬垫和减轻应力的电介质材料。 导体结构由延伸穿过半导体器件的布线层并穿过布线层下方的半导体层的导电材料形成。 这里，半导体器件的布线层包括第一电介质材料。 电介质通孔衬里至少在半导体层中沿着导体结构延伸。 此外，在至少布线层中的应力消除电介质材料设置在导体结构和第一电介质材料之间，其中耐应力电介质材料设置在半导体层的位于通孔衬里的外边界之外的部分上 。

    MAGNETIC WRITER HAVING MULTIPLE GAPS WITH MORE UNIFORM MAGNETIC FIELDS ACROSS THE GAPS
    28.
    发明申请
    MAGNETIC WRITER HAVING MULTIPLE GAPS WITH MORE UNIFORM MAGNETIC FIELDS ACROSS THE GAPS 有权
    具有更多均匀磁场的多个GAPS的磁性写作

    公开(公告)号：US20140126078A1

    公开(公告)日：2014-05-08

    申请号：US14151494

    申请日：2014-01-09

    Applicant: International Business Machines Corporation

    Inventor： Robert G. Biskeborn ,  Philipp Herget ,  Bucknell C. Webb

    IPC: G11B5/265

    CPC classification number: G11B5/3116 ,  G11B5/17 ,  G11B5/23 ,  G11B5/265 ,  G11B5/2652 ,  G11B5/59638

    Abstract: A magnetic device according to one embodiment includes a source of flux; a magnetic pole having two or more gaps; and a low reluctance path positioned towards at least one of the gaps and riot positioned towards at least one other of the gaps for affecting a magnetic field formed at the at least one of the gaps when the source of flux is generating flux. Other disclosed embodiments include devices having coil turns with a non-uniform placement in the magnetic yoke for altering a magnetic field formed at the at least one of the gaps during writing. In further embodiments, a geometry of the magnetic pole near or at one of the gaps is different than a geometry of the magnetic pole near or at another of the gaps to help equalize fields formed at the gaps when the source of flux is generating flux.

    Abstract translation: 根据一个实施例的磁性装置包括通量源; 具有两个或更多间隙的磁极; 以及朝向所述间隙中的至少一个定位的低磁阻路径，并且朝向所述间隙中的至少另一个定位的暴动，用于当所述通量源产生通量时，影响在所述至少一个所述间隙处形成的磁场。 其他公开的实施例包括具有在磁轭中具有不均匀布置的线圈匝的装置，用于在写入期间改变在至少一个间隙处形成的磁场。 在另外的实施例中，靠近或在其中一个间隙处的磁极的几何形状不同于磁极在靠近或另一个间隙处的几何形状，以帮助当磁通源产生磁通时在间隙处形成的场均衡。

    MAGNETIC WRITER HAVING MULTIPLE GAPS WITH MORE UNIFORM MAGNETIC FIELDS ACROSS THE GAPS
    29.
    发明申请
    MAGNETIC WRITER HAVING MULTIPLE GAPS WITH MORE UNIFORM MAGNETIC FIELDS ACROSS THE GAPS 有权
    具有更多均匀磁场的多个GAPS的磁性写作

    公开(公告)号：US20130120872A1

    公开(公告)日：2013-05-16

    申请号：US13734838

    申请日：2013-01-04

    Applicant: International Business Machines Corporation

    Inventor： Robert G. Biskeborn ,  Philipp Herget ,  Bucknell C. Webb

    IPC: G11B5/265

    CPC classification number: G11B5/3116 ,  G11B5/17 ,  G11B5/23 ,  G11B5/265 ,  G11B5/2652 ,  G11B5/59638

    Abstract: A magnetic device according to one embodiment includes a source of flux; a magnetic pole coupled to the source of flux, the magnetic pole having two or more gaps; and a low reluctance path positioned towards at least one of the gaps and not positioned towards at least one other of the gaps for affecting a magnetic field formed at the at least one of the gaps when the source of flux is generating flux. Other disclosed embodiments include devices having coil turns with a non-uniform placement in the magnetic yoke for altering a magnetic field formed at the at least one of the gaps during writing. In further embodiments, a geometry of the magnetic pole near or at one of the gaps is different than a geometry of the magnetic pole near or at another of the gaps to help equalize fields formed at the gaps when the source of flux is generating flux.

    Abstract translation: 根据一个实施例的磁性装置包括通量源; 耦合到磁通源的磁极，所述磁极具有两个或更多个间隙; 以及朝向所述间隙中的至少一个定位的低磁阻路径，并且朝向所述间隙中的至少另一个定位，以在所述通量源产生磁通时影响形成在所述至少一个间隙处的磁场。 其他公开的实施例包括具有在磁轭中具有不均匀布置的线圈匝的装置，用于在写入期间改变在至少一个间隙处形成的磁场。 在另外的实施例中，靠近或在其中一个间隙处的磁极的几何形状不同于磁极在靠近或另一个间隙处的几何形状，以帮助当磁通源产生磁通时在间隙处形成的场均衡。

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