-
公开(公告)号：US20140014162A1
公开(公告)日：2014-01-16
申请号：US14027657
申请日：2013-09-16
IPC分类号： H01L31/058
CPC分类号： H01L31/056 , F24S80/50 , F28F1/32 , H01L31/03767 , H02S40/44 , Y02E10/50 , Y02E10/60
摘要： The electrical output efficiency of a photovoltaic thermal system can be restored from degradation due to light exposure by annealing a photovoltaic thermal cell at an elevated temperature. The elevated temperature at the photovoltaic thermal cell can be provided by redirecting the flow of a heat exchange fluid to bypass a heat exchanger unit. A boiler unit may be employed to provide additional heating of the heat exchange fluid during the anneal. Further, a variable configuration lid can be provided over a front surface of the photovoltaic thermal cell to control ventilation over the front surface. During the anneal, the position of the variable configuration lid can be set so as to trap heat above the front surface and to elevate the anneal temperature further.
摘要翻译： 光伏热系统的电输出效率可以通过在升高的温度下对光伏热电池进行退火而由于曝光导致的退化而恢复。 可以通过将热交换流体的流动重新定向以绕过热交换器单元来提供光伏热电池的高温。 可以使用锅炉单元来在退火期间提供热交换流体的附加加热。 此外，可以在光伏热电池的前表面上设置可变配置盖，以控制前表面上的通风。 在退火过程中，可以设置可变配置盖的位置，以便在前表面捕获热量并进一步提高退火温度。
-
公开(公告)号：US10741706B2
公开(公告)日：2020-08-11
申请号：US15847117
申请日：2017-12-19
IPC分类号： H01L31/105 , H01L31/0236 , H01L31/0224 , H01L31/18 , H01L31/0352
摘要： A photovoltaic device includes a substrate layer having a plurality of three-dimensional structures formed therein providing a textured profile. A first electrode is formed over the substrate layer and extends over the three-dimensional structures including non-planar surfaces. The first electrode has a thickness configured to maintain the textured profile, and the first electrode includes a transparent conductive material having a dopant metal activated within the transparent conductive material. A continuous photovoltaic stack is conformally formed over the first electrode, and a second electrode is formed on the photovoltaic stack.
-
公开(公告)号：US10727367B2
公开(公告)日：2020-07-28
申请号：US16502919
申请日：2019-07-03
IPC分类号： H01L31/077 , H01L31/0216 , H01L31/0368 , H01L31/0376 , H01L31/0392 , C23C16/50 , H01L31/20 , H01L21/02 , C23C16/02 , C23C16/455 , C23C16/515 , H01L31/0224 , H01L31/065 , H01L31/18 , H01L31/056
摘要： A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.
-
公开(公告)号：US09911888B2
公开(公告)日：2018-03-06
申请号：US14976798
申请日：2015-12-21
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , H01L31/077 , C23C16/50 , H01L31/20 , H01L21/02 , C23C16/02 , H01L31/0216 , H01L31/0368 , H01L31/0376 , H01L31/0392 , C23C16/455 , C23C16/515 , H01L31/0224 , H01L31/065 , H01L31/18 , H01L31/056
CPC分类号： H01L31/077 , C23C16/0272 , C23C16/45523 , C23C16/45557 , C23C16/50 , C23C16/515 , H01L21/02532 , H01L21/0262 , H01L31/02167 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/03682 , H01L31/03687 , H01L31/03762 , H01L31/03921 , H01L31/056 , H01L31/065 , H01L31/1816 , H01L31/20 , Y02E10/52 , Y02E10/546 , Y02E10/548
摘要： A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.
-
公开(公告)号：US09515215B2
公开(公告)日：2016-12-06
申请号：US14027657
申请日：2013-09-16
IPC分类号： H01L31/058 , H01L31/0525 , H01L31/0376 , H02S40/44 , F24J2/50 , F28F1/32
CPC分类号： H01L31/056 , F24S80/50 , F28F1/32 , H01L31/03767 , H02S40/44 , Y02E10/50 , Y02E10/60
摘要： The electrical output efficiency of a photovoltaic thermal system can be restored from degradation due to light exposure by annealing a photovoltaic thermal cell at an elevated temperature. The elevated temperature at the photovoltaic thermal cell can be provided by redirecting the flow of a heat exchange fluid to bypass a heat exchanger unit. A boiler unit may be employed to provide additional heating of the heat exchange fluid during the anneal. Further, a variable configuration lid can be provided over a front surface of the photovoltaic thermal cell to control ventilation over the front surface. During the anneal, the position of the variable configuration lid can be set so as to trap heat above the front surface and to elevate the anneal temperature further.
摘要翻译： 光伏热系统的电输出效率可以通过在升高的温度下对光伏热电池进行退火而由于曝光导致的退化而恢复。 可以通过将热交换流体的流动重新定向以绕过热交换器单元来提供光伏热电池的高温。 可以使用锅炉单元来在退火期间提供热交换流体的附加加热。 此外，可以在光伏热电池的前表面上设置可变配置盖，以控制前表面上的通风。 在退火过程中，可以设置可变配置盖的位置，以便在前表面捕获热量并进一步提高退火温度。
-
公开(公告)号：US09105805B2
公开(公告)日：2015-08-11
申请号：US14146138
申请日：2014-01-02
IPC分类号： H01L31/18 , H01L31/20 , H01L31/0216 , H01L31/075 , C23C16/22
CPC分类号： H01L31/1884 , C23C16/22 , H01L31/02167 , H01L31/075 , H01L31/204 , Y02E10/548
摘要： Methods for forming a photovoltaic device include adjusting a deposition power for depositing a buffer layer including germanium on a transparent electrode. The deposition power is configured to improve device efficiency. A p-type layer is formed on the buffer layer. An intrinsic layer and an n-type layer are formed over the p-type layer.
摘要翻译： 用于形成光伏器件的方法包括调整用于在透明电极上沉积包括锗的缓冲层的沉积功率。 沉积功率被配置为提高器件效率。 在缓冲层上形成p型层。 在p型层上形成本征层和n型层。
-
公开(公告)号：US20150108616A1
公开(公告)日：2015-04-23
申请号：US14059797
申请日：2013-10-22
IPC分类号： H01L21/02 , H01L29/786 , H01L29/78 , H01L29/06 , H01L29/04
CPC分类号： H01L27/1211 , H01L21/02433 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/182 , H01L21/845 , H01L29/04 , H01L29/1608 , H01L29/165 , H01L29/785 , H01L29/78603
摘要： A dielectric material layer is formed on a semiconductor-on-insulator (SOI) substrate including a top semiconductor layer containing a first semiconductor material. An opening is formed within the dielectric material layer, and a trench is formed in the top semiconductor layer within the area of the opening by an etch. A second semiconductor material is deposited to a height above the top surface of the top semiconductor layer employing a selective epitaxy process. Another dielectric material layer can be deposited, and another trench can be formed in the top semiconductor layer. Another semiconductor material can be deposited to a different height employing another selective epitaxy process. The various semiconductor material portions can be patterned to form semiconductor fins having different heights and/or different compositions.
-
公开(公告)号：US20140120655A1
公开(公告)日：2014-05-01
申请号：US14146138
申请日：2014-01-02
CPC分类号： H01L31/1884 , C23C16/22 , H01L31/02167 , H01L31/075 , H01L31/204 , Y02E10/548
摘要： Methods for forming a photovoltaic device include adjusting a deposition power for depositing a buffer layer including germanium on a transparent electrode. The deposition power is configured to improve device efficiency. A p-type layer is formed on the buffer layer. An intrinsic layer and an n-type layer are formed over the p-type layer.
摘要翻译： 用于形成光伏器件的方法包括调整用于在透明电极上沉积包括锗的缓冲层的沉积功率。 沉积功率被配置为提高器件效率。 在缓冲层上形成p型层。 在p型层上形成本征层和n型层。
-
公开(公告)号：US11011655B2
公开(公告)日：2021-05-18
申请号：US16376791
申请日：2019-04-05
IPC分类号： H01L31/0236 , H01L31/18 , H01L31/077 , H01L31/0376 , H01L31/0352 , H01L31/0224 , H01L31/075
摘要： A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.
-
30.发明授权公开(公告)号：US10593815B2
公开(公告)日：2020-03-17
申请号：US15894690
申请日：2018-02-12
发明人： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/075 , H01L31/18
摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
-
-
-
-
-
-
-
-
-
搜索结果
37 条记录 (耗时 0.021 秒)
